DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: PIN – Output power = 10 W (PEP) – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 39% at 900 MHz, 34% at 2200 MHz – dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability 1 • Designed for broadband operation (HF to 2200 MHz) • No internal matching for broadband operation. 3 2 APPLICATIONS • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range Top view MBK584 • Broadcast drivers. Fig.1 Simplified outline. DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) PL (W) Gp (dB) ηD (%) f (MHz) VDS (V) IDQ (mA) f1 = 2200; f2 = 2200.1 26 85 10 (PEP) >11; typ. 13.5 >30; typ. 34 ≤−26; typ. −28 f1 = 960; f2 = 960.1 26 85 10 (PEP) typ. 18.5 typ. 39 dim (dBc) typ. −33 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 10 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE UNIT 5 K/W 0.5 K/W Tmb = 25 °C; note 1 Note 1. Thermal resistance is determined under RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.2 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 1.5 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω Cis input capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 13 − pF Cos output capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 11 − pF Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 0.5 − pF 2003 Feb 10 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 2.2 GHz RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. MODE OF OPERATION CW, class-AB (2-tone) f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2200; f2 = 2200.1 26 85 10 (PEP) >11 >30 ≤−26 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power. MGW642 102 handbook, halfpage C (pF) Cos Gp (dB) Cis 10 10 MGW643 15 handbook, halfpage 60 ηD (%) Gp 40 ηD Crs 1 10 −1 0 10 20 VDS (V) 0 30 VGS = 0; f = 1 MHz. Fig.2 20 5 4 8 12 PL (PEP) (W) 0 16 VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. Input, output and feedback capacitance as functions of drain-source voltage; typical values. 2003 Feb 10 0 Fig.3 4 Power gain and efficiency as functions of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW644 MGW645 15 0 handbook, halfpage handbook, halfpage d im (dBc) Gp (dB) 60 ηD (%) Gp −20 d3 40 10 ηD d5 −40 d7 20 5 −60 −80 0 4 8 12 PL (PEP) (W) 0 16 0 4 8 VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. VDS = 26 V; IDQ = 85 mA; f1 = 2200 MHz; f2 = 2200.1 MHz. Fig.4 Fig.5 Intermodulation distortion as a function of peak envelope load power; typical values. 12 PL (PEP) (W) 0 16 Power gain and efficiency as functions of peak envelope load power; typical values. MGW646 MGW647 0 0 handbook, halfpage handbook, halfpage d im (dBc) d3 (dBc) −20 d3 −20 d5 −40 d7 −40 (1) (2) (3) −60 −80 0 4 8 12 PL (PEP) (W) −60 16 (1) IDQ = 115 mA. Intermodulation distortion as a function of peak envelope load power; typical values. 2003 Feb 10 4 8 12 PL (PEP) (W) 16 VDS = 26 V; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 2200 MHz; f2 = 2200.1 MHz. Fig.6 0 Fig.7 5 (2) IDQ = 55 mA. (3) IDQ = 85 mA. Intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW648 MGW649 8 6 handbook, halfpage handbook, halfpage ZL Zi (Ω) (Ω) 4 RL 6 2 4 0 xi XL −2 2 −4 ri 0 1.8 1.9 2.0 2.1 −6 1.8 2.2 1.9 2.0 2.1 f (GHz) 2.2 f (GHz) VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. VDD handbook, full pagewidth C18 C19 C20 C13 C14 C15 L10 C11 Vgate C12 C6 C5 R1 50 Ω input L9 C1 L6 L1 L2 L3 L4 C3 C10 C8 C2 50 Ω output L7 L8 L5 C4 C7 C9 MGW650 Fig.10 Class-AB test circuit for 2.2 GHz. 2003 Feb 10 6 C16 C17 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 List of components (see Figs 10 and 11) COMPONENT DESCRIPTION VALUE C1, C2, C10, C11 multilayer ceramic chip capacitor; note 1 6.8 pF C3, C4, C7, C9 Tekelec variable capacitor; type 37271 DIMENSIONS CATALOGUE NO. 0.6 to 4.5 pF C5 multilayer ceramic chip capacitor; note 1 2.4 pF C6, C18 tantalum SMD capacitor C8 multilayer ceramic chip capacitor; note 1 1.5 pF C12, C20 multilayer ceramic chip capacitor; note 2 1 nF C13 multilayer ceramic chip capacitor; note 1 10 pF C14 multilayer ceramic chip capacitor; note 1 51 pF C15 multilayer ceramic chip capacitor; note 1 120 pF C16 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C17 electrolytic capacitor 47 µF; 35 V 2222 036 90094 C19 electrolytic capacitor 100 µF; 63 V 2222 037 58101 L1, L8 stripline; note 3 50 Ω 4 × 1.5 mm L2 stripline; note 3 50 Ω 7 × 1.5 mm L3 stripline; note 3 58.1 Ω 12 × 1.2 mm L4 stripline; note 3 11.3 Ω 9 × 10 mm L5 stripline; note 3 11.3 Ω 11.5 × 10 mm L6 stripline; note 3 52.8 Ω 11 × 1.4 mm L7 stripline; note 3 50 Ω 5.5 × 1.5 mm L9 