ISSI IS43LD32800A Four internal banks for concurrent operation Datasheet

IS43/46LD16160A
IS43/46LD32800A
256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION
AUGUST 2014
FEATURES
description
• Low-voltage Core and I/O Power Supplies
VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V,
VDD1 = 1.70-1.95V
• High Speed Un-terminated Logic(HSUL_12) I/O
Interface
• Clock Frequency Range : 10MHz to 533MHz
(data rate range : 20Mbps to 1066Mbps per I/O)
• Four-bit Pre-fetch DDR Architecture
• Multiplexed, double data rate, command/address inputs
• Four internal banks for concurrent operation
• Bidirectional/differential data strobe per byte of
data (DQS/DQS#)
• Programmable Read/Write latencies(RL/WL)
and burst lengths(4,8 or 16)
• ZQ Calibration
• On-chip temperature sensor to control self refresh rate
• Partial –array self refresh(PASR)
• Deep power-down mode(DPD)
• Operation Temperature
The IS43/46LD16160A/32800A is 256Mbit CMOS
LPDDR2 DRAM. The device is organized as 4 banks
of 4Meg words of 16bits or 2Meg words of 32bits.
This product uses a double-data-rate architecture to
achieve high-speed operation. The double data rate
architecture is essentially a 4N prefetch architecture
with an interface designed to transfer two data words
per clock cycle at the I/O pins. This product offers fully
synchronous operations referenced to both rising and
falling edges of the clock. The data paths are internally
pipelined and 4n bits prefetched to achieve very high
bandwidth.
Commercial (TC = 0°C to 85°C)
Industrial (TC = -40°C to 85°C)
Automotive, A1 (TC = -40°C to 85°C)
Automotive, A2 (TC = -40°C to 105°C)
OPTIONS
• Configuration:
− 16Mx16 (4M x 16 x 4 banks)
− 8Mx32 (2M x 32 x 4 banks)
Package:
− 134-ball BGA for x16 / x32
− 168-ball PoP BGA for x32
ADDRESS TABLE
Parameter
Row Addresses
Column Addresses
Bank Addresses
Refresh Count
8Mx32
R0-R12
C0-C7
BA0-BA1
4096
16Mx16
R0-R12
C0-C8
BA0-BA1
4096
kEY TIMING PARAMETERS
Speed
Grade
-18
-25
-3
Data
Rate
(Mb/s)
1066
800
667
Write
Read tRCD/
Latency Latency tRP
4
3
2
8
6
5
Typical
Typical
Typical
Note: Other clock frequencies/data rates supported; please
refer to AC timing tables.
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
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IS43/46LD16160A
IS43/46LD32800A
BALL ASSIGNMENTS AND DESCRIPTIONS
134-ball FBGA (x32), 0.65mm pitch
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
DNU
DNU
DNU
NC
NC
VDD1
VSS
RFU
VSS
VDD2
ZQ
VSSCA
CA9
CA8
VDDCA
CA6
VDD2
4
5
7
8
10
DNU
DNU
DQ26
DNU
DQ31
VSS
VSSQ
VDDQ
DQ25
VSSQ
VDDQ
VDDQ
DQ30
DQ27
DQS3_t
DQS3_c
VSSQ
DQ28
DQ24
DM3
DQ15
VDDQ
VSSQ
CA7
VSSQ
DQ11
DQ13
DQ14
DQ12
VDDQ
CA5
Vref(CA)
DQS1_c
DQS1_t
DQ10
DQ9
DQ8
VSSQ
VDDCA
VSS
CK_c
DM1
VDDQ
VSSCA
NC
CK_t
VSSQ
VDDQ
VDD2
VSS
Vref(DQ)
CKE
RFU
RFU
DM0
VDDQ
CS_n
RFU
RFU
DQS0_c
DQS0_t
DQ5
DQ6
DQ7
VSSQ
CA4
CA3
CA2
VSSQ
DQ4
DQ2
DQ1
DQ3
VDDQ
VSSCA
VDDCA
CA1
DQ19
DQ23
DM2
DQ0
VDDQ
VSSQ
VSS
VDD2
CA0
VDDQ
DQ17
DQ20
DQS2_t
DQS2_c
VSSQ
VDD1
VSS
NC
VSS
VSSQ
VDDQ
DQ22
VSSQ
VDDQ
DNU
NC
NC
VDD2
VDD1
DQ16
DQ18
DQ21
DNU
DNU
DNU
DNU
DNU
1
2
9
10
4
5
6
7
DQ29
9
VDD1
3
VDD2
6
8
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
DQ
CA
Power
Ground
No ball
ZQ
Clock
NC, DNU, RFU
Top View (ball down)
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IS43/46LD16160A
IS43/46LD32800A
BALL ASSIGNMENTS AND DESCRIPTIONS
134-ball FBGA (x16), 0.65mm pitch
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
9
10
DNU
DNU
DNU
DNU
DNU
NC
NC
VDD2
VDD1
NC
NC
NC
DNU
VDD1
VSS
RFU
VSS
VSSQ
VDDQ
NC
VSSQ
VDDQ
VSS
VDD2
ZQ
VDDQ
NC
NC
NC
NC
VSSQ
VSSCA
CA9
CA8
NC
NC
NC
DQ15
VDDQ
VSSQ
VDDCA
CA6
CA7
VSSQ
DQ11
DQ13
DQ14
DQ12
VDDQ
VDD2
CA5
Vref(CA)
DQS1_c
DQS1_t
DQ10
DQ9
DQ8
VSSQ
VDDCA
VSS
CK_c
DM1
VDDQ
VSSCA
NC
CK_t
VSSQ
VDDQ
CKE
RFU
RFU
DM0
VDDQ
CS_n
RFU
RFU
DQS0_c
DQS0_t
DQ5
DQ6
DQ7
VSSQ
CA4
CA3
CA2
VSSQ
DQ4
DQ2
DQ1
DQ3
VDDQ
VSSCA
VDDCA
CA1
NC
NC
NC
DQ0
VDDQ
VSSQ
VSS
VDD2
CA0
VDDQ
NC
NC
NC
NC
VSSQ
VDD1
VSS
NC
VSS
VSSQ
VDDQ
NC
VSSQ
VDDQ
DNU
NC
NC
VDD2
VDD1
NC
NC
NC
DNU
DNU
DNU
DNU
DNU
1
2
9
10
3
4
4
5
6
5
6
7
VDD2
7
8
VSS
8
Vref(DQ)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
DQ
CA
Power
Ground
No ball
ZQ
Clock
NC, DNU, RFU
Top View (ball down)
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IS43/46LD16160A
IS43/46LD32800A
168-ball FBGA - 12mm x 12mm (x32), 0.5mm pitch
1
2
3
4
5
6
7
8
9
10
11
12
A
DNU
DNU
NC
NC
NC
NC
NC
NC
NC
NC
V DD1
V SSQ
B
DNU
DNU
V DD1
NC
V SS
NC
NC
V SS
NC
V SS
V DD2
DQ31 V DDQ
C
V SS
V DD2
D
NC
E
21
22
23
V SS
DNU
DNU
A
V DD2 DNU
DNU
B
DQ15
V SSQ
C
NC
V DDQ DQ14
D
NC
NC
DQ12 DQ13
E
F
NC
V SS 1
DQ11
V SSQ
F
G
NC
NC
V DDQ DQ10
G
H
NC
NC
DQ8
DQ9
H
J
NC
V SS 1
DQS1
V SSQ
J
K
NC
NC
V DDQ DQS#1
L
NC
NC
V DD2
DM1
L
M
NC
V SS
V REFDQ
V SS
M
N
NC
V DD1
V DD1
DM0
N
P
ZQ
V REFCA
DQS#0 V SSQ
P
R
V SS
V DD2
V DDQ DQS0
R
T
CA9
CA8
DQ6
DQ7
T
U
CA7
V DDCA
DQ5
V SSQ
U
V
V SSCA
CA6
V DDQ
DQ4
V
W
CA5
V DDCA
DQ2
DQ3
W
Y
CK#
CK
DQ1
V SSQ
Y
AA
V SS
V DD2
V DDQ
DQ0
AA
AB
DNU
DNU
CS#
NC
V DD1
CA1
V SSCA
V DD2 DNU
DNU
AB
AC
DNU
DNU
CKE
NC
V SS
CA0
CA2 V DDCA
AC
1
2
3
4
5
6
1
7
1
CA3
8
CA4
V SS
9
1
13
14
DQ30 DQ29
DQ28
DQ18
V DD2
V SS
DQ16 V DDQ
NC
NC
V SSQ DQ17 DQ19
10
11
12
13
14
15
16
17
V SSQ DQ26 DQ25
18
DQ20 V DDQ DQ22 DQS2
15
16
17
20
V SSQ DQS#3 V DD1
DQ27 V DDQ DQ24 DQS3
V SSQ DQ21 DQ23
19
V DDQ
V DDQ
DM3
DM2
V SSQ DQS#2 V DD1
V SS
DNU
DNU
19
21
22
23
18
20
K
Top View (ball down)
Note:
1. Balls labeled Vss1 (at coordinates B5, B8, F2, J2, AC9) may be connected to Vss or left unconnected.
2. Balls indicated as (NC) are no connects.
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INPUT/OUTPUT FUNCTIONAL DESCRIPTION
Pad Definition and Description
Type
Description
CK_t, CK_c
Name
Input
Clock: CK_t and CK_c are differential clock inputs. All Double Data Rate (DDR) CA
inputs are sampled on both positive and negative edge of CK_t. Single Data Rate (SDR)
inputs, CS_n and CKE, are sampled at the positive Clock edge.
Clock is defined as the differential pair, CK_t and CK_c. The positive Clock edge is
defined by the crosspoint of a rising CK_t and a falling CK_c. The negative Clock edge is
defined by the crosspoint of a falling CK_t and a rising CK_c.
CKE
Input
Clock Enable: CKE HIGH activates and CKE LOW deactivates internal clock signals and
therefore device input buffers and output drivers. Power savings modes are entered and
exited through CKE transitions.
CKE is considered part of the command code. See Command Truth Table for command
code descriptions.
CKE is sampled at the positive Clock edge.
CS_n
Input
Chip Select: CS_n is considered part of the command code. See Command Truth Table
for command code descriptions.
CS_n is sampled at the positive Clock edge.
CA0 - CA9
Input
DDR Command/Address Inputs: Uni-directional command/address bus inputs.
CA is considered part of the command code. See Command Truth Table for command
code descriptions.
I/O
Data Inputs/Output: Bi-directional data bus
I/O
Data Strobe (Bi-directional, Differential): The data strobe is bi-directional (used for
read and write data) and differential (DQS_t and DQS_c). It is output with read data and
input with write data. DQS_t is edge-aligned to read data and centered with write data.
DQ0 - DQ15
(x16)
DQ0 - DQ31
(x32)
DQS0_t,
DQS0_c,
DQS1_t,
DQS1_c
(x16)
DQS0_t DQS3_t,
DQS0_c DQS3_c
(x32)
For x16, DQS0_t and DQS0_c correspond to the data on DQ0 - DQ7; DQS1_t and
DQS1_c to the data on DQ8 - DQ15.
For x32 DQS0_t and DQS0_c correspond to the data on DQ0 - DQ7, DQS1_t and
DQS1_c to the data on DQ8 - DQ15, DQS2_t and DQS2_c to the data on DQ16 - DQ23,
DQS3_t and DQS3_c to the data on DQ24 - DQ31.
Input
DM0-DM1
(x16)
DM0 - DM3
(x32)
Input Data Mask: For LPDDR2 devices that do not support the DNV feature, DM is the
input mask signal for write data. Input data is masked when DM is sampled HIGH
coincident with that input data during a Write access. DM is sampled on both edges of
DQS_t. Although DM is for input only, the DM loading shall match the DQ and DQS_t (or
DQS_c).
DM0 is the input data mask signal for the data on DQ0-7.
For x16 and x32 devices, DM1 is the input data mask signal for the data on DQ8-15.
For x32 devices, DM2 is the input data mask signal for the data on DQ16-23 and DM3 is
the input data mask signal for the data on DQ24-31.
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IS43/46LD32800A
Name
Type
Description
VDD1
Supply Core Power Supply 1
VDD2
Supply Core Power Supply 2
VDDCA
Supply Input Receiver Power Supply:
input buffers.
VDDQ
Supply I/O Power Supply: Power supply for Data input/output buffers.
VREF(CA)
Supply Reference Voltage for CA Command and Control Input Receiver:
for all CA0-9, CKE, CS_n, CK_t, and CK_c input buffers.
VREF(DQ)
Supply Reference Voltage for DQ Input Receiver:
VSS
Supply Ground
VSSCA
Supply Ground for Input Receivers
VSSQ
Supply I/O Ground
ZQ
I/O
Power supply for CA0-9, CKE, CS_n, CK_t, and CK_c
Reference voltage
Reference voltage for all Data input buffers.
Reference Pin for Output Drive Strength Calibration
NOTE 1 Data includes DQ and DM.
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FUNCTIONAL BLOCK DIAGRAM
CS#
CA0
CA1
CA2
CA3
CA4
CA5
CA6
CA7
CA8
CA9
Control
logic
Command / Address
Multiplex and Decode
CKE
CK
CK#
Mode
registers
x
Refresh x
counter
Rowaddress
MUX
Bank 3
Bank 2
Bank 1
Bank 0
Bank 3
Bank 2
Bank 1
Bank 0
rowaddress
latch
and
decoder
COL0
n
Memory array
4n
Read
latch
n
MUX
n
n
Sense amplifier
2
I/O gating
DM mask logic
Bank
control
logic
Columnaddress
counter/
latch
y-1
Column
decoder
DRVRS
DQ0–DQn-1
DQS
generator
DQS, DQS#
Input
registers
4
4
4n
2
n
DATA
WRITE
FIFO
and
4n
drivers
CK, CK#
1
8
Mask
CK out
4n
CK in
Data
4
4
4
4
4
4
n
n
n
n
n
n
n
n
DQS, DQS#
4
RCVRS
n
DM
COL0
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IS43/46LD16160A
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SIMPLIFIED STATE DIAGRAM
Power
applied
Deep
power-down
DPDX
Power-on
RE
Automatic sequence
SET
Resetting
MR reading
Command sequence
MRR
Self
refreshing
Resetting
DPD
MRR
SR
EF
REF
Idle 1
Refreshing
X
M
PD
RW
Idle
MR reading
X
T
SE
RE
X
PD
Resetting
power-down
SR
EF
PD
PD
Idle
power-down
MR writing
ACT
Active
power-down
Active
MR reading
PD
X
PD
R
MR
Active
BST
PR
BST
RD
WR
RD
Reading
A
WR
RD
Writing
A
WR
PR, PRA
WRA
RDA
Writing
with
auto precharge
Reading
with
auto precharge
Precharging
Abbreviation
ACT
RD(A)
WR(A)
PR(A)
MRW
MRR
Function
Active
Read (w/ Autoprecharge)
Write (w/ Autoprecharge)
Precharge (All)
Mode Register Write
Mode Register Read
Abbreviation
PD
PDX
DPD
DPDX
BST
RESET
Function
Enter Power Down
Exit Power Down
Enter Deep Power Down
Abbreviation
REF
SREF
Function
Refresh
Enter self refresh
SREFX
Exit self refresh
Exit Deep Power Down
Burst Terminate
Reset is achieved through MRW command
Note: For LPDDR2-S4 SDRAM in the idle state, all banks are precharged.
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FUNCTIONAL DESCRIPTION
LPDDR2-S4 is a high-speed SDRAM device internally configured as an 4-Bank memory. This device contains
268,435,456 bits (256 Megabit)
All LPDDR2 devices use a double data rate archiecture on the Command/Address (CA) bus to reduce the number
of input pins in the system. The 10-bit CA bus contains command, address, and Bank/Row Buffer information. Each
command uses one clock cycle, during which command information is transferred on both the positive and negative
edge of the clock.
This LPDDR2-S4 device also uses a double data rate architecture on the DQ pins to achieve high speed operation.
The double data rate architecture is essentially a 4n prefetch architecture with an interface designed to transfer two
data bits per DQ every clock cycle at the I/O pins. A single read or write access for the memory device effectively
consists of a single 4n-bit wide, one clock cycle data transfer at the internal SDRAM core and four corresponding nbit wide, one-half-clock-cycle data transfers at the I/O pins.
Read and write accesses to the LPDDR2 are burst oriented; accesses start at a selected location and continue for a
programmed number of locations in a programmed sequence.
Accesses begin with the registration of an Activate command, which is then followed by a Read or Write command.
The address and BA bits registered coincident with the Activate command are used to select the row and the Bank
to be accessed. The address bits registered coincident with the Read or Write command are used to select the Bank
and the starting column location for the burst access.
Prior to normal operation, the LPDDR2 must be initialized. The following section provides detailed information covering device initialization, register definition, command description and device operation.
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Power-up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation.
The following sequence is required for Power-up and Initialization.
1. Voltage ramp up sequence is required :
A. While applying power, attempt to maintain CKE below 0.2 x VDDCA and all other inputs must be between VILmin
and VIHmax. The device outputs remain at High-Z while CKE is held LOW. The voltage ramp time tINIT0 ( Tb-Ta)
must be no greater than 20 ms from Tb which is point for all supply and reference voltage are within their defined
operating ranges , to Ta which is point for any power supply first reaches 300mV.
B. The following conditions apply for voltage ramp after Ta is reached,
− VDD1 must be greater than VDD2-200mV AND
− VDD1 and VDD2 must be greater than VDDCA-200mV AND
− VDD1 and VDD2 must be greater than VDDQ-200mV AND
− VREF must always be less than all other supply voltages
− The voltage difference between any of VSS, VSSQ, and VSSCA pins must not exceed 100mV
2. Start clock and maintain stable condition.
Beginning at Tb, CKE must remain LOW for at least tINIT1 = 100 ns, after which CKE can be asserted HIGH. The
clock must be stable at least tINIT2 = 5 × tCK prior to the first CKE LOW-to-HIGH transition (Tc). CKE, /CS, and CA
inputs must observe setup and hold requirements (tIS, tIH) with respect to the first rising clock edge (and to subsequent falling and rising edges).
Once the ramping of the supply voltages is complete ( Tb), CKE must be maintained LOW. DQ, DM, DQS and DQS#
voltage levels must be between VSSQ and VDDQ during voltage ramp to avoid latchup. CK, /CK, /CS, and CA input
levels must be between VSSCA and VDDCA during voltage ramp to avoid latch-up
If any Mode Register Read ( MRRs ) are issued, the clock period must be within the range defined for tCKb (18ns to
100ns). Mode Register Write (MRWs) can be issued at normal clock frequencies as long as all AC timings are met.
Some AC parameters could have relaxed timings before the system is appropriately configured. While keeping CKE
HIGH, NOP commands must be issued for at least tINIT3 = 200μs (Td).
3. RESET Command
After tINIT3 is satisfied, the MRW RESET command must be issued (Td).
An optional PRECHARGE ALL command can be issued prior to the MRW RESET command. Wait at least tINIT4
while keeping CKE asserted and issuing NOP commands
4. Mode Register Reads and Device Auto Initialization (DAI) Polling:
After tINIT4 is satisfied (Te), only MRR commands and power-down entry/exit commands are supported. After Te,
CKE can go LOW in alignment with power-down entry and exit specifications.
Use the MRR command to poll the DAI bit and report when device auto initialization is complete; otherwise, the controller must wait a minimum of tINIT5, or until the DAI bit is set before proceeding.
As the memory output buffers are not properly configured by Te, some AC parameters must have relaxed timings
before the system is appropriately configured. After the DAI bit (MR0, DAI) is set to zero by the memory device (DAI
complete), the device is in the idle state (Tf ). DAI status can be determined by issuing the MRR command to MR0.
The device sets the DAI bit no later than tINIT5 after the RESET command. The controller must wait at least tINIT5 or
until the DAI bit is set before proceeding
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5. ZQ Calibration
After tINIT5 (Tf ), the MRR initialization calibration (ZQ_CAL) command can be issued to the memory (MR10).
This command is used to calibrate output impedance over process, voltage, and temperature. In systems where more
than one LPDDR2 device exists on the same bus, the controller must not overlap MRR ZQ_CAL commands. The
device is ready for normal operation after tZQINIT.
6. Normal Operation
After tZQINIT (Tg), MRW commands must be used to properly configure the memory . Specifically, MR1, MR2, and
MR3 must be set to configure the memory for the target frequency and memory configuration
After the initialization sequence is complete, the device is ready for any valid command. After Tg, the clock frequency
can be changed using the procedure described in Input Clock Frequency Changes and Clock Stop Events‖.
Initialization Timing
Symbol Parameter
tINIT0
Value
Maximum Power Ramp Time
Unit
min
max
-
20
ms
tINIT1
Minimum CKE low time after completion of power ramp
100
-
ns
tINIT2
Minimum stable clock before first CKE high
5
-
tCK
tINIT3
Minimum idle time after first CKE assertion
200
-
us
tINIT4
Minimum idle time after Reset command, this time will be about 2 x
tRFCab + tRPab
1
-
us
tINIT5
Maximum duration of Device Auto-Initialization
-
10
us
tCKb
Clock cycle time during boot
18
100
ns
ZQ initial calibration
1
-
us
tZQINIT
Figure - Power Ramp and Initialization Sequence
Ta
Tb
t INIT2
Tc
Td
Te
Tf
Tg
CK/CK#
t INIT0
Supplies
t INIT1
t INIT3
CKE
t ISCKE
CA
t INIT4
RESET
t INIT5
MRR
t ZQINIT
MRW
ZQ_CAL
Valid
R TT
DQ
Initialization After RESET (without voltage ramp):
If the RESET command is issued before or after the power-up initialization sequence, the re-initialization procedure
must begin at Td
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Power-Off Sequence
Use the following sequence to power off the device. Unless specified otherwise, this procedure is mandatory and
applies to S4 devices.
While powering off, CKE must be held LOW (≤ 0.2 × VDDCA); all other inputs must be between VILmin and VIHmax.
The device outputs remain at High-Z while CKE is held LOW.
DQ, DM, DQS, and /DQS voltage levels must be between VSSQ and VDDQ during the power-off sequence to avoid
latch-up. CK, /CK, /CS, and CA input levels must be between VSSCA and VDDCA during the power-off sequence to
avoid latch-up.
Tx is the point where any power supply drops below the minimum value specified in the DC operating condition table.
Tz is the point where all power supplies are below 300mV. After Tz, the device is powered off
Required Power Supply Conditions Between Tx and Tz:
• VDD1 must be greater than VDD2 - 200mV
• VDD1 must be greater than VDDCA - 200mV
• VDD1 must be greater than VDDQ - 200mV
• VREF must always be less than all other supply voltages
The voltage difference between VSS, VSSQ, and VSSCA must not exceed 100mV.
For supply and reference voltage operating conditions, see Recommended DC Operating Conditions table.
Uncontrolled Power-Off Sequence
When an uncontrolled power-off occurs, the following conditions must be met:
1.At Tx, when the power supply drops below the minimum values specified, all power supplies must be turned off and
all power-supply current capacity must be at zero, except for any static charge remaining in the system.
2.After Tz , the device must power off. The time between Tx and Tz must not exceed 20ms. During this period, the
relative voltage between power supplies is uncontrolled. VDD1 and VDD2 must decrease with a slope lower than 0.5
V/μs between Tx and Tz.
An uncontrolled power-off sequence can occur a maximum of 400 times over the life of the device
Mode Register Definition
LPDDR2 devices contain a set of mode registers used for programming device operating parameters, reading device
information and status, and for initiating special operations such as DQ calibration, ZQ calibration, and device reset.
12
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Mode Register Assignment
The MRR command is used to read from a register. The MRW command is used to write to a register.
Mode Register Assignment
MR#
MA <7:0>
Function
Access
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
0
00H
Device Info.
R
DI
DAI
1
01H
Device Feature1
W
nWR (for AP)
2
02H
Device Feature2
W
(RFU)
RL & WL
3
03H
I/O Config-1
W
(RFU)
DS
4
04H
Refresh Rate
R
5
05H
Basic Config-1
R
LPDDR2 Manufacturer ID
6
06H
Basic Config-2
R
Revision ID1
7
07H
Basic Config-3
R
Revision ID2
8
08H
Basic Config-4
R
9
09H
Test Mode
W
Vendor-Specific Test Mode
10
0AH
IO Calibration
W
Calibration Code
11~15
0BH~0FH
(reserved)
(RFU)
TUF
WC
BT
BL
(RFU)
I/O width
Refresh Rate
Density
Type
(RFU)
Mode Register Assignment
MR#
MA <7:0>
Function
Access
16
10H
PASR_BANK
W
Bank Mask
17
11H
PASR_Seg
W
Segment Mask
18-19
12H-13H
(Reserved)
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OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
(RFU)
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Mode Register Assignment
MR#
MA <7:0>
20-31
18H-1FH
Function
Access
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Reserved
Mode Register Assignment (Reset Command & RFU part)
MR#
MA <7:0>
Function
Access
32
20H
DQ calibration pattern A
R
See “Data Calibration Pattern Description”
33-39
21H-27H
(Do Not Use)
40
28H
DQ calibration pattern B
R
See “Data Calibration Pattern Description”
41-47
29H-2FH
(Do Not Use)
48-62
30H-3EH
(Reserved)
63
3FH
Reset
64-126
40H-7EH
(Reserved)
127
7FH
(Do Not Use)
128-190
80H-BEH
(Reserved for Vendor Use)
191
BFH
(Do Not Use)
192-254
C0H-FEH
(Reserved for Vendor Use)
255
FFH
(Do Not Use)
(RFU)
W
X
(RFU)
(RFU)
(RFU)
Notes:
1. RFU bits shall be set to ‘0’ during Mode Register writes.
2.RFU bits shall be read as ‘0’ during Mode Register reads.
