MSP0312W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V Lead Free ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management Marking and pin assignment PIN Configuration SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP0312W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -12 A (Note 1) IDM -48 A Maximum Power Dissipation PD 3 W TJ,TSTG -55 To 150 ℃ RθJA 41.67 ℃/W Drain Current-Continuous Drain Current-Pulsed Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSP0312W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -30 -33 - V Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 -1.5 -3 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-10A - 11.5 15 mΩ VGS=-4.5V, ID=-7A - 18 25 mΩ VDS=-10V,ID=-10A 20 - - S - 1750 - PF - 215 - PF Crss - 180 - PF Turn-on Delay Time td(on) - 9 - nS Turn-on Rise Time tr VDD=-15V, ID=-10A, - 8 - nS td(off) VGS=-10V,RGEN=1Ω - 28 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-15V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf - 10 - nS Total Gate Charge Qg - 24 - nC Gate-Source Charge Qgs - 3.5 - nC Gate-Drain Charge Qgd - 6 - nC - - -1.2 V VDS=-15V,ID=-10A,VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-2A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP0312W Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output Characteristics MORE Semiconductor Company Limited ID- Drain Current (A) Figure 6 Drain-Source On-Resistance http://www.moresemi.com 3/6 ID- Drain Current (A) Normalized On-Resistance MSP0312W TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward http://www.moresemi.com 4/6 ID- Drain Current (A) MSP0312W Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP0312W SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6