FPM2750QFN Datasheet v2.5 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical (3.0V) Combined IP3: 36dBm (100mA) Combined P1dB: 23dBm (100mA) Small footprint: 4mm x 4mm x 0.9mm QFN RoHS compliant: (Directive 2002/95/EC) GENERAL DESCRIPTION: TYPICAL APPLICATIONS: The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25µm process ensures class-leading noise performance. The use of a small footprint plastic package allows for a cost effective total system implementation. • • Wireless infrastructure: Tower mounted Amplifiers and front end LNAs for EGSM/PCS/WCDMA/UMTS base stations High intercept-point LNAs ELECTRICAL SPECIFICATIONS (as measured on each device unless otherwise stated): PARAMETER SYMBOL Noise Figure NF Output IP3 IP3 in balanced mode SSG in balanced mode CONDITIONS VDS = 3.0 V; IDS = 40mA 0.4 0.6 VDS = 3.0 V; IDS = 40mA 32 P1dB Power at 1dB Gain Compression SSG P1dB MAX dBm 36 dB 20 21 21.5 dBm 23.5 VDS = 3.0 V; IDS = 40mA 19.0 VDS = 4.0 V; IDS = 100mA 19.5 VDS = 3.0 V; IDS = 40mA 17.5 VDS = 4.0 V; IDS = 100mA 17.5 185 UNITS dB 18.5 17.5 VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA Small Signal Gain 33 VDS = 3.0 V; IDS = 40mA VDS = 4.0 V; IDS = 100mA P1dB in balanced mode TYP VDS = 4.0 V; IDS = 100mA VDS = 4.0 V; IDS = 100mA SSG MIN dBm Saturated Drain-Source Current IDSS VDS = 1.3 V; VGS = 0 V Maximum Drain-Source Current IMAX VDS = 1.3 V; VGS ≅ +1 V 375 mA Transconductance GM VDS = 1.3 V; VGS = 0 V 200 mS Gate-Source Leakage Current IGSO VGS = -5 V 5 μA Pinch-Off Voltage |VP| VDS = 1.3 V; IDS = 0.75 mA Gate-Source Breakdown Voltage |VBDGS| IGS = 0.75 mA 16 V Gate-Drain Breakdown Voltage |VBDGD| IGD = 0.75 mA 16 V Thermal Resistance ΘJC 1W dissipation, case temperature 22°C 124 °C/W 0.7 230 dB 1.0 280 1.3 mA V Note: TAMBIENT = 22°; RF specification measured at f= 1850MHz using CW signal (except as noted). 1 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 1 ABSOLUTE MAXIMUM RATING (PER TRANSISTOR) : PARAMETER SYMBOL Drain-Source Voltage VDS 6V Gate-Source Voltage VGS -3V Drain-Source Current IDS For VDS < 2V IDSS Gate Current IG Forward or reverse current 7.5mA RF Input Power (Note 2) PIN Under any acceptable bias state 150mW Channel Operating Temperature TCH Under any acceptable bias state 175°C Storage Temperature TSTG Non-Operating Storage -55°C to 150°C Total Power Dissipation (Note 3) PTOT See De-Rating Note below 1W Gain Compression Comp. Under any bias conditions 5dB Notes: 1. 2. 3. 4. 5. TEST CONDITIONS ABSOLUTE MAXIMUM TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device RF Input must be further limited if input VSWR > 2.5:1 Total Power Dissipation is defined as: PTOT = PDC + PIN – POUT where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power Total Power Dissipation shall be de-rated above 22°C as follows: PTOT = (150 – TCASE ) / ΘJC W where TCASE = Temperature of the thermal pad on the underside of the package ΘJC increases linearly from 124°C/W at a TCASE of 22°C to 145°C/W at a TCASE of 145°C Information on the mounting of QFN style packages for optimum thermal performance is available on request. BIASING GUIDELINES: • • • • Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices used in the FPM2750QFN Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 4 Ω for a 50% of IDSS operating point. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Class A/B bias of 25-33% offers an optimised solution for NF and OIP3. 2 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 REFERENCE DESIGN 1850MHZ (BALANCED OPERATION): Note: Package Schematic Note: Evaluation board drawing available upon request. BILL OF MATERIALS: DESIGNATOR SUPPLIER PART NUMBER DESCRIPTION QUANTITY C1, C2, C3, C4 RS Components 464-6587 CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR 4 C5, C6, C7, C8, C9, C17 RS Components 464-6385 CAP-10pF-0603-5%-50V-COG 6 C10, C18, C19, C20 RS Components 264-4602 CAP-22nF-0603-10%-50V 4 RS Components 464-6543 CAP-47nF-0603-+80/-20%-50V-Y5V 6 C25, C26, C27, C29 RS Components 406-0006 CAP-1uF-CASEB-20%-35V-TANT 4 L1, L2, L3, L4 RS Components 484-1372 IND-12nH-2012(0805)-5%-600mA-HQ 4 Q2 FILTRONIC FPM2750QFN Dual FPD750-QFN4x4 1 R1, R2 RS Components 213-2042 RESIST-22ohm-1608(0603)-1%-0.1W 2 R3, R4, R5, R6 RS Components 213-2143 RESIST-100ohm-1608(0603)-1%-0.1W 4 W1, W2 ANAREN 1P503 HYBRID COUPLER 2 RF1, RF2 RS Components 363-4707 SMA Side Mount RF Connector 2 (V1, V2) RS Components 453-173 DC Connector (4 way) 2 Evaluation board FILTRONIC EBD15PA C11, C12, C13, C14, C15, C16 31mil thick FR4 1/2 Ounce