3.All Mode Registers that are specified as RFU or write-only shall return undefined data when read and DQS shall be toggled.
4.All Mode Registers that are specified as RFU shall not be written.
5.See Vendor Device Datasheets for details on Vendor Specific Mode Registers.
6.Writes to read-only registers shall have no impact on the functionality of the device.
MR0_Device Information (MA<7:0> = 00H):
OP7
OP6
OP5
OP4
OP3
OP2
(RFU)
OP1
OP0
14
DI (Device Information)
DAI (Device Auto-Initialization
Status)
OP1
OP0
DI
DAI
Read-only
Read-only
0B: SDRAM
1B: Do Not Use
0B: DAI complete
1B: DAI still in progress
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MR1_Devcie Feature 1 (MA<7:0> = 01H):
OP7
OP6
OP5
nWR (for AP)
OP4
OP3
WC
BT
OP2
OP1
OP0
BL
010B: BL4 (default)
OP<2:0>
BL (Burst Length)
011B: BL8
Write-only
100B: BL16
All others: reserved
*1
OP3
BT (Burst Type)
Write-only
OP4
WC (Wrap)
Write-only
0B: Sequential (default)
1B: Interleaved
0B: Wrap (default)
1B: No wrap (allowed for SDRAM BL4 only)
001B: nWR=3 (default)
010B: nWR=4
011B: nWR=5
OP<7:5>
*2
nWR
Write-only
100B: nWR=6
101B: nWR=7
110B: nWR=8
All others: reserved
Notes:
1. BL16, interleaved is not an official combination to be supported.
2. Programmed value in nWR register is the number of clock cycles which determines when to start internal
precharge operation for a write burst with AP enabled. It is determined by RU(tWR/tCK)
Burst Sequence by BL, BT, and WC
C3
C2
C1 C0
x
x
0B
0B
x
x
1B
0B
x
x
x
0B
WC
BT BL
wrap any
4
nw any
Burst Cycle Number and Burst Address Sequence
1
2
3
4
0
1
2
3
2
3
0
1
y
6
7
8
9
10
11
12
13
14
15
16
y+1 y+2 y+3
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C1 C0
WC
Burst Cycle Number and Burst Address Sequence
C3
C2
BT BL
x
0B
0B
0B
x
0B
1B
0B
x
1B
0B
0B
x
1B
1B
0B
x
0B
0B
0B
x
0B
1B
0B
x
1B
0B
0B
x
1B
1B
0B
x
x
x
0B
0B
0B
0B
0B
0
1
2
3
4
5
6
7
8
0B
0B
1B
0B
2
3
4
5
6
7
8
9
0B
1B
0B
0B
4
5
6
7
8
9
A
0B
1B
1B
0B
6
7
8
9
A
B
1B
0B
0B
0B wrap
8
9
A
B
C
1B
0B
1B
0B
A
B
C
D
1B
1B
0B
0B
C
D
E
1B
1B
1B
0B
E
F
0
x
x
x
0B
int
illegal (not allowed)
x
x
x
0B
nw any
illegal (not allowed)
seq
8
wrap
int
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
6
7
0
1
2
3
4
5
0
1
2
3
4
5
6
7
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
6
7
4
5
2
3
0
1
11
12
13
14
15
16
9
A
B
C
D
E
F
A
B
C
D
E
F
0
1
B
C
D
E
F
0
1
2
3
C
D
E
F
0
1
2
3
4
5
D
E
F
0
1
2
3
4
5
6
7
E
F
0
1
2
3
4
5
6
7
8
9
F
0
1
2
3
4
5
6
7
8
9
A
B
1
2
3
4
5
6
7
8
9
A
B
C
D
nw any
9
10
illegal (not allowed)
seq
16
Notes:
1. C0 input is not present on CA bus. It is implied zero.
2. For BL=4, the burst address represents C1~C0.
3. For BL=8, the burst address represents C2~C0.
4. For BL=16, the burst address represents C3~C0.
5. For no-wrap, BL4, the burst must not cross the page boundary or the sub-page boundary.The variabley can start at any address with C0 equal to 0, but must not start at any address shown below
Non-Wrap Restrictions
Width
64Mb
128Mb/256Mb
512Mb/1Gb/2Gb
4Gb/8Gb
Cannot cross full page boundary
X16
FE, FF, 00, 01
1FE, 1FF, 000, 001
3FE, 3FF, 000, 001
7FE, 7FF, 000, 001
X32
7E, 7F, 00, 01
FE, FF, 00, 01
1FE, 1FF, 000, 001
3FE, 3FF, 000, 001
Cannot cross sub-page boundary
X16
7E, 7F, 80, 81
0FE, 0FF, 100, 101
1FE, 1FF, 200, 201
3FE, 3FF, 400, 401
X32
none
none
None
none
Note: Non-wrap BL=4 data orders shown are prohibited.
.
16
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MR2_Devcie Feature 2 (MA<7:0> = 02H):
OP7
OP6
OP5
OP4
OP3
(RFU)
OP2
OP1
OP0
RL & WL
0001B: RL3 / WL1 (default)
0010B: RL4 / WL2
0011B: RL5 / WL2
RL & WL (Read Latency & Write
OP<3:0>
Write-only
Latency)
0100B: RL6 / WL3
0101B: RL7 / WL4
0110B: RL8 / WL4
All others: reserved
MR3_I/O Configuration 1 (MA<7:0> = 03H):
OP7
OP6
OP5
OP4
OP3
OP2
(RFU)
OP1
OP0
DS
0000B: reserved
0001B: 34.3 ohm typical
0010B: 40.0 ohm typical (default)
OP<3:0>
DS (Drive Strength)
Write-only
0011B: 48.0 ohm typical
0100B: 60.0 ohm typical
0101B: reserved
0110B: 80.0 ohm typical
All others: reserved
MR4_Device Temperature (MA<7:0> = 04H):
OP7
OP6
TUF
OP5
OP4
OP3
(RFU)
OP2
OP1
OP0
SDRAM Refresh Rate
000B: 4 x tREFI, SDRAM Low Temp. operating limit exceeded
001B: 4 × tREFI, 4 × tREFIpb, 4 × tREFW
OP<2:0>
SDRAM Refresh Rate
Read-only
010B: 2 × tREFI, 2 × tREFIpb, 2 × tREFW ,
011B: 1 × tREFI, 1 × tREFIpb, 1 × tREFW (<= 85C)
100B: RFU
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101B: 0.25 × tREFI, 0.25 × tREFIpb, 0.25 × tREFW ,
don’t re-rate SDRAM AC timing
110B: 0.25 × tREFI, 0.25 × tREFIpb, 0.25 × tREFW ,
derate SDRAM AC timing
111B: SDRAM
High temperature operating limit
exceeded
OP7
TUF (Temperature Update Flag)
0B: (not used)
Read-only
1B: (always)
Notes:
1. A Mode Register Read from MR4 will reset OP7 to “0”.
2. OP7 is reset to “0” at power-up.
3. If OP2 equals “1”, the device temperature is greater than 85C.
4. OP7 is set to “1”, if OP2~OP0 has changed at any time since the last read of MR4.
5. LPDDR2 might not operate properly when OP<2:0> = 000B or 111B.
6. For specified operating temperature range and maximum operating temperature.
7. LPDDR2 devices must be derated by adding 1.875ns to the following core timing parameters: tRCD, tRC, tRAS, tRP,
and tRRD. The tDQSCK parameter must be derated Prevailing clock frequency specifications and related setup and
hold timings remain unchanged.
8. The recommended frequency for reading MR4 is provided in “Temperature Sensor”
MR5_Basic Configuration 1 (MA<7:0> = 05H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
LPDDR2 Manufacturer ID
OP<7:0>
Manufacturer ID
0001 1011B: ISSI
Read-only
All Others : Reserved
MR6_Basic Configuration 2 (MA<7:0> = 06H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Revision ID1
OP<7:0>
Revision ID1
Read-only
00000000B: A-version
MR7_Basic Configuration 3 (MA<7:0> = 07H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Revision ID2
OP<7:0>
18
Revision ID2
Read-only
00000000B: A-version
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MR8_Basic Configuration 4 (MA<7:0> =08H):
OP7
OP6
I/O width
OP5
OP4O
OP3
Density
OP<1:0>
Type
Read-only
OP<5:0>
Density
Read-only
OP<7:6>
I/O width
Read-only
OP2
OP1
OP0
Type
00B:S4 SDRAM
01B: Reserved
10B: Reserved
11B: Reserved
0000B: 64Mb (Reserved)
0001B: 128Mb (Reserved)
0010B: 256Mb
0011B: 512Mb (Reserved)
0100B: 1Gb (Reserved)
0101B: 2Gb (Reserved)
0110B: 4Gb (Reserved)
0111B: 8Gb (Reserved)
1000B: 16Gb (Reserved)
1001B: 32Gb (Reserved)
All others: Reserved
00B: x32
01B: x16
10B: x8 (Reserved)
11B: not used
MR9_Test Mode (MA<7:0> =09H):
OP7
OP6
OP5
OP4O
OP3
OP2
Vendor-specific Test Mode
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OP0
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MR10_Calibration (MA<7:0> = 0AH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Calibration Code
0xFF: Calibration command after initialization
0xAB: Long calibration
OP<7:0>
Calibration Code
Write-only
0x56: Short calibration
0xC3: ZQ Reset
All others: Reserved
Notes:
1. Host processor shall not write MR10 with “Reserved” values.
2. LPDDR2 devices shall ignore calibration command, when a “Reserved” values is written into MR10.
3. See AC timing table for the calibration latency.
4. If ZQ is connected to VSSCA through RZQ, either the ZQ calibration function (see “MRW ZQ Calibration Command”) or
default
calibration (through the ZQ RESET command) is supported. If ZQ is connected to VDDCA, the device opeates with default
calibration,
and ZQ calibration commands are ignored. In both cases, the ZQ connection must not change after power is supplied to the
device.
5. Devices that do not support calibration ignore the ZQ calibration command.
MR11:15_(Reserved) (MA<7:0> = 0BH- 0FH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
RFU
20
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MR16_PASR_Bank Mask (MA<7:0> = 010H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Bank Mask (4-Bank or 8-Bank)
OP<7:0>
Bank Mask Code
Write-only
0B: refresh enable to the bank (=unmasked, default)
1B: refresh blocked (=masked)
OP
Bank Mask
4 Bank
8 Bank
0
XXXXXXX1
Bank 0
Bank 0
1
XXXXXX1X
Bank 1
Bank 1
2
XXXXX1XX
Bank 2
Bank 2
3
XXXX1XXX
Bank 3
Bank 3
4
XXX1XXXX
-
Bank 4
5
XX1XXXXX
-
Bank 5
6
X1XXXXXX
-
Bank 6
7
1XXXXXXX
-
Bank 7
Note: For 4-bank S4 SDRAM, only OP<3:0> are used.
MR17_PASR_Segment Mask (MA<7:0> = 011H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Segment Mask
OP<7:0>
Segment Mask Code
Write-only
0B: refresh enable to the bank (=unmasked, default)
1B: refresh blocked (=masked)
1Gb
2Gb, 4Gb
8Gb
R12:10
R13:11
R14:12
Segment
OP
Bank Mask
0
0
XXXXXXX1
000B
1
1
XXXXXX1X
001B
2
2
XXXXX1XX
010B
3
3
XXXX1XXX
011B
4
4
XXX1XXXX
100B
5
5
XX1XXXXX
101B
6
6
X1XXXXXX
110B
7
7
1XXXXXXX
111B
Note: This table indicates the range of row addresses in each masked segment. X is don’t care for a particular segment.
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MR18:19_(Reserved) (MA<7:0> = 012H- 013H):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
RFU
MR20:31_(Do Not Use) (MA<7:0> = 014H- 01FH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP2
OP1
OP0
OP2
OP1
OP0
OP2
OP1
OP0
Do Not Use
MR32_(Do Not Use) (MA<7:0> = 020H):
OP7
OP6
OP5
OP4
OP3
Do Not Use
MR33:39_(Do Not Use) (MA<7:0> = 021H- 027H):
OP7
OP6
OP5
OP4
OP3
Do Not Use
MR40_(Do Not Use) (MA<7:0> = 028H):
OP7
OP6
OP5
OP4
OP3
Do Not Use
MR41:47_(Do Not Use) (MA<7:0> = 029H- 02FH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Do Not Use
22
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MR48:62_(Reserved) (MA<7:0> = 030H- 03EH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP1
OP0
RFU
MR63_Reset (MA<7:0> = 03FH): MRW only
OP7
OP6
OP5
OP4
OP3
OP2
X
Note: For additional information on MRW RESET, see “Mode Register Write Command” on Timing Spec.
MR64:126_(Reserved) (MA<7:0> = 040H- 07EH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP2
OP1
OP0
RFU
MR127_(Do Not Use) (MA<7:0> = 07FH):
OP7
OP6
OP5
OP4
OP3
Do Not Use
MR128:190_(Reserved for Vendor Use) (MA<7:0> = 080H- 0BEH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP1
OP0
RFU
MR191_(Do Not Use) (MA<7:0> = 0BFH):
OP7
OP6
OP5
OP4
OP3
OP2
Do Not Use
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MR192:254_(Reserved for Vendor Use) (MA<7:0> = 0C0H- 0FEH):
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
OP1
OP0
RFU
MR255_(Do Not Use) (MA<7:0> = 0FFH):
OP7
OP6
OP5
OP4
OP3
OP2
Do Not Use
24
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Truth Tables
Truth tables provide complementary information to the state diagram. They also clarify device
behavior and applicable restrictions when considering the actual state of the banks.
Unspecified operations and timings are illegal. To ensure proper operation after an illegal event,
the device must be powered down and then restarted using the specified initialization sequence
before normal operation can continue.
Command Truth Table
Table 49: Command Truth Table
Notes 1–11 apply to all parameters conditions
Command Pins
CA Pins
CKE
Command
CK( n -1)
CK( n )
CS#
CA0
CA1
CA2
CA3
CA4
CA5
CA6
CA7
CA8
CA9
H
H
L
L
L
L
L
MA0
MA1
MA2
MA3
MA4
MA5
H
H
X
MA6
MA7
OP0
OP1
OP2
OP3
OP4
OP5
OP6
OP7
H
H
L
L
L
L
H
MA0
MA1
MA2
MA3
MA4
MA5
H
H
X
REFRESH
(per bank)
H
H
L
H
H
X
REFRESH
(all banks)
H
H
L
H
H
X
Enter self
refresh
H
L
L
X
L
X
ACTIVATE
(bank)
H
H
L
L
H
R8
R9
R10
R11
R12
BA0
BA1
BA2
H
H
X
R0
R1
R2
R3
R4
R5
R6
R7
R13
R14
WRITE (bank)
H
H
L
H
L
L
RFU
RFU
C1
C2
BA0
BA1
BA2
H
H
X
AP
C3
C4
C5
C6
C7
C8
C9
C10
C11
H
H
L
H
L
H
RFU
RFU
C1
C2
BA0
BA1
BA2
H
H
X
AP
C3
C4
C5
C6
C7
C8
C9
C10
C11
PRECHARGE
(bank)
H
H
L
H
H
L
H
AB
X
X
BA0
BA1
BA2
H
H
X
BST
H
H
L
H
H
X
H
L
L
X
L
X
H
H
L
H
H
X
L
L
L
L
L
X
MRW
MRR
READ (bank)
Enter DPD
NOP
Maintain PD,
SREF, DPD,
(NOP)
MA6
L
MA7
L
X
H
L
X
X
L
L
H
H
X
X
L
L
H
X
X
X
H
H
L
L
X
X
H
H
L
X
X
H
H
H
X
X
H
H
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CK
Edge
H
X
X
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Command Pins
CA Pins
CKE
Command
CK( n -1)
CK( n )
CS#
H
H
H
X
H
H
X
X
Maintain PD,
SREF, DPD,
(NOP)
L
L
H
X
L
L
X
X
Enter powerdown
H
L
H
X
X
L
X
X
Exit PD, SREF,
DPD
L
H
H
X
X
H
X
X
NOP
CA0
CA1
CA2
CA3
CA4
CA5
CA6
CA7
CA8
CA9
CK
Edge
Note:
1. All commands are defined by the current state of CS#, CA0, CA1, CA2, CA3, and CKE at
the rising edge of the clock.
2. Bank addresses (BA) determine which bank will be operated upon.
3.AP HIGH during a READ or WRITE command indicates that an auto precharge will occur
to the bank associated with the READ or WRITE command.
4. X indicates a “Don’t Care” state, with a defined logic level, either HIGH (H) or LOW (L).
5. Self refresh exit and DPD exit are asynchronous.
6. VREF must be between 0 and VDDQ during self refresh and DPD operation.
7. CAxr refers to command/address bit “x” on the rising edge of clock.
8. CAxf refers to command/address bit “x” on the falling edge of clock.
9. CS# and CKE are sampled on the rising edge of the clock.
10. Per-bank refresh is only supported in devices with eight banks.
11. The least-significant column address C0 is not transmitted on the CA bus, and is inferred
to be zero
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CKE Truth Table
Device
Current State
*3
CKEn-1*1 CKEn*1
Command n*4
Operation n*4
Device Next State
x
x
Maintain Active Power Down
Active Power Down
Exit Active Power Down
Active
Maintain Idle Power Down
Idle Power Down
Exit Idle Power Down
Idle
2
Active
Power Down
L
L
H
H
NOP
Idle
Power Down
L
L
x
x
L
H
H
NOP
Resetting
Power Down
L
L
x
x
L
H
H
NOP
Exit Resetting Power Down
Idle or Resetting
Deep
Power Down
L
L
x
x
Maintain Deep Power Down
Deep Power Down
L
H
H
NOP
Exit Deep Power Down
Power On
L
L
x
x
Maintain Self Refresh
Self Refresh
Exit Self Refresh
Idle
Self Refresh
L
CS_n*
L
H
H
H
L
H
NOP
Enter Active Power Down
Active Power Down
H
L
H
NOP
Enter Idle Power Down
Idle Power Down
H
L
L
Enter
Self-Refresh
Enter Self Refresh
Self Refresh
H
L
L
Enter
Self-Refresh
Enter Deep Power Down
Deep Power Down
Resetting
H
L
H
NOP
Enter Resetting Power Down
Resetting Power Down
Other states
H
H
All Banks Idle
6,9
6,9
Maintain Resertting Power Down Resetting Power Down
NOP
Bank(s) Active
Notes
6,9,12
8
7,10
Refer to the Command Truth Table
Notes:
1.“CKEn” is the logic state of CKE at clock edge n; “CKEn-1” was the logic state of CKE at previous clock edge.
2. “CS_n” is the logic state of CS_n at the clock rising edge n;
3. “Current state” is the state of the LPDDR2 device immediately prior to clock edge n.
4. “Command n” is the command registered at clock edge N, and “Operation n” is a result of “Command n”.
5. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
6. Power Down exit time (tXP) should elapse before a command other than NOP is issued.
7. Self-Refresh exit time (tXSR) should elapse before a command other than NOP is issued.
8. The Deep Power- Down exit procedure must be followed as discussed in the DPD section of the Functional Description.
9. The clock must toggle at least once during the tXP period.
10. The clock must toggle at least once during the tXSR period.
11. “x” means “Don’t care”.
12. Upon exiting Resetting Power Down, the device will return to the idle state if tINIT5 has expired.
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Current State Bank n – Command to Bank n
Current State Bank n – Command to Bank n Truth Table
Current State
Any
Command
NOP
ACTIVATE
Idle
Row Active
Writing
Next State
Continue previous operation
Select and activate row
Notes
Current State
Active
Refresh (Per Bank)
Begin to refresh
Refreshing (Per Bank)
6
Refresh (All Bank)
Begin to refresh
Refreshing (AllBank)
7
7
MRW
Load value from Mode Register
MR Writing
MRR
Read value from Mode Register
Idle / MR Reading
Reset
Begin Device Auto-initialization
Resetting
7,8
Precharge
Deactivate row in bank or banks
Precharging
9,15
Read
Select column, and start read burst
Reading
Write
Select column, and start write burst
Writing
MRR
Read value from Mode Register
Active / MR Reading
Deactivate row in bank or banks
Precharge
Reading
Operation
Precharging
9
Read
Select column, and start new read burst
Reading
10,11
Write
Select column, and start write burst
Writing
10,11,12
BST
Read burst terminate
Active
13
Write
Select column, and start new write burst
Writing
10,11
Read
Select column, and start read burst
Reading
10,11,14
BST
Write burst terminate
Active
13
7,9
Power On
Reset
Begin Device Auto-initialization
Resetting
Resetting
MRR
Read value from Mode Register
Resetting MR Reading
Notes:
1. Values in this table apply when both CKEn -1 and CKEn are HIGH, and after tXSR or tXP has been met, if the previous state
was power-down.
2. All states and sequences not shown are illegal or reserved.
3. Current state definitions:
Idle: The bank or banks have been precharged, and tRP has been met.
Active: A row in the bank has been activated, and tRCD has been met. No data bursts or accesses and no register acesses are in
progress.
Reading: A READ burst has been initiated with auto precharge disabled and has not yet terminated or been terminated.
Writing: A WRITE burst has been initiated with auto precharge disabled and has not yet terminated or been terminated.
4. The states listed below must not be interrupted by a command issued to the same bank.
NOP commands or supported commands to the other bank must be issued on any clock edge occurring during these states. Supported commands to the other banks are determined by that bank’s current state, and the definitions given in Current State Bank
n to Command to Bank m Truth Table.
Precharge: Starts with registration of a PRECHARGE command and ends when tRP is met. After tRP is met, the bank is in the
idle state.
Row activate: Starts with registration of an ACTIVATE command and ends when tRCD is met. After tRCD is met, the bank is in
the active state.
READ with AP enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP is met.
After tRP is met, the bank is in the idle state.
WRITE with AP enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP is met.
After tRP is met, the bank is in the idle state.
5. The states listed below must not be interrupted by any executable command. NOP commands must be applied to each rising
clock edge during these states.
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Refresh (per bank): Starts with registration of a REFRESH (per bank) command and ends when tRFCpb is met. After tRFCpb is
met, the bank is in the idle state.
Refresh (all banks): Starts with registration of a REFRESH (all banks) command and ends when tRFCab is met. After tRFCab is
met,
the device is in the all banks idle state.
Idle MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the device is in
the all
banks idle state.
Resetting MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the device
is in
the all banks idle state.
Active MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the bank is in
the active state.
MR writing: Starts with registration of the MRW command and ends when tMRW is met. After tMRW is met, the device is in the all
banks idle state.
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when
tRP is met. After tRP is met, the device is in the all banks idle state.
6. Bank-specific; requires that the bank is idle and no bursts are in progress.
7. Not bank-specific; requires that all banks are idle and no bursts are in progress.
8. Not bank-specific.
9. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for precharging.
10. If a PRECHARGE command is issued to a bank in the idle state, tRP still applies.
11. A command other than NOP should not be issued to the same bank while a burst READ or burst WRITE with auto precharge
is enabled.
12. The new READ or WRITE command could be auto precharge enabled or auto precharge disabled.
13. A WRITE command can be issued after the completion of the READ burst; otherwise, a BST must be issued to end the
READ prior to asserting a WRITE command.
14. Not bank-specific. The BST command affects the most recent READ/WRITE burst started by the most recent READ/WRITE
command, regardless of bank.
15. A READ command can be issued after completion of the WRITE burst; otherwise, a BST must be used to end the WRITE
prior to asserting another READ command.
