DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES • Low feedback capacitance. handbook, halfpage APPLICATIONS • For use in video output stages of black and white and colour television receivers. 2 3 DESCRIPTION NPN transistors in a TO-202; SOT128B plastic package. PNP complement: BF588. 1 PINNING 1 2 3 MBH793 PIN DESCRIPTION 1 emitter 2 collector 3 base Fig.1 Simplified outline (TO-202; SOT128B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS BF587 collector-emitter voltage MAX. UNIT open emitter BF585 VCEO MIN. − 350 V − 400 V − 300 V − 350 V − 5 V open base BF585 BF587 VEBO emitter-base voltage IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation in free air; Tamb ≤ 25 °C − 1.6 W in free air; Tmb ≤ 25 °C − 5 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 21 open collector 2 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-a thermal resistance from junction to ambient 78 K/W Rth j-mb thermal resistance from junction to mounting base 25 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 300 V − 20 nA IE = 0; VCB = 250 V; Tj = 150 °C − 20 µA nA IEBO emitter cut-off current IC = 0; VEB = 5 V − 100 hFE DC current gain IC = 25 mA; VCE = 20 V 50 − IC = 40 mA; VCE = 20 V 20 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5 mA − 600 mV Cc collector capacitance IE = ie = 0; VCB = 30 V; f = 1 MHz − 2.5 pF Cre feedback capacitance IC = ic = 0; VCE = 30 V; f = 1 MHz − 1.8 pF fT transition frequency IC = 10 mA; VCE = 10 V 70 110 MHz 1999 Apr 21 3 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) SOT128B E1 c1 P P1 HE D L1 L2 L 1 2 3 bp c w M Q e1 A e E 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c c1 D E E1 e e1 HE L L1 L2(1) max P P1 Q w mm 4.6 4.4 0.8 0.6 0.65 0.5 0.56 0.46 8.6 8.4 10.1 9.9 10.4 10.0 5.08 2.54 24.2 23.8 13.3 12.2 2.4 2.0 2.5 3.8 3.6 3.9 3.7 1.7 1.5 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B 1999 Apr 21 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 TO-202 4 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 21 5 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 NOTES 1999 Apr 21 6 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 NOTES 1999 Apr 21 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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