Infineon BGA777N7 Single-band umts lna (2300 - 2700 mhz) Datasheet

BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Data Sheet
Revision 3.1, 2013-01-31
RF & Protection Devices
Edition 2013-01-31
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
BGA777N7 Single-Band UMTS LNA (2300 - 2700 MHz)
Revision History: 2013-01-31, Revision 3.1
Previous Revision: 2012-10-31, Revision 3.0
Page
Subjects (major changes since last revision)
33
Footprint recommendation drawing added
34
Marking pattern drawing updated
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.21
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Logic Signal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Measured Performance Band 7 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 22
Measured Performance Band 7 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 24
Measured Performance Band 7 Application Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 25
Measured Performance Band 7 Application Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 27
3
3.1
3.2
3.3
3.4
3.5
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS Band 7 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS Band 38 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS Band 40 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28
28
29
30
30
31
4
4.1
4.2
4.3
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Product Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
33
33
34
34
Data Sheet
4
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Data Sheet
Block Diagram of Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Application Board Layout on 3-Layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Footprint Recommendation 1 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Footprint Recommendation 2 for the TSNP-7-1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Package Outline (top, side and bottom view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Tape & Reel Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Marking Pattern (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Table 16
Table 17
Table 18
Table 19
Data Sheet
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
DC Characteristics, TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical switching times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical Characteristics 2650 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 13
Typical Characteristics 2650 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical Characteristics 2650 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 15
Typical Characteristics 2600 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 16
Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 17
Typical Characteristics 2600 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 18
Typical Characteristics 2300 MHz Band, TA = -30 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 19
Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Typical Characteristics 2300 MHz Band, TA = 85 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 21
Bill ot Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
6
Revision 3.1, 2013-01-31
Single-Band UMTS LNA (2300 - 2700 MHz)
1
BGA777N7
Features
Main features:
•
•
•
•
•
•
•
•
•
•
Gain: 16 / -7 dB in high / low gain mode
Noise figure: 1.2 dB in high gain mode
Supply current: 4.2 / 0.5 mA in high / low gain mode
Standby mode (< 2 μA typ.)
Output internally matched to 50 Ω
Inputs pre-matched to 50 Ω
2 kV HBM ESD protection
Low external component count
Small leadless TSNP-7-1 package (2.0 x 1.3 x 0.39 mm)
Pb-free (RoHS compliant) package
Description
The BGA777N7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is
based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1
leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging
of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD
protection on-chip as well as matching off chip.
Product Name
Package
Chip
Marking
BGA777N7
TSNP-7-1
T1531
B7
Data Sheet
7
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Features
6
1
RFIN
2
VEN
RFOUT
Biasing & Logic
Circuitry
5
RREF
4
3
VGS
VCC
7
GND
BGA777N7_Chip_BlD.vsd
Figure 1
Data Sheet
Block Diagram of Single-Band LNA
8
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
-0.3
–
3.6
V
–
Supply current
ICC
–
–
10
mA
–
Pin voltage
VPIN
-0.3
–
VCC+0.3 V
All pins except RF input pins.
Pin voltage RF Input Pins
VRFIN
-0.3
–
0.9
V
–
RF input power
PRFIN
–
–
4
dBm
–
Junction temperature
Tj
–
–
150
°C
–
Ambient temperature range
TA
-30
–
85
°C
–
Storage temperature range
Tstg
-65
–
150
°C
–
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Thermal resistance junction to
soldering point
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
ESD hardness HBM1)
RthJS
Values
Min.
Typ.
Max.
–
240
–
Symbol
VESD-HBM
Values
Min.
Typ.
Max.
