Microchip MCP1700T-2502ETT Low quiescent current ldo Datasheet

MCP1700
Low Quiescent Current LDO
Features
General Description
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The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
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1.6 µA Typical Quiescent Current
Input Operating Voltage Range: 2.3V to 6.0V
Output Voltage Range: 1.2V to 5.0V
250 mA Output Current for output voltages ≥ 2.5V
200 mA Output Current for output voltages < 2.5V
Low Dropout (LDO) voltage
- 178 mV typical @ 250 mA for VOUT = 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V
Stable with 1.0 µF Ceramic Output capacitor
Short Circuit Protection
Overtemperature Protection
Applications
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Battery-powered Devices
Battery-powered Alarm Circuits
Smoke Detectors
CO2 Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
© 2007 Microchip Technology Inc.
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
(VOUT = 2.8V). The output voltage tolerance of the
MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-23, SOT-89 and
TO-92.
Package Types
3-Pin SOT-23
3-Pin SOT-89
VIN
VIN
MCP1700
3
MCP1700
1
3-Pin TO-92
2
GND VOUT
MCP1700
1
2
1 2 3
3
GND VIN VOUT
GND VIN VOUT
DS21826B-page 1
MCP1700
Functional Block Diagrams
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Over Current
Over Temperature
GND
Typical Application Circuits
MCP1700
GND
VOUT
1.8V
IOUT
150 mA
DS21826B-page 2
VIN
VOUT
VIN
(2.3V to 3.2V)
CIN
1 µF Ceramic
COUT
1 µF Ceramic
© 2007 Microchip Technology Inc.
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
VDD ............................................................................................+6.5V
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current .................................... Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Input Operating Voltage
VIN
Input Quiescent Current
Iq
Maximum Output Current
Output Short Circuit Current
Units
Conditions
2.3
—
6.0
V
Note 1
—
1.6
4
µA
IL = 0 mA, VIN = VR +1V
IOUT_mA
250
200
—
—
—
—
mA
For VR ≥ 2.5V
For VR < 2.5V
IOUT_SC
—
408
—
mA
VIN = VR + V, VOUT = GND,
Current (peak current) measured
10 ms after short is applied.
VOUT
VR-3.0%
VR-2.0%
VR±0.4
%
VR+3.0%
VR+2.0%
V
Note 2
Note 3
Input / Output Characteristics
Output Voltage Regulation
VOUT Temperature Coefficient
TCVOUT
—
50
—
ppm/°C
Line Regulation
ΔVOUT/
(VOUTXΔVIN)
-1.0
±0.75
+1.0
%/V
Load Regulation
ΔVOUT/VOUT
-1.5
±1.0
+1.5
%
Dropout Voltage
VR > 2.5V
VIN-VOUT
—
178
350
mV
IL = 250 mA, (Note 1, Note 5)
Dropout Voltage
VR < 2.5V
VIN-VOUT
—
150
350
mV
IL = 200 mA, (Note 1, Note 5)
Output Rise Time
TR
—
500
—
µs
10% VR to 90% VR VIN = 0V to 6V,
RL = 50Ω resistive
Output Noise
eN
—
3
—
Note 1:
2:
3:
4:
5:
6:
7:
(VR+1)V ≤ VIN ≤ 6V
IL = 0.1 mA to 250 mA for VR ≥ 2.5V
IL = 0.1 mA to 200 mA for VR < 2.5V
Note 4
µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT = 1 µF
The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (VIN = VR + 1.0V); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
© 2007 Microchip Technology Inc.
DS21826B-page 3
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Power Supply Ripple
Rejection Ratio
Thermal Shutdown Protection
Note 1:
2:
3:
4:
5:
6:
7:
Sym
Min
Typ
Max
Units
Conditions
PSRR
—
44
—
dB
f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
TSD
—
140
—
°C
VIN = VR + 1, IL = 100 µA
The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT.
