Diode Semiconductor Korea ES1F---ES1A VOLTAGE RANGE: 1500 --- 600 V CURRENT: 0.7 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction Low leakage DO - 41 Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.012 ounces,0.34 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES1F ES1Z ES1 ES1A UNITS Maximum recurrent peak reverse voltage VRRM 1500 200 400 600 V Maximum RMS voltage VRMS 1050 140 280 420 V Maximum DC blocking voltage V DC 1500 200 400 600 V IF(AV) 0.5 0.7 A IFSM 20.0 30.0 A VF 2.0 2.5 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 0.5/0.7A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 IR 10.0 5.0 100.0 A Maximum reverse recovery time (Note1) t rr 350 ns Typical junction capacitance (Note2) CJ 15 pF Typical thermal resistance (Note3) RθJA 50 TJ -55----+150 TSTG -55---- +150 Operating junction temperature range Storage temperature range ／Ｗ NOTE:1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ES1F---ES1A FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM t rr 50 N.1. 10 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A NOTES: 1. RISETIME= 7ns MAX. INPUT IMPEDANCE= 1M . 22PF 2. RISETIME= 10ns MAX. SOURCEIMPEDANCE= 50 FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 1.0 ES1Z ES1 ES1A 0.8 ES1F 0.6 0.4 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.2 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 -- FORWARD DERATING CURVE 100 10 1.0 0.4 20 E S1 Z E S1 E S1 A 10 E S1 F NUMBER OF CYCLES AT 60Hz ES1~ ES1A 0.2 0.1 0.06 0.04 0.02 0.01 1.0 2.0 3.0 4.0 5.0 FIG.5-- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF PEAK FORWARD SURGE CURRENT AMPERES 30 10 ES1F~ ES1Z 2 INSTANTANEOUS FORWARD CURRENT, VOLTS FIG.4-- PEAK FORWARD SURGE CURRENT 5 T J =25 Pulse Width=300 µ S 4 AMBIENT TEMPERATURE, 0 1 1cm SET TIMEBASEFOR50/100 ns /cm 50 100 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr