Filtronic EB-FPM2750QFN-SE Low noise high linearity balanced amplifier module Datasheet

FPM2750QFN
Datasheet v2.5
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
PACKAGE:
FEATURES:
•
•
•
•
•
•
•
Balanced low noise amplifier module
Excellent Noise figure: 0.4dB at 1850MHz
Low drive current: 40mA typical (3.0V)
Combined IP3: 36dBm (100mA)
Combined P1dB: 23dBm (100mA)
Small footprint: 4mm x 4mm x 0.9mm QFN
RoHS compliant: (Directive 2002/95/EC)
GENERAL DESCRIPTION:
TYPICAL APPLICATIONS:
The FPM2750QFN is a packaged pair of
pseudomorphic
High
Electron
Mobility
Transistors (pHEMT) specifically optimised for
balanced configuration systems. The Filtronic
0.25µm process ensures class-leading noise
performance.
The use of a small footprint
plastic package allows for a cost effective total
system implementation.
•
•
Wireless infrastructure: Tower mounted
Amplifiers and front end LNAs for
EGSM/PCS/WCDMA/UMTS base stations
High intercept-point LNAs
ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated):
PARAMETER
SYMBOL
Noise Figure
NF
Output IP3
IP3
in balanced mode
SSG in balanced mode
CONDITIONS
VDS = 3.0 V; IDS = 40mA
0.4
0.6
VDS = 3.0 V; IDS = 40mA
32
P1dB
Power at 1dB Gain Compression
SSG
P1dB
MAX
dBm
36
dB
20
21
21.5
dBm
23.5
VDS = 3.0 V; IDS = 40mA
19.0
VDS = 4.0 V; IDS = 100mA
19.5
VDS = 3.0 V; IDS = 40mA
17.5
VDS = 4.0 V; IDS = 100mA
17.5
185
UNITS
dB
18.5
17.5
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
Small Signal Gain
33
VDS = 3.0 V; IDS = 40mA
VDS = 4.0 V; IDS = 100mA
P1dB in balanced mode
TYP
VDS = 4.0 V; IDS = 100mA
VDS = 4.0 V; IDS = 100mA
SSG
MIN
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
375
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
200
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
5
μA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.75 mA
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.75 mA
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.75 mA
16
V
Thermal Resistance
ΘJC
1W dissipation, case temperature 22°C
124
°C/W
0.7
230
dB
1.0
280
1.3
mA
V
Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted).
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
1
ABSOLUTE MAXIMUM RATING (PER TRANSISTOR) :
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
6V
Gate-Source Voltage
VGS
-3V
Drain-Source Current
IDS
For VDS < 2V
IDSS
Gate Current
IG
Forward or reverse current
7.5mA
RF Input Power (Note 2)
PIN
Under any acceptable bias state
150mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-55°C to 150°C
Total Power Dissipation (Note 3)
PTOT
See De-Rating Note below
1W
Gain Compression
Comp.
Under any bias conditions
5dB
Notes:
1.
2.
3.
4.
5.
TEST CONDITIONS
ABSOLUTE MAXIMUM
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may
cause permanent damage to the device
RF Input must be further limited if input VSWR > 2.5:1
Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT
where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
PTOT = (150 – TCASE ) / ΘJC W
where TCASE = Temperature of the thermal pad on the underside of the package
ΘJC increases linearly from 124°C/W at a TCASE of 22°C to 145°C/W at a TCASE of 145°C
Information on the mounting of QFN style packages for optimum thermal performance is available on
request.
BIASING GUIDELINES:
•
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for
additional information.
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices used in the FPM2750QFN
Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source
bias voltage, and such circuits provide some temperature stabilization for the device. A nominal
value for circuit development is 4 Ω for a 50% of IDSS operating point.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B
bias of 25-33% offers an optimised solution for NF and OIP3.
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
REFERENCE DESIGN 1850MHZ (BALANCED OPERATION):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
DESIGNATOR
SUPPLIER
PART NUMBER
DESCRIPTION
QUANTITY
C1, C2, C3, C4
RS Components
464-6587
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR
4
C5, C6, C7, C8, C9, C17
RS Components
464-6385
CAP-10pF-0603-5%-50V-COG
6
C10, C18, C19, C20
RS Components
264-4602
CAP-22nF-0603-10%-50V
4
RS Components
464-6543
CAP-47nF-0603-+80/-20%-50V-Y5V
6
C25, C26, C27, C29
RS Components
406-0006
CAP-1uF-CASEB-20%-35V-TANT
4
L1, L2, L3, L4
RS Components
484-1372
IND-12nH-2012(0805)-5%-600mA-HQ
4
Q2
FILTRONIC
FPM2750QFN
Dual FPD750-QFN4x4
1
R1, R2
RS Components
213-2042
RESIST-22ohm-1608(0603)-1%-0.1W
2
R3, R4, R5, R6
RS Components
213-2143
RESIST-100ohm-1608(0603)-1%-0.1W
4
W1, W2
ANAREN
1P503
HYBRID COUPLER
2
RF1, RF2
RS Components
363-4707
SMA Side Mount RF Connector
2
(V1, V2)
RS Components
453-173
DC Connector (4 way)
2
Evaluation board
FILTRONIC
EBD15PA
C11, C12, C13, C14, C15,
C16
31mil thick FR4
1/2 Ounce Cu on both sides
1
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
REFERENCE DESIGN 1850MHZ (SINGLE ENDED OPERATION):
Note: Package Schematic
Note: Evaluation board drawing available upon request.