–
2000
–
Unit
Note / Test Condition
K/W
–
Unit
Note / Test Condition
V
All pins
1) According to JESD22-A114
Data Sheet
9
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.4
DC Characteristics
Table 4
DC Characteristics, TA = -30 ... 85 °C
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
–
Supply voltage
VCC
2.6
2.8
3.0
V
Supply current high gain
mode
ICCHG
2.8
4.2
5.8
mA
Supply current low gain
mode
ICCLG
0.2
0.53
0.8
mA
Supply current standby
mode
ICCOFF
-0.5
0.1
2.0
μA
–
Logic level high
VHI
1.5
2.8
3.0
V
All logic pins
Logic level low
VLO
-0.2
0.0
0.5
V
Logic currents
ILO
-0.5
0.01
2.0
μA
IHI
4.0
5.0
6.0
μA
2.5
Gain Mode Select Truth Table
Table 5
Truth Table
All logic pins
State
Control Voltage
Bands 7, 38, 40
VEN
VGS
HG
LG
H
L
OFF
ON
H
H
ON
OFF
L
L
STANDBY1)
L
H
1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4.
2.6
Switching Times
Table 6
Typical switching times; TA = -30 ... 85 °C
Parameter
Settling time gainstep
Data Sheet
Symbol
tGS
Values
Min.
Typ.
Max.
–
1
5
10
Unit
Note / Test Condition
μs
Switching LG ↔ HG
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.7
Supply Current Characteristics
Supply current high gain mode versus resistance of reference resistor RREF(see Figure 2 on Page 28;
low gain mode supply current is independent of reference resistor).
Power Gain |S21| = f (RREF)
VCC = 2.8 V, TA = 25 °C
Supply Current ICC = f (RREF)
VCC = 2.8 V, TA = 25 °C
17
7
6.5
16.5
6
Power Gain [dB]
Icc [mA]
5.5
5
4.5
4
3.5
3
16
15.5
15
14.5
2.5
2
14
1
10
100
Data Sheet
1
10
100
RREF [kΩ]
RREF [kΩ]
11
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.8
Logic Signal Characteristics
Current consumption of logic inputs VEN, VGS
Logic Current IEN = f (VEN)
VCC = 2.8 V, TA = 25 °C
Logic Current IGS = f (VGS)
VCC = 2.8 V, TA = 25 °C
6
4
4
IEN [µA]
IGS [µA]
6
2
0
2
0
0.5
1
1.5
2
2.5
0
3
VEN [V]
Data Sheet
0
0.5
1
1.5
2
2.5
3
VGS [V]
12
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.9
Measured RF Characteristics UMTS Band 7
Table 7
Typical Characteristics 2650 MHz Band, TA = -30 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Pass band range band VII
Values
Min.
Typ.
Max.
2620
–
2690
Unit
Note / Test Condition
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
2.8
3.4
4.0
mA
High gain mode
0.2
0.5
0.8
mA
Low gain mode
14.5
16.0
17.5
dB
High gain mode
-8.8
-6.3
-3.3
dB
Low gain mode
–
-34
-25
dB
High gain mode
-8.8
-6.3
-3.3
dB
Low gain mode
0.6
0.9
1.4
dB
High gain mode
3.3
6.3
8.8
dB
Low gain mode
–
-16
-10
dB
50 Ω, high gain mode
S11LG
–
-11
-9
dB
50 Ω, low gain mode
S22HG
–
-16
-10
dB
50 Ω, high gain mode
S22LG
–
-10
-8
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-16
-9
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-7
-2
5
–
dBm
High gain mode
Low gain mode
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 28
2) Guaranteed by device design; not tested in production.
Data Sheet
13
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.10
Measured RF Characteristics UMTS Band 7
Table 8
Typical Characteristics 2650 MHz Band, TA = 25 °C, VCC = 2.8 V1)
Symbol
Parameter
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2620
–
2690
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
3.6
4.2
4.8
mA
High gain mode
0.3
0.53
0.7
mA
Low gain mode
14.4
15.7
17.0
dB
High gain mode
-9.6
-7.1
-4.1
dB
Low gain mode
–
-34
-25
dB
High gain mode
-9.5
-7.0
-4.0
dB
Low gain mode
0.9
1.2
1.7
dB
High gain mode
3.8
6.8
9.3
dB
Low gain mode
–
-20
-10
dB
50 Ω, high gain mode
S11LG
–
-10
-8
dB
50 Ω, low gain mode
S22HG
–
-20
-10
dB
50 Ω, high gain mode
S22LG
–
-11
-9
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point2)
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-17
-10
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-5
-2
7
–
dBm
High gain mode
Low gain mode
Pass band range band VII
Current consumption
Gain
2)
Reverse Isolation
Noise figure
Input return loss
2)
2)
Output return loss
3)
2)
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 28
2) Verification based on AQL; random production test..
3) Guaranteed by device design; not tested in production.
Data Sheet
14
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.11
Measured RF Characteristics UMTS Band 7
Table 9
Typical Characteristics 2650 MHz Band, TA = 85 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2620
–
2690
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
4.6
5.2
5.8
mA
High gain mode
0.2
0.58
0.8
mA
Low gain mode
13.1
14.6
16.1
dB
High gain mode
-10.4
-7.9
-4.9
dB
Low gain mode
–
-34
-25
dB
High gain mode
-10.4
-7.9
-4.9
dB
Low gain mode
1.4
1.7
2.2
dB
High gain mode
4.9
7.9
10.4
dB
Low gain mode
–
-16
-10
dB
50 Ω, high gain mode
S11LG
–
-11
-9
dB
50 Ω, low gain mode
S22HG
–
-20
-10
dB
50 Ω, high gain mode
S22LG
–
-11
-9
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-17
-10
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-3
-2
9
–
dBm
High gain mode
Low gain mode
Pass band range band VII
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 2 on Page 28
2) Guaranteed by device design; not tested in production.
Data Sheet
15
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.12
Measured RF Characteristics UMTS Band 38
Table 10
Typical Characteristics 2600 MHz Band, TA = -30 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Pass band range band XXXVIII
Values
Min.
Typ.
Max.
2570
–
2620
Unit
Note / Test Condition
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
2.8
3.4
4.0
mA
High gain mode
0.2
0.5
0.8
mA
Low gain mode
14.7
16.2
17.7
dB
High gain mode
-8.5
-6.0
-3.0
dB
Low gain mode
–
-34
-25
dB
High gain mode
-8.5
-6.0
-3.0
dB
Low gain mode
0.6
0.9
1.4
dB
High gain mode
3.0
6.0
8.5
dB
Low gain mode
–
-15
-10
dB
50 Ω, high gain mode
S11LG
–
-13
-10
dB
50 Ω, low gain mode
S22HG
–
-11
-9
dB
50 Ω, high gain mode
S22LG
–
-18
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-16
-9
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-7
-2
5
–
dBm
High gain mode
Low gain mode
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 3 on Page 29
2) Guaranteed by device design; not tested in production.
Data Sheet
16
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.13
Measured RF Characteristics UMTS Band 38
Table 11
Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2570
–
2620
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
3.6
4.2
4.8
mA
High gain mode
0.3
0.53
0.7
mA
Low gain mode
14.2
15.5
16.8
dB
High gain mode
-9.4
-6.9
-3.9
dB
Low gain mode
–
-34
-25
dB
High gain mode
-9.5
-7.0
-4.0
dB
Low gain mode
0.9
1.2
1.7
dB
High gain mode
3.8
6.8
9.3
dB
Low gain mode
–
-15
-10
dB
50 Ω, high gain mode
S11LG
–
-11
-9
dB
50 Ω, low gain mode
S22HG
–
-15
-10
dB
50 Ω, high gain mode
S22LG
–
-13
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-17
-10
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-5
-2
7
–
dBm
High gain mode
Low gain mode
Pass band range band XXXVIII
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 3 on Page 29
2) Guaranteed by device design; not tested in production.
