DSK ES1F Fast recovery rectifier Datasheet

Diode Semiconductor Korea
ES1F---ES1A
VOLTAGE RANGE: 1500 --- 600 V
CURRENT: 0.7 A
FAST RECOVERY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
DO - 41
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ES1F
ES1Z
ES1
ES1A
UNITS
Maximum recurrent peak reverse voltage
VRRM
1500
200
400
600
V
Maximum RMS voltage
VRMS
1050
140
280
420
V
Maximum DC blocking voltage
V DC
1500
200
400
600
V
IF(AV)
0.5
0.7
A
IFSM
20.0
30.0
A
VF
2.0
2.5
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 0.5/0.7A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
IR
10.0
5.0
100.0
A
Maximum reverse recovery time (Note1)
t rr
350
ns
Typical junction capacitance
(Note2)
CJ
15
pF
Typical thermal resistance
(Note3)
RθJA
50
TJ
-55----+150
TSTG
-55---- +150
Operating junction temperature range
Storage temperature range
/W
NOTE:1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.diode.kr
Diode Semiconductor Korea
ES1F---ES1A
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t rr
50
N.1.
10
N.1.
+0.5A
D.U.T.
( - )
0
PULSE
GENERATOR
(NOTE2)
(+)
50VDC
(APPROX)
(-)
OSCILLOSCOPE
(NOTE 1)
1
N.1.
-0.25A
( + )
-1.0A
NOTES: 1. RISETIME= 7ns MAX. INPUT IMPEDANCE= 1M . 22PF
2. RISETIME= 10ns MAX. SOURCEIMPEDANCE= 50
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
1.0
ES1Z
ES1
ES1A
0.8
ES1F
0.6
0.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.2
0
0
25
50
75
100
125
150
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.2 -- FORWARD DERATING CURVE
100
10
1.0
0.4
20
E S1 Z
E S1
E S1 A
10
E S1 F
NUMBER OF CYCLES AT 60Hz
ES1~
ES1A
0.2
0.1
0.06
0.04
0.02
0.01
1.0
2.0
3.0
4.0
5.0
FIG.5-- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
PEAK FORWARD SURGE CURRENT
AMPERES
30
10
ES1F~
ES1Z
2
INSTANTANEOUS FORWARD CURRENT, VOLTS
FIG.4-- PEAK FORWARD SURGE CURRENT
5
T J =25
Pulse Width=300 µ S
4
AMBIENT TEMPERATURE,
0 1
1cm
SET TIMEBASEFOR50/100 ns /cm
50
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
www.diode.kr
Similar pages