stripline; note 3 64.7 Ω 38 × 1 mm L10 2 turns enamelled 0.5 mm copper wire R1 metal film resistor 10 µF; 35 V int. dia. = 3 mm; length = 3 mm 390 Ω; 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2); thickness 0.51 mm. 2003 Feb 10 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth C18 C13 C14 C15 C16 C20 C17 C19 VDD L10 C11 C12 C6 Vgate C5 R3 C1 C8 C2 C10 C9 C3 C7 C4 BLF1822-10 2.2 GHz input BLF1822-10 2.2 GHz output 60 60 BLF1822-10 2.2 GHz input BLF1822-10 2.2 GHz output 33 33 MGW651 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2003 Feb 10 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 APPLICATION INFORMATION 960 MHz RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified. f (MHz) MODE OF OPERATION f1 = 960; f2 = 960.1 CW, class-AB (2-tone) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) 26 85 10 (PEP) typ. 18.5 typ. 39 typ. −33 Ruggedness in class-AB operation The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 960 MHz at rated load power. MGW652 24 p (dB) 20 MGW653 60 0 ηD handbook, G halfpage handbook, halfpage d im (dBc) (%) 50 Gp −20 16 ηD d3 40 12 30 8 20 d5 d7 −40 −60 10 4 0 0 4 8 12 −80 0 16 20 PL (PEP) (W) 0 4 8 12 16 20 PL (PEP) (W) VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz. VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C; f1 = 960 MHz; f2 = 960.1 MHz. Fig.12 Power gain and efficiency as functions of peak envelope load power; typical values. Fig.13 Intermodulation distortion as a function of peak envelope load power; typical values. 2003 Feb 10 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 MGW654 MGW655 4 10 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri 8 0 RL 6 XL −4 4 xi −8 2 −12 800 900 1000 1100 0 800 1200 f (MHz) 900 1000 1100 1200 f (MHz) VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C. Impedance measured at reference planes. Fig.14 Input impedance as a function of frequency (series components); typical values. Fig.15 Load impedance as a function of frequency (series components); typical values. VDD handbook, full pagewidth R2 Vgate C15 C14 C13 C9 C10 C11 L12 C19 C18 C17 R1 L11 C16 L4 50 Ω output L10 50 Ω input C1 C8 L8 L3 L1 L2 L9 L7 C2 C5 L5 C6 C7 L6 C4 MGW656 C3 Fig.16 Class-AB test circuit for 960 MHz. 2003 Feb 10 10 C12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 List of components (see Figs 16 and 17) COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 82 pF C2, C6 Tekelec variable capacitor; type 27291 DIMENSIONS CATALOGUE NO. 0.8 to 8 pF C3 multilayer ceramic chip capacitor; note 1 0.3 pF C4, C5 Tekelec variable capacitor; type 27271 C7 multilayer ceramic chip capacitor; note 1 2.1 pF C8 multilayer ceramic chip capacitor; note 2 56 pF C19, C14, C19 multilayer ceramic chip capacitor 100 pF size 0805 C10, C17 multilayer ceramic chip capacitor 1 nF size 0805 0.6 to 4.5 pF C12, C14, C19 tantalum SMD capacitor 6.8 µF C13 multilayer ceramic chip capacitor 100 nF 2222 581 16641 C15 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C16 multilayer ceramic chip capacitor; note 1 68 pF L1 stripline; note 3 50 Ω 7.5 × 1.57 mm L2 stripline; note 3 50 Ω 34.5 × 1.57 mm L3 stripline; note 3 19.2 Ω 7 × 6 mm L4 stripline; note 3 50 Ω 11 × 1.57 mm L5 stripline; note 3 50 Ω 9.5 × 1.57 mm L6 stripline; note 3 24.5 Ω 2.2 × 4.4 mm L7 stripline; note 3 19.2 Ω 13 × 6 mm L8 stripline; note 3 50 Ω 27.5 × 1.57 mm L9 stripline; note 3 50 Ω 8 × 1.57 mm L10 stripline; note 2 64.4 Ω 6.4 × 1 mm L11 stripline; note 3 64.4 Ω 38 × 1 mm L12 3 turns enamelled 0.5 mm copper wire R1 resistor 51 Ω, 0.25 W size 1206 R2 resistor 1 kΩ, 0.25 W size 1206 int. dia. = 4 mm length = 5 mm Notes 1. American Technical Ceramics type 500A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81); thickness 0.76 mm. 2003 Feb 10 11 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 handbook, full pagewidth C14 C19 C17 C13 C18 R2 C15 Vgate C12 VDD C11 L12 R1 C9 C10 C16 C7 C1 C2 C5 C8 C6 C3 C4 BLF1822-10 960 MHz input BLF1822-10 960 MHz output 60 60 BLF1822-10 960 MHz input BLF1822-10 960 MHz output 50 50 MGW657 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81), thickness 0.76 mm. The other side is unetched and serves as a ground plane. Fig.17 Component layout for 960 MHz class-AB test circuit. 2003 Feb 10 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2003 Feb 10 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 10 14 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 NOTES 2003 Feb 10 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp16 Date of release: 2003 Feb 10 Document order number: 9397 750 10914