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage (VIN = VR + 1.0V); IOUT = 100 µA.
TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
θJA
—
336
—
°C/W
Minimum Trace Width Single Layer
Board
—
230
—
°C/W
Typical FR4 4-layer Application
—
52
—
°C/W
Typical, 1 square inch of copper
°C/W
EIA/JEDEC JESD51-751-7
4-Layer Board
Thermal Package Resistance
Thermal Resistance, SOT-23
Thermal Resistance, SOT-89
Thermal Resistance, TO-92
Note 1:
θJA
θJA
—
131.9
—
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS21826B-page 4
© 2007 Microchip Technology Inc.
MCP1700
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR + V.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
1.206
VR = 1.2V
IOUT = 0 µA
2.8
2.6
2.4
TJ = - 40°C
2.2
2.0
1.8
TJ = +25°C
1.6
1.4
1.202
1.200
TJ = +25°C
1.198
1.196
1.194
TJ = - 40°C
1.192
1.2
1.0
1.190
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2
2.5
3
Input Voltage (V)
FIGURE 2-1:
Input Voltage.
Input Quiescent Current vs.
4
4.5
5
TJ = +25°C
35
30
6
VR = 1.8V
IOUT = 0.1 mA
TJ = +125°C
40
5.5
FIGURE 2-4:
Output Voltage vs. Input
Voltage (VR = 1.2V).
1.8
VR = 2.8V
45
3.5
Input Voltage (V)
Output Voltage (V)
50
Ground Current (µA)
VR = 1.2V
IOUT = 0.1 mA
TJ = +125°C
1.204
TJ = +125°C
Output Voltage (V)
Quiescent Current (µA)
3.0
TJ = - 40°C
25
20
15
10
1.795
1.79
TJ = - 40°C
TJ = +125°C
1.785
1.78
TJ = +25°C
1.775
5
1.77
0
0
25
50
75
100
125
150
175
200
225
2
250
2.5
3
Load Current (mA)
FIGURE 2-2:
Current.
Ground Current vs. Load
5
5.5
6
2.800
2.798
Output Voltage (V)
Quiscent Current (µA)
VR = 5.0V
2.00
VR = 1.2V
VR = 2.8V
1.50
4.5
FIGURE 2-5:
Output Voltage vs. Input
Voltage (VR = 1.8V).
VIN = VR + 1V
IOUT = 0 µA
1.75
4
Input Voltage (V)
2.50
2.25
3.5
VR = 2.8V
IOUT = 0.1 mA
TJ = +25°C
2.796
2.794
2.792
2.790
TJ = - 40°C
2.788
2.786
2.784
TJ = +125°C
2.782
2.780
2.778
1.25
-40
-25
-10
5
20
35
50
65
80
95
110 125
Junction Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Junction Temperature.
© 2007 Microchip Technology Inc.
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6
Input Voltage (V)
FIGURE 2-6:
Output Voltage vs. Input
Voltage (VR = 2.8V).
DS21826B-page 5
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR +1V.
Output Voltage (V)
2.796
4.990
TJ = - 40°C
4.985
4.980
4.975
4.970
TJ = +125°C
4.965
TJ = +25°C
2.798
TJ = +25°C
VR = 5.0V
IOUT = 0.1 mA
4.995
Output Voltage (V)
5.000
4.960
VR = 2.8V
VIN = VR + 1V
2.794
2.792
2.790
TJ = - 40°C
2.788
2.786
2.784
TJ = +125°C
2.782
2.780
4.955
2.778
5
5.2
5.4
5.6
5.8
6
0
50
100
Input Voltage (V)
FIGURE 2-7:
Output Voltage vs. Input
Voltage (VR = 5.0V).
TJ = - 40°C
1.19
TJ = +25°C
1.18
1.17
250
5.000
VR = 1.2V
VIN = VR + 1V
1.20
200
FIGURE 2-10:
Output Voltage vs. Load
Current (VR = 2.8V).