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Current State Bank n to Command to Bank m Truth Table
Current State
of Bank n
Current State
Any
of Bank n
Idle
Row activating,
active, or precharging
Command to Bank
m
NOP
Command to Bank
Any
ACTIVATE
m
Notes
7
8
WRITE
Select column and start WRITE burst to
bank m
Writing
9
Deactivate row(s) in bank or banks
Precharging
MRR
READ value from mode register
BST
READ or WRITE burst terminates an ongoing READ/WRITE from/to bank
m
Idle MR reading or active
MR reading
10
11, 12, 13
Active
7
READ
Select column and start READ burst
from bank m
Reading
9
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 14
Select and activate row in bank
m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
READ
Select column and start READ burst
from bank m
Reading
9, 15
WRITE
Select column and start WRITE burst to
bank m
Writing
9
Select and activate row in bank
m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
READ
Select column and start READ burst
from bank m
Reading
9, 16
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 14, 16
Select and activate row in bank
m
Active
PRECHARGE
Deactivate row(s) in bank or banks
Precharging
10
READ
Select column and start READ burst
from bank m
Reading
9, 15, 16
WRITE
Select column and start WRITE burst to
bank m
Writing
9, 16
ACTIVATE
Select and activate row in bank
PRECHARGE
Deactivate row(s) in bank or banks
Power-on
MRW RESET
Begin device auto initialization
Resetting
MRR
Read value from mode register
30
m
m
9
ACTIVATE
Writing with
auto precharge
Current state of bank
Next State for Bank
–
Active
Notes
Reading
ACTIVATE
Reading with
auto precharge
m
Select column and start READ burst
from bank m
ACTIVATE
Writing
(auto precharge
disabled)
Continue previous operation
Operation
Any command supported to bank
m
Select and activate row in bank
m
Next State for Bank
READ
PRECHARGE
Reading
(auto precharge
disabled)
Operation
m
Active
Precharging
10
Resetting
17, 18
Resetting MR reading
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Notes:
1.
This table applies when: the previous state was self refresh or power-down; after tXSR z or tXP has been met; and both
CKEn -1 and CKEn are HIGH.
2.
All states and sequences not shown are illegal or reserved.
3.
Current state definitions:
Idle: The bank has been precharged and tRP has been met.
Active: A row in the bank has been activated, tRCD has been met, no data bursts or accesses and no register accesses are in
progress.
Read: A READ burst has been initiated with auto precharge disabled and the READ has not yet terminated or been terminated.
Write: A WRITE burst has been initiated with auto precharge disabled and the WRITE has not yet terminated or been terminated.
4.
Refresh, self refresh, and MRW commands can only be issued when all banks are idle.
5.
A BST command cannot be issued to another bank; it applies only to the bank represented by the current state.
6.
The states listed below must not be interrupted by any executable command. NOP commands must be applied during
each clock cycle while in these states:
Idle MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the device is
in the all banks idle state.
Reset MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the device
is in the all banks idle state.
Active MRR: Starts with registration of the MRR command and ends when tMRR has been met. After tMRR is met, the bank is
in the active state.
MRW: Starts with registration of the MRW command and ends when tMRW has been met. After tMRW is met, the device is in
the all banks idle state.
7.
BST is supported only if a READ or WRITE burst is ongoing.
8.
tRRD must be met between the ACTIVATE command to bank n and any subsequent ACTIVATE command to bank m.
9.
READs or WRITEs listed in the command column include READs and WRITEs with or without auto precharge enabled.
10. This command may or may not be bank-specific. If all banks are being precharged, they must be in a valid state for precharging.
11. MRR is supported in the row-activating state.
12. MRR is supported in the precharging state.
13. The next state for bank m depends on the current state of bank m (idle, row-activating,precharging, or active).
14. A WRITE command can be issued after the completion of the READ burst; otherwise a BST must be issued to end the
READ prior to asserting a WRITE command.
15. A READ command can be issued after the completion of the WRITE burst; otherwise, a BST must be issued to end the
WRITE prior to asserting another READ command.
16. A READ with auto precharge enabled or a WRITE with auto precharge enabled can be followed by any valid command
to other banks provided that the timing restrictions in the PRECHARGE and Auto Precharge Clarification table are met.
17. Not bank-specific; requires that all banks are idle and no bursts are in progress.
18. RESET command is achieved through MODE REGISTER WRITE command
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DM
Operation Truth
Truth Table
DM Operation
Table
Function
DM
DQ
Notes
Write Enable
L
Valid
1
Write Inhibit
H
X
1
Note: Used to mask write data, and is provided simultaneously with the corresponding input data.
Command
Activate
The ACTIVATE command is issued by holding CS# LOW, CA0 LOW, and CA1 HIGH at the rising
edge of the clock. The bank addresses BA[1:0] are used to select the desired bank.
Row addresses are used to determine which row to activate in the selected bank. The ACTIVATE
command must be applied before any READ or WRITE operation can be executed.
The device can accept a READ or WRITE command at tRCD after the ACTIVATE command is
issued. After a bank has been activated, it must be precharged before another ACTIVATE command can be applied to the same bank. The bank active and precharge times are defined as tRAS
and tRP, respectively. The minimum time interval between successive ACTIVATE commands to
the same bank is determined by the RAS cycle time of the device (tRC). The minimum time interval
between ACTIVATE commands to different banks is tRRD.
ACTIVATE Command
t
t
t
Activate command cycle: RCD=3, RP=3, RRD=2
Notes:
1. tRCD = 3, tRP = 3, tRRD = 2.
2. A PRECHARGE ALL command uses tRPab timing, and a single-bank PRECHARGE command uses tRPpb timing. In
this figure, tRP is used to denote either an all-bank PRECHARGE or a single-bank PRECHARGE
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Certain restriction on operation of 8 bank devices must be observed, One rule restricts the number
of sequential ACTIVATE commands that can be issued; the second provides additional RAS precharge time for a PRECHARGE ALL command.
• The 8-Bank Device Sequential Bank Activation Restriction:No more than four banks can be activated (or refreshed, in the case of REFpb) in a rolling tFAW window. To convert to clocks, divide
tFAW[ns] by tCK[ns], and round up to the next integer value. For example, if RU(tFAW/tCK) is 10
clocks, and an ACTIVATE command is issued in clock n, no more than three further ACTIVATE
commands can be issued at or between clock n + 1 and n + 9. REFpb also counts as bank activation for purposes of tFAW.
• The 8-Bank Device PRECHARGE ALL Provision: tRP for a PRECHARGE ALL command must
equal tRPab, which is greater than tRPpb
tFAW Timing (8-Bank Devices)
t
FAW timing
Note: Exclusively for 8-bank devices.
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Read and Write Access Modes
After a bank is activated, a READ or WRITE command can be issued with CS# LOW, CA0 HIGH,
and CA1 LOW at the rising edge of the clock. CA2 must also be defined at this time to determine
whether the access cycle is a READ operation (CA2 HIGH) or a WRITE operation (CA2 LOW).
The LPDDR2 provide a fast column access operation .A single READ or WRITE command initiates
a burst READ or burst WRITE operation on successive clock cycles.
For LPDDR2 –S4 devices, a new burst access must not interrupt the previous 4-bit burst operation
when BL = 4.
In case of BL = 8 or BL = 16, READs can be interrupted by READs and WRITEs can be interrupted
by WRITEs, provided that the interrupt occurs on a 4-bit boundary and that tCCD is met.
Burst READ
The burst READ command is initiated with CS# LOW, CA0 HIGH, CA1 LOW, and CA2 HIGH at the
rising edge of the clock. The command address bus inputs, CA5r–CA6r and CA1f–CA9f, determine
the starting column address for the burst. The read latency (RL) is defined from the rising edge of
the clock on which the READ command is issued to the rising edge of the clock from which the
tDQSCK delay is measured. The first valid data is available RL × tCK + tDQSCK + tDQSQ after the
rising edge of the clock when the READ command is issued. The data strobe output is driven LOW
tRPRE before the first valid rising strobe edge. The first bit of the burst is synchronized with the first
rising edge of the data strobe. Each subsequent data-out appears on each DQ pin, edge aligned
with the data strobe. The RL is programmed in the mode registers.
Pin input timings for the data strobe are measured relative to the crosspoint of DQS and its complement, DQS#.
Data Output (Read) Timing – tDQSCK (MAX)
t
Data output (Read) timing ( DQSCKmax)
Notes:
1. tDQSCK can span multiple clock periods.
2. An effective burst length of 4 is shown
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Data Output (Read) Timing– tDQSCK (MIN)
Data output (Read) timing (tDQSCKmin), BL=4
Note: An effective BL=4 is shown.
Burst READ – RL = 5, BL = 4, tDQSCK > tCK
Burst Read: RL=5, BL=4, tDQSCK > tCK
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Burst READ – RL = 3, BL = 8, tDQSCK < tCK
t
t
Burst Read: RL=3, BL=8, DQSCK < CK
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tDQSCKDL Timing
Notes:
1. tDQSCKDL = (tDQSCKn - tDQSCKm).
2. tDQSCKDL (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm)
pair within any 32ms rolling window.
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tDQSCKDM Timing
t
DQSCKDM timing
Notes:
1. tDQSCKDM = (tDQSCKn - tDQSCKm).
2. tDQSCKDM (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm)
pair within any 1.6μs rolling window.
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DQSCKDS
timing
tDQSCKDS
t
Timing
Notes:
1. tDQSCKDS = (tDQSCKn - tDQSCKm).
2. tDQSCKDS (MAX) is defined as the maximum of ABS (tDQSCKn - tDQSCKm) for any (tDQSCKn, tDQSCKm) pair for
READs within a consecutive burst, within any 160ns rolling window.
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Burst READ Followed by Burst WRITE – RL = 3, WL = 1, BL = 4
The minimum time from the burst READ command to the burst WRITE command is defined
by the read latency (RL) and the burst length (BL). Minimum READ-to-WRITE latency is RL +
RU(tDQSCK(MAX)/tCK) + BL/2 + 1 - WL clock cycles. Note that if a READ burst is truncated
with a burst TERMINATE (BST) command, the effective burst length of the truncated READ burst
should be used for BL when calculating the minimum READ-to-WRITE delay.
Seamless Burst READ – RL = 3, BL = 4, tCCD = 2
A seamless burst READ operation is supported by enabling a READ command at every other
clock cycle for BL = 4 operation, every fourth clock cycle for BL = 8 operation, and every eighth
clock cycle for BL = 16 operation. This operation is supported as long as the banks are activated,
whether the accesses read the same or different banks.
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READs Interrupted by a READ
For LP-DDR2-S4 devices, burst READ can be interrupted by another READ with a 4-bit burst
boundary, provided that tCCD is met.
A burst READ can be interrupted by other READs on any subsequent clock, provided that tCCD is
met.
READ Burst Interrupt Example – RL = 3, BL = 8, tCCD = 2
Note: READs can only be interrupted by other READs or the BST command.
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Burst WRITE
The burst WRITE command is initiated with CS# LOW, CA0 HIGH, CA1 LOW, and CA2 LOW at
the rising edge of the clock. The command address bus inputs, CA5r–CA6r and CA1f–CA9f, determine the starting column address for the burst. Write latency (WL) is defined from the rising edge
of the clock on which the WRITE command is issued to the rising edge of the clock from which the
tDQSS delay is measured. The first valid data must be driven WL × tCK + tDQSS from the rising
edge of the clock from which the WRITE command is issued. The data strobe signal (DQS) must
be driven LOW tWPRE prior to data input. The burst cycle data bits must be applied to the DQ pins
tDS prior to
the associated edge of the DQS and held valid until tDH after that edge. Burst data is sampled on
successive edges of the DQS until the 4-, 8-, or 16-bit burst length is completed.
After a burst WRITE operation, tWR must be satisfied before a PRECHARGE command to the
same bank can be issued.
Pin input timings are measured relative to the crosspoint of DQS and its complement, DQS#.
Data Input (WRITE) Timing
Data input (Write) timing
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Burst WRITE – WL = 1, BL = 4
NT6TL64M32AQ
Burst
Burst WRITE Followed by Burst READ
– write:
RL =WL=1,
3, WLBL=4
= 1, BL = 4
Burst write followed by burst read: RL=3, WL=1, BL=4
Notes:
1. The minimum number of clock cycles from the burst WRITE command to the burst READ command for any bank is
[WL + 1 + BL/2 + RU(tWTR/tCK)].
2. tWTR starts at the rising edge of the clock after the last valid input data.
3. If a WRITE burst is truncated with a BST command, the effective burst length of the truncated WRITE burst should
be used as BL to calculate the minimum WRITE-to-READ delay.
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Seamless Burst WRITE – WL = 1, BL = 4, tCCD = 2
Note: The seamless burst WRITE operation is supported by enabling a WRITE command every other clock for BL = 4 operation,
every four clocks for BL = 8 operation, or every eight clocks for BL = 16 operation. This operation is supported for any activated
bank.
WRITEs Interrupted by a WRITE
For LPDDR2-S4 devices, a burst WRITE can only be interrupted by another WRITE with a 4-bit
burst boundary, provided that tCCD (MIN) is met.
A WRITE burst interrupt can occur on any clock after the initial WRITE command, provided that
tCCD (MIN) is met.
WRITE Burst Interrupt Timing – WL = 1, BL = 8, tCCD = 2
Notes:
1. WRITEs can only be interrupted by other WRITEs or the BST command.
2. The effective burst length of the first WRITE equals two times the number of clock cycles between the first WRITE
and the interrupting WRITE
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BURST TERMINATE (BST)
The BURST TERMINATE (BST) command is initiated with CS# LOW, CA0 HIGH, CA1 HIGH, CA2
LOW, and CA3 LOW at the rising edge of the clock. A BST command can only be issued to terminate an active READ or WRITE burst. Therefore, a BST command can only be issued up to and
including BL/2 - 1 clock cycles after a READ or WRITE command.
The effective burst length of a READ or WRITE command truncated by a BST command is as follows:
• Effective burst length = 2 × (number of clock cycles from the READ or WRITE command to the
BST command).
• If a READ or WRITE burst is truncated with a BST command, the effective burst length of the
truncated burst should be used for BL when calculating the minimum READ to-WRITE or WRITEto-READ delay.
• The BST command only affects the most recent READ or WRITE command. The BST command
truncates an ongoing READ burst RL × tCK + tDQSCK + tDQSQ after the rising edge of the clock
where the BST command is issued. The BST command truncates an ongoing WRITE burst WL ×
tCK + tDQSS after the rising edge of the clock where the BST command is issued.
• The 4-bit prefetch architecture enables BST command assertion on even clock cycles following a
WRITE or READ command. The effective burst length of a READ or WRITE command truncated by
a BST command is thus an integer multiple of four.
Burst WRITE Truncated by BST – WL = 1, BL = 16
Burst Write truncated by BST: WL=1, BL=16
Notes:
1. The BST command truncates an ongoing WRITE burst WL × tCK + tDQSS after the rising edge of the clock
where the BST command is issued.
2. BST can only be issued an even number of clock cycles after the WRITE command.
3. Additional BST commands are not supported after T4 and must not be issued until after the next READ or
WRITE command.
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Burst READ Truncated by BST – RL = 3, BL = 16
Notes:
1. The BST command truncates an ongoing READ burst (RL × tCK + tDQSCK + tDQSQ) after the rising edge of the clock where
the BST command is issued.
2. BST can only be issued an even number of clock cycles after the READ command.
3. Additional BST commands are not supported after T4 and must not be issued until after the next READ or WRITE command
Write Data Mask
On LPDDR2 devices, one write data mask (DM) pin for each data byte (DQ) is supported, consistent with the implementation on LPDDR SDRAM. Each DM can mask its respective DQ for any
given cycle of the burst. Data mask timings match data bit timing,
but are inputs only. Internal data mask loading is identical to data bit loading to ensure matched
system timing.
Data Mask Timing
Data Mask Timing
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Write Data Mask – Second Data Bit Masked
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PRECHARGE
The PRECHARGE command is used to precharge or close a bank that has been activated.
The PRECHARGE command is initiated with CS# LOW, CA0 HIGH, CA1 HIGH, CA2 LOW, and
CA3 HIGH at the rising edge of the clock. The PRECHARGE command can be used to precharge
each bank independently or all banks simultaneously.
For 4-bank devices, the AB flag and bank address bits BA0 and BA1 are used to determine which
bank(s) to precharge. For 8-bank devices, the AB flag and the bank address bits BA0, BA1, and
BA2 are used to determine which bank(s) to precharge. The precharged bank(s) will be available
for subsequent row access tRPab after an all bank PRECHARGE command is issued, or tRPpb
after a single-bank PRECHARGE command is issued.
In order to ensure that 8-bank devices can meet the instantaneous current demand required to
operate, the row precharge time (tRP) for an all bank PRECHARGE in 8-bank devices (tRPab) will
be longer than the row precharge time for a single-bank PRECHARGE (tRPpb).
For 4-bank devices, tRPab is equal to tRPpb.
Bank Selection for PRECHARGE by Address Bits
AB (CA4r)
BA2 (CA9r)
BA1 (CA8r)
BA0 (CA7r)
0
0
0
0
0
0
0
0
1
0
0
0
0
1
1
1
1
Don't care
0
0
1
1
0
0
1
1
Don't care
0
1
0
1
0
1
0
1
Don't care
Precharged Bank(s) Precharged Bank(s)
4-bank device
8-bank device
Bank 0 only
Bank 1 only
Bank 2 only
Bank 3 only
Bank 0 only
Bank 1 only
Bank 2 only
Bank 3 only
All Banks
Bank 0 only
Bank 1 only
Bank 2 only
Bank 3 only
Bank 4 only
Bank 5 only
Bank 6 only
Bank 7 only
All Banks
Bank selection for Precharge by address bits
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READ Burst operation Followed by PRECHARGE
For the earliest possible precharge, the PRECHARGE command can be issued BL/2 clock cycles
after a READ command. A new bank ACTIVATE command can be issued to the same bank after
the row precharge time (tRP) has elapsed. A PRECHARGE command
cannot be issued until after tRAS is satisfied.
The minimum READ-to-PRECHARGE time (tRTP) must also satisfy a minimum analog time from
the rising clock edge that initiates the last 4-bit prefetch of a READ command. tRTP begins BL/2 2 clock cycles after the READ command.
If the burst is truncated by a BST command, the effective BL value is used to calculate when tRTP
begins.
READ Burst Followed by PRECHARGE – RL = 3, BL = 8, RU(tRTP(MIN)/tCK) = 2
t
t
Burst Read followed by Precharge: RL=3, BL=8, RU( RTP(min)/ CK)=2
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READ Burst Followed by PRECHARGE – RL = 3, BL = 4, RU(tRTP(MIN)/tCK) = 3
Burst Read followed by Precharge: RL=3, BL=4, RU( tRTP(min)/tCK) = 3
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WRITE Burst operation Followed by PRECHARGE
For WRITE cycles, a WRITE recovery time ( tWR) must be provided before a PRECHARGE command can be issued. This delay is referenced from the last valid burst input data to the completion
of the burst WRITE. The PRECHARGE command must not be issued prior to the tWR delay.
These devices write data to the array in prefetch quadruples (prefetch = 4). An internal WRITE
operation can only begin after a prefetch group has been completely latched.
The minimum WRITE-to-PRECHARGE time for commands to the same bank is WL + BL/2 + 1 +
RU(tWR/tCK) clock cycles. For untruncated bursts, BL is the value set in the mode register. For
truncated bursts, BL is the effective burst length.
WRITE Burst Followed by PRECHARGE – WL = 1, BL = 4
Burst Write followed by Precharge: WL=1, BL=4
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Auto Precharge
Before a new row can be opened in an active bank, the active bank must be precharged using
either the PRECHARGE command or the auto precharge function. When a READ or WRITE command is issued to the device, the auto precharge bit (AP) can be set to enable the active bank to
automatically begin precharge at the earliest possible moment during the burst READ or WRITE
cycle.
If AP is LOW when the READ or WRITE command is issued, then normal READ or WRITE burst
operation is executed and the bank remains active at the completion of the burst.
If AP is HIGH when the READ or WRITE command is issued, the auto precharge function is engaged. This feature enables the PRECHARGE operation to be partially or completely hidden during burst READ cycles (dependent upon READ or WRITE latency), thus improving system performance for random data access.
READ Burst with Auto Precharge
If AP (CA0f) is HIGH when a READ command is issued, the READ with auto precharge function is
engaged.
These devices start an auto precharge on the rising edge of the clock BL/2 or BL/2 - 2 + RU(tRTP/
tCK) clock cycles later than the READ with auto precharge command, whichever is greater. For
auto precharge calculations see following table.
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LPDDR2-S4: PRECHARGE and Auto Precharge Clarification
LPDDR2-S4: Precharge & Auto Precharge clarification
From
Command
To Command
Precharge (to same Bank as Read)
Precharge All
Precharge
(to same Bank as Read)
BST
(for Reads)
Precharge All
Precharge (to same Bank as Read w/AP)
Precharge All
Read
Minimum Delay between "From Command" to
Note
Unit
"To Command"
s
BL/2 + max(2, RU(tRTP/tCK)) - 2
BL/2 + max(2, RU(tRTP/tCK)) - 2
1
1
BL/2 + max(2, RU(tRTP/tCK)) - 2
BL/2 + max(2, RU(tRTP/tCK)) - 2
BL/2 + max(2, RU( RTP/ CK)) - 2 +
Activate (to same Bank as Read w/AP)
RU(tRP /tCK)
Read w/AP
Write or Write w/AP (same bank)
illegal
t
Write or Write w/AP (different bank)
RL + BL/2 + RU( DQSCKmax/tCK) - WL + 1
Read or Read w/AP (same bank)
illegal
Read or Read w/AP (different bank)
BL/2
Precharge (to same Bank as Write)
WL + BL/2 + RU(tWR/tCK) + 1
Write
Precharge All
WL + BL/2 + RU(tWR/tCK) + 1
Precharge (to same Bank as Write)
BST
WL + RU(tWR/tCK) + 1
(for Writes)
Precharge All
WL + RU(tWR/tCK) + 1
Precharge (to same Bank as Write w/AP)
WL + BL/2 + RU(tWR/tCK) + 1
Precharge All
WL + BL/2 + RU(tWR/tCK) + 1
Activate (to same Bank as Write w/AP) WL + BL/2 + RU(tWR/tCK) + 1 + RU(tRPpb/tCK)
Write w/AP
Write or Write w/AP (same bank)
illegal
Write or Write w/AP (different bank)
BL/2
Read or Read w/AP (same bank)
illegal
Read or Read w/AP (different bank)
WL + BL/2 + RU(tWTR/tCK) + 1
Precharge (to same Bank as Precharge)
1
Precharge
Precharge All
1
Precharge
Precharge
1
All
Precharge All
1
clks
clks
clks
clks
clks
clks
1
1
1
1
1,2
1
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
clks
1
3
3
3
3
1
1
1
1
1
1
1
3
3
3
3
1
1
1
1
Notes:
1. For a given bank, the PRECHARGE period should be counted from the latest PRECHARGE command—either a one-bank
PRECHARGE or PRECHARGE ALL—issued to that bank.
The PRECHARGE period is satisfied after tRP, depending on the latest PRECHARGE command issued to that bank.
2. Any command issued during the specified minimum delay time is illegal.
3. After READ with auto precharge, seamless READ operations to different banks are supported.
After WRITE with auto precharge, seamless WRITE operations to different banks are supported. READ with auto precharge and
WRITE with auto precharge must not be interrupted or truncated.
Following an auto precharge operation, an ACTIVATE command can be issued to the same bank if the following two conditions
are satisfied simultaneously:
• The RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
• The RAS cycle time (tRC) from the previous bank activation has been satisfied.
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READ Burst with Auto Precharge – RL = 3, BL = 4, RU(tRTP(MIN)/tCK) = 2
-
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WRITE Burst operation Followed by PRECHARGE
For WRITE cycles, a WRITE recovery time ( tWR) must be provided before a PRECHARGE command can be issued. This delay is referenced from the last valid burst input data to the completion
of the burst WRITE. The PRECHARGE command must not be issued prior to the tWR delay.
These devices write data to the array in prefetch quadruples (prefetch = 4). An internal WRITE
operation can only begin after a prefetch group has been completely latched.
The minimum WRITE-to-PRECHARGE time for commands to the same bank is WL + BL/2 + 1 +
RU(tWR/tCK) clock cycles. For untruncated bursts, BL is the value set in the mode register. For
truncated bursts, BL is the effective burst length.
WRITE Burst Followed by PRECHARGE – WL = 1, BL = 4
CK#
CK
T0
T1
T2
T3
T4
T5
T6
T7
T8
BL/2
RL = 3
CA[9:0]
Bankm
Col addr a
col addr a
Bankm
row addr
≥ t RPpb
t RTP
CMD
READ w/AP
NOP
Row addr
NOP
NOP
NOP
ACTIVATE
NOP
NOP
NOP
DQS#
DQS
DQ
DOUT A0
DOUT A1
DOUT A2
DOUT A3
Transitioning data
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REFRESH
The REFRESH command is initiated with CS# LOW, CA0 LOW, CA1 LOW, and CA2 HIGH at the
rising edge of the clock. Per-bank REFRESH is initiated with CA3 LOW at the rising edge of the
clock. All-bank REFRESH is initiated with CA3 HIGH at the rising edge of
the clock. Per-bank REFRESH is only supported in devices with eight banks.
A per-bank REFRESH command (REFpb) performs a per-bank REFRESH operation to the bank
scheduled by the bank counter in the memory device. The bank sequence for per-bank REFRESH
is fixed to be a sequential round-robin: 0-1-2-3-4-5-6-7-0-1-.... The bank count is synchronized
between the controller and the SDRAM by resetting the bank count to zero. Synchronization can
occur upon issuing a RESET command or at every exit from self refresh. Bank addressing for the
per-bank REFRESH count is the same as established for the single-bank PRECHARGE command.