Data Sheet
17
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.14
Measured RF Characteristics UMTS Band 38
Table 12
Typical Characteristics 2600 MHz Band, TA = 85 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2570
–
2620
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
4.6
5.2
5.8
mA
High gain mode
0.2
0.58
0.8
mA
Low gain mode
13.4
14.9
16.4
dB
High gain mode
-9.9
-7.4
-4.4
dB
Low gain mode
–
-34
-25
dB
High gain mode
-9.9
-7.4
-4.4
dB
Low gain mode
1.4
1.7
2.2
dB
High gain mode
4.4
7.4
-9.9
dB
Low gain mode
–
-16
-10
dB
50 Ω, high gain mode
S11LG
–
-13
-10
dB
50 Ω, low gain mode
S22HG
–
-16
-10
dB
50 Ω, high gain mode
S22LG
–
-15
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-18
-11
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-3
-2
9
–
dBm
High gain mode
Low gain mode
Pass band range band XXXVIII
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 3 on Page 29
2) Guaranteed by device design; not tested in production.
Data Sheet
18
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.15
Measured RF Characteristics UMTS Band 40
Table 13
Typical Characteristics 2300 MHz Band, TA = -30 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Pass band range band XL
Values
Min.
Typ.
Max.
2300
–
2400
Unit
Note / Test Condition
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
2.8
3.4
4.0
mA
High gain mode
0.2
0.5
0.8
mA
Low gain mode
15.8
17.3
18.8
dB
High gain mode
-8.7
-6.2
-3.2
dB
Low gain mode
–
-35
-25
dB
High gain mode
-8.7
-6.2
-3.2
dB
Low gain mode
0.6
0.9
1.4
dB
High gain mode
3.2
6.2
8.7
dB
Low gain mode
–
-17
-10
dB
50 Ω, high gain mode
S11LG
–
-13
-10
dB
50 Ω, low gain mode
S22HG
–
-16
-10
dB
50 Ω, high gain mode
S22LG
–
-14
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-17
-10
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-7
-2
5
–
dBm
High gain mode
Low gain mode
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 4 on Page 30
2) Guaranteed by device design; not tested in production.
Data Sheet
19
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.16
Measured RF Characteristics UMTS Band 40
Table 14
Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2300
–
2400
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
3.6
4.2
4.8
mA
High gain mode
0.3
0.53
0.7
mA
Low gain mode
15.5
16.8
18.1
dB
High gain mode
-9.7
-7.2
-4.2
dB
Low gain mode
–
-35
-25
dB
High gain mode
-9.5
-7.0
-4.0
dB
Low gain mode
0.9
1.2
1.7
dB
High gain mode
4.0
7.0
9.5
dB
Low gain mode
–
-23
-10
dB
50 Ω, high gain mode
S11LG
–
-12
-10
dB
50 Ω, low gain mode
S22HG
–
-15
-10
dB
50 Ω, high gain mode
S22LG
–
-12
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-18
-11
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-5
-2
7
–
dBm
High gain mode
Low gain mode
Pass band range band XL
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 4 on Page 30
2) Guaranteed by device design; not tested in production.
Data Sheet
20
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.17
Measured RF Characteristics UMTS Band 40
Table 15
Typical Characteristics 2300 MHz Band, TA = 85 °C, VCC = 2.8 V1)2)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
2300
–
2400
MHz
–
ICCHG
ICCLG
S21HG
S21LG
S12HG
S12LG
NFHG
NFLG
S11HG
4.6
5.2
5.8
mA
High gain mode
0.2
0.58
0.8
mA
Low gain mode
14.5
16.0
17.5
dB
High gain mode
-10.1
-7.6
-4.6
dB
Low gain mode
–
-35
-25
dB
High gain mode
-10.1
-7.6
-4.6
dB
Low gain mode
1.2
1.5
2.0
dB
High gain mode
4.6
7.6
10.1
dB
Low gain mode
–
-18
-10
dB
50 Ω, high gain mode
S11LG
–
-13
-10
dB
50 Ω, low gain mode
S22HG
–
-17
-10
dB
50 Ω, high gain mode
S22LG
–
-13
-10
dB
50 Ω, low gain mode
Stability factor
k
>1
>2.3
–
Input compression point
IP1dBHG
IP1dBLG
IIP3HG
IIP3LG
-19
-12
–
dBm
High gain mode
-10
-2
–
dBm
Low gain mode
-9
-3
-2
9
–
dBm
High gain mode
Low gain mode
Pass band range band XL
Current consumption
Gain
Reverse Isolation
Noise figure
Input return loss
Output return loss
Inband IIP3
f1 - f2 = 1 MHz
DC to 8 GHz; all gain
modes
1) Performance based on application circuit in Figure 4 on Page 30
2) Guaranteed by device design; not tested in production.
