BAS16WS www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART BAS16WS ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS16WS-E3-08 or BAS16WS-E3-18 BAS16WS-HE3-08 or BAS16WS-HE3-18 Single diode A6 Tape and reel SYMBOL VALUE UNIT VR 75 V VRRM 100 V IF 250 mA ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Repetitive peak reverse voltage Forward current (continuous) t = 1 μs IFSM 2 A t = 1 ms IFSM 1 A t=1s IFSM 0.5 A Ptot 200 mW SYMBOL VALUE UNIT RthJA 650 K/W Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C Non-repetitive peak forward current Power dissipation THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature TEST CONDITION Rev. 2.0, 14-Oct-16 Document Number: 85752 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS16WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MAX. UNIT IF = 150 mA VF 1.250 V IF = 1 mA VF 0.715 V IF = 10 mA VF 0.855 V IF = 50 mA VF 1 V VR = 75 V IR 1000 nA Forward voltage Leakage current TYP. VR = 25 V, TJ = 150 °C IR 30 μA VR = 75 V, TJ = 150 °C IR 50 μA VR = 0, f = 1 MHz CD 2 pF IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 trr 6 ns Diode capacitance Reverse recovery time MIN. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 500 103 400 Tj = 100 °C 102 Ptot (mW) IF (mA) Tj = 25 °C 10 1 300 200 100 10- 1 0 10- 2 0 1 2 18185 0 100 200 Tamb (°C) VF (V) 18105 Fig. 1 - Forward Characteristics Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 104 Tj = 25 °C 5 2 10 Tj = 25 °C 1.1 f = 1 MHz f = 1 kHz 3 1.0 CD (VR) 2 102 5 CD (0 V) Rf (Ω) 5 0.9 0.8 2 10 5 0.7 2 10-2 17438 10-1 1 10 0 102 IF (mA) Fig. 2 - Dynamic Forward Resistance vs. Forward Current 17440 2 4 6 8 10 VR (V) Fig. 4 - Relative Capacitance vs. Reverse Voltage Rev. 2.0, 14-Oct-16 Document Number: 85752 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS16WS www.vishay.com Vishay Semiconductors 104 5 2 103 IR (nA) 5 2 102 5 2 10 5 VR = 20 V 2 1 0 100 17441 200 Tj (°C) Fig. 5 - Leakage Current vs. Junction Temperature 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches): SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 17443 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Rev. 2.0, 14-Oct-16 Document Number: 85752 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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