A bank must be idle before it can be refreshed. The controller must track the bank being refreshed
by the per-bank REFRESH command.
The REFpb command must not be issued to the device until the following conditions have been
met:
• tRFCab has been satisfied after the prior REFab command
• tRFCpb has been satisfied after the prior REFpb command
• tRP has been satisfied after the prior PRECHARGE command to that bank
• tRRD has been satisfied after the prior ACTIVATE command (if applicable, for example after activating a row in a different bank than the one affected by the REFpb command)
The target bank is inaccessible during per-bank REFRESH cycle time (tRFCpb), however, other
banks within the device are accessible and can be addressed during the cycle.
During the REFpb operation, any of the banks other than the one being refreshed can be maintained in an active state or accessed by a READ or WRITE command.
When the per-bank REFRESH cycle has completed, the affected bank will be in the idle state.
After issuing REFpb, the following conditions must be met:
• tRFCpb must be satisfied before issuing a REFab command
• tRFCpb must be satisfied before issuing an ACTIVATE command to the same bank
• tRRD must be satisfied before issuing an ACTIVATE command to a different bank
• tRFCpb must be satisfied before issuing another REFpb command
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An all-bank REFRESH command (REFab) issues a REFRESH command to all banks. All banks
must be idle when REFab is issued (for instance, by issuing a PRECHARGE ALL command prior
to issuing an all-bank REFRESH command). REFab also synchronizes the bank count between
the controller and the SDRAM to zero. The REFab command must not be issued to the device until
the following conditions have been met:
• tRFCab has been satisfied following the prior REFab command
• tRFCpb has been satisfied following the prior REFpb command
• tRP has been satisfied following the prior PRECHARGE commands
After an all-bank REFRESH cycle has completed, all banks will be idle. After issuing REFab:
• tRFCab latency must be satisfied before issuing an ACTIVATE command
• tRFCab latency must be satisfied before issuing a REFab or REFpb command
REFRESH Command Scheduling Separation Requirements
Command Scheduling Separations related to Refresh
Symbol
minimum delay from
to
Activate cmd to any bank .
REFpb
REFab
Activate cmd to same bank as REFpb
REFpb
Activate cmd to different bank than REFpb
REFpb affecting an idle bank (different bank than Activate)
t
RFCab
REFab
t
RFCpb
REFpb
REFpb
t
RRD
Activate
Notes
REFab
1
Activate cmd to different bank than prior Activate
Note: A bank must be in the idle state before it is refreshed, so REFab is prohibited following an ACTIVATE command. REFpb is
supported only if it affects a bank that is in the idle state.
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The LPDDR2 devices provide significant flexibility in scheduling REFRESH commands as long as
the required boundary conditions are met (see figure of tSRF Definition).
In the most straightforward implementations, a REFRESH command should be scheduled every
tREFI. In this case, self refresh can be entered at any time.
Users may choose to deviate from this regular refresh pattern, for instance, to enable a period in
which no refresh is required. As an example, using a 256Mb LPDDR2 device, the user can choose
to issue a refresh burst of 4096 REFRESH commands at the maximum supported rate (limited
by tREFBW), followed by an extended period without issuing any REFRESH commands, until the
refresh window is complete. The maximum supported time without REFRESH commands is calculated as follows: tREFW - (R/8) × tREFBW= tREFW - R × 4 × tRFCab.
For example, a 256Mb device at TC ≤ 85˚C can be operated without a refresh for up to 32ms 4096 × 4 × 90ns ≈ 30ms.
Both the regular and the burst/pause patterns can satisfy refresh requirements if they are repeated
in every 32ms window. It is critical to satisfy the refresh requirement in every rolling refresh window
during refresh pattern transitions. The supported transition from a burst pattern to a regular distributed pattern is shown in figure of Supported Transition from Repetitive REFRESH Burst .
If this transition occurs immediately after the burst refresh phase, all rolling tREFW intervals will
meet the minimum required number of REFRESH commands.
A nonsupported transition is shown in Figure of Nonsupported Transition from Repetitive REFRESH Burst . In this example, the regular refresh pattern starts after the completion of the pause
phase of the burst/pause refresh pattern. For several rolling tREFW intervals, the minimum number
of REFRESH commands is not satisfied.
Understanding this pattern transition is extremely important, even when only one pattern is employed. In self refresh mode, a regular distributed refresh pattern must be assumed.
ISSI recommends entering self refresh mode immediately following the burst phase of a burst/
pause refresh pattern; upon exiting self refresh, begin with the burst phase (see Figure of Recommended Self Refresh Entry and Exit ).
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Regular Distributed Refresh Pattern
Notes:
1. Compared to repetitive burst REFRESH with subsequent REFRESH pause.
2. As an example, in a 512Mb LPDDR2 device at TC ≤ 85˚C, the distributed refresh pattern has one REFRESH command per
7.8μs; the burst refresh pattern has one REFRESH command per 0.52μs, followed by ≈ 30ms without any REFRESH command.
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Supported Transition from Repetitive REFRESH Burst
Notes:
1. Shown with subsequent REFRESH pause to regular distributed refresh pattern.
2. As an example, in a 512Mb LPDDR2 device at TC ≤ 85˚C, the distributed refresh pattern has one REFRESH command per
7.8μs; the burst refresh pattern has one REFRESH command per 0.52μs, followed by ≈ 30ms without any REFRESH command
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Nonsupported Transition from Repetitive REFRESH Burst
Notes:
1. Shown with subsequent REFRESH pause to regular distributed refresh pattern.
2. There are only ≈ 2048 REFRESH commands in the indicated tREFW window. This does not provide the required minimum
number of REFRESH commands (R).
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Recommended Self Refresh Entry and Exit
Note: In conjunction with a burst/pause refresh pattern
REFRESH Requirements
1. Minimum Number of REFRESH Commands
Mobile LPDDR2 requires a minimum number, R, of REFRESH (REFab) commands within any rolling refresh window (tREFW = 32 ms @ MR4[2:0] = 011 or TC ≤ 85˚C). For actual values per density and the resulting average refresh interval (tREFI).
For tREFW and tREFI refresh multipliers at different MR4 settings, see the MR4 Device Temperature (MA[7:0] = 04h) table.
For devices supporting per-bank REFRESH, a REFab command can be replaced by a full cycle of
eight REFpb commands.
2. Burst REFRESH Limitation
To limit current consumption, a maximum of eight REFab commands can be issued in any rolling tREFBW (tREFBW = 4 × 8 × tRFCab). This condition does not apply if REFpb commands are
used.
3. REFRESH Requirements and Self Refresh
If any time within a refresh window is spent in self refresh mode, the number of required REFRESH
commands in that window is reduced to the following:
R’ = RU〔tSRF / tREFI〕= R - RU ×〔R x tSRF / tREFW〕
Where RU represents the round-up function.
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tSRF Definition
Notes:
1. Time in self refresh mode is fully enclosed in the refresh window (tREFW).
2. At self refresh entry.
3. At self refresh exit.
4. Several intervals in self refresh during one tREFW interval. In this example, tSRF = tSRF1 +tSRF2.
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All-Bank REFRESH Operation
Per-Bank REFRESH Operation
Notes:
1. Prior to T0, the REFpb bank counter points to bank 0.
2. Operations to banks other than the bank being refreshed are supported during the tRFCpb period
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SELF REFRESH Operation
The SELF REFRESH command can be used to retain data in the array, even if the rest of the
system is powered down. When in the self refresh mode, the device retains data without external
clocking. The device has a built-in timer to accommodate SELF REFRESH operation. The SELF
REFRESH command is executed by taking CKE LOW, CS# LOW, CA0 LOW, CA1 LOW, and CA2
HIGH at the rising edge of the clock.
CKE must be HIGH during the clock cycle preceding a SELF REFRESH command. A NOP command must be driven in the clock cycle following the SELF REFRESH command.
After the power-down command is registered, CKE must be held LOW to keep the device in self
refresh mode. LPDDR2-S4 devices can operate in self refresh mode in both the standard and extended temperature ranges. These devices also manage self refresh power consumption
when the operating temperature changes, resulting in the lowest possible power consumption
across the operating temperature range.
After the device has entered self refresh mode, all external signals other than CKE are“Don’t Care.”
For proper self refresh operation, power supply pins (VDD1, VDD2, VDDQ, and VDDCA) must
be at valid levels. VDDQ can be turned off during self refresh. If VDDQ is turned off, VREFDQ
must also be turned off. Prior to exiting self refresh, both VDDQ and VREFDQ must be within their
respective minimum/maximum operating ranges . VREFDQ can be at any level between 0 and
VDDQ; VREFCA can be at any level between 0 and VDDCA during self refresh.
Before exiting self refresh, VREFDQ and VREFCA must be within specified limits (see AC and DC
Logic Input Measurement Levels for Single-Ended Signals . After entering self refresh mode, the
device initiates at least one all-bank REFRESH command internally during tCKESR. The clock is
internally disabled during SELF REFRESH operation to save power. The device must remain in self
refresh mode for at least tCKESR. The user can change the external clock frequency or halt the
external clock one clock after self refresh entry is registered; however, the clock must be restarted
and stable before the device can exit SELF REFRESH operation.
Exiting self refresh requires a series of commands. First, the clock must be stable prior to CKE
returning HIGH. After the self refresh exit is registered, a minimum delay, at least equal to the self
refresh exit interval (tXSR), must be satisfied before a valid command can be issued to the device.
This provides completion time for any internal refresh in progress. For proper operation, CKE must
remain HIGH throughout tXSR, except during self refresh re-entry. NOP commands must be registered on each rising clock edge during tXSR.
Using self refresh mode introduces the possibility that an internally timed refresh event could be
missed when CKE is driven HIGH for exit from self refresh mode. Upon exiting self refresh, at least
one REFRESH command (one all-bank command or eight per-bank commands) must be issued
before issuing a subsequent SELF REFRESH command.
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SELF REFRESH Operation
Notes:
1. Input clock frequency can be changed or stopped during self refresh, provided that upon exiting self-refresh, a minimum of two
cycles of stable clocks (tINIT2) are provided, and the clock frequency is between the minimum and maximum
frequencies for the particular speed grade.
2. The device must be in the all banks idle state prior to entering self refresh mode.
3. tXSR begins at the rising edge of the clock after CKE is driven HIGH.
4. A valid command can be issued only after tXSR is satisfied. NOPs must be issued during tXSR.
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Partial-Array Self Refresh – Bank Masking
Devices in densities of 64Mb–512Mb are comprised of four banks; densities of 1Gb and higher are
comprised of eight banks. Each bank can be configured independently whether or not a SELF REFRESH operation will occur in that bank. One 8-bit mode register (accessible via the MRW command) is assigned to program the bank-masking status of each bank up to eight banks. For bank
masking bit assignments, see the MR16 PASR Bank Mask (MA[7:0] = 010h) and MR16 Op-Code
Bit Definitions tables.
The mask bit to the bank enables or disables a refresh operation of the entire memory space
within the bank. If a bank is masked using the bank mask register, a REFRESH operation to the
entire bank is blocked and bank data retention is not guaranteed in self refresh mode. To enable a
REFRESH operation to a bank, the corresponding bank mask bit must be programmed as “unmasked.” When a bank mask bit is unmasked, the array space being refreshed within that bank is
determined by the programmed status of the
segment mask bits.
Partial-Array Self Refresh – Segment Masking
Programming segment mask bits is similar to programming bank mask bits. For densities 1Gb
and higher, eight segments are used for masking (see the MR17 PASR Segment Mask (MA[7:0]
= 011h) and MR17 PASR Segment Mask Definitions tables). A mode register is used for programming segment mask bits up to eight bits. For densities less than 1Gb, segment masking is not
supported.
When the mask bit to an address range (represented as a segment) is programmed as“masked,”
a REFRESH operation to that segment is blocked. Conversely, when a segment mask bit to an address range is unmasked, refresh to that segment is enabled.
A segment masking scheme can be used in place of or in combination with a bank masking
scheme. Each segment mask bit setting is applied across all banks. For segment masking bit assignments, see the tables noted above.
Bank and Segment Masking Example
Segment Mask (MR17)
Bank Mask (MR16)
Bank 0
Bank 1
Bank 2
Bank 3
Bank 4
Bank 5
Bank 6
Bank 7
0
1
0
0
0
0
0
1
Segment 0
0
–
M
–
–
–
–
–
M
Segment 1
0
–
M
–
–
–
–
–
M
Segment 2
1
M
M
M
M
M
M
M
M
Segment 3
0
–
M
–
–
–
–
–
M
Segment 4
0
–
M
–
–
–
–
–
M
Segment 5
0
–
M
–
–
–
–
–
M
Segment 6
0
–
M
–
–
–
–
–
M
Segment 7
1
M
M
M
M
M
M
M
M
Note: This table provides values for an 8-bank device with REFRESH operations masked to banks 1 and 7, and segments 2 and 7.
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MODE REGISTER READ
The MODE REGISTER READ (MRR) command is used to read configuration and status data from
SDRAM mode registers. The MRR command is initiated with CS# LOW, CA0 LOW, CA1 LOW,
CA2 LOW, and CA3 HIGH at the rising edge of the clock. The mode register
is selected by CA1f–CA0f and CA9r–CA4r. The mode register contents are available on the first
data beat of DQ[7:0] after RL × tCK + tDQSCK + tDQSQ and following the rising edge of the clock
where MRR is issued. Subsequent data beats contain valid but undefined
content, except in the case of the DQ calibration function, where subsequent data beats contain
valid content as described in Data Calibration Pattern Description. All DQS are toggled for the
duration of the mode register READ burst. The MRR command has a burst length of four. MRR
operation (consisting of the MRR command and the corresponding data traffic) must not be interrupted. The MRR command period (tMRR) is two clock cycles.
MRR Timing – RL = 3, tMRR = 2
Notes:
1. MRRs to DQ calibration registers MR32 and MR40 are described in DQ Calibration .
2. Only the NOP command is supported during tMRR.
3. Mode register data is valid only on DQ[7:0] on the first beat. Subsequent beats contain valid but undefined data. DQ[MAX:8]
contain valid but undefined data for the duration of the MRR burst.
4. Minimum MRR to write latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 - WL clock cycles.
5. Minimum MRR to MRW latency is RL + RU(tDQSCKmax/tCK) + 4/2 + 1 clock cycles.
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READ bursts and WRITE bursts cannot be truncated by MRR. Following a READ command, the
MRR command must not be issued before BL/2 clock cycles have completed.
Following a WRITE command, the MRR command must not be issued before WL + 1 + BL/2 +
RU(tWTR/tCK) clock cycles have completed. If a READ or WRITE burst is truncated with a BST
command, the effective burst length of the truncated burst should be used for the BL value.
READ to MRR Timing – RL = 3, tMRR = 2
Notes:
1. The minimum number of clock cycles from the burst READ command to the MRR command is BL/2.
2. Only the NOP command is supported during tMRR.
Burst WRITE Followed by MRR – RL = 3, WL = 1, BL = 4
Notes:
1. The minimum number of clock cycles from the burst WRITE command to the MRR command is [WL + 1 + BL/2 + RU(tWTR/
tCK)].
2. Only the NOP command is supported during tMRR.
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Temperature Sensor
LPDDR2 devices feature a temperature sensor whose status can be read from MR4. This sensor can be used to determine an appropriate refresh rate, determine whether AC timing derating is
required in the extended temperature range, and/or monitor the operating temperature. Either the
temperature sensor or the device operating temperature can be used to determine whether operating temperature requirements
are being met (see Operating Temperature Range table). Temperature sensor data can be read
from MR4 using the mode register read protocol.
Upon exiting self-refresh or power-down, the device temperature status bits will be no older than
tTSI.
When using the temperature sensor, the actual device case temperature may be higher than the
operating temperature specification that applies for the standard or extended temperature ranges
(see table noted above). For example, TCASE could be above 85˚C when MR4[2:0] equals 011b.
To ensure proper operation using the temperature sensor, applications must accommodate the
parameters in the temperature sensor definitions table.
Temperature Sensor Definitions and Operating Conditions
Parameter
Symbol
Max/Min
System Temperature Gradient TempGradient
Max
MR4 Read Interval
Max
ReadInterval
Temperature Sensor Interval tTSI
Max
System Response Delay
SysRespDela
y
Max
Device Temperature Margin
TempMargin
Max
Value
Unit
Notes
Maximum temperature gradient
System Dependent C/s experienced by the memory device at the
temperature of interest over a range of 2°C.
Time period between MR4 READs from the
System Dependent ms
system.
Maximum delay between internal updates
16
ms
of MR4.
Maximum response time from an MR4
System Dependent ms
READ to the system response.
Margin above maximum temperature to
2
C
support controller response.
LPDDR2 devices accommodate the temperature margin between the point at which the device
temperature enters the extended temperature range and the point at which the controller reconfigures the system accordingly. To determine the required MR4 polling frequency, the system must
use the maximum TempGradient and the maximum response time of the system according to the
following equation:
TempGradient × (ReadInterval + tTSI + SysRespDelay) ≤ 2°C
For example, if TempGradient is 10˚C/s and the SysRespDelay is 1ms:
10°C / s × (ReadInterval + 32ms + 1ms) ≤ 2°C
In this case, ReadInterval must not exceed 167ms
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Temperature Sensor Timing
DQ Calibration
Mobile LPDDR2 devices feature a DQ calibration function that outputs one of two predefined system timing calibration patterns. For x16 devices, pattern A (MRR to MRR32), and pattern B (MRR
to MRR40), will return the specified pattern on DQ0 and DQ8; x32 devices return the specified pattern on DQ0, DQ8, DQ16, and DQ24.
For x16 devices, DQ[7:1] and DQ[15:9] drive the same information as DQ0 during the MRR burst.
For x32 devices, DQ[7:1], DQ[15:9], DQ[23:17], and DQ[31:25] drive the same information as DQ0
during the MRR burst. MRR DQ calibration commands can occur only in the idle state.
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MR32 and MR40 DQ Calibration Timing – RL = 3, tMRR = 2
Note: Only the NOP command is supported during Tmrr
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Data Calibration Pattern Description
Pattern
MR#
Bit Time 0 Bit Time 1 Bit Time 2 Bit Time 3
Notes
Pattern A
MR32
1
0
1
0
Reads to MR32 return DQ callibration pattern A
Pattern B
MR40
0
0
1
1
Reads to MR32 return DQ callibration pattern B
MODE REGISTER WRITE Command
The MODE REGISTER WRITE (MRW) command is used to write configuration data to the mode
registers. The MRW command is initiated with CS# LOW, CA0 LOW, CA1 LOW, CA2 LOW, and
CA3 LOW at the rising edge of the clock. The mode register is selected by
CA1f–CA0f, CA9r–CA4r. The data to be written to the mode register is contained in CA9f–CA2f.
The MRW command period is defined by tMRW. MRWs to read-only registers have no impact on
the functionality of the device. MRW can only be issued when all banks are in the idle precharge
state. One method of ensuring that the banks are in this state is to issue a PRECHARGE ALL command.
MODE REGISTER WRITE Timing – RL = 3, tMRW = 5
T0
CK#
CK
T1
T2
Tx
Tx + 1
t MRW
CA[9:0]
MR addr
CMD
MR addr
NOP 2
Ty 1
Ty + 1
Ty + 2
t MRW
MR data
MRW
Tx + 2
NOP 2
MR data
MRW
NOP 2
NOP 2
Valid
Truth Table for MRR and MRW
Current State
All Banks idle
Bank(s) Active
Command
Intermediate State
Next State
MRR
Mode Register Reading (All Banks idle)
All Banks idle
MRW
Mode Register Writing (All Banks idle)
All Banks idle
MRW (Reset)
Restting (Device Auto-Init)
All Banks idle
MRR
Mode Register Reading (Bank(s) idle)
Bank(s) Active
MRW
Not Allowed
Not Allowed
MRW (Reset)
Not Allowed
Not Allowed
Notes:
1. At time Ty, the device is in the idle state.
2. Only the NOP command is supported during tMRW.
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MRW RESET Command
The MRW RESET command brings the device to the device auto initialization (resetting) state in
the power-on initialization sequence (see RESET Command under Power-Up ). The MRW RESET
command can be issued from the idle state. This command resets all mode registers to their default values. Only the NOP command is supported during tINIT4. After MRW RESET, boot timings
must be observed until the
device initialization sequence is complete and the device is in the idle state. Array data is undefined after the MRW RESET command has completed.
For MRW RESET timing, see Figure of Voltage Ramp and Initialization Sequence.
MRW ZQ Calibration Commands
The MRW command is used to initiate a ZQ calibration command that calibrates output driver
impedance across process, temperature, and voltage. LPDDR2-S4 devices support ZQ calibration.
To achieve tighter tolerances, proper ZQ calibration must be performed.
There are four ZQ calibration commands and related timings: tZQINIT, tZQRESET, tZQCL, and
tZQCS. tZQINIT is used for initialization calibration; tZQRESET is used for resetting ZQ to the
default output impedance; tZQCL is used for long calibration(s); and tZQCS is used for short
calibration(s). See the MR10 Calibration (MA[7:0] = 0Ah) table for ZQ calibration command code
definitions.
ZQINIT must be performed for LPDDR2 devices. ZQINIT provides an output impedance accuracy
of ±15%. After initialization, the ZQ calibration long (ZQCL) can be used to recalibrate the system
to an output impedance accuracy of ±15%. A ZQ calibration short (ZQCS) can be used periodically to compensate for temperature and voltage drift in the system.
ZQRESET resets the output impedance calibration to a default accuracy of ±30% across process,
voltage, and temperature. This command is used to ensure output impedance accuracy to ±30%
when ZQCS and ZQCL commands are not used.
One ZQCS command can effectively correct at least 1.5% (ZQ correction) of output impedance
errors within tZQCS for all speed bins, assuming the maximum sensitivities specified in the tables
"output Driver Sensitivity Definition" and "Output Driver Temperature and Voltage Sensitivity" (page
133) are met. The appropriate interval between ZQCS commands can be determined using these
tables and system-specific parameters.
LPDDR2 devices are subject to temperature drift rate (Tdriftrate) and voltage drift rate (Vdriftrate)
in various applications. To accommodate drift rates and calculate the necessary interval between
ZQCS commands, apply the following formula.
ZQcorrection / 〔(Tsens × Tdriftrate) + (Vsens × Vdriftrate)〕
Where Tsens = MAX (dRONdT) and Vsens = MAX (dRONdV) define temperature and voltage
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sensitivities.
For example, if Tsens = 0.75%/˚C, Vsens = 0.20%/mV, Tdriftrate = 1˚C/sec, and Vdriftrate =15 mV/
sec, then the interval between ZQCS commands is calculated as:
1.5 / 〔(0.75 × 1) + (0.20 × 15)〕= 0.4s
A ZQ calibration command can only be issued when the device is in the idle state with all banks
precharged.
No other activities can be performed on the data bus during calibration periods (tZQINIT, tZQCL,
or tZQCS). The quiet time on the data bus helps to accurately calibrate output impedance. There is
no required quiet time after the ZQRESET command. If multiple devices share a single ZQ resistor, only one device can be calibrating at any given time. After calibration is complete, the ZQ ball
circuitry is disabled to reduce power consumption.
In systems sharing a ZQ resistor between devices, the controller must prevent tZQINIT, tZQCS,
and tZQCL overlap between the devices. ZQRESET overlap is acceptable. If the ZQ resistor is absent from the system, ZQ must be connected to VDDCA. In this situation, the device must ignore
ZQ calibration commands and the device will use the default calibration settings.
ZQ Timings
Notes:
1. Only the NOP command is supported during ZQ calibrations.
2. CKE must be registered HIGH continuously during the calibration period.
3. All devices connected to the DQ bus should be High-Z during the calibration process.
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ZQ External Resistor Value, Tolerance, and Capacitive Loading
To use the ZQ calibration function, a 240 ohm (±1% tolerance) external resistor must be connected
between the ZQ pin and ground. A single resistor can be used for each device or one resistor can
be shared between multiple devices if the ZQ calibration timings for each device do not overlap.
The total capacitive loading on the ZQ pin must be limited.
Power-Down
Power-down is entered synchronously when CKE is registered LOW and CS# is HIGH at the rising edge of clock. A NOP command must be driven in the clock cycle following power-down entry.
CKE must not go LOW while MRR, MRW, READ, or WRITE operations are in progress. CKE can
go LOW while any other operations such as ACTIVATE, PRECHARGE, auto precharge, or REFRESH are in progress, but the power-down IDD specification will not be applied until such operations are complete.
If power-down occurs when all banks are idle, this mode is referred to as idle power-down;
if power-down occurs when there is a row active in any bank, this mode is referred to as active
power-down.
Entering power-down deactivates the input and output buffers, excluding CK, CK#, and CKE. In
power-down mode, CKE must be held LOW; all other input signals are “Don’t Care.” CKE LOW
must be maintained until tCKE is satisfied. VREFCA must be maintained at a valid level during
power-down.
VDDQ can be turned off during power-down. If VDDQ is turned off, VREFDQ must also be turned
off. Prior to exiting power-down, both VDDQ and VREFDQ must be within their respective minimum/maximum operating ranges (see AC and DC Operating Conditions).