TJ = +125°C
1.16
TJ = +25°C
4.995
Output Voltage (V)
Output Voltage (V)
1.21
150
Load Current (mA)
4.990
TJ = - 40°C
4.985
4.980
VR = 5.0V
VIN = VR + 1V
4.975
4.970
TJ = +125°C
4.965
4.960
1.15
4.955
0
25
50
75
100
125
150
175
200
0
50
100
Load Curent (mA)
150
200
250
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Load
Current (VR = 1.2V).
FIGURE 2-11:
Output Voltage vs. Load
Current (VR = 5.0V).
1.792
0.25
VR = 2.8V
0.2
TJ = +25°C
1.788
Dropout Votage (V)
Output Voltage (V)
1.790
TJ = - 40°C
1.786
TJ = +125°C
1.784
1.782
1.778
0
25
50
75
100
125
150
175
200
Load Current (mA)
FIGURE 2-9:
Output Voltage vs. Load
Current (VR = 1.8V).
DS21826B-page 6
TJ = +25°C
0.15
0.1
TJ = - 40°C
0.05
VR = 1.8V
VIN = VR + 1V
1.780
TJ = +125°C
0
0
25
50
75
100
125
150
175
200
225
250
Load Current (mA)
FIGURE 2-12:
Dropout Voltage vs. Load
Current (VR = 2.8V).
© 2007 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR +1V.
0.16
10
TJ = +125°C
0.12
0.1
Noise (µV/ √Hz)
Dropout Voltage (V)
VIN = 3.8V
VR = 2.8V
IOUT = 50ma
VR = 5.0V
0.14
TJ = +25°C
0.08
0.06
TJ = - 40°C
0.04
1
VIN = 2.5V
VR = 1.2V
IOUT = 50ma
VIN = 2.8V
VR = 1.8V
IOUT = 50ma
0.1
0.02
0
0
25
50
75
100
125
150
175
200
225
250
0.01
0.01
0.1
1
10
100
FIGURE 2-13:
Dropout Voltage vs. Load
Current (VR = 5.0V).
FIGURE 2-16:
Noise vs. Frequency.
FIGURE 2-14:
Power Supply Ripple
Rejection vs. Frequency (VR = 1.2V).
FIGURE 2-17:
(VR = 1.2V).
Dynamic Load Step
FIGURE 2-15:
Power Supply Ripple
Rejection vs. Frequency (VR = 2.8V).
FIGURE 2-18:
(VR = 1.8V).
Dynamic Load Step
© 2007 Microchip Technology Inc.
1000
Frequency (KHz)
Load Current (mA)
DS21826B-page 7
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR +1V.
FIGURE 2-19:
(VR = 2.8V).
Dynamic Load Step
FIGURE 2-22:
(VR = 5.0V).
Dynamic Load Step
FIGURE 2-20:
(VR = 1.8V).
Dynamic Load Step
FIGURE 2-23:
(VR = 2.8V).
Dynamic Line Step
FIGURE 2-21:
(VR = 2.8V).
Dynamic Load Step
FIGURE 2-24:
(VR = 1.2V).
Startup From VIN
DS21826B-page 8
© 2007 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VR +1V.
Load Regulation (%)
0
VIN = 5.0V
-0.1
VR = 2.8V
IOUT = 0 to 250 mA
VIN = 4.3V
-0.2
-0.3
-0.4
VIN = 3.3V
-0.5
-0.6
-0.7
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
FIGURE 2-25:
(VR = 1.8V).
FIGURE 2-28:
Load Regulation vs.
Junction Temperature (VR = 2.8V).
Start-up From VIN
Load Regulation (%)
0.1
VR = 5.0V
IOUT = 0 to 250 mA
0.05
VIN = 6.0V
0
-0.05
VIN = 5.5V
-0.1
-0.15
-0.2
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
FIGURE 2-26:
(VR = 2.8V).