Cu on both sides 1 3 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 REFERENCE DESIGN 1850MHZ (SINGLE ENDED OPERATION): Note: Package Schematic Note: Evaluation board drawing available upon request. BILL OF MATERIALS: DESIGNATOR SUPPLIER PART NUMBER DESCRIPTION QUANTITY C1, C2, C3, C4 RS Components 464-6587 CAP-20pF-0805-+/-5%-50V(MIN)-LOW_ESR 4 C5, C6, C7, C8, C9, C17 RS Components 464-6385 CAP-10pF-0603-5%-50V-COG 6 C10, C18, C19, C20 RS Components 264-4602 CAP-22nF-0603-10%-50V 4 RS Components 464-6543 CAP-47nF-0603-+80/-20%-50V-Y5V 6 C25, C26, C27, C29 RS Components 406-0006 CAP-1uF-CASEB-20%-35V-TANT 4 L1, L2, L3, L4 RS Components 484-1372 IND-12nH-2012(0805)-5%-600mA-HQ 4 Q2 FILTRONIC FPM2750QFN Dual FPD750-QFN4x4 1 R1, R2 RS Components 213-2042 RESIST-22ohm-1608(0603)-1%-0.1W 2 RF1, RF2, RF3, RF4 RS Components 363-4707 SMA Side Mount RF Connector 4 (V1, V2) RS Components 453-173 DC Connector (4 way) 2 Evaluation board FILTRONIC EBD12PA C11, C12, C13, C14, C15, C16 31mil thick FR4 1/2 Ounce Cu on both sides 1 4 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: BALANCED OPERATION Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated otherwise. All measurements shown are referenced to evaluation board connectors. 0.9 0 0.8 Input Return Loss (dB) 0.7 NF (dB) 0.6 0.5 0.4 0.3 0.2 -10 -20 -30 -40 0.1 0.0 -50 1.70 1.75 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 1.0 5.0 20 -10 19 -20 -30 -40 18 17 16 '-40 °C' '20 °C' '80 °C' 15 -50 14 -60 13 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 1.80 24 1.85 1.90 Freq (GHz) 1.95 2.00 38 23 36 22 Output IP3 (dBm) Output P1dB (dBm) 4.0 21 Gain (dB) Output Return Loss (dB) 0 2.0 3.0 Freq (GHz) 21 20 19 '-40 °C' '20 °C' '80 °C' 18 17 34 32 30 '-40 °C' '20 °C' '80 °C' 28 16 26 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 5 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD: SINGLE ENDED OPERATION Conditions: Vds = 3V, Ids = 40mA (per device), 50Ω environment and TA = +22 °C unless stated otherwise. All measurements shown are referenced to evaluation board connectors. 0.9 0 0.8 -2 Input Return Loss (dB) 0.7 NF (dB) 0.6 0.5 0.4 0.3 0.2 -4 -6 -8 -10 -12 0.1 -14 0.0 -16 1.70 1.75 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 0 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 1.0 2.0 3.0 Freq (GHz) 4.0 5.0 30 20 -20 Gain (dB) Output Return Loss (dB) 25 -10 -30 15 10 5 0 -40 -5 -50 -10 2.0 3.0 Freq (GHz) 4.0 5.0 21 32 20 31 19 30 Output IP3 (dBm) Output P1dB (dBm) 1.0 18 17 16 15 29 28 27 14 26 13 25 12 24 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 1.80 1.85 1.90 Freq (GHz) 1.95 2.00 6 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 TYPICAL SMALL SIGNAL MAGNITUDE DIFFERENCE WITHIN A SINGLE PACKAGE: 400 500 400 Count Count 300 200 300 200 100 100 0 0 0.0 0.1 0.2 0.3 0.4 |S11_ChA(mag) - S11_ChB(mag)| 0.5 0.0 0.1 0.2 0.3 0.4 |S22_ChA(mag) - S22_ChB(mag)| 0.5 400 300 Count Count 300 200 200 100 100 0 0 -4 -2 0 2 S21_ChA(dB) - S21_ChB(dB) 4 -4 -2 0 2 S12_ChA(dB) - S12_ChB(dB) 4 The histograms above represent the distribution of the asymmetry of RF parameters for the devices within a package. ChA and ChB are the two devices within the same package. The sample size for the histograms above is 1000 parts. PARAMETER MEDIAN STANDARD DEVIATION TEST LIMIT CPK |S11ChA(mag) - S11ChB(mag)| 0.0001 0.027 0.1 1.3 |S22ChA(mag) – S22ChB(mag)| 0.0001 0.019 0.1 1.7 S21ChA(dB) – S21ChB(dB) 0.006 0.408 ±0.75 0.68 S12ChA(dB) – S12ChB(dB) -0.128 0.205 ±0.75 1.43 7 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com FPM2750QFN Datasheet v2.5 PACKAGE OUTLINE: (dimensions in millimeters – mm, centre paddle and pin 1 identifier are grounded) TERMINAL FUNCTION 1-4, 6, 15 Source 1 5 RFin 1 7, 9-12, 14 Source 2 8 RFin 2 13 RFout 2 16 RFout 1 PREFERRED ASSEMBLY INSTRUCTIONS: APPLICATION NOTES & DESIGN DATA: Please contact Filtronic Compound Semiconductors Ltd for further details. Application Notes and design data including Sparameters are available; please contact Filtronic Compound Semiconductors Ltd. HANDLING PRECAUTIONS: DISCLAIMERS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. This product is not designed for use in any space based or life sustaining/supporting equipment. ORDERING INFORMATION: PART NUMBER DESCRIPTION FPM2750QFN Packaged pHEMT EB-FPM2750QFN-BAL Balanced Packaged pHEMT evaluation board EB-FPM2750QFN-SE Single-ended Packaged pHEMT evaluation board 8 Tel: +44 (0) 1325 301111 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: [email protected] Website: www.filtronic.com