No refresh operations are performed in power-down mode. The maximum duration in power-down
mode is only limited by the refresh requirements outlined in REFRESH Command.
The power-down state is exited when CKE is registered HIGH. The controller must drive CS# HIGH
in conjunction with CKE HIGH when exiting the power-down state. CKE HIGH must be maintained
until tCKE is satisfied. A valid, executable command can be applied with power-down exit latency
tXP after CKE goes HIGH. Power-down exit latency is defined in the AC Timing section.
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Power-Down Entry and Exit Timing
Note: Input clock frequency can be changed or the input clock stopped during power-down, provided that the clock frequency is
between the minimum and maximum specified frequencies for the speed grade in use, and that prior to power-down exit, a minimum of two stable clocks complete.
CKE Intensive Environment
REFRESH-to-REFRESH Timing in CKE Intensive Environments
CK#
CK
t CKE
CKE
CMD
t CKE
t XP
t CKE
t REFI
REFRESH
t CKE
t XP
REFRESH
Note: The pattern shown can repeat over an extended period of time. With this pattern, all AC and DC timing and voltage specifications with temperature and voltage drift are ensured.
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READ to Power-Down Entry
Read to Power-Down entry
Notes:
1. CKE must be held HIGH until the end of the burst operation.
2. CKE can be registered LOW at (RL + RU(tDQSCK(MAX)/tCK) + BL/2 + 1) clock cycles after the clock on which the
READ command is registered
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READ with Auto Precharge to Power-Down Entry
Notes:
1. CKE must be held HIGH until the end of the burst operation.
2. CKE can be registered LOW at (RL + RU(tDQSCK/tCK)+ BL/2 + 1) clock cycles after the clock on which the READ
command is registered.
3. BL/2 with tRTP = 7.5ns and tRAS (MIN) is satisfied.
4. Start internal PRECHARGE
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WRITE to Power-Down Entry
Note: CKE can be registered LOW at (WL + 1 + BL/2 + RU(tWR/tCK)) clock cycles after the clock on which the WRITE command is registered.
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WRITE with Auto Precharge to Power-Down Entry
Write with Auto-precharge to Power-Down entry
Notes:
1. CKE can be registered LOW at (WL + 1 + BL/2 + RU(tWR/tCK + 1) clock cycles after the WRITE command is registered.
2. Start internal PRECHARGE
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REFRESH Command to Power-Down Entry
Note: CKE can go LOW tIHCKE after the clock on which the REFRESH command is registered.
ACTIVATE Command to Power-Down Entry
Note: CKE can go LOW at tIHCKE after the clock on which the ACTIVATE command is registered
PRECHARGE Command to Power-Down Entry
Note: CKE can go LOW tIHCKE after the clock on which the PRECHARGE command is registered.
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MRR Command to Power-Down Entry
Note: CKE can be registered LOW at (RL + RU(tDQSCK/tCK)+ BL/2 + 1) clock cycles after the clock on which the MRR command is registered.
MRW Command to Power-Down Entry
Note: CKE can be registered LOW tMRW after the clock on which the MRW command is registered
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Deep Power-Down
Deep power-down (DPD) is entered when CKE is registered LOW with CS# LOW, CA0 HIGH, CA1
HIGH, and CA2 LOW at the rising edge of the clock. The NOP command must be driven in the
clock cycle following power-down entry. CKE must not go LOW while MRR or MRW operations are
in progress. CKE can go LOW while other operations such as ACTIVATE, auto precharge, PRECHARGE, or REFRESH are in progress, however, deep power-down IDD specifications will not be
applied until those operations complete. The contents of the array will be lost upon entering DPD
mode.
In DPD mode, all input buffers except CKE, all output buffers, and the power supply to internal
circuitry are disabled within the device. VREFDQ can be at any level between 0 and VDDQ, and
VREFCA can be at any level between 0 and VDDCA during DPD. All power supplies (including
VREF) must be within the specified limits prior to exiting DPD (see AC and DC Operating Conditions).
To exit DPD, CKE must be HIGH, tISCKE must be complete, and the clock must be stable. To resume operation, the device must be fully reinitialized using the power-up initialization sequence.
Deep Power-Down Entry and Exit Timing
Notes:
1. The initialization sequence can start at any time after Tx + 1.
2. tINIT3 and Tx + 1 refer to timings in the initialization sequence. For details, see Mode Register Definition
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Input Clock Frequency Changes and Stop Events
LPDDR2 support Clock frequency changes and clock stop under the conditions detailed in this
section
Input Clock Frequency Changes and Clock Stop with CKE LOW
During CKE LOW, Mobile LPDDR2 devices support input clock frequency changes and clock stop
under the following conditions:
• Refresh requirements are met
• Only REFab or REFpb commands can be in process
• Any ACTIVATE or PRECHARGE commands have completed prior to changing the frequency
• Related timing conditions,tRCD and tRP, have been met prior to changing the frequency
• The initial clock frequency must be maintained for a minimum of two clock cycles after CKE goes
LOW
• The clock satisfies tCH(abs) and tCL(abs) for a minimum of two clock cycles prior to CKE going
HIGH
For input clock frequency changes, tCK(MIN) and tCK(MAX) must be met for each clock cycle.
After the input clock frequency is changed and CKE is held HIGH, additional MRW commands may
be required to set the WR, RL, etc. These settings may require adjustment to meet minimum timing
requirements at the target clock frequency.
For clock stop, CK is held LOW and CK# is held HIGH.
NO OPERATION Command
The NO OPERATION (NOP) command prevents the device from registering any unwanted commands issued between operations. A NOP command can only be issued at clock cycle N when the
CKE level is constant for clock cycle N-1 and clock cycle N. The NOP command has two possible
encodings: CS# HIGH at the clock rising edge N; and CS# LOW with CA0, CA1, CA2 HIGH at the
clock rising edge N.
The NOP command will not terminate a previous operation that is still in process, such as a READ
burst or WRITE burst cycle
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Electrical Specifications
Absolute Maximum DC Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Min Max Units Notes
VDD1 supply voltage relative to VSS
VDD1
-0.4
2.3
V
2
VDD2 supply voltage relative to VSS
VDD2
-0.4
1.6
V
2
VDDCA
-0.4
1.6
V
2,4
VDDQ
-0.4
1.6
V
2,3
VIN, VOUT -0.4
1.6
V
125
°C
VDDCA supply voltage relative to VSSCA
VDDQ supply voltage relative to VSSQ
Voltage on any ball relative to VSS
Storage Temperature
TSTG
-55
5
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
2. See “Power-Ramp” section in “Power-up, Initialization, and Power-Off” for relationships between power supplies.
3. VREFDQ 0.6 x VDDQ; however, VREFDQ may be VDDQ provided that VREFDQ 300mV.
4. VREFCA 0.6 x VDDCA; however, VREFCA may be VDDCA provided that VREFCA 300mV.
5. Storage Temperature is the case surface temperature on the center/top side of the LPDDR2 device. For the measurement
conditions, please refer to JESD51-2 standard.
86
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IS43/46LD16160A
IS43/46LD32800A
Input/Output Capacitance
LPDDR2 800-466
Parameter
MIN
MAX
MIN
MAX
Unit
Notes
Input capacitance, CK and CK#
C CK
1.0
2.0
1.0
2.0
pF
2, 3
Input capacitance delta, CK and CK#
C DCK
0
0.20
0
0.25
pF
2, 3, 4
Input capacitance, all other inputonly pins
CI
1.0
2.0
1.0
2.0
pF
2, 3, 5
Input capacitance delta, all other inputonly pins
C DI
–0.40
+0.40
–0.50
+0.50
pF
2, 3, 6
Input/output capacitance, DQ, DM, DQS,
DQS#
C IO
1.25
2.5
1.25
2.5
pF
2, 3, 7, 8
C DDQS
0
0.25
0
0.30
pF
2, 3, 8, 9
C DIO
–0.5
+0.5
–0.6
+0.6
pF
2, 3, 8, 10
Input/output capacitance delta, DQS,
DQS#
Input/output capacitance delta, DQ, DM
Symbol
LPDDR2 400-200
Notes:
1. TC –25˚C to +105˚C; VDDQ = 1.14–1.3V; VDDCA = 1.14–1.3V; VDD1 = 1.7–1.95V; VDD2 = 1.14–1.3V).
2. This parameter applies to die devices only (does not include package capacitance).
3. This parameter is not subject to production testing. It is verified by design and characterization. The capacitance is measured
according to
JEP147 (procedure for measuring input capacitance using a vector network analyzer), with VDD1, VDD2, VDDQ, VSS, VSSCA,
and
VSSQ applied; all other pins are left floating.
4. Absolute value of CCK - CCK#.
5. CI applies to CS#, CKE, and CA[9:0].
6. CDI = CI - 0.5 × (CCK + CCK#).
7. DM loading matches DQ and DQS.
8. MR3 I/O configuration drive strength OP[3:0] = 0001b (34.3 ohm typical).
9. Absolute value of CDQS and CDQS#.
10. CDIO = CIO - 0.5 × (CDQS + CDQS#) in byte-lane.
11. Maximum external load capacitance on ZQ pin: 5pF.
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IS43/46LD16160A
IS43/46LD32800A
Operation or timing that is not specified is illegal, and after such an event, in order to guarantee proper operation, the
LPDDR2 Device must be powered down and then restarted through the specialized initialization sequence before
normal operation can continue.
Recommended
DC Operating
Conditions
Recommended LPDDR2-S4
DC Operating
Conditions
Symbol
VDD1
LPDDR2-S4B
Min
Typ
Max
1.70
1.80
1.95
DRAM
Unit
Core Power1
V
VDD2
1.14
1.20
1.3
Core Power2
V
VDDCA
1.14
1.20
1.3
Input Buffer Power
V
VDDQ
1.14
1.20
1.3
I/O Buffer Power
V
NOTE 1 VDD1 uses significantly less power than VDD2
88
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IS43/46LD16160A
IS43/46LD32800A
Input Leakage Current
Parameter/Condition
Symbol
Min
Max
Unit Notes
IL
-2
2
uA
2
IVREF
-1
1
uA
1
Input Leakage current
For CA, CKE, CS_n, CK_t, CK_c
Any input 0V ≤ VIN ≤ VDDCA
(All other pins not under test = 0V)
VREF supply leakage current
VREFDQ = VDDQ/2 or VREFCA = VDDCA/2
(All other pins not under test = 0V)
Notes:
1. The minimum limit requirement is for testing purposes. The leakage current on VREFCA and VREFDQ pins should be minimal.
2. Although DM is for input only, the DM leakage shall match the DQ and DQS_t/DQS_c output leakage specification.
Operating Temperature Range
Parameter/Condition
Standard
Extended
Symbol
TOPER
Min
Max
Unit
-40
85
oC
85
105
o
C
Notes:
1. Operating Temperature is the case surface temperature on the center/top side of the LPDDR2 device. For the measurement
conditions, please refer to JESD51-2 standard.
2. Some applications require operation of LPDDR2 in the maximum temperature conditons in the Extended Temperature Range
between 85°C and 105°C case temperature. For LPDDR2 devices, some derating is neccessary to operate in this range. See
MR4 on page 40.
3. Either the device case temperature rating or the temperature sensor (See “Temperature Sensor”) may be used to set an appropriate refresh rate, determine the need for AC timing de-rating and/or monitor the operating temperature. When using the
temperature sensor, the actual device case temperature may be higher than the TOPER rating that applies for the Standard or
Extended Temperature Ranges. For example, TCASE may be above 85°C when the temperature sensor indicates a temperature of less than 85°C.
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IS43/46LD16160A
IS43/46LD32800A
AC and DC Input Levels for Single-Ended CA and CS_n Signals
Single-Ended AC and DC Input Levels for CA and CS_n Inputs
Symbol
Parameter
LPDDR2-800 to LPDDR2-466
LPDDR2-400 to LPDDR2-200
Max
Single-Ended AC and DC Input Levels for CA and CS_n Inputs
V
(AC)
AC
input
logic
high
Vref
+
0.220
Note
IHCA
Single-Ended
AC and DC Input Levels for CA and CS_n Inputs 2
Min
Min
Max
Unit Notes
Vref + 0.300
Note 2
V
1, 2
LPDDR2-800
to LPDDR2-200
Note 2 to LPDDR2-466
Vref - 0.220 LPDDR2-400
Note 2
Vref - 0.300
V
1, 2
VILCA(AC) AC input logic low
Symbol
Parameter
Unit
LPDDR2-800
LPDDR2-400
VIHCA
(DC) DC input logic
high
Vref + 0.130 to LPDDR2-466
VDDCA
Vref + 0.200 to LPDDR2-200
VDDCA
V Notes
1
Max
Min
Max
Min
Symbol
Parameter
Unit Notes
VSSCA
Vref
0.130
VSSCA
Vref
0.200
V
1
VILCA(DC) DC input logic low
Max
Min
Max
Min
VIHCA(AC) AC input logic high
Vref + 0.220
Note 2
Vref + 0.300
Note 2
V
1, 2
(DC)
Reference
Voltage
for
CA
and
0.49
*
VDDCA
0.51
*
VDDCA
0.49
*
VDDCA
0.51
*
VDDCA
V
3,
4
V
VRefCA
(AC) AC
AC input
input logic
logic low
high
Vref
+ 0.220
Note
2
Vref
+ 0.300
Note
2
V
1,
IHCA
Note
2
Vref
- 0.220
Note
2
Vref
- 0.300
V
1, 2
2
V
ILCA(AC)
CS_n inputs
(AC)
AC
input
logic
low
Note
2
Vref
- 0.220
Note
2
Vref
- 0.300
V
1,12
V
VILCA
(DC)
DC
input
logic
high
Vref
+
0.130
VDDCA
Vref
+
0.200
VDDCA
V
IHCA
V
(DC) DC
DC input
input logic
logic low
high
Vref
+ 0.130
VDDCA
Vref
+ 0.200
VDDCA
V
1
Notes:
VSSCA
Vref
- 0.130
VSSCA
Vref
- 0.200
V
1
VIHCA
ILCA(DC)
1.VFor
CA
and
CS_n
input
only
pins.
Vref
=
VrefCA(DC).
(DC)
DC
input
logic
low
VSSCA
Vref
0.130
VSSCA
Vref
0.200
V
0.49 * VDDCA 0.51 * VDDCA 0.49 * VDDCA 0.51 * VDDCA V
3,14
VILCA
RefCA(DC) Reference Voltage for CA and
2.VSee “Overshoot
and Undershoot
Voltage forSpecifications”
CA and
0.49 * VDDCA 0.51 * VDDCA 0.49 * VDDCA 0.51 * VDDCA V
3, 4
CS_n inputs
RefCA(DC) Reference
3. The
ac peakCS_n
noiseinputs
on VRefCA may not allow VRefCA to deviate from VRefCA(DC) by more than +/-1%
VDDCA
(forInput
reference:
approx.
+/- 12 mV).
AC
and DC
Levels
for CKE
4. For reference: approx. VDDCA/2 +/- 12 mV.
Single-Ended AC and DC Input Levels for CKE
Symbol
Parameter
Min
AC and DC Input Levels for CKE
VIHCKE
Input
High for
Level
0.8 * VDDCA
AC
and DCCKE
Input
Levels
CKE
CKE
Input
Low
Level
Note 1
V
Single-Ended
AC and DC Input Levels for CKE
ILCKE
Single-Ended AC and DC Input Levels for CKE
Symbol
Parameter
Min
Symbol
Parameter
Min
VIHCKE
CKE Input High Level
0.8 * VDDCA
Max
Note 1
0.2 * VDDCA
Max
Max
Note 1
V
High
Level
* VDDCA
1
AC
and DC CKE
InputInput
Levels
Single-Ended0.8
Data
Signals
CKE
Input
Low for
Level
Note
1
0.2 Note
* VDDCA
VIHCKE
ILCKE
CKE Input Low Level
Note 1
0.2 * VDDCA
VILCKE
Note:
Single-Ended
AC
and
DC InputSpecifications”
Levels for DQ and DM
1.
See “Overshoot
and
Undershoot
AC and DC Input Levels for Single-Ended
Data Signals
LPDDR2-800
to LPDDR2-466
Parameter
AC Symbol
and DC Input Levels
for Single-Ended Data Signals
Max
Min
Single-Ended AC and DC Input Levels for DQ and DM
VIHDQ(AC)
0.220DM
Note 2
ACand
input
logic
high
Single-Ended
AC
DC
Input
Levels forVref
DQ+ and
LPDDR2-800
VILDQ(AC)
Note 2 to LPDDR2-466
Vref - 0.220
AC input logic low
Symbol
Parameter
LPDDR2-800 to LPDDR2-466
VIHDQ
(DC)
Vref Min
+ 0.130
VDDQ
DC input
logic high
Max
Symbol
Parameter
Max
Min
V
(DC)
VSSQ
Vref
- 0.130
DC
input
logic
low
VILDQ
Vref + 0.220
Note
2
AC input logic high
IHDQ(AC)
V
(AC)
Vref
+
0.220
Note
2
0.49
*
VDDQ
0.51
*
VDDQ
AC
input
logic
high
Reference
Voltage
for
IHDQ
RefDQ(DC)
VILDQ(AC)
Note 2
Vref - 0.220
AC input logic low
DQ,
DM
inputs
V
(AC)
Note
2
Vref
0.220
AC
input
logic
low
VILDQ
Vref + 0.130
VDDQ
DC input logic high
IHDQ(DC)
V
(DC)
Vref
+
0.130
VDDQ
DC
input
logic
high
IHDQ
VILDQ(DC)
VSSQ
Vref
- 0.130
DC input logic low
V
(DC)
VSSQ
Vref
- VDDQ
0.130
DC
input
logic
low
VILDQ
0.49
*
VDDQ
0.51
*
Reference
Voltage
for
RefDQ(DC)
VRefDQ(DC)
0.49 * VDDQ
0.51 * VDDQ
Reference
Voltage for
DQ, DM inputs
DQ, DM inputs
Unit Notes
V
V
1
1
Unit Notes
Unit Notes
V
V
V
V
1
1
1
1
LPDDR2-400 to LPDDR2-200
Min
Max
Vref + 0.300
Note 2
LPDDR2-400
to LPDDR2-200
Note 2
Vref - 0.300
LPDDR2-400 to LPDDR2-200
VrefMin
+ 0.200
VDDQ
Max
Min
VrefVSSQ
+ 0.300
Vref
+ VDDQ
0.300
0.49
*
Note
2
Max
Vref
- 0.200
Note
2
Note
2
0.51
*
VDDQ
Vref - 0.300
0.49VSSQ
* VDDQ
0.49 * VDDQ
Vref *- VDDQ
0.200
0.51
0.51 * VDDQ
Note
2
Vref
+ 0.200
VrefVSSQ
+ 0.200
Vref
- 0.300
VDDQ
VDDQ
Vref
- 0.200
Unit
Notes
V
V
Unit
V
Unit
V
V
V
V
V
V
V
V
V
V
V
1, 2, 5
1, 2, 5
Notes
1
Notes
1 5
1, 2,
1,
1,3,2,
2,45
5
1, 2,
1 5
1
1
3,14
3, 4
Notes:
1. For DQ input only pins. Vref = VrefDQ(DC).
2. See “Overshoot and Undershoot Specifications”
3. The ac peak noise on VRefDQ may not allow VRefDQ to deviate from VRefDQ(DC) by more than +/-1%
VDDQ (for reference: approx. +/- 12 mV).
4. For reference: approx. VDDQ/2 +/- 12 mV.
90
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IS43/46LD16160A
IS43/46LD32800A
LPDDR2-S4 Refresh Requirement Parameters
Parameter
Symbol
Number of Banks
256Mb
Unit
4
Refresh Window Tcase ≤ 85°C
tREFW
32
ms
Refresh Window
85°C < Tcase ≤ 105°C
tREFW
8
ms
R
4096
REFab
tREFI
7.8
REFpb
tREFIpb
Not
permitted
us
Refresh Cycle time
tRFCab
90
ns
Per Bank Refresh Cycle time
tRFCpb
N/A
ns
Burst Refresh Window
= (4 x 8 x tRFCab)
tREFBW
2.88
us
Required number of REFRESH
commands (min)
Average time between
REFRESH commands
(for reference only)
Tcase ≤ 85°C"
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92
tCL(avg)
tCK(abs)
tCH(abs),
allowed
tCL(abs),
allowed
Average low pulse width
Absolute Clock Period
Absolute clock HIGH pulse width
(with allowed jitter)
Absolute clock LOW pulse width
(with allowed jitter)
tJIT(duty),
allowed
tERR(2per),
allowed
tERR(3per),
allowed
tERR(4per),
allowed
tERR(5per),
allowed
tERR(6per),
allowed
tERR(7per),
allowed
Cumulative error across 2 cycles
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across 6 cycles
Cumulative error across 7 cycles
tJIT(cc),
allowed
Duty cycle Jitter (with allowed jitter)
Maximum Clock Jitter between two
consecutive clock cycles (with allowed jitter)
tJIT(per),
allowed
tCH(avg)
Average high pulse width
Clock Period Jitter (with allowed jitter)
tCK(avg)
Symbol
Average Clock Period
Max. Frequency*4
Parameter
533
1066
-95
466
933
4.3
233
466 *5
260
280
300
150
-150
360
180
-180
500
250
-250
ps
ps
-132
132
-157
157
-175
175
-188
188
-200
200
-209
209
min
max
min
max
min
max
min
max
min
max
min
max
221
-221
211
-211
199
-199
185
-185
166
-166
140
-140
232
-232
222
-222
209
-209
194
-194
175
256
-256
244
-244
230
-230
214
-214
192
-192
162
147
-175
-162
-147
279
-279
266
-266
251
-251
233
-233
210
-210
177
-177
302
-302
288
-288
272
-272
253
-253
227
-227
191
-191
325
-325
311
-311
293
-293
272
-272
245
348
-348
333
-333
314
-314
291
-291
262
-262
418
-418
399
-399
377
-377
350
-350
314
-314
581
-581
555
-555
524
-524
486
-486
437
-437
368
265
221
206
-245
-368
-265
-221
-206
ps
ps
ps
ps
ps
ps
ps
240
140
-140
max((tCH(abs),max - tCH(avg),max), (tCL(abs),max - tCL(avg),max)) * tCK(avg)
220
130
-130
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
ps
tCK(avg)
tCK(avg)
ns
MHz
Unit
max
200
120
10
100
200 *5
ps
190
110
7.5
133
266 *5
min((tCH(abs),min - tCH(avg),min), (tCL(abs),min - tCL(avg),min)) * tCK(avg)
180
100
6
166
333
min
max
95
0.57
max
90
0.43
min
-90
0.57
max
min
0.43
min
max
tCK(avg)min + tJIT(per),min
0.45
0.55
min
max
5
200
400
min
0.45
0.55
-120
3.75
266
533
min
-110
3
333
667
max
-100
2.5
400
800
LPDDR2
1 00
Clock Timing
min t CK
max
min
~
min max
LPDDR2 AC Timing Table *9
AC TIMINGS
IS43/46LD16160A
IS43/46LD32800A
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Rev. 00B
8/11/2014
-231
231
-237
237
-242
242
min
max
min
max
min
max
tERR(10per),
allowed
tERR(11per),
allowed
tERR(12per),
allowed
tERR(nper),
allowed
Cumulative error across 10 cycles
Cumulative error across 11 cycles
Cumulative error across 12 cycles
Cumulative error across n = 13, 14 . . .