Start-up From VIN
0.2
VIN = 5.0V
0.1
0.1
VR = 1.8V
IOUT = 0 to 200 mA
Line Regulation (%/V)
Load Regulation (%)
0.3
FIGURE 2-29:
Load Regulation vs.
Junction Temperature (VR = 5.0V).
VIN = 3.5V
0
-0.1
-0.2
-0.3
-0.4
-40
VIN = 2.2V
0.05
0
VR = 2.8V
-0.05
-0.1
VR = 1.8V
-0.15
-0.2
VR = 1.2V
-0.25
-0.3
-25
-10
5
20
35
50
65
80
95
Junction Temperature (°C)
FIGURE 2-27:
Load Regulation vs.
Junction Temperature (VR = 1.8V).
© 2007 Microchip Technology Inc.
110
125
-40 -25 -10
5
20
35
50
65
80
95
110 125
Junction Temperature (°C)
FIGURE 2-30:
Line Regulation vs.
Temperature (VR = 1.2V, 1.8V, 2.8V).
DS21826B-page 9
MCP1700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
SOT-23
Pin No.
SOT-89
Pin No.
TO-92
Name
1
1
1
GND
Ground Terminal
2
3
3
VOUT
Regulated Voltage Output
3
2
2
VIN
3.1
Ground Terminal (GND)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (1.6 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
3.2
Regulated Output Voltage (VOUT)
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
DS21826B-page 10
Function
Unregulated Supply Voltage
3.3
Unregulated Input Voltage Pin
(VIN)
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high
frequency.
© 2007 Microchip Technology Inc.
MCP1700
4.0
DETAILED DESCRIPTION
4.1
Output Regulation
4.3
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
4.2
Overtemperature
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1700
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
© 2007 Microchip Technology Inc.
DS21826B-page 11
MCP1700
5.0
FUNCTIONAL DESCRIPTION
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1700 is from 0 mA to 250 mA (VR ≥ 2.5V). The
input operating voltage range is from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.
5.1
Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
DS21826B-page 12
5.2
Output
The maximum rated continuous output current for the
MCP1700 is 250 mA (VR ≥ 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
esr range on the output capacitor can range from 0Ω to
2.0Ω.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage.
© 2007 Microchip Technology Inc.
MCP1700
6.0
APPLICATION CIRCUITS &
ISSUES
6.1
Typical Application
The MCP1700 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
MCP1700
GND
VOUT
1.8V
VIN
VOUT
IOUT
150 mA
COUT
1 µF Ceramic
FIGURE 6-1:
6.1.1
VIN
(2.3V to 3.2V)
CIN
1 µF Ceramic
Typical Application Circuit.
APPLICATION INPUT CONDITIONS
Package Type = SOT-23
Input Voltage Range = 2.3V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(1.6 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
PLDO = LDO Pass device internal power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
EQUATION 6-2:
T J ( MAX ) = P TOTAL × Rθ JA + T AMAX
TJ(MAX) = Maximum continuous junction
temperature.
PTOTAL = Total device power dissipation.
RθJA = Thermal resistance from junction to ambient.
TAMAX = Maximum ambient temperature.
The maximum power dissipation capability for a
package can be calculated given the junction-toambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
( T J ( MAX ) – T A ( MAX ) )
P D ( MAX ) = --------------------------------------------------Rθ JA
PD(MAX) = Maximum device power dissipation.
TJ(MAX) = Maximum continuous junction
temperature.
TA(MAX) = Maximum ambient temperature.
RθJA = Thermal resistance from junction to ambient.
EQUATION 6-4:
T J ( RISE ) = P D ( MAX ) × Rθ JA
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
PTOTAL = Maximum device power dissipation.
RθJA = Thermal resistance from junction to ambient.
EQUATION 6-5:
T J = T J ( RISE ) + T A
TJ = Junction Temperature.
TJ(RISE) = Rise in device junction temperature over
the ambient temperature.
