CDIL BCW60B Silicon planar epitaxial transistor Datasheet

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW60A BCW60B
BCW60C BCW60D
SILICON PLANAR EPITAXIAL TRANSISTORS
N–P–N silicon transistors
Marking
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f = 100 MHz
VCE = 5 V; IC = 10 mA
Noise figure at f = 1 kHz
VCE = 5V; IC = 200 mA; B = 200Hz
Continental Device India Limited
Data Sheet
VCES
VCE0
IC
Ptot
Tj
max.
max.
max.
max.
max.
32
32
200
250
150
V
V
mA
mW
°C
fT
typ.
250 MHz
F
typ.
2 dB
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BCW60A BCW60B
BCW60C BCW60D
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Base current
Total power dissipation up to Tamb: 25 °C
Storage temperature
Junction temperature
VCES
VCE0
VEB0
IC
IB
Ptot
Tstg
Tj
THERMAL RESISTANCE
From junction to ambient*
Rth j–a =
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter cut–off current
VBE = 0; VCE = 32 V
VBE = 0; VCE = 32V; Tamb = 150°C
Emitter–base cut–off current
IC = 0; VEB = 4 V
Saturation voltages
at IC = 10 mA; IB = 0,25 mA
Transition frequency at f = 100 MHz ·
IC = 10 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10V
Emitter capacitance at f = 1 MHz
IC = Ic = 0; VEB = 0,5 V
Noise figure at RS = 2 kW
IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz
ICES
ICES
<
<
20 nA
20 mA
IEB0
<
20 nA
VCEsat
VBEsat
0,1 to 0,55 V
0,7 to 1,05 V
fT
>
typ.
125 MHz
250 MHz
Cc
typ.
2,5 pF
Ce
typ.
typ.
<
F
BCW60A 60B
VCE = 5 V; IC: 2 mA
VCE = 1 V; IC: 50 mA
Input impedance
VCE = 5 V; IC = 2 mA, f = 1 kHz
Continental Device India Limited
500 K/W
VCEsat 0,05 to 0,35 V
VBEsat 0,6 to 0,85 V
at IC = 50 mA; IB = 1,25 mA
D.C. current gain
VCE = 5 V; IC = 10 mA
max.
32 V
max.
32 V
max.
5 V
max. 200 mA
max.
50 mA
max. 250 mW
–55 to +150° C
max. 150 ° C
8 pF
2 dB
6 dB
60C
60D
hFE
>
–
20
40
100
hFE
>
<
120
220
180
310
250
460
380
630
hFE
>
50
70
90
100
hie
typ.
2,7
3,6
4,5
7,5 kW
Data Sheet
Page 2 of 3
BCW60A BCW60B
BCW60C BCW60D
Reverse voltage transfer ratio
VCE = 5 V; IC = 2 mA; f: 1 kHz
Small–signal current gain
VCE = 5 V; IC = 2 mA; f = 1 kHz
B
C
D
10-4
hre
typ.
1,5
2
2
3
hfe
min.
125
175
250
350
max.
250
350
500
700
typ.
18
24
30
50 ms
Output admittance
VCE = 5 V; IC = 2 mA; f = 1 kHz
hoe
Base–emitter voltage
VCE = 5 V; IC: 2 mA
VBE
VCE = 5 V; IC = 10 mA
VCE = 1 V; IC = 50 mA
A
VBE
VBE
typ.
typ.
typ.
0,55 to 0,75
0,65
0,52
0,78
V
V
V
V
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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risk and CDIL will not be responsible for any damages resulting from such sale(s).
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
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