49, 50 cycles
256
-256
250
-250
244
-244
237
-237
266
-274
274
-282
282
-289
289
-296
296
214
-249
249
-257
257
-263
263
-269
269
323
-323
316
-316
308
-308
299
-299
290
-290
533
350
-350
342
-342
334
-334
324
-324
314
-314
466*5
LPDDR2
377
-377
368
-368
359
-359
349
-349
338
-338
400
403
-403
395
-395
385
-385
374
-374
362
-362
333
484
-484
474
-474
462
-462
449
-449
435
-435
266*5
tERR(nper),allowed,min = (1 + 0.68ln(n)) * tJIT(per),allowed,min
224
-266
-214
667
tERR(nper),allowed,max = (1 + 0.68ln(n)) * tJIT(per),allowed,max
-224
min
max
tERR(9per),
allowed
Cumulative error across 9 cycles
229
-229
800
min
217
933
max
-217
min
max
tERR(8per),
allowed
Cumulative error across 8 cycles
1066
min max
Symbol
Parameter
min t CK
LPDDR2 AC Timing Table *9
672
-672
658
-658
641
-641
624
-624
604
-604
200*5
ps
ps
ps
ps
ps
ps
Unit
IS43/46LD16160A
IS43/46LD32800A
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93
94
tDQSCKDM
DQSCK Delta Medium*19
max
max
max
tDQSQ
tQHS
Data hold skew factor
min
min
tQHP
tQH
tRPRE
tRPST
*15,*17
tLZ(DQ)
clock*15
tHZ(DQS)
tHZ(DQ)
DQS high-Z from clock*15
DQ high-Z from clock*15
DQ low-Z from
tLZ(DQS)
DQS low-Z from clock*15
Read postamble
Read preamble
*15,*16
DQ / DQS output hold time from DQS
max
max
min
min
min
min
min
tQSL
DQS Output Low Pulse Width
Data Half Period
min
tQSH
DQS Output High Pulse Width
DQSCK Delta Long
DQS - DQ skew
max
max
tDQSCKDL
*20
tDQSCKDS
DQSCK Delta Short*18
230
200
920
680
330
380
450
*14
540
667
670
533
770
1
50
90
360
260
220
1050
780
280
240
1200
900
340
280
1400
1050
ps
ps
ps
tDQSCK(MAX) + (1.4 * tDQSQ(MAX))
ps
tDQSCK(MIN) - 300
tDQSCK(MAX) - 100
tCK(avg)
tCK(avg)
0.9
ps
tCL(abs) - 0.05
tCK(avg)
tQHP - tQHS
ps
ps
ps
ps
min(tQSH, t QSL)
1000
700
-
2100
tCK(avg)
750
600
-
2000
ps
ps
ns
ns
ns
us
Unit
tCL(abs) - 0.05
600
500
-
1900
1800
200*5
tCK(avg)
480
400
2400
1800
1350
266*5
tCH(abs) - 0.05
450
370
2100
1550
1080
333
tDQSCK(MIN) - (1.4 * tQHS(MAX))
400
340
1800
1350
900
400
LPDDR2 *5
466*5
5500
Read Parameters
3
6
6
800
2500
min
tZQRESET
Short Calibration Time
Calibration Reset Time
933
max
min
tZQCS
tDQSCK
min
tZQCL
Long Calibration Time
DQS output access time from
CK_t/CK_c
min
tZQINIT
Initialization Calibration Time
1066
ZQ Calibration Parameters
min t CK
min
min max
Symbol
Parameter
LPDDR2 AC Timing Table *9
IS43/46LD16160A
IS43/46LD32800A
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Rev. 00B
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Rev. 00B
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Integrated Silicon Solution, Inc. — www.issi.com
min
min
min
min
min
tDSS
tDSH
tWPST
tWPRE
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Write postamble
Write preamble
DQS input low-level width
tDQSL
min
tDQSH
DQS input high-level width
0.35
0.4
0.2
0.2
0.4
0.4
0.75
1.25
450
min
430
max
350
tDQSS
270
Write command to 1st DQS
latching transition
235
0.35
210
450
min
430
LPDDR2
466*5
min
350
533
tDS
270
*14
667
tDIPW
235
800
DQ and DM input pulse width
210
933
DQ and DM input setup time (Vref based)
min
1066
Write Parameters
min max min t CK
tDH
Symbol
DQ and DM input hold time (Vref based)
Paramete
r
LPDDR2 AC Timing Table *9
480
480
400
600
600
333
750
750
266*5
1000
1000
200*5
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
ps
ps
Unit
IS43/46LD16160A
IS43/46LD32800A
95
96
min
min
min
min
min
min
tCKE
tISCKE*2
tIHCKE*3
tIS*1
tIH*1
tIPW
tCKb
CKE min. pulse width (high and low pulse width)
CKE input setup time
CKE input hold time
Address and control input setup time (Vref based)
Address and control input hold time (Vref based)
Address and control input pulse width
Clock Cycle Time
1066
933
3
CKE Input Parameters
min t CK
250
250
min
min
min
max
max
min
min
tIHCKEb
tISb
tIHb
tDQSCKb
tDQSQb
tQHSb
tMRW
tMRR
CKE Input Hold Time
Address & Control Input Setup Time
Address & Control Input Hold Time
DQS Output Data Access Time
from CK_t/CK_c
Data Strobe Edge to
Ouput Data Edge tDQSQb - 1.2
Data Hold Skew Factor
MODE REGISTER Write command period
Mode Register Read command period
max
min
min
tISCKEb
CKE Input Setup Time
min
max
2
5
Mode Register Parameters
-
-
-
-
-
-
-
-
Boot Parameters (10 MHz - 55 MHz)
220
220
Command Address Input Parameters
min max
Symbol
Parameter
290
290
800
LPDDR2 AC Timing Table *9
460
370
*8,10,11
460
*14
533
370
667
520
520
466 *5
2
5
1.2
1.2
400
600
600
10.0
2.0
1150
1150
2.5
2.5
81
100
0.40
0.25
0.25
3
LPDDR2
740
740
333
900
900
266 *5
1150
1150
200 *5
tCK(avg)
tCK(avg)
ns
ns
ns
ps
ps
ns
ns
ns
tCK(avg)
ps
ps
tCK(avg)
tCK(avg)
tCK(avg)
Unit
IS43/46LD16160A
IS43/46LD32800A
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Rev. 00B
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Rev. 00B
8/11/2014
2
3
min
min
min
min
min
min
min
Fast
RL
WL
tRC
tCKESR
tXSR
tXP
tCCD
tRTP
tRCD
tRPpb
tRPab
4-bank
tRPab
8-bank
tRAS
Write Latency
ACTIVE to ACTIVE command period
CKE min. pulse width during Self-Refresh
(low pulse width during Self-Refresh)
Self refresh exit to next valid command delay
Exit power down to next valid command delay
LPDDR2-S4 CAS to CAS delay
Internal Read to Precharge command delay
RAS to CAS Delay
Row Precharge Time
(single bank)
Row Precharge Time
(all banks)
Row Precharge Time
(all banks)
Row Active Time
1066
933
Integrated Silicon Solution, Inc. — www.issi.com
3
-
min
max
min
min
min
tRRD
tFAW
tDPD
Four Bank Activate Window
Minimum Deep Power Down Time
Active bank A to Active bank B
3
min
3
Typ
Slow
tWTR
3
Fast
8
2
2
3
21
3
Slow
min
18
3
500
50
10
7.5
15
70
42
27
24
18
15
24
Typ
tWR
50
18
15
7.5
2
7.5
ns
ns
ns
ns
ns
ns
ns
tCK(avg)
ns
ns
ns
ns
tCK(avg)
tCK(avg)
Unit
42
500
10
10
15
70
us
ns
ns
ns
ns
us
ns
ns
ns
27
21
ns
ns
18
24
ns
200 *5
18
266 *5
ns
60
1
3
333
15
24
18
15
tRFCab + 10
15
15
18
3
Write Recovery Time
2
4
400
24
3
Internal Write to Read
Command Delay
466 *5
tRAS + tRPab (with all-bank Precharge)
tRAS + tRPpb (with per-bank Precharge)
2
4
533
LPDDR2
24
18
15
7.5
2
7.5
15
2
5
Fast
3
6
Slow
3
Fast
4
7
*12
667
3
3
4
8
800
Typ
3
Typ
2
2
2
3
1
3
Slow
min
LPDDR2 SDRAM Core Parameters
Read Latency
min t CK
Symbol
Parameter
min max
LPDDR2 AC Timing Table *9
IS43/46LD16160A
IS43/46LD32800A
97
IS43/46LD16160A
IS43/46LD32800A
Notes:
1. Frequency values are for reference only. Clock cycle time (tCK) is used to determine device capabilities.
2. All AC timings assume an input slew rate of 1 V/ns.
3. READ, WRITE, and input setup and hold values are referenced to VREF.
4. tDQSCKDS is the absolute value of the difference between any two tDQSCK measurements (in a byte lane) within a contiguous sequence of bursts in a 160ns rolling window. tDQSCKDS is not tested and is guaranteed by design. Temperature drift in the
system is < 10°C/s. Values do not include clock jitter.
5. tDQSCKDM is the absolute value of the difference between any two tDQSCK measurements (in a byte lane) within a 1.6μs
rolling window. tDQSCKDM is not tested and is guaranteed by design. Temperature drift in the system is < 10 °C/s. Values do not
include clock jitter.
6. tDQSCKDL is the absolute value of the difference between any two tDQSCK measurements (in a byte lane) within a 32ms
rolling window. tDQSCKDL is not tested and is guaranteed by design. Temperature drift in the system is < 10 °C/s. Values do not
include clock jitter.
7. For LOW-to-HIGH and HIGH-to-LOW transitions, the timing reference is at the point when the signal crosses the transition
threshold (VTT). tHZ and tLZ transitions occur in the same access time (with respect to clock) as valid data transitions. These
parameters are not referenced to a specific voltage level but to the time when the device output is no longer driving (for tRPST,
tHZ(DQS) and tHZ(DQ)), or begins driving (for tRPRE, tLZ(DQS), tLZ(DQ)). Figure shows a method to calculate the point when
device is no longer driving tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. The parameters
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as single-ended. The timing parameters tRPRE and tRPST are determined from the differential signal DQS, /DQS.
Output Transition Timing
V OH
2x X
V TT + 2 x Y mV
a ct u a l w a ve
t HZ(DQS), t HZ(DQ)
fo
V TT
rm
V TT - Y mV
V OH - X mV
V OH - 2x X mV
t LZ(DQS), t LZ(DQ)
V TT + Y mV
X
Y
2x Y
V OL + 2x X mV
V TT - 2 x Y mV
T1 T2
Start driving point = 2 × T1 - T2
V TT
V OL + X mV
V OL
T1 T2
End driving point = 2 × T1 - T2
8. Measured from the point when DQS, /DQS begins driving the signal to the point when DQS, /DQS begins driving the first rising strobe edge.
9. Measured from the last falling strobe edge of DQS, /DQS to the point when DQS, /DQS finishes driving the signal.
10. CKE input setup time is measured from CKE reaching a HIGH/LOW voltage level to CK, /CK crossing.
11. CKE input hold time is measured from CK, /CK crossing to CKE reaching a HIGH/LOW voltage level.
12. Input set-up/hold time for signal (CA[9:0], /CS).
13. To ensure device operation before the device is configured, a number of AC boot-timing parameters are defined in this table.
Boot parameter symbols have the letter b appended (for example, tCK during boot is tCKb).
14. The LPDDR device will set some mode register default values upon receiving a RESET (MRW) command as specified in ―
Mode Register Definition‖.
15. The output skew parameters are measured with default output impedance settings using the reference load.
16. The minimum tCK column applies only when tCK is greater than 6ns.
17. Timing derating applies for operation at 85°C to 105°C when the requirement to derate is indicated by mode register 4 opcode.
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18. tDQSCKDS is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a
contiguous sequence of bursts within a 160ns rolling window. tDQSCKDS is not tested and is guaranteed by design. Temperature
drift in the system is <10C/s. Values do not include clock jitter.
19. tDQSCKDM is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a
1.6us rolling window. tDQSCKDM is not tested and is guaranteed by design. Temperature drift in the system is <10C/s. Values do
not include clock jitter.
20. tDQSCKDL is the absolute value of the difference between any two tDQSCK measurements (within a byte lane) within a 32ms
rolling window. tDQSCKDL is not tested and is guaranteed by design. Temperature drift in the system is <10C/s. Values do not
include clock jitter
Command Input Setup and Hold Timing
CK#
CK
T0
T1
T2
t IS t IH
t IS t IH
CS#
V IL(DC)
V IL(AC)
T3
V IH(DC)
V IH(AC)
t IS t IH
CA[9:0]
CMD
CA
rise
CA
fall
NOP
CA
rise
t IS t IH
CA
fall
Command
CA
rise
CA
fall
NOP
Transitioning data
CA
rise
CA
fall
Command
Don’t Care
Notes:
1. The setup and hold timing shown applies to all commands.
2. Setup and hold conditions also apply to the CKE pin. For timing diagrams related to the CKE pin, see Power-Down .
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IS43/46LD16160A
IS43/46LD32800A
CA and /CS Setup, Hold, and Derating
The For all input signals (CA and /CS), the total required setup time (tIS) and hold time (tIH) is
calculated by adding the data sheet tIS (base) and tIH (base) values to the ΔtIS and ΔtIH derating
values, respectively. Example: tIS (total setup time) = tIS(base) + ΔtIS.
Setup (tIS) typical slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min. The setup (tIS) typical slew rate for a falling
signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of
VIL(AC)max. If the actual signal is always earlier than the typical slew rate line between the shaded VREF(DC)-to-(AC) region, use the typical slew rate for the derating value. If the actual signal
is later than the typical slew rate line anywhere between the shaded VREF(DC)-to-AC region, the
slew rate of a tangent line to the actual signal from the AC level to the DC level is used for the derating value.
The hold (tIH) typical slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC). The hold (tIH) typical slew rate for a falling
signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing
of VREF(DC). If the actual signal is always later than the typical slew rate line between the shaded
DC-to-VREF(DC) region, use the typical slew rate for the derating value. If the actual signal is
earlier than the typical slew rate line anywhere between the shaded DC-to-VREF(DC) region, the
slew rate of a tangent line to the actual signal from the DC level to VREF(DC) level is used for the
derating value.
For a valid transition, the input signal must remain above or below VIH/VIL(AC) for a specified time,
tVAC. For slow slew rates the total setup time could be a negative value (that is, a valid input signal
will not have reached VIH/VIL(AC) at the time of the rising clock transition). A valid input signal is
still required to complete the transition and reach VIH/VIL(AC).
For slew rates between the values listed, the derating values are obtained using linear interpolation. Slew rate values are not typically subject to production testing. They are verified by design
and characterization.
CA and /CS Setup and Hold Base Values (> 400 MHz, 1 V/ns slew rate)
Data Rate
Parameter
800
667
533
466
t IS (base)
Reference
70
150
240
300
V IH /V IL(AC) = V REF(DC) ±220mV
t IH (base)
160
240
330
390
V IH /V IL(DC) = V REF(DC) ±130mV
Note: AC/DC referenced for 1 V/ns CA and /CS slew rate and 2 V/ns differential CK, /CK slew rate.
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IS43/46LD16160A
IS43/46LD32800A
Derating Values for AC/DC-based tIS/tIH (AC220) - tIS, tIH derating in [ps], AC/DC-based
CK, CK# Differential Slew Rate
4.0 V/ns
˂t IS
CA, CS# slew
rate V/ns
3.0 V/ns
˂t IH
˂t IS
2.0 V/ns
˂t IH
˂t IS
˂t IH
1.8 V/ns
˂t IS
˂t IH
1.6 V/ns
˂t IS
˂t IH
1.4 V/ns
˂t IS
˂t IH
1.2 V/ns
˂t IS
˂t IH
1.0 V/ns
˂t IS
˂t IH
2.0
110
65
110
65
110
65
1.5
74
43
73
43
73
43
89
59
1.0
0
0
0
0
0
0
16
16
32
32
-3
-5
-3
-5
13
11
29
27
45
43
-8
-13
8
3
24
19
40
35
56
55
2
-6
18
10
34
26
50
46
66
78
10
-3
26
13
42
33
58
65
4
-4
20
16
36
48
-7
2
17
34
0.9
0.8
0.7
0.6
0.5
0.4
Note: Shaded cells are not supported.
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IS43/46LD16160A
IS43/46LD32800A
Required Time for Valid Transition with tVAC Above VIH(AC) and Below VIL(AC)
t VAC at 300mV (ps)
Slew Rate (V/ns)
t VAC at 220mV (ps)
Min
Max
Min
Max
>2.0
75
–
175
–
2.0
57
–
170
–
1.5
50
–
167
–
1.0
38
–
163
–
0.9
34
–
162
–
0.8
29
–
161
–
0.7
22
–
159
–
0.6
13
–
155
–
0.5
0
–
150
–
<0.5
0
–
150
–
Typical Slew Rate and tVAC: tIS for CA and /CS Relative to Clock
DQS
DQS#
t DS
t DH
t DS
t DH
V DDQ
V IH(AC)min
t VAC
V REF to AC
region
V IH(DC)min
Typical
slew rate
V REF(DC)
Typical
slew rate
V IL(DC)max
V REF to AC
region
V IL(AC)max
V SSQ
ΔTF
Setup slew rate
falling signal
102
ΔTR
=
V REF(DC) - V IL(AC)max
ΔTF
Setup slew rate
rising signal
=
V IH(AC)min - V REF(DC)
ΔTR
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IS43/46LD16160A
IS43/46LD32800A
Typical Slew Rate – tIH for CA and CS# Relative to Clock
DQS
DQS#
t DS
t DH
t DS
t DH
V DDQ
V IH(AC)min
V IH(DC)min
DC to V REF
region
Typical
slew rate
V REF(DC)
Typical
slew rate
DC to V REF
region
V IL(DC)max
V IL(AC)max
V SSQ
ΔTF
ΔTR
Hold slew rate
falling signal
=
V IH(DC)min - V REF(DC)
ΔTF
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Rev. 00B
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Hold slew rate
rising signal
=
V REF(DC) - V IL(DC)max
ΔTR
103
IS43/46LD16160A
IS43/46LD32800A
Tangent Line: tIS for CA and /CS Relative to Clock
DQS
DQS#
t DS
t DS
t DH
t DH
V DDQ
V IH(AC)min
t VAC
Typical
line
V REF to AC
region
V IH(DC)min
Tangent line
V REF(DC)
Tangent line
V IL(DC)max
Typical line
V REF to AC
region
V IL(AC)max
ΔTR
ΔTF
VSSQ
Setup slew rate
falling signal
104
=
tangent line [V
REF(DC)
ΔTF
- V IL(AC)max ]
tangent line [V
Setup slew rate
=
rising signal
IH(AC)min
- V REF(DC) ]
ΔTR
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IS43/46LD16160A
IS43/46LD32800A
Tangent Line: tIH for CA and /CS Relative to Clock
DQS
DQS#
t DS
t DS
t DH
t DH
V DDQ
V IH(AC)min
Nominal
line
V IH(DC)min
DC to V REF
region
Tangent
line
V REF(DC)
Tangent
line
Typical line
V IL(DC)max
DC to V REF
region
V IL(DC)max
V SSQ
ΔTR
Hold slew rate
falling signal
=
tangent line [V IH(DC)min - V REF(DC) ]
ΔTF
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Rev. 00B
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ΔTF
Hold slew rate
rising signal
=
tan gent lin e [V REF(DC) - V IL(DC )max ]
ΔTR
105
IS43/46LD16160A
IS43/46LD32800A
Data Setup, Hold, and Slew Rate Derating
For all input signals (DQ, DM) calculate the total required setup time (tDS) and hold time (tDH) by
adding the data sheet tDS(base) and tDH(base) values to the tDS and tDH derating values, respectively . Example: tDS = tDS(base) + tDS.
The typical tDS slew rate for a rising signal is defined as the slew rate between the last crossing
of VREF(DC) and the first crossing of VIH(AC)min. The typical tDS slew rate for a falling signal is
defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)
max .
If the actual signal is consistently earlier than the typical slew rate , the area shaded gray between
the VREF(DC) region and the AC region, use the typical slew rate for the derating value. If the actual signal is later than the typical slew rate line anywhere between the shaded VREF(DC) region
and the AC region, the slew rate of a tangent line to the actual signal from the AC level to the DC
level is used for the derating value .
The typical tDH slew rate for a rising signal is defined as the slew rate between the last crossing of
VIL(DC)max and the first crossing of VREF(DC). The typical tDH slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC)
If the actual signal is consistently later than the typical slew rate line between the shaded DC-levelto-VREF(DC) region, use the typical slew rate for the derating value. If the actual signal is earlier
than the typical slew rate line anywhere between shaded DC to- VREF(DC) region, the slew rate of
a tangent line to the actual signal from the DC level to the VREF(DC) level is used for the derating
value .
For a valid transition, the input signal must remain above or below VIH/VIL(AC) for the specified
time, tVAC . The total setup time for slow slew rates could be negative (that is, a valid input signal
may not have reached VIH/VIL(AC) at the time of the rising clock transition). A valid input
signal is still required to complete the transition and reach VIH/VIL(AC).
For slew rates between the values listed in the tables on the following page, the derating values
can be obtained using linear interpolation. Slew rate values are not typically subject to production
testing. They are verified by design and characterization.
Data Setup and Hold Base Values (>400 MHz, 1 V/ns slew rate)
Data Rate
Parameter
Reference
800
667
533
466
t DS (base)
50
130
210
230
V IH /V IL(AC) = V REF(DC) ±220mV
t DH (base)
140
220
300
320
V IH /V IL(DC) = V REF(DC) ±130mV
Note: AC/DC referenced for 1 V/ns DQ, DM slew rate, and 2 V/ns differential DQS/DQS# slew rate.
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Derating Values for AC/DC-based tDS/tDH (AC220) - ΔtDS, ΔtDH derating in [ps], AC/DC-based
˂t DS, ˂t DH derating in ps
DQS, DQS# Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH
DQ, DM
slew
rate
V/ns
2.0
110
65
110
65
110
65
1.5
74
43
73
43
73
43
1.0
0
0
0.9
89
59
0
0
0
0
16
16
32
32
-3
-5
-3
-5
13
11
29
27
45
43
-8
-13
8
3
24
19
40
35
56
55
2
-6
18
10
34
26
50
46
66
78
10
-3
26
13
42
33
58
65
4
-4
20
16
36
48
-7
2
17
34
0.8
0.7
0.6
0.5
0.4
Note: Shaded cells are not supported.
Derating Values for AC/DC-based tDS/tDH (AC300) - tDS, tDH derating in [ps], AC/DC-based
DQS, DQS# Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH ˂t DS ˂t DH
DQ, DM 2.0
slew
1.5
rate V/ns
1.0
0.9
150
100
150
100
150
100
100
67
100
67
100
67
116
83
0
0
0
0
0
0
16
16
32
32
-4
-8
-4
-8
12
8
28
24
44
40
-12
-20
4
-4
20
12
36
28
52
48
-3
-18
13
-2
29
14
45
34
2
-21
18
-5
34
15
50
47
-12
-32
4
-12
20
20
4
-35
-40
-11
-8
0.8
0.7
0.6
0.5
0.4
61
66
Note: Shaded cells are not supported.
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IS43/46LD16160A
IS43/46LD32800A
Required tVAC Above VIH(AC) or Below VIL(AC) for Valid Transition
t VAC at 300mV (ps)
Slew Rate (V/ns)
t VAC at 220mV (ps)
Min
Max
Min
Max
>2.0
75
–
175
–
2.0
57
–
170
–
1.5
50
–
167
–
1.0
38
–
163
–
0.9
34
–
162
–
0.8
29
–
161
–
0.7
22
–
159
–
0.6
13
–
155
–
0.5
0
–
150
–
<0.5
0
–
150
–
Typical Slew Rate and tVAC – tDS for DQ Relative to Strobe
DQS
DQS#
t DS
t DH
t DS
t DH
V DDQ
V IH(AC)min
t VAC
V REF to AC
region
V IH(DC)min
Typical
slew rate
V REF(DC)
Typical
slew rate
V IL(DC)max
V REF to AC
region
V IL(AC)max
V SSQ
ΔTF
Setup slew rate
falling signal
108
ΔTR
=
V REF(DC) - V IL(AC)max
ΔTF
Setup slew rate
rising signal
=
V IH(AC)min - V REF(DC)
ΔTR
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IS43/46LD16160A
IS43/46LD32800A
Typical Slew Rate: tDH for DQ Relative to Strobe
DQS
DQS#
t DS
t DH
t DS
t DH
V DDQ
V IH(AC)min
V IH(DC)min
DC to V REF
region
Typical
slew rate
V REF(DC)
Typical
slew rate
DC to V REF
region
V IL(DC)max
V IL(AC)max
V SSQ
ΔTF
ΔTR
Hold slew rate
falling signal
=
V IH(DC)min - V REF(DC)
ΔTF
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Hold slew rate
rising signal
=
V REF(DC) - V IL(DC)max
ΔTR
109
IS43/46LD16160A
IS43/46LD32800A
Tangent Line: tDS for DQ with Respect to Strobe
DQS
DQS#
t DS
t DS
t DH
t DH
V DDQ
V IH(AC)min
t VAC
Typical
line
V REF to AC
region
V IH(DC)min
Tangent line
V REF(DC)
Tangent line
V IL(DC)max
Typical line
V REF to AC
region
V IL(AC)max
ΔTR
ΔTF
VSSQ
Setup slew rate
falling signal
110
=
tangent line [V
REF(DC)
ΔTF
- V IL(AC)max ]
tangent line [V
Setup slew rate
=
rising signal
IH(AC)min
- V REF(DC) ]
ΔTR
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IS43/46LD16160A
IS43/46LD32800A
Tangent Line: tDH for DQ with Respect to Strobe
DQS
DQS#
t DS
t DS
t DH
t DH
V DDQ
V IH(AC)min
Nominal
line
V IH(DC)min
DC to V REF
region
Tangent
line
V REF(DC)
Tangent
line
Typical line
V IL(DC)max
DC to V REF
region
V IL(DC)max
V SSQ
ΔTR
Hold slew rate
falling signal
=
tangent line [V IH(DC)min - V REF(DC) ]
ΔTF
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ΔTF
Hold slew rate
rising signal
=
tan gent lin e [V REF(DC) - V IL(DC )max ]
ΔTR
111
IS43/46LD16160A
IS43/46LD32800A
IDD Specifications and Conditions
The following definitions and conditions are used in the IDD measurement tables unless stated
otherwise:
• LOW: VIN ≤ VIL(DC)max
• HIGH: VIN ≥ VIH(DC)min
• STABLE: Inputs are stable at a HIGH or LOW level
• SWITCHING: See Tables bellow
Switching for CA Input Signal
CK Rising/
CK#Falling
Cycle
CS#
CK Falling/
CK# Rising
CK Rising/
CK#Falling
CK Falling/
CK# Rising
CK Rising/
CK#Falling
CK Falling/
CK# Rising
CK Rising/
CK#Falling
CK Falling/
CK# Rising
N
N+1
N+2
N+3
HIGH
HIGH
HIGH
HIGH
CA0
H
L
L
L
L
H
H
H
CA1
H
H
H
L
L
L
L
H
CA2
H
L
L
L
L
H
H
H
CA3
H
H
H
L
L
L
L
H
CA4
H
L
L
L
L
H
H
H
CA5
H
H
H
L
L
L
L
H
CA6
H
L
L
L
L
H
H
H
CA7
H
H
H
L
L
L
L
H
CA8
H
L
L
L
L
H
H
H
CA9
H
H
H
L
L
L
L
H
Notes:
1. /CS must always be driven HIGH.