TA = Ambient temperature.
The maximum continuous operating junction
temperature specified for the MCP1700 is +125°C. To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RθJA). The thermal resistance from junction to
ambient for the SOT-23 pin package is estimated at
230°C/W.
© 2007 Microchip Technology Inc.
DS21826B-page 13
MCP1700
6.3
Voltage Regulator
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
TJ = TJRISE + TA(MAX)
TJ = 90.2°C
Maximum Package Power Dissipation at +40°C
Ambient Temperature
SOT-23 (230.0°C/Watt = RθJA)
PD(MAX) = (125°C - 40°C) / 230°C/W
POWER DISSIPATION EXAMPLE
Package
Package Type = SOT-23
PD(MAX) = 369.6 milli-Watts
SOT-89 (52°C/Watt = RθJA)
PD(MAX) = (125°C - 40°C) / 52°C/W
Input Voltage
VIN = 2.3V to 3.2V
LDO Output Voltages and Currents
PD(MAX) = 1.635 Watts
TO-92 (131.9°C/Watt = RθJA)
PD(MAX) = (125°C - 40°C) / 131.9°C/W
VOUT = 1.8V
PD(MAX) = 644 milli-Watts
IOUT = 150 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
PLDO = 218.1 milli-Watts
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RθJA) is derived
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”, (DS00792), for more information regarding
this subject.
TJ(RISE) = PTOTAL x RqJA
TJRISE = 218.1 milli-Watts x 230.0°C/Watt
TJRISE = 50.2°C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS21826B-page 14
6.4
Voltage Reference
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
Ratio Metric Reference
PIC®
Microcontroller
1 µA Bias
MCP1700
CIN
1 µF
VIN
VOUT
GND
COUT
1 µF
VREF
ADO
AD1
Bridge Sensor
FIGURE 6-2:
voltage reference.
6.5
Using the MCP1700 as a
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700. The typical current limit for the
MCP1700 is 550 mA (TA +25°C).
© 2007 Microchip Technology Inc.
MCP1700
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
3-Pin SOT-23
CKNN
3-Pin SOT-89
CUYYWW
NNN
Standard
Extended Temp
Symbol
Voltage *
CK
CM
CP
CR
CS
CU
1.2
1.8
2.5
3.0
3.3
5.0
* Custom output voltages available upon request.
Contact your local Microchip sales office for more
information.
3-Pin TO-92
XXXXXX
XXXXXX
XXXXXX
YWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
1700
1202E
e3
TO^^
313256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2007 Microchip Technology Inc.
DS21826B-page 15
MCP1700
3-Lead Plastic Small Outline Transistor (TT or NB) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
2
1
e
e1
D
c
A
A2
φ
A1
L
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
3
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.89
–
Molded Package Thickness
A2
0.79
0.95
1.02
Standoff
A1
0.01
–
0.10
1.90 BSC
1.12
Overall Width
E
2.10
–
2.64
Molded Package Width
E1
1.16
1.30
1.40
Overall Length
D
2.67
2.90
3.05
Foot Length
L
0.13
0.50
0.60
Foot Angle
φ
0°
–
10°
Lead Thickness
c
0.08
–
0.20
Lead Width
b
0.30
–
0.54
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-104B
DS21826B-page 16
© 2007 Microchip Technology Inc.
MCP1700
3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
D1
E
H
L
1
N
2
b
b1
b1
e
E1
e1
A
C
Units
Dimension Limits
Number of Leads
MILLIMETERS
MIN
N
MAX
3
Pitch
e
1.50 BSC
Outside Lead Pitch
e1
3.00 BSC
Overall Height
A
1.40
1.60
Overall Width
H
3.94
4.25
Molded Package Width at Base
E
2.29
2.60
Molded Package Width at Top
E1
2.13
2.29
Overall Length
D
4.39
4.60
Tab Length
D1
1.40
1.83
Foot Length
L
0.79
1.20
Lead Thickness
c
0.35
0.44
Lead 2 Width
b
0.41
0.56
Leads 1 & 3 Width
b1
0.36
0.48
Notes:
1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-029B
© 2007 Microchip Technology Inc.