BILL OF MATERIALS:
DESIGNATOR
SUPPLIER
PART NUMBER
DESCRIPTION
QUANTITY
C1, C2, C3, C4
RS Components
464-6587
CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR
4
C5, C6, C7, C8, C9, C17
RS Components
464-6385
CAP-10pF-0603-5%-50V-COG
6
C10, C18, C19, C20
RS Components
264-4602
CAP-22nF-0603-10%-50V
4
RS Components
464-6543
CAP-47nF-0603-+80/-20%-50V-Y5V
6
C25, C26, C27, C29
RS Components
406-0006
CAP-1uF-CASEB-20%-35V-TANT
4
L1, L2, L3, L4
RS Components
484-1372
IND-12nH-2012(0805)-5%-600mA-HQ
4
Q2
FILTRONIC
FPM2750QFN
Dual FPD750-QFN4x4
1
R1, R2
RS Components
213-2042
RESIST-22ohm-1608(0603)-1%-0.1W
2
RF1, RF2, RF3, RF4
RS Components
363-4707
SMA Side Mount RF Connector
4
(V1, V2)
RS Components
453-173
DC Connector (4 way)
2
Evaluation board
FILTRONIC
EBD12PA
C11, C12, C13, C14, C15,
C16
31mil thick FR4
1/2 Ounce Cu on both sides
1
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: BALANCED OPERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated
otherwise. All measurements shown are referenced to evaluation board connectors.
0.9
0
0.8
Input Return Loss (dB)
0.7
NF (dB)
0.6
0.5
0.4
0.3
0.2
-10
-20
-30
-40
0.1
0.0
-50
1.70
1.75
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
1.0
5.0
20
-10
19
-20
-30
-40
18
17
16
'-40 °C'
'20 °C'
'80 °C'
15
-50
14
-60
13
1.0
2.0
3.0
Freq (GHz)
4.0
5.0
1.80
24
1.85
1.90
Freq (GHz)
1.95
2.00
38
23
36
22
Output IP3 (dBm)
Output P1dB (dBm)
4.0
21
Gain (dB)
Output Return Loss (dB)
0
2.0
3.0
Freq (GHz)
21
20
19
'-40 °C'
'20 °C'
'80 °C'
18
17
34
32
30
'-40 °C'
'20 °C'
'80 °C'
28
16
26
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: SINGLE ENDED OPERATION
Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated
otherwise. All measurements shown are referenced to evaluation board connectors.
0.9
0
0.8
-2
Input Return Loss (dB)
0.7
NF (dB)
0.6
0.5
0.4
0.3
0.2
-4
-6
-8
-10
-12
0.1
-14
0.0
-16
1.70
1.75
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
0
1.0
2.0
3.0
Freq (GHz)
4.0
5.0
1.0
2.0
3.0
Freq (GHz)
4.0
5.0
30
20
-20
Gain (dB)
Output Return Loss (dB)
25
-10
-30
15
10
5
0
-40
-5
-50
-10
2.0
3.0
Freq (GHz)
4.0
5.0
21
32
20
31
19
30
Output IP3 (dBm)
Output P1dB (dBm)
1.0
18
17
16
15
29
28
27
14
26
13
25
12
24
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
1.80
1.85
1.90
Freq (GHz)
1.95
2.00
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
TYPICAL SMALL SIGNAL MAGNITUDE DIFFERENCE WITHIN A SINGLE PACKAGE:
400
500
400
Count
Count
300
200
300
200
100
100
0
0
0.0
0.1
0.2
0.3
0.4
|S11_ChA(mag) - S11_ChB(mag)|
0.5
0.0
0.1
0.2
0.3
0.4
|S22_ChA(mag) - S22_ChB(mag)|
0.5
400
300
Count
Count
300
200
200
100
100
0
0
-4
-2
0
2
S21_ChA(dB) - S21_ChB(dB)
4
-4
-2
0
2
S12_ChA(dB) - S12_ChB(dB)
4
The histograms above represent the distribution of the asymmetry of RF parameters for the devices
within a package. ChA and ChB are the two devices within the same package. The sample size for the
histograms above is 1000 parts.
PARAMETER
MEDIAN
STANDARD DEVIATION
TEST LIMIT
CPK
|S11ChA(mag) - S11ChB(mag)|
0.0001
0.027
0.1
1.3
|S22ChA(mag) – S22ChB(mag)|
0.0001
0.019
0.1
1.7
S21ChA(dB) – S21ChB(dB)
0.006
0.408
±0.75
0.68
S12ChA(dB) – S12ChB(dB)
-0.128
0.205
±0.75
1.43
7
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPM2750QFN
Datasheet v2.5
PACKAGE OUTLINE:
(dimensions in millimeters – mm, centre paddle and pin 1 identifier are grounded)
TERMINAL
FUNCTION
1-4, 6, 15
Source 1
5
RFin 1
7, 9-12, 14
Source 2
8
RFin 2
13
RFout 2
16
RFout 1
PREFERRED ASSEMBLY INSTRUCTIONS:
APPLICATION NOTES & DESIGN DATA:
Please
contact
Filtronic
Compound
Semiconductors Ltd for further details.
Application Notes and design data including Sparameters are available; please contact
Filtronic Compound Semiconductors Ltd.
HANDLING PRECAUTIONS:
DISCLAIMERS:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages of
storage, handling, assembly, and testing.
These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
DESCRIPTION
FPM2750QFN
Packaged pHEMT
EB-FPM2750QFN-BAL
Balanced Packaged pHEMT
evaluation board
EB-FPM2750QFN-SE
Single-ended Packaged pHEMT
evaluation board
8
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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