MOSFET SMD Type N-Channel Enhancement MOSFET NDT4N70 TO-252 +0.15 1.50 -0.15 ■ Features Unit: mm 6.50-+ 0.15 0.15 5.30-+ 0.2 0.2 ● VDS (V) = 700V 2.30-+ 0.1 0.1 +0.8 0.50 -0.7 1.Gate 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 +0.15 5.55 -0.15 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.25 2.65 -0.1 +0.15 -0.15 9.70 2.Drain 0.50 ● RDS(ON) ＜ 2.15Ω (VGS = 10V) +0.2 -0.2 ● ID = 4.2 A (VGS = 10V) 1Gate 2Drain 3Source 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Unit V ID 4.2 Pulsed Drain Current (Note1) IDM 17.6 Avalanche Current (Note1) IAR 4.2 EAR 10.6 mJ EAS 260 mJ dv/dt 4.5 V/ns W Continuous Drain Current Repetitive Pulse Avalanche Energy Single Pulse Avalanche Energy Peak Diode Recovery dv/dt (Note1) (Note2) (Note3) PD 49 Thermal Resistance.Junction- to-Ambient RthJA 110 Thermal Resistance.Junction- to-Case RthJC 2.55 Power Dissipation TJ 150 Operating Temperature Topr -55 to 150 Storage Temperature Range Tstg -55 to 150 Junction Temperature A ℃/W ℃ Note.1 Repetitive Rating : Pulse width limited by maximum junction temperature Note.2 L=26.9mH, IAS=4.2A, VDD=50V, Rg =25Ω, Starting TJ=25°C Note.3 ISD ≤4.2A, di/dt≤200A/us, VDD≤BVdss, Starting TJ=25°C www.kexin.com.cn 1 MOSFET SMD Type N-Channel Enhancement MOSFET NDT4N70 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol Test Conditions Typ Max Unit V ID=250μA, VGS=0V Zero Gate Voltage Drain Current IDSS VDS=700V, VGS=0V 10 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±30V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 4 V Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=4.2A 2.15 Ω 2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 8 11 Total Gate Charge Qg 25 20 VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=560V, ID=4.2A (Note1,2) 330 670 70 90 Qgs Gate Drain Charge Qgd 7.1 Turn-On DelayTime td(on) 13 35 Turn-On Rise Time tr 45 100 Turn-Off DelayTime td(off) 25 60 35 80 VDS=350V, ID=4.2A,RG=25Ω (Note1,2) tf trr Body Diode Reverse Recovery Charge Qrr Drain-Source Diode Forward Current ISM 17.6 IS 4.2 Maximum Body-Diode Continuous Current Diode Forward Voltage VSD IS=4.2A,VGS=0V Note.1: Pulse Test: Pulse width≤300μs, Duty cycle≤2% Note.2: Essentially independent of operating temperature www.kexin.com.cn ns 250 Body Diode Reverse Recovery Time IF= 4.2A, dI/dt= 100A/μs,VGS=0V pF nC 3.4 Gate Source Charge Turn-Off Fall Time 2 Min 700 VDSS 1.5 uC 1.4 A V MOSFET SMD Type N-Channel Enhancement MOSFET NDT4N70 ■ Typical Characterisitics 300 Drain Current vs. Drain-Source Breakdown Voltage 300 250 Drain Current, ID (µA) Drain Current, ID (µA) 250 200 150 100 150 100 0 0 200 400 600 800 1000 1200 1400 Drain-Source Breakdown Voltage, BVDSS(V) 0 1 2 4 5 6 3 Gate Threshold Voltage, VTH (V) 7 Drain Current, ID (A) Drain Current, ID (A) 200 50 50 0 Drain Current vs. Gate Threshold Voltage www.kexin.com.cn 3