MGCHIP MDP1933 Single n-channel trench mosfet 80v, 105a, 7.0m(ohm) Datasheet

Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ
General Description
Features
The MDP1933 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1933 is suitable device for Synchronous
Rectification For Server and general purpose applications.
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VDS = 80V
ID = 105A @VGS = 10V
RDS(ON)
< 7.0 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
G
S
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
80
V
VGSS
±20
V
o
TC=25 C (Silicon Limited)
Continuous Drain Current
(1)
o
TC=25 C (Package Limited)
105
ID
TC=100 C
67
Pulsed Drain Current
IDM
TC=25oC
Power Dissipation
120
A
o
420
157
PD
o
TC=100 C
W
63
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
EAS
144.5
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
0.8
mJ
o
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case
Sep. 2015. Version 1.1
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDP1933– Single N-Channel Trench MOSFET 80V
MDP1933
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP1933TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
80
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
2.0
-
4.0
V
Drain Cut-Off Current
IDSS
VDS = 64V, VGS = 0V
-
-
1.0
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
RDS(ON)
VGS = 10V, ID = 50A
-
5.5
7.0
mΩ
gfs
VDS = 10V, ID = 50A
-
47
-
S
-
59.4
-
-
16.5
-
-
12.3
-
-
3,841
-
Drain-Source ON Resistance
Forward Transconductance
μA
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
VDS = 40V, ID = 50A,
VGS = 10V
VDS = 40V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Crss
-
34.2
-
Output Capacitance
Coss
-
651.7
-
Turn-On Delay Time
td(on)
-
15.6
-
-
32.7
-
-
24.2
-
-
15.1
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10V, VDS = 40V,
ID = 50A , RG = 3.0Ω
tf
nC
pF
ns
Rg
f=1 MHz
-
2.5
-
Ω
Source-Drain Diode Forward Voltage
VSD
IS = 50A, VGS = 0V
-
0.9
1.2
V
Body Diode Reverse Recovery Time
trr
-
64.3
ns
Body Diode Reverse Recovery Charge
Qrr
-
152.7
nC
Gate Resistance
Drain-Source Body Diode Characteristics
IF = 50A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 17.0A, VGS = 10V.
Sep. 2015. Version 1.1
2
MagnaChip Semiconductor Ltd.
MDP1933– Single N-Channel Trench MOSFET 80V
Ordering Information
Drain-Source On-Resistance [mΩ]
10 V
90
8.0 V
80
ID Drain Current [A]
6.0 V
70
5.0 V
60
50
40
4.5 V
30
20
7
6
VGS = 10V
5
4
4.0 V
10
3
0
0
0
1
2
3
4
10
20
5
30
40
50
60
70
80
VDS, Drain-Source Voltage [V]
100
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
2.5
20
※ Notes :
※ Notes :
18
1. VGS = 10 V
2. ID = 50 A
2.0
RDS(ON) [mΩ ],
Drain-Source On-Resistance
RDS(ON), (Normalized)
Drain-Source On-Resistance
90
ID, Drain Current [A]
1.5
1.0
0.5
ID = 50A
16
14
12
10
8
TA = 25℃
6
4
2
0.0
-50
0
-25
0
25
50
75
100
125
4
150
5
6
7
8
9
10
VGS, Gate to Source Volatge [V]
o
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
※ Notes :
※ Notes :
90
100
IDR, Reverse Drain Current [A]
VDS = 10V
ID, Drain Current [A]
80
70
60
TA=25℃
50
40
30
20
VGS = 0V
10
TA=25℃
1
10
0
0
1
2
3
4
5
6
7
0.0
8
Fig.5 Transfer Characteristics
Sep. 2015. Version 1.1
0.3
0.6
0.9
1.2
1.5
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDP1933– Single N-Channel Trench MOSFET 80V
8
100
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 50A
Ciss
VDS = 40V
4000
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
※ Notes ;
6
4
1. VGS = 0 V
2. f = 1 MHz
3000
Coss
2000
1000
Crss
2
0
0
5
10
0
0
10
20
30
40
50
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
60
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
3
10
2
Fig.8 Capacitance Characteristics
120
ID, Drain Current [A]
ID, Drain Current [A]
100
100 us
10
1 ms
Operation in This Area
is Limited by R DS(on)
1
10 ms
10
100 ms
DC
0
-1
40
0
25
-1
10
60
20
Single Pulse
TJ=Max rated
TC=25℃
10
80
10
0
10
1
10
2
50
75
100
125
150
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
0
Zθ JA(t), Thermal Response
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
-2
10
0.01
-3
10
single pulse
-4
10
※ Notes :
Duty Factor, D=t 1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
-5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Sep. 2015. Version 1.1
4
MagnaChip Semiconductor Ltd.
MDP1933– Single N-Channel Trench MOSFET 80V
5000
10
MDP1933– Single N-Channel Trench MOSFET 80V
Package Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Sep. 2015. Version 1.1
5
MagnaChip Semiconductor Ltd.
MDP1933– Single N-Channel Trench MOSFET 80V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Sep. 2015. Version 1.1
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MagnaChip Semiconductor Ltd.
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