Data Sheet
21
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.18
Measured Performance Band 7 Application High Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V
Power Gain |S21| = f ( f )
Power Gain wideband |S21| = f ( f )
20
17
10
−30°C
0
Power Gain [dB]
Power Gain [dB]
16
25°C
15
85°C
−10
−20
−30
−40
14
−50
−60
13
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
0
2
4
6
8
Frequency [GHz]
Frequency [GHz]
Gainstep HG-LG |ΔS21| = f ( f )
Matching |S11| = f ( f ), |S22| = f ( f )
0
24
−5
Delta Gain [dB]
|S11|, |S22| [dB]
23.5
−10
−15
S
22
−20
−30
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
−30°C
85°C
22
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Data Sheet
25°C
22.5
S11
−25
23
Frequency [GHz]
22
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
Input Compression P1dB = f ( f )
1.6
−6
1.5
−7
1.4
−8
1.3
−9
P1dB [dBm]
NF [dB]
Noise Figure NF = f ( f )
1.2
1.1
−10
−11
1
−12
0.9
−13
0.8
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
−14
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Data Sheet
Frequency [GHz]
23
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.19
Measured Performance Band 7 Application High Gain Mode vs. Temperature
TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2650 MHz
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
18
6
5.5
5
16
ICC [mA]
Power Gain [dB]
17
15
4.5
4
14
13
−40
3.5
−20
0
20
40
60
80
3
−40
100
−20
0
TA [°C]
−6
1.8
−7
80
100
−8
P1dB [dBm]
1.6
NF [dB]
60
Input Compression P1dB = f (TA)
2
1.4
1.2
1
−9
−10
−11
−12
0.8
−13
−20
0
20
40
60
80
−14
−40
100
TA [°C]
Data Sheet
40
TA [°C]
Noise Figure NF = f (TA)
0.6
−40
20
−20
0
20
40
60
80
100
TA [°C]
24
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.20
Measured Performance Band 7 Application Low Gain Mode vs. Frequency
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V
Power Gain |S21| = f ( f )
Power Gain wideband |S21| = f ( f )
−5
0
−10
−30°C
Power Gain [dB]
Power Gain [dB]
−6
−7
25°C
−8
85°C
−9
−20
−30
−40
−50
−10
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
−60
Frequency [GHz]
0
2
4
6
8
Frequency [GHz]
Matching |S11| = f ( f ), |S22| = f ( f )
0
−5
|S11|, |S22| [dB]
S22
−10
S
11
−15
−20
−25
−30
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Data Sheet
25
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
Noise Figure NF = f ( f )
Input Compression P1dB = f ( f )
11
4
10
2
0
P1dB [dBm]
NF [dB]
9
8
−2
−4
7
−6
6
−8
5
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
−10
2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69
Frequency [GHz]
Data Sheet
Frequency [GHz]
26
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Electrical Characteristics
2.21
Measured Performance Band 7 Application Low Gain Mode vs. Temperature
TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2650 MHz
Power Gain |S21| = f (TA)
Supply Current ICC = f (TA)
−5
0.7
0.65
−6
0.55
−7
ICC [mA]
Power Gain [dB]
0.6
−8
0.5
0.45
0.4
−9
0.35
−10
−40
−20
0
20
40
60
80
0.3
−40
100
−20
0
TA [°C]
20
40
60
80
100
TA [°C]
Noise Figure NF = f (TA)
Input Compression P1dB = f (TA)