DS21826B-page 17
MCP1700
3-Lead Plastic Transistor Outline (TO or ZB) [TO-92]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
A
N
1
L
1 2
3
b
e
c
D
R
Units
Dimension Limits
Number of Pins
INCHES
MIN
N
MAX
3
Pitch
e
Bottom to Package Flat
D
.125
.050 BSC
.165
Overall Width
E
.175
.205
Overall Length
A
.170
.210
Molded Package Radius
R
.080
.105
Tip to Seating Plane
L
.500
–
Lead Thickness
c
.014
.021
Lead Width
b
.014
.022
Notes:
1. Dimensions A and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-101B
DS21826B-page 18
© 2007 Microchip Technology Inc.
MCP1700
APPENDIX A:
REVISION HISTORY
Revision B (February 2007)
• Updated Packaging Information.
• Corrected Section “Product Identification
System”.
• Changed X5R to X7R in Notes to “DC
Characteristics”, “Temperature
Specifications”, and “Typical Performance
Curves” .
Revision A (November 2005)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS21826B-page 19
MCP1700
NOTES:
DS21826B-page 20
© 2007 Microchip Technology Inc.
MCP1700
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X-
XXX
X
X
/XX
MCP1700
Tape &
Reel
Voltage
Output
Tolerance
Temp.
Range
Package
Device:
MCP1700: Low Quiescent Current LDO
Tape and Reel:
T:
Standard Output
Voltage: *
120
180
250
300
330
500
Tape and Reel only applies to SOT-23 and SOT-89
devices
=
=
=
=
=
=
1.2V
1.8V
2.5V
3.0V
3.3V
5.0V
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information
Tolerance:
2
= 2%
Temperature Range:
E
= -40°C to +125°C (Extended)
Package:
MB = Plastic Small Outline Transistor (SOT-89), 3-lead
TO = Plastic Small Outline Transistor (TO-92), 3-lead
TT = Plastic Small Outline Transistor SOT-23), 3-lead
© 2007 Microchip Technology Inc.
Examples:
SOT-89 Package:
a)
b)
c)
d)
e)
f)
MCP1700T-1202E/MB:
MCP1700T-1802E/MB:
MCP1700T-2502E/MB:
MCP1700T-3002E/MB:
MCP1700T-3302E/MB:
MCP1700T-5002E/MB:
1.2V VOUT
1.8V VOUT
2.5V VOUT
3.0V VOUT
3.3V VOUT
5.0V VOUT
TO-92 Package:
g)
h)
i)
j)
k)
l)
MCP1700-1202E/TO:
MCP1700-1802E/TO:
MCP1700-2502E/TO:
MCP1700-3002E/TO:
MCP1700-3302E/TO:
MCP1700-5002E/TO:
1.2V VOUT
1.8V VOUT
2.5V VOUT
3.0V VOUT
3.3V VOUT
5.0V VOUT
SOT-23 Package:
a)
b)
c)
d)
e)
f)
MCP1700T-1202E/TT:
MCP1700T-1802E/TT:
MCP1700T-2502E/TT:
MCP1700T-3002E/TT:
MCP1700T-3302E/TT:
MCP1700T-5002E/TT:
1.2V VOUT
1.8V VOUT
2.5V VOUT
3.0V VOUT
3.3V VOUT
5.0V VOUT
DS21826B-page 21
MCP1700
NOTES:
DS21826B-page 22
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS21826B-page 23
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
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Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
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Tel: 91-11-4160-8631
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Tel: 43-7242-2244-39
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Tel: 45-4450-2828
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Tel: 91-20-2566-1512
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Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xian
Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
12/08/06
DS21826B-page 24
© 2007 Microchip Technology Inc.