HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS(on) = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 40 160 40 A A A EAR EAS TC = 25°C TC = 25°C 50 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 20 V/ns PD TC = 25°C 560 W -55 ... +150 150 -55 ... +150 °C °C °C Applications 300 °C z TJ TJM Tstg TL TO-247 AD (IXFH) (TAB) Features z z z z 1.6 mm (0.063 in) from case for 10 s z z z Md Mounting torque 1.13/10 Nm/lb.in. z Weight 6 g z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on), low Qg Avalanche energy and current rated Fast intrinsic rectifier DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z z Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 TJ = 25°C TJ = 125°C z Easy to mount Space savings High power density V 5.0 V ±200 nA 25 1 µA mA 0.16 Ω DS98970C(04/04) IXFH40N50Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 15 28 S 4200 pF 680 pF 170 pF TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 17 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 13 ns td(off) RG = 2 Ω (External), 42 ns 8 ns 110 nC 25 nC 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.22 RthCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 2 Dim. K/W K/W 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 40 A Repetitive; pulse width limited by TJM 160 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A 1 9 IF = 25A -di/dt = 100 A/µs, VR = 100 V IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXFH40N50Q2 Fig. 1. Output Characteris tics Fig. 2. Extended Output Characteris tics @ 25º C @ 25º C 40 90 VGS = 10V 35 8V 70 6V 25 20 I D - Amperes I D - Amperes 30 VGS = 10V 80 8V 7V 5.5V 15 5V 10 60 7V 50 40 6V 30 20 4.5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 Fig. 3. Output Characteris tics @ 125ºC 18 21 24 27 30 3.1 VGS = 10V 2.8 8V 7V 30 6V R D S ( o n ) - Normalized 35 I D - Amperes 15 Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m pe rature 40 5.5V 25 20 5V 15 10 4.5V 5 VGS = 10V 2.5 2.2 1.9 I D = 40A 1.6 I D = 20A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 V D S - Volts 14 16 -50 0.5 ID25 Value vs. ID 3.1 2.8 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Curre nt vs. Case Tem perature 45 40 VGS = 10V TJ = 125ºC 2.5 35 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts V D S - Volts 2.2 1.9 1.6 1.3 TJ = 25ºC 30 25 20 15 10 1 5 0.7 0 0 10 20 30 40 50 60 I D - Amperes © 2004 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH40N50Q2 Fig. 8. Trans conductance 50 50 45 45 40 40 TJ = -40ºC 35 35 25ºC 125ºC g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 30 25 20 TJ = 125ºC 15 30 25 20 15 25ºC -40ºC 10 10 5 5 0 0 3 3.5 4 4.5 5 5.5 6 0 6.5 5 10 15 V G S - Volts 30 35 120 10 110 9 VDS = 250V 100 8 I D = 20A 7 I G = 10mA VG S - Volts 80 70 60 50 TJ = 125ºC 45 50 55 6 5 4 3 30 2 TJ = 25ºC 20 1 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 V S D - Volts 10 20 30 40 50 60 70 80 90 100 110 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope rating Area Fig. 11. Capacitance 10000 1000 f = 1MHz TJ = 150ºC TC = 25ºC C iss R DS(on) Limit I D - Amperes Capacitance - picoFarads 40 Fig. 10. Gate Charge 90 I S - Amperes 25 I D - Amperes Fig. 9. Source Current vs. Source -To-Drain Voltage 40 20 1000 C oss 100 25µs 100µs 1ms 10 10ms DC C rss 100 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH40N50Q2 Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000 10000