UNISONIC TECHNOLOGIES CO., LTD. DTA143T PNP SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free DTA143TL-AE3-R DTA143TG-AE3-R DTA143TL-AL3-R DTA143TG-AL3-R DTA143TL-AN3-R DTA143TG-AN3-R Note: Pin Assignment: E: Emitter, B: Base, C: Collector DTA143TL-AE3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E C B E C B E C B Packing Tape Reel Tape Reel Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3)Lead Free (3) G: Halogen Free, L: Lead Free MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1of 3 QW-R206-058,E DTA143T PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA SOT-23/SOT-323 200 mW Collector Power Dissipation PC SOT-523 150 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(SAT) DC Current Gain hFE Input resistance R1 Transition frequency fT Note: Transition frequency of the device TEST CONDITIONS IC=-50μA IC=-1mA IE=-50μA VCB=-50V VEB=-4V IC=-5mA, IB= -0.25mA VCE=-5V, IC= -1mA VCE=-10V, IE=5mA, f=100MHz (Note) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -50 -50 -5 TYP 100 3.29 250 4.7 250 MAX UNIT V V V -0.5 μA -0.5 μA -0.3 V 600 6.11 kΩ MHz 2 of 3 QW-R206-058,E DTA143T PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current 1000 500 -1000 VCE=-5V -500 Ic/IB =20 TA=100℃ 25℃ -40℃ -200 200 100 TA=100℃ -100 50 25℃ -40℃ -50 20 -20 10 -10 5 -5 2 -2 1 -0.1 Collector-Emitter Saturation Voltage vs. Collector Current -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Collector Current, Ic (mA) -1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 Collector Current, Ic (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-058,E