2. For each clock cycle, 50% of the CA bus is changing between HIGH and LOW.
3. The noted pattern (N, N + 1, N + 2, N + 3...) is used continuously during IDD measurement for IDD values that require
switching on the CA bus
112
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Switching for IDD4R
Clock Cycle
Number
Clock
CKE
CS#
Command
CA[2:0]
CA[9:3]
Rising
H
L
N
Read_Rising
HLH
LHLHLHL
All DQ
L
Falling
H
L
N
Read_Falling
LLL
LLLLLLL
L
Rising
H
H
N +1
NOP
LLL
LLLLLLL
H
Falling
H
H
N+1
NOP
HLH
LHLLHLH
L
Rising
H
L
N+2
Read_Rising
HLH
LHLLHLH
H
Falling
H
L
N+2
Read_Falling
LLL
HHHHHHH
H
Rising
H
H
N+3
NOP
LLL
HHHHHHH
H
Falling
H
H
N+3
NOP
HLH
LHLHLHL
L
CA[9:3]
All DQ
Notes:
1. Data strobe (DQS) is changing between HIGH and LOW with every clock cycle.
2. The noted pattern (N, N + 1...) is used continuously during IDD measurement for IDD4R.
Switching for IDD4W
Clock
CKE
CS#
Rising
H
L
Clock Cycle
Number
Command
N
Write_Rising
CA[2:0]
LLH
LHLHLHL
L
Falling
H
L
N
Write_Falling
LLL
LLLLLLL
L
Rising
H
H
N +1
NOP
LLL
LLLLLLL
H
Falling
H
H
N+1
NOP
HLH
LHLLHLH
L
Rising
H
L
N+2
Write_Rising
LLH
LHLLHLH
H
Falling
H
L
N+2
Write_Falling
LLL
HHHHHHH
H
Rising
H
H
N+3
NOP
LLL
HHHHHHH
H
Falling
H
H
N+3
NOP
HLH
LHLHLHL
L
Notes:
1. Data strobe (DQS) is changing between HIGH and LOW with every clock cycle.
2. Data masking (DM) must always be driven LOW.
3. The noted pattern (N, N + 1...) is used continuously during IDD measurement for IDD4R.
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IS43/46LD16160A
IS43/46LD32800A
IDD Specification Parameters and Operating Conditions
Parameter/Condition
Symbol
Operating one bank active-precharge current (SDRAM):
t CK = t CKmin;
t RC = t RCmin; CKE is HIGH; CS# is HIGH between valid commands; CA bus in-
puts are switching; Data bus inputs are stable
t CK = t CKmin; CKE is LOW; CS# is HIGH;
Idle power-down standby current:
All banks are idle; CA bus inputs are switching; Data bus inputs are stable
Idle power-down standby current with clock stop:
CK = LOW, CK# =
HIGH; CKE is LOW; CS# is HIGH; All banks are idle; CA bus inputs are stable;
Data bus inputs are stable
t CK = t CKmin; CKE is HIGH; CS# is
Idle non-power-down standby current:
HIGH; All banks are idle; CA bus inputs are switching; Data bus inputs are stable
Idle non-power-down standby current with clock stopped:
CK = LOW;
CK# = HIGH; CKE is HIGH; CS# is HIGH; All banks are idle; CA bus inputs are
stable; Data bus inputs are stable
t CK = t CKmin; CKE is LOW; CS# is
Active power-down standby current:
HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are
stable
Active power-down standby current with clock stop:
CK = LOW, CK# =
HIGH; CKE is LOW; CS# is HIGH; One bank is active; CA bus inputs are stable;
Data bus inputs are stable
t CK = t CKmin; CKE is HIGH; CS#
Active non-power-down standby current:
is HIGH; One bank is active; CA bus inputs are switching; Data bus inputs are
stable
Active non-power-down standby current with clock stopped:
CK =
LOW, CK# = HIGH CKE is HIGH; CS# is HIGH; One bank is active; CA bus inputs
are stable; Data bus inputs are stable
t CK = t CKmin; CS# is HIGH between valid
Operating burst READ current:
commands; One bank is active; BL = 4; RL = RL (MIN); CA bus inputs are
switching; 50% data change each burst transfer
t CK = t CKmin; CS# is HIGH between valid
Operating burst WRITE current:
commands; One bank is active; BL = 4; WL = WLmin; CA bus inputs are switching; 50% data change each burst transfer
t CK = t CKmin; CKE is HIGH between valid
All-bank REFRESH burst current:
commands; t RC = t RFCabmin; Burst refresh; CA bus inputs are switching; Data
bus inputs are stable
114
Power Supply
I DD01
V DD1
I DD02
V DD2
I DD0,in
V DDCA , V DDQ
I DD2P1
V DD1
I DD2P2
V DD2
I DD2P,in
V DDCA , V DDQ
I DD2PS1
V DD1
I DD2PS2
V DD2
I DD2PS,in
V DDCA , V DDQ
I DD2N1
V DD1
I DD2N2
V DD2
I DD2N,in
V DDCA , V DDQ
I DD2NS1
V DD1
I DD2NS2
V DD2
I DD2NS,in
V DDCA , V DDQ
I DD3P1
V DD1
I DD3P2
V DD2
I DD3P,in
V DDCA , V DDQ
I DD3PS1
V DD1
I DD3PS2
V DD2
I DD3PS,in
V DDCA , V DDQ
I DD3N1
V DD1
I DD3N2
V DD2
I DD3N,in
V DDCA , V DDQ
I DD3NS1
V DD1
I DD3NS2
V DD2
I DD3NS,in
V DDCA , V DDQ
I DD4R1
V DD1
I DD4R2
V DD2
I DD4R,in
V DDCA
I DD4RQ
V DDQ
I DD4W1
V DD1
I DD4W2
V DD2
I DD4W,in
V DDCA , V DDQ
I DD51
V DD1
I DD52
V DD2
I DD5,in
V DDCA , V DDQ
Notes
4
4
4
4
4
4
4
4
4
5
4
4
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IS43/46LD16160A
IS43/46LD32800A
Parameter/Condition
Symbol
t CK = t CKmin; CKE is HIGH between
All-bank REFRESH average current:
valid commands; t RC = t REFI; CA bus inputs are switching; Data bus inputs are
stable
t CK = t CKmin; CKE is HIGH between
Per-bank REFRESH average current:
valid commands; t RC = t REFI/8; CA bus inputs are switching; Data bus inputs
are stable
Self refresh current (–25˚C to +85˚C): CK = LOW, CK# = HIGH; CKE is LOW;
CA bus inputs are stable; Data bus inputs are stable; Maximum 1x self refresh
rate
Self refresh current (+85˚C to +105˚C): CK = LOW, CK# = HIGH; CKE is
LOW; CA bus inputs are stable; Data bus inputs are stable
Deep power-down current: CK = LOW, CK# = HIGH; CKE is LOW; CA bus inputs are stable; Data bus inputs are stable
I DD5AB1
Power Supply
Notes
V DD1
I DD5AB2
V DD2
I DD5AB,in
V DDCA , V DDQ
I DD5PB1
V DD1
I DD5PB2
V DD2
I DD5PB,in
V DDCA , V DDQ
4
I DD61
V DD1
6
I DD62
V DD2
6
I DD6,in
V DDCA , V DDQ
4, 6
I DD6ET1
V DD1
6, 7
I DD6ET2
V DD2
6, 7
I DD6ET,in
V DDCA , V DDQ
4, 6, 7
I DD81
V DD1
7
4
I DD82
V DD2
7
I DD8,in
V DDCA , V DDQ
4, 7
Notes:
1. Published IDD values are the maximum of the distribution of the arithmetic mean.
2. IDD current specifications are tested after the device is properly initialized.
3. The 1x self refresh rate is the rate at which the device is refreshed internally during self refresh, before going into the extended
temperature range.
4. Measured currents are the summation of VDDQ and VDDCA.
5. Guaranteed by design with output reference load and RON = 40 ohm.
6. This is the general definition that applies to full-array SELF REFRESH).
7. IDD6ET and IDD8 are typical values, are sampled only, and are not tested.
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IS43/46LD16160A
IS43/46LD32800A
IDD SPECIFICATIONS
VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V
Speed Grade
Parameter
Supply
-18
-25
-3
Unit
IDD01
VDD1
40
40
40
mA
IDD02
VDD2
40
40
40
IDD0,in
VDDCA + VDDQ
10
10
10
IDD2P1
VDD1
1
1
1
IDD2P2
VDD2
1
1
1
IDD2P,in
VDDCA + VDDQ
0.1
0.1
0.1
IDD2PS1
VDD1
1
1
1
IDD2PS2
VDD2
1
1
1
IDD2PS,in
VDDCA + VDDQ
0.1
0.1
0.1
IDD2N1
VDD1
2
2
2
IDD2N2
VDD2
45
45
45
IDD2N,in
VDDCA + VDDQ
10
10
10
IDD2NS1
VDD1
2
2
2
IDD2NS2
VDD2
35
35
35
IDD2NS,in
VDDCA + VDDQ
10
10
10
IDD3P1
VDD1
1.5
1.5
1.5
IDD3P2
VDD2
10
10
10
IDD3P,in
VDDCA + VDDQ
0.1
0.1
0.1
IDD3PS1
VDD1
1.5
1.5
1.5
IDD3PS2
VDD2
10
10
10
IDD3PS,in
VDDCA + VDDQ
0.1
0.1
0.1
IDD3N1
VDD1
5
5
5
IDD3N2
VDD2
45
45
45
IDD3N,in
VDDCA + VDDQ
10
10
10
IDD3NS1
VDD1
5
5
5
IDD3NS2
VDD2
25
25
25
IDD3NS,in
VDDCA + VDDQ
10
10
10
IDD4R1
VDD1
5
5
5
IDD4R2
VDD2
250
210
180
IDD4R,in
VDDCA
10
10
10
IDD4W1
VDD1
5
5
5
IDD4W2
VDD2
180
150
120
IDD4W,in
VDDCA + VDDQ
30
30
30
IDD51
VDD1
70
70
70
IDD52
VDD2
130
130
130
IDD5,in
VDDCA + VDDQ
10
10
10
116
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Integrated Silicon Solution, Inc. — www.issi.com
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IS43/46LD16160A
IS43/46LD32800A
IDD SPECIFICATIONS (Continued)
VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V
VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V
Parameter
Parameter
IDD5PB1
IDD5PB1
IDD5PB2
IDD5PB2
IDD5PB,in
IDD5PB,in
IDD5AB1
IDD5AB1
IDD5AB2
IDD5AB2
IDD5AB,in
IDD5AB,in
IDD61
IDD61
IDD62
IDD62
IDD6,in
IDD6,in
IDD81
IDD81
IDD82
IDD82
IDD8,in
IDD8,in
Supply
Supply
VDD1
VDD1
VDD2
VDD2
VDDCA + VDDQ
VDDCA + VDDQ
VDD1
VDD1
VDD2
VDD2
VDDCA + VDDQ
VDDCA + VDDQ
VDD1
VDD1
VDD2
VDD2
VDDCA + VDDQ
VDDCA + VDDQ
VDD1
VDD1
VDD2
VDD2
VDDCA + VDDQ
VDDCA + VDDQ
-18
-18
5
5
50
50
10
10
5
5
50
50
10
10
2
2
2
2
0.1
0.1
70
70
150
150
20
20
Speed Grade
Speed Grade
-25
-3
-25
-3
5
5
5
5
50
50
50
50
10
10
10
10
5
5
5
5
50
50
50
50
10
10
10
10
2
2
2
2
2
2
2
2
0.1
0.1
0.1
0.1
70
70
70
70
150
150
150
150
20
20
20
20
Unit
Unit
mA
mA
mA
mA
mA
mA
μA
μA
IDD6 Partial-Array Self Refresh Current
VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V
VDD2, VDDQ, VDDCA = 1.14–1.30V; VDD1 = 1.70–1.95V
PASR
Supply
PASR
Supply
Full array
VDD1
Full array
VDD1
VDD2
VDD2
VDDi
VDDi
1/2 array
VDD1
1/2 array
VDD1
VDD2
VDD2
VDDi
VDDi
1/4 array
VDD1
1/4 array
VDD1
VDD2
VDD2
VDDi
VDDi
1/8 array
VDD1
1/8 array
VDD1
VDD2
VDD2
VDDi
VDDi
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Value
Value
2
2
2
2
0.1
0.1
1.6
1.6
1.6
1.6
0.1
0.1
1.4
1.4
1.4
1.4
0.1
0.1
1.2
1.2
1.2
1.2
0.1
0.1
Unit
Unit
mA
mA
117
IS43/46LD16160A
IS43/46LD32800A
VREF Tolerances
The DC tolerance limits and AC noise limits for the reference voltages VREFCA and VREFDQ are
illustrated below. This figure shows a valid reference voltage VREF(t) as a function of time. VDD is
used in place of VDDCA for VREFCA, and VDDQ for VREFDQ. VREF(DC) is the linear average of
VREF(t) over a very long period of time (for example, 1 second) and is specified as a fraction of the
linear average of VDDQ or VDDCA, also over a very long period of time (for example, 1 second).
This average must meet the MIN/MAX requirements in Table of Single-Ended AC and DC Input
Levels for CA and CS_n Inputs. Additionally, VREF(t) can temporarily deviate from VREF(DC)
by no more than ±1% VDD. VREF(t) cannot track noise on VDDQ or VDDCA if doing so would
force VREF outside these specifications.
VREF DC Tolerance and VREF AC Noise Limits
V DD
Voltage
V REF(AC) noise
V REF(DC)
V REF(t)
V REF(DC)max
V DD/2
V REF(DC)min
V SS
Time
The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC), and
VIL(DC) are dependent on VREF.
VREF DC variations affect the absolute voltage a signal must reach to achieve a valid HIGH or
LOW, as well as the time from which setup and hold times are measured. When VREF is outside
the specified levels, devices will function correctly with appropriate timing deratings as long as:
• VREF is maintained between 0.44 x VDDQ (or VDDCA) and 0.56 x VDDQ (or VDDCA), and
• the controller achieves the required single-ended AC and DC input levels from instantaneous
VREF .
System timing and voltage budgets must account for VREF deviations outside this range.
The setup/hold specification and derating values must include time and voltage associated with
VREF AC noise. Timing and voltage effects due to AC noise on VREF up to the specified limit
(±1% VDD) are included in LPDDR2 timings and their associated deratings.
118
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IS43/46LD16160A
IS43/46LD32800A
Input Signal
LPDDR2 466-800 Input Signal
1.550V
Minimum V
0.820V
0.730V
V IH(AC)
V IH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
0.470V
0.380V
V IL(DC)
V IL(AC)
IL
and V
IH
levels
V IL and V
IH
levels with ringback
V DD + 0.35V
narrow pulse width
1.200V
V DD
0.820V
V IH(AC)
0.730V
V IH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
V REF
V REF
V REF
V REF
0.470V
V IL(DC)
0.380V
V IL(AC)
0.000V
V SS
–0.350V
+ AC noise
+ DC error
- DC error
- AC noise
V SS - 0.35V
narrow pulse width
Notes:
1. Numbers reflect typical values.
2. For CA[9:0], CK, CK#, and CS# VDD stands for VDDCA. For DQ, DM, DQS, and DQS#, VDD stands for VDDQ.
3. For CA[9:0], CK, CK#, and CS# VSS stands for VSSCA. For DQ, DM, DQS, and DQS#, VSS stands for VSSQ.
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IS43/46LD16160A
IS43/46LD32800A
LPDDR2-200 to LPDDR2-400 Input Signal
1.550V
Minimum V IL and V IH levels
0.900V
0.800V
V IH(AC)
V IH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
0.400V
0.300V
V IL(DC)
V IL(AC)
V IL and V IH levels with ringback
V DD + 0.35V
narrow pulse width
1.200V
V DD
0.900V
V IH(AC)
0.800V
V IH(DC)
0.624V
0.612V
0.600V
0.588V
0.576V
V REF
V REF
V REF
V REF
0.400V
V IL(DC)
0.300V
V IL(AC)
0.000V
V SS
–0.350V
+ AC noise
+ DC error
- DC error
- AC noise
V SS - 0.35V
narrow pulse width
Notes:
1. Numbers reflect typical values.
2. For CA[9:0], CK, CK#, and CS# VDD stands for VDDCA. For DQ, DM, DQS, and DQS#, VDD stands for VDDQ.
3. For CA[9:0], CK, CK#, and CS# VSS stands for VSSCA. For DQ, DM, DQS, and DQS#, VSS stands for VSSQ.
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AC and DC Logic Input Measurement Levels for Differential Signals
Differential AC Swing Time and tDVAC
t DVAC
V IH,di ff(AC)min
Differential Voltage
V IH,di ff(DC)min
CK, CK#
DQS, DQS#
0.0
V IH,di ff(DC)max
t DVAC
1/2 cycle
V IH,di ff(AC)max
Time
Differential AC and DC Input Levels
LPDDR2-800 to LPDDR2-466
Symbol
Parameter
V IH,diff(AC)
Differential input
HIGH AC
V IL,diff(AC)
Differential input
LOW AC
V IH,diff(DC)
Differential input
HIGH
V IL,diff(DC)
Differential input
LOW
Min
2 × (V
IH(AC)
Max
- V REF )
Note 1
2 × (V
IH(DC)
LPDDR2-400 to LPDDR2-200
Note 1
2 × (V
- V REF )
Note 1
REF
- V IL(AC) )
Note 1
2 × (V
REF
Min
2 × (V
- V IL(DC) )
IH(AC)
- V REF )
Note 1
2 × (V
IH(DC)
2 × (V
- V REF )
Note 1
Max
Unit
Notes
Note 1
V
2
V
2
V
3
V
3
REF
- V IL(AC) )
Note 1
2 × (V
REF
- V IL(DC) )
Notes:
1. These values are not defined, however the single-ended signals CK, CK#, DQS, and DQS# must be within the respective limits
(VIH(DC)max, VIL(DC)min) for single-ended signals and must comply with the specified limitations for overshoot and undershoot.
2. For CK and CK#, use VIH/VIL(AC) of CA and VREFCA; for DQS and DQS#, use VIH/VIL(AC) of DQ and VREFDQ. If a reduced
AC HIGH or AC LOW is used for a signal group, the reduced voltage level also applies.
3. Used to define a differential signal slew rate.
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CK/CK# and DQS/DQS# Time Requirements Before Ringback (tDVAC)
t DVAC (ps) at V
Slew Rate (V/ns)
IH /V ILdiff(AC)
t DVAC (ps) at V
=
IH /V ILdiff(AC)
440mV
600mV
Min
Min
> 4.0
175
75
4.0
170
57
3.0
167
50
2.0
163
38
1.8
162
34
1.6
161
29
1.4
159
22
1.2
155
13
1.0
150
0
< 1.0
150
0
=
Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK, CK#, DQS, and DQS#) must also comply
with certain requirements for single-ended signals.
CK and CK# must meet VSEH(AC)min/VSEL(AC)max in every half cycle. DQS, DQS# must meet
VSEH(AC)min/VSEL(AC)max in every half cycle preceding and following a valid transition.
The applicable AC levels for CA and DQ differ by speed bin.
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Single-Ended Requirements for Differential Signals
V DDCA or V DDQ
V SEH(AC)
Differential Voltage
V SEH(AC)min
V DDCA /2 or V DDQ /2
CK or DQS
V SEL(AC)max
V SEL(AC)
V SSCA or V SSQ
Time
Note that while CA and DQ signal requirements are referenced to VREF, the single-ended components of differential signals also have a requirement with respect to VDDQ/2 for DQS, and VDDCA/2 for CK.
The transition of single-ended signals through the AC levels is used to measure setup time.
For single-ended components of differential signals, the requirement to reach VSEL(AC)max or
VSEH(AC)min has no bearing on timing. This requirement does, however, add a restriction on the
common mode characteristics of these signals.
Single-Ended Levels for CK, CK#, DQS, DQS#
LPDDR2-800 to LPDDR2-466
Symbol
V SEH(AC)
V SEL(AC)
Parameter
LPDDR2-400 to LPDDR2-200
Min
Max
Min
Max
Unit
Notes
Single-ended HIGH
level for strobes
(V DDQ /2) + 0.220
Note 1
(V DDQ /2) + 0.300
Note 1
V
2, 3
Single-ended HIGH
level for CK, CK#
(V DDCA /2) + 0.220
Note 1
(V DDCA /2) + 0.300
Note 1
V
2, 3
Single-ended LOW
level for strobes
Note 1
(V DDQ /2) - 0.220
Note 1
(V DDQ /2) + 0.300
V
2, 3
Single-ended LOW
level for CK, CK#
Note 1
(V DDCA /2) - 0.220
Note 1
(V DDCA /2) + 0.300
V
2, 3
Notes:
1. These values are not defined, however the single-ended signals CK, CK#, DQS, and DQS# must be within the respective limits
(VIH(DC)max, VIL(DC)min) for single-ended signals and must comply with the specified limitations for overshoot and undershoot.
2. For CK and CK#, use VIH/VIL(AC) of CA and VREFCA; for DQS and DQS#, use VIH/VIL(AC) of DQ and VREFDQ. If a reduced
AC HIGH or AC LOW is used for a signal group, the reduced voltage level also applies.
3. Used to define a differential signal slew rate.
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Differential Input Crosspoint Voltage
To ensure tight setup and hold times as well as output skew parameters with respect to clock and
strobe, each crosspoint voltage of differential input signals (CK, CK#, DQS, and DQS#) must meet
the specifications in the table "Single-Ended Levels" (page 124). The differential input crosspoint
voltage (VIX) is measured from the actual crosspoint of the true signal and complement to the midlevel between VDD and VSS.
VIX Definition
V DDCA , V DDQ
V DDCA , V DDQ
CK#, DQS#
CK#, DQS#
X
V IX
V IX
V DDCA /2,
V DDQ /2
X
V DDCA /2,
X
V DDQ /2
V IX
X
V IX
CK, DQS
CK, DQS
V SSCA , V SSQ
V SSCA , V SSQ
Crosspoint Voltage for Differential Input Signals (CK, CK#, DQS, DQS#)
LPDDR2-800 to LPDDR2-200
Symbol
Parameter
Min
Max
Unit
Notes
V IXCA(AC)
Differential input crosspoint voltage relative to V DDCA /2 for CK and CK#
–120
120
mV
1, 2
V IXDQ(AC)
Differential input crosspoint voltage relative to V DDQ /2 for DQS and DQ#
–120
120
mV
1, 2
Notes:
1. The typical value of VIX(AC) is expected to be about 0.5 × VDD of the transmitting device, and it is expected to track variations
in VDD. VIX(AC) indicates the voltage at which differential input signals must cross.
2. For CK and CK#, VREF = VREFCA(DC). For DQS and DQS#, VREF = VREFDQ(DC).
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Input Slew Rate
Differential Input Slew Rate Definition
Measured
Description
1
From
To
Defined by
Differential input slew rate for rising
edge (CK/CK# and DQS/DQS#)
V IL,diff,max
V IH,diff,min
[V IH,diff,min - V IL,diff,max ] / ˂TR diff
Differential input slew rate for falling
edge (CK/CK# and DQS/DQS#)
V IH,diff,min
V IL,diff,max
[V IH,diff,min - V IL,diff,max ] / ˂TF diff
Note: The differential signals (CK/CK# and DQS/DQS#) must be linear between these thresholds.
Differential Input Slew Rate Definition for CK, CK#, DQS, and DQS#
ΔTR diff
Differential Input Voltage
ΔTF diff
V IH,di ff,min
0
V IL,di ff,max
Time
Output Characteristics and Operating Conditions
Single-Ended AC and DC Output Levels
Symbol
Parameter
Value
Unit
Notes
V OH(AC)
AC output HIGH measurement level (for output slew rate)
V REF + 0.12
V
V OL(AC)
AC output LOW measurement level (for output slew rate)
V REF - 0.12
V
V OH(DC)
DC output HIGH measurement level (for I-V curve linearity)
0.9 x V
DDQ
V
1
V OL(DC)
DC output LOW measurement level (for I-V curve linearity)
0.1 x V
DDQ
V
2
I OZ
MMpupd
Output leakage current (DQ, DM, DQS, DQS#); DQ,
DQS, DQS# are disabled; 0V
ื V OUT ื V DDQ
MIN
–5
˩A
MAX
+5
˩A
Delta output impedance between pull-up and pulldown for DQ/DM
MIN
–15
%
MAX
+15
%
Notes:
1. IOH = –0.1mA.
2. IOL = 0.1mA.
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Differential AC and DC Output Levels
Symbol
Parameter
Value
Unit
V OHdiff(AC)
AC differential output HIGH measurement level (for output SR)
+ 0.2 x V
DDQ
V
V OLdiff(AC)
AC differential output LOW measurement level (for output SR)
- 0.2 x V
DDQ
V
Single-Ended Output Slew Rate
With the reference load for timing measurements, the output slew rate for falling and rising edges is
defined and measured between VOL(AC) and VOH(AC) for single-ended signals.
Differential Input Slew Rate Definition
Measured
Description
From
To
Defined by
Single-ended output slew rate for rising edge
V OL(AC)
V OH(AC)
[V OH(AC) - V OL(AC) ] / ˂TR SE
Single-ended output slew rate for falling edge
V OH(AC)
V OL(AC)
[V OH(AC) - V OL(AC) ] / ˂TF SE
Note: Output slew rate is verified by design and characterization and may not be subject to production testing.
Single-Ended Output Slew Rate Definition
Single-Ended Output Voltage (DQ)
ΔTF SE
126
ΔTR SE
V OH(AC)
V REF
V OL(AC)
Time
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Single-Ended Output Slew Rate
Value
Parameter
Symbol
Min
Max
Unit
Single-ended output slew rate (output impedance = 40
˖±30%)
SRQ SE
1.5
3.5
V/ns
Single-ended output slew rate (output impedance = 60
˖±30%)
SRQ SE
1.0
2.5
V/ns
0.7
1.4
–
Output slew-rate-matching ratio (pull-up to pull-down)
Notes:
1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = singleended signals
2. Measured with output reference load.
3. The ratio of pull-up to pull-down slew rate is specified for the same temperature and voltage over the entire temperature and
voltage range. For a given output, the ratio represents the maximum difference between pull-up and pull-down drivers due to
process variation.
4. The output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC).
5. Slew rates are measured under typical simultaneous switching output (SSO) conditions, with one-half of DQ signals per data
byte driving HIGH and one-half of DQ signals per data byte driving LOW.
Differential Output Slew Rate
With the reference load for timing measurements, the output slew rate for falling and rising edges is
defined and measured between VOL,diff(AC) and VOH,diff(AC) for differential signals.
Differential Output Slew Rate Definition
Value
Parameter
Differential output slew rate (output impedance = 40
˖±30%)
Symbol
Min
Max
Unit
SRQ diff
3.0
7.0
V/ns
Note: Output slew rate is verified by design and characterization and may not be subject to production testing.
Differential Output Slew Rate Definition
Differential Output Voltage (DQS, DQS#)
ΔTF diff
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ΔTR diff
V OH,di ff(AC)
0
V OL,di ff(AC)
Time
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Value
Parameter
Symbol
Min
Value
Max
Unit
Parameter
Differential output slew rate (output impedance = 40
˖±30%)
Symbol
SRQ diff
Min
3.0
Max
7.0
Unit
V/ns
Differential output slew rate (output impedance = 60
˖±30%)
SRQ diff
2.0
5.0
V/ns
Notes:
1. Definitions: SR = slew rate; Q = output (similar to DQ = data-in, data-out); SE = singleended signals.
2. Measured with output reference load.
3. The output slew rate for falling and rising edges is defined and measured between VOL(AC) and VOH(AC).
4. Slew rates are measured under typical simultaneous switching output (SSO) conditions, with one-half of DQ signals per data
byte driving HIGH and one-half of DQ signals per data byte driving LOW.
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AC Overshoot/Undershoot Specification
Applies for CA[9:0], CS#, CKE, CK, CK#, DQ, DQS, DQS#, DM
Parameter
800
667
533
400
333
Unit
Maximum peak amplitude provided for overshoot area
0.35
0.35
0.35
0.35
0.35
V
Maximum peak amplitude provided for undershoot area
0.35
0.35
0.35
0.35
0.35
V
Maximum area above VDD 1
0.20
0.24
0.30
0.40
0.48
V/ns
Maximum area below VSS2
0.20
0.24
0.30
0.40
0.48
V/ns
Notes:
1. VDD stands for VDDCA for CA[9:0], CK, CK#, CS#, and CKE. VDD stands for VDDQ for DQ, DM, DQS, and DQS#.
2. VSS stands for VSSCA for CA[9:0], CK, CK#, CS#, and CKE. VSS stands for VSSQ for DQ, DM, DQS, and DQS#.
Overshoot and Undershoot Definition
Volts (V)
Maximum amplitude
V DD
Overshoot area
Time (ns)
V SS
Maximum amplitude
Undershoot area
Notes:
1. VDD stands for VDDCA for CA[9:0], CK, CK#, CS#, and CKE. VDD stands for VDDQ for DQ, DM, DQS, and DQS#.
2. VSS stands for VSSCA for CA[9:0], CK, CK#, CS#, and CKE. VSS stands for VSSQ for DQ, DM, DQS, and DQS#.
HSUL_12 Driver Output Timing Reference Load
The timing reference loads are not intended as a precise representation of any particular system
environment or a depiction of the actual load presented by a production tester. System designers
should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to their production test conditions, generally with one or more coaxial transmission lines terminated at the tester electronics.
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HSUL_12 Driver Output Reference Load for Timing and Slew Rate
LPDDR2
V REF
0.5 × V DDQ
50Ω
Output
V TT = 0.5 × V DDQ
C LOAD = 5pF
Note: All output timing parameter values (tDQSCK, tDQSQ, tQHS, tHZ, tRPRE etc.) are reported with respect to this reference
load. This reference load is also used to report slew rate.
Output Driver Impedance
The output driver impedance is selected by a mode register during initialization. The selected
value is able to maintain the tight tolerances specified if proper ZQ calibration is performed. Output
specifications refer to the default output driver unless specifically
stated otherwise. A functional representation of the output buffer is shown in bellow. The output
driver impedance RON is defined by the value of the external reference resistor RZQ as follows:
RONPU = (VDDQ – VOUT) / ABS(IOUT)
When RONPD is turned off.
RONPD = VOUT / ABS(IOUT)
When RONPU is turned off.
Output Driver
Chip in drive mode
Chip in Drive Mode
Output Driver
V DDQ
To other
circuitry
(RCV, etc.)
I PU
R ONPU
R ONPD
I PD
130
I OUT
DQ
V OUT
V SSQ
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Output Driver Impedance Characteristics with ZQ Calibration
Output driver impedance is defined by the value of the external reference resistor RZQ. Typical
RZQ is 240 ohms.
Output Driver DC Electrical Characteristics with ZQ Calibration
R ONnom
34.3˖
40.0˖
48.0˖
60.0˖
80.0˖
120.0˖
Mismatch between
pull-up and pull-down
Resistor
V OUT
Min
Typ
Max
Unit
R ON34PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /7
R ON34PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /7
R ON40PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /6
R ON40PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /6
R ON48PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /5
R ON48PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /5
R ON60PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /4
R ON60PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /4
R ON80PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /3
R ON80PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /3
R ON120PD
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /2
R ON120PU
0.5 × V
DDQ
0.85
1.00
1.15
R ZQ /2
+15.00
%
MM PUPD
–15.00
Notes
5
Notes:
1. Applies across entire operating temperature range after calibration.
2. RZQ = 240Ω.
3. The tolerance limits are specified after calibration, with fixed voltage and temperature. For behavior of the tolerance limits if
temperature or voltage changes after calibration.
4. Pull-down and pull-up output driver impedances should be calibrated at 0.5 x VDDQ.
5. Measurement definition for mismatch between pull-up and pull-down, MMPUPD:
Measure RONPU and RONPD, both at 0.5 × VDDQ:
MMPUPD =( ( RONPU – RONPD ) / RON,nom ) × 100
For example, with MMPUPD (MAX) = 15% and RONPD = 0.85, RONPU must be less than 1.0.
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Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen
Output Driver Sensitivity Definition
Symbol
Parameter
Min
Max
Unit
R ONPD
R ON temperature sensitivity
0.00
0.75
%/˚C
R ONPU
R ON voltage sensitivity
0.00
0.20
%/mV
Notes:
1. ΔT = T - T (at calibration). ΔV = V - V (at calibration).
2. dRONdT and dRONdV are not subject to production testing; they are verified by design and characterization.
Output Driver Temperature and Voltage Sensitivity
Symbol
Parameter
Min
Max
Unit
R ONPD
R ON temperature sensitivity
0.00
0.75
%/˚C
R ONPU
R ON voltage sensitivity
0.00
0.20
%/mV
Output Impedance Characteristics Without ZQ Calibration
Output driver impedance is defined by design and characterization as the default setting.
Output Driver DC Electrical Characteristics Without ZQ Calibration
RON
nom
34.3˖
40.0˖
48.0˖
60.0˖
80.0˖
120.0˖
Resistor
V OUT
Min
Typ
Max
Unit
R ON34PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /7
R ON34PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /7
R ON40PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /6
R ON40PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /6
R ON48PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /5
R ON48PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /5
R ON60PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /4
R ON60PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /4
R ON80PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /3
R ON80PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /3
R ON120PD
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /2
R ON120PU
0.5 × V
DDQ
0.70
1.00
1.30
R ZQ /2
Notes:
1. Applies across entire operating temperature range, without calibration.
2. RZQ = 240Ω
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I-V Curves
R ON = 240˖(R ZQ )
Pull-Down
Current (mA) / R
Default Value after
ZQRESET
Voltage (V)
Min (mA)
Max (mA)
Pull-Up
ON
(ohms)
Current (mA) / R
With Calibration
Min (mA)
Max (mA)
Default Value after
ZQRESET
Min (mA)
Max (mA)
ON
(ohms)
With Calibration
Min (mA)
Max (mA)
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.05
0.19
0.32
0.21
0.26
–0.19
–0.32
–0.21
–0.26
0.10
0.38
0.64
0.40
0.53
–0.38
–0.64
–0.40
–0.53
0.15
0.56
0.94
0.60
0.78
–0.56
–0.94
–0.60
–0.78
0.20
0.74
1.26
0.79
1.04
–0.74
–1.26
–0.79
–1.04
0.25
0.92
1.57
0.98
1.29
–0.92
–1.57
–0.98
–1.29
0.30
1.08
1.86
1.17
1.53
–1.08
–1.86
–1.17
–1.53
0.35
1.25
2.17
1.35
1.79
–1.25
–2.17
–1.35
–1.79
0.40
1.40
2.46
1.52
2.03
–1.40
–2.46
–1.52
–2.03
0.45
1.54
2.74
1.69
2.26
–1.54
–2.74
–1.69
–2.26
0.50
1.68
3.02
1.86
2.49
–1.68
–3.02
–1.86
–2.49
0.55
1.81
3.30
2.02
2.72
–1.81
–3.30
–2.02
–2.72
0.60
1.92
3.57
2.17
2.94
–1.92
–3.57
–2.17
–2.94
0.65
2.02
3.83
2.32
3.15
–2.02
–3.83
–2.32
–3.15
0.70
2.11
4.08
2.46
3.36
–2.11
–4.08
–2.46
–3.36
0.75
2.19
4.31
2.58
3.55
–2.19
–4.31
–2.58
–3.55
0.80
2.25
4.54
2.70
3.74
–2.25
–4.54
–2.70
–3.74
0.85
2.30
4.74
2.81
3.91
–2.30
–4.74
–2.81
–3.91
0.90
2.34
4.92
2.89
4.05
–2.34
–4.92
–2.89
–4.05
0.95
2.37
5.08
2.97
4.23
–2.37
–5.08
–2.97
–4.23
1.00
2.41
5.20
3.04
4.33
–2.41
–5.20
–3.04
–4.33
1.05
2.43
5.31
3.09
4.44
–2.43
–5.31
–3.09
–4.44
1.10
2.46
5.41
3.14
4.52
–2.46
–5.41
–3.14
–4.52
1.15
2.48
5.48
3.19
4.59
–2.48
–5.48
–3.19
–4.59
1.20
2.50
5.55
3.23
4.65
–2.50
–5.55
–3.23
–4.65
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Output Impedance = 240 Ohms, I-V Curves After ZQRESET
6
PD (MAX)
PD (MIN)
PU MAX)
4
PU (MIN)
mA
2
0
–2
–4
–6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Voltage
134
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IS43/46LD32800A
Output Impedance = 240 Ohms, I-V Curves After Calibration
6
PD (MAX)
PD (MIN)
PU MAX)
4
PU (MIN)
mA
2
0
–2
–4
–6
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Voltage
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Clock Specification
The specified clock jitter is a random jitter with Gaussian distribution. Input clocks violating minimum or maximum values may result in device malfunction.
Definitions and Calculations
Symbol
Description
t CK(avg) and
The average clock period across any consecutive
200-cycle window. Each clock period is calculated
from rising clock edge to rising clock edge.
nCK
Calculation
Notes
N
Σ t CK j /N
t CK(avg) =
j=1
Where N = 200
Unit t CK(avg) represents the actual clock average
t CK(avg)of the input clock under operation. Unit
nCK represents one clock cycle of the input clock,
counting from actual clock edge to actual clock
edge.
t CK(avg)can change no more than ±1% within a
100-clock-cycle window, provided that all jitter
and timing specifications are met.
t CK(abs)
The absolute clock period, as measured from one
rising clock edge to the next consecutive rising
clock edge.
t CH(avg)
The average HIGH pulse width, as calculated
across any 200 consecutive HIGH pulses.
1
N
t CH(avg) =
Σ t CH
j=1
j
/ ( N × t CK(avg))
Where N = 200
t CL(avg)
The average LOW pulse width, as calculated
across any 200 consecutive LOW pulses.
N
t CL(avg) =
Σ t CL
j=1
j
/(N × t CK(avg))
Where N = 200
t JIT(per)
The single-period jitter defined as the largest deviation of any signal t CK from t CK(avg).
t JIT(per),act
The actual clock jitter for a given system.
t JIT(per),
The specified clock period jitter allowance.
t JIT(per) = min/max of
t CK – t CK(avg)
i
Where i = 1 to 200
1
allowed
t JIT(cc)
t ERR(nper)
The absolute difference in clock periods between
two consecutive clock cycles. t JIT(cc) defines the
cycle-to-cycle jitter.
The cumulative error across
tive cycles from t CK(avg).
t JIT(cc) = max of
n multiple consecu-
t CK
1
– t CK i
i+1
i+n–1
t ERR(nper) =
Σ
t CK
j
– ( n × t CK(avg))
1
j=i
t ERR(nper),act
The actual cumulative error over
given system.
t ERR(nper),
allowed
The specified cumulative error allowance over
cycles.
t ERR(nper),min
The minimum
136
t ERR(nper).
n cycles for a
n
t ERR(nper),min = (1 + 0.68LN(n)) ×
t JIT(per),min
2
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IS43/46LD16160A
IS43/46LD32800A
Symbol
Description
Calculation
t ERR(nper),max
t ERR(nper).
The maximum
t JIT(duty)
Defined with absolute and average specifications
for t CH and t CL, respectively.
Notes
t ERR(nper),max = (1 + 0.68LN(n)) ×
2
t JIT(per),max
t JIT(duty),min =
MIN( ( t CH(abs),min – t CH(avg),min),
( t CL(abs),min – t CL(avg),min)) × t CK(avg)
t JIT(duty),max =
MAX(( t CH(abs),max – t CH(avg),max),
( t CL(abs),max – t CL(avg),max)) × t CK(avg)
Notes:
1. Not subject to production testing.
2. Using these equations, tERR(nper) tables can be generated for each tJIT(per),act value.
tCK(abs), tCH(abs), and tCL(abs)
These parameters are specified with their average values; however, the relationship between the
average timing and the absolute instantaneous timing (defined in the following table) is applicable
at all times.
tCK(abs), tCH(abs), and tCL(abs) Definitions
Parameter
Symbol
Absolute clock period
t CK(abs)
t CK(avg),min +
Minimum
Absolute clock HIGH pulse width
t CH(abs)
t CH(avg),min +
t JIT(duty),min 2 /t CK(avg)min
t CK(avg)
Absolute clock LOW pulse width
t CL(abs)
t CL(avg),min +
t JIT(duty),min 2 /t CK(avg)min
t CK(avg)
t JIT(per),min
Unit
ps 1
Notes:
1. tCK(avg),min is expressed in ps for this table.
2. tJIT(duty),min is a negative value
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Clock Period Jitter
LPDDR2 devices can tolerate some clock period jitter without core timing parameter derating. This
section describes device timing requirements with clock period jitter (tJIT(per)) in excess of the
values found in the AC Timing section. Calculating cycle time derating and clock cycle derating are
also described.
Clock Period Jitter Effects on Core Timing Parameters
Core timing parameters (tRCD, tRP, tRTP, tWR, tWRA, tWTR, tRC, tRAS, tRRD, tFAW) extend
across multiple clock cycles. Clock period jitter impacts these parameters when measured in numbers of clock cycles. Within the specification limits, the device is characterized
and verified to support tnPARAM = RU[tPARAM/tCK(avg)]. During device operation where clock
jitter is outside specification limits, the number of clocks or tCK(avg), may need to be increased
based on the values for each core timing parameter.
Cycle Time Derating for Core Timing Parameters
For a given number of clocks (tnPARAM), when tCK(avg) and tERR(tnPARAM) exceed
tERR(tnPARAM),allowed, cycle time derating may be required for core timing parameters.
tPARAM + tERR( tnPARAM),act – tERR( tnPARAM),allowed
– tCK(avg) , 0
tnPARAM
CycleTimeDerating = max
Conduct cycle time derating analysis for each core timing parameter. The amount of cycle time
derating required is the maximum of the cycle time deratings determined for each individual core
timing parameter.
Clock Cycle Derating for Core Timing Parameters
For each core timing parameter and a given number of clocks (tnPARAM), clock cycle derating
should be specified with tJIT(per). For a given number of clocks (tnPARAM), when tCK(avg) and
(tERR(tnPARAM),act) exceed the supported cumulative tERR(tnPARAM),allowed, if the equation
below results in a positive value for a core timing parameter (tCORE), the required clock cycle derating (in clocks) will be that positive value.
ClockCycleDerating =
RU
tPARAM + tERR( tnPARAM),act – tERR( tnPARAM),allowed
tCK(avg)
– tnPARAM
Conduct cycle-time derating analysis for each core timing parameter.
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Clock Jitter Effects on Command/Address Timing Parameters
Command/address timing parameters (tIS, tIH, tISCKE, tIHCKE, tISb, tIHb, tISCKEb, tIHCKEb) are
measured from a command/address signal (CKE, CS, or CA[9:0]) transition edge to its respective
clock signal (CK/CK#) crossing. The specification values are not affected by the tJIT(per) applied,
as the setup and hold times are relative to the clock signal crossing that latches the command/address. Regardless of clock jitter values, these values must be met.
Clock Jitter Effects on READ Timing Parameters
tRPRE
When the device is operated with input clock jitter, tRPRE must be derated by the tJIT(per),act,max
of the input clock that exceeds tJIT(per),allowed,max. Output deratings are relative to the input
clock.
tRPRE(min,derated) = 0.9 –
tJIT(per),act,max – tJIT(per),allowed,max
tCK(avg)
For example, if the measured jitter into a LPDDR2-800 device has tCK(avg) = 2500ps,
tJIT(per),act,min = –172ps, and JIT(per),act,max = +193ps, then tRPRE,min, derated = 0.9 (tJIT(per), act,max - tJIT(per), allowed,max)/tCK(avg) = 0.9 - (193 - 100)/2500 = 0.8628 tCK(avg).
tLZ(DQ), tHZ(DQ), tDQSCK, tLZ(DQS), tHZ(DQS)
These parameters are measured from a specific clock edge to a data signal transition (DMn or
DQm, where: n = 0, 1, 2, or 3; and m = DQ[31:0]), and specified timings must be met with respect
to that clock edge. Therefore, they are not affected by tJIT(per).
tQSH, tQSL
These parameters are affected by duty cycle jitter, represented by tCH(abs)min and tCL(abs)min.
Therefore tQSH(abs)min and tQSL(abs)min can be specified with tCH(abs)min and tCL(abs)min.
tQSH(abs)min = tCH(abs)min - 0.05 tQSL(abs)min = tCL(abs)min - 0.05. These parameters determine the absolute data-valid window at the device pin. The absolute minimum data-valid window
at the device pin = min [(tQSH(abs)min × tCK(avg)min - tDQSQmax - tQHSmax), (tQSL(abs)min
× tCK(avg)min - tDQSQmax - tQHSmax)]. This minimum data-valid window must be met at the
target frequency regardless of clock jitter.
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tRPST
tRPST is affected by duty cycle jitter, represented by tCL(abs). Therefore, tRPST(abs)min can be
specified by tCL(abs)min. tRPST(abs)min = tCL(abs)min - 0.05 = tQSL(abs)min.
Clock Jitter Effects on WRITE Timing Parameters
tDS, tDH
These parameters are measured from a data signal (DMn or DQm, where n = 0, 1, 2, 3; and m =
DQ[31:0]) transition edge to its respective data strobe signal (DQSn, DQSn#: n = 0,1,2,3) crossing. The specification values are not affected by the amount of tJIT(per) applied, because the
setup and hold times are relative to the clock signal crossing that latches the command/address.
Regardless of clock jitter values, these values must be met.
tDSS, tDSH
These parameters are measured from a data strobe signal crossing (DQSx, DQSx#) to its clock
signal crossing (CK/CK#). The specification values are not affected by the amount of tJIT(per))
applied, because the setup and hold times are relative to the clock signal crossing that latches the
command/address. Regardless of clock jitter values, these values must be met.
tDQSS
This parameter is measured from the clock signal (CK, /CK) crossing to the first latching
data strobe signal (DQSx, /DQSx) crossing. When the device is operated with input clock jitter, this parameter must be derated by the actual tJIT(per),act of the input clock in excess of
tJIT(per),allowed.
tDQSS(min,derated) = 0.75 tDQSS(max,derated) = 1.25 –
tJIT(per),act,min – tJIT(per),allowed, min
tCK(avg)
tJIT(per),act,max – tJIT(per),allowed, max
tCK(avg)
For example, if the measured jitter into an LPDDR2-800 device has tCK(avg) = 2500ps,
tJIT(per),act,min = -172ps, and tJIT(per),act,max = +193ps, then:
tDQSS,(min,derated) = 0.75 - (tJIT(per),act,min - tJIT(per),allowed,min)/tCK(avg) = 0.75 - (-172 + 100)/2500 = 0.7788 tCK(avg), and
tDQSS,(max,derated) = 1.25 - (tJIT(per),act,max - tJIT(per),allowed,max)/tCK(avg) = 1.25 - (193 - 100)/2500 = 1.2128 tCK(avg).
140
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IS43/46LD32800A
ORDERING INFORMATION
Commercial Range: Tc = 0°C to +85°C
Clock
Speed Grade
Order Part No.
Organization
Package
333 MHz
-3
IS43LD16160A-3BL
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS43LD32800A-3BL
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
IS43LD16160A-25BL
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS43LD32800A-25BL
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
400 MHz
-25
Industrial Range: Tc = -40°C to +85°C
Clock
Speed Grade
Order Part No.
Organization
Package
333 MHz
-3
IS43LD16160A-3BLI
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS43LD32800A-3BLI
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
400 MHz
-25
IS43LD16160A-25BLI
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS43LD32800A-25BLI
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
Automotive, A1 Range: Tc = -40°C to +85°C
Clock
Speed Grade Order Part No.
Organization
Package
333 MHz
-3
IS46LD16160A-3BLA1
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A-3BLA1
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A-3BPLA1
8Mb x 32, LPDDR2-S4
168 ball PoP FBGA, lead free
IS46LD16160A-25BLA1
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A -25BLA1
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
400 MHz
-25
IS46LD32800A -25BPLA1 8Mb x 32, LPDDR2-S4
168 ball PoP FBGA, lead free
Automotive, A2 Range: Tc = -40°C to +105°C
Clock
Speed Grade Order Part No.
Organization
Package
333 MHz
-3
IS46LD16160A-3BLA2
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A-3BLA2
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A-3BPLA2
8Mb x 32, LPDDR2-S4
168 ball PoP FBGA, lead free
IS46LD16160A-25BLA2
16Mb x 16, LPDDR2-S4
134 ball FBGA, lead free
IS46LD32800A -25BLA2
8Mb x 32, LPDDR2-S4
134 ball FBGA, lead free
400 MHz
-25
IS46LD32800A -25BPLA2 8Mb x 32, LPDDR2-S4
168 ball PoP FBGA, lead free
Notes:
1. Contact ISSI for availability of 533MHz options.
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IS43/46LD32800A
142
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