10
4
9
2
0
P1dB [dBm]
NF [dB]
8
7
−2
−4
6
−6
5
4
−40
−8
−20
0
20
40
60
80
−10
−40
100
TA [°C]
Data Sheet
−20
0
20
40
60
80
100
TA [°C]
27
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Application Circuit and Block Diagram
3
Application Circuit and Block Diagram
3.1
UMTS Band 7 Application Circuit Schematic
L1
3.3nH
C1
2.4pF
L3
3.3nH
RFIN
2600 MHz
RFOUT
RFIN
L2
3.9nH
VEN = 0 / 2.8 V
2
Biasing & Logic
Circuitry
C2
1.5pF
5
RREF
VEN
VGS = 0 / 2.8 V
RFOUT
2600 MHz
6
1
4
3
VGS
VCC
R REF
8.2k½
VCC = 2.8 V
C3
10nF
7 GND
BGA777N7_Appl_Band7_BlD.vsd
Figure 2
Application Circuit with Chip Outline (Top View)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 16
Bill ot Materials
Part Number
Part Type
Manufacturer
Size
Comment
L1 ... L3
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C3
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
28
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Application Circuit and Block Diagram
3.2
UMTS Band 38 Application Circuit Schematic
L1
3.3nH
C1
2.4pF
L3
3.6nH
RFIN
2500 MHz
RFOUT
RFIN
L2
4.1nH
VEN = 0 / 2.8 V
2
Biasing & Logic
Circuitry
C2
1.2pF
5
RREF
VEN
VGS = 0 / 2.8 V
RFOUT
2500 MHz
6
1
4
3
VGS
VCC
R REF
8.2k½
VCC = 2.8 V
C3
10nF
7 GND
BGA777N7_Appl_Band38_BlD.vsd
Figure 3
Application Circuit with Chip Outline (Top View)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 17
Bill of Materials
Part Number
Part Type
Manufacturer
Size
Comment
L1 ... L3
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C3
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
Data Sheet
29
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Application Circuit and Block Diagram
3.3
UMTS Band 40 Application Circuit Schematic
C1
56pF
C2
10pF
L2
3.6nH
RFIN
2300 MHz
RFOUT
RFIN
L1
2.7nH
VEN = 0 / 2.8 V
2
Biasing & Logic
Circuitry
5
RREF
VEN
VGS = 0 / 2.8 V
RFOUT
2300 MHz
6
1
R REF
8.2k½
VCC = 2.8 V
4
3
VGS
VCC
C3
10nF
7 GND
BGA777N7_Appl_Band40_BlD.vsd
Figure 4
Application Circuit with Chip Outline (Top View)
Note: Package paddle (Pin 0) has to be RF grounded.
Table 18
Bill of Materials
Part Number
Part Type
Manufacturer
Size
Comment
L1 ... L2
Chip inductor
Various
0402
Wirewound, Q ≈ 50
C1 ... C3
Chip capacitor
Various
0402
RREF
Chip resistor
Various
0402
3.4
Pin Definition
Table 19
Pin Definition and Function
Pin Number
Symbol
Function
1
RFIN
LNA input (2600 MHz)
2
VEN
Band select control
3
VGS
Gain step control
4
VCC
Supply voltage
5
RREF
Bias current reference resistor (high gain mode)
6
RFOUT
LNA output (2600 MHz)
7
GND
Package paddle; ground connection for LNA and control circuitry
Data Sheet
30
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Application Circuit and Block Diagram
3.5
Application Board
Top layer (top view)
Middle layer (top view)
Bottom layer (top view)
BGA777N7_App_Board.vsd
Figure 5
Application Board Layout on 3-Layer FR4
Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board
size: 21 x 19mm.
0.017 mm
0.100 mm
Copper
Prepreg FR4
0.100 mm
0.035 mm
Prepreg FR4
Copper
0.460 mm
FR4
0.100 mm
Prepreg FR4
0.100 mm
0.017 mm
Prepreg FR4
Copper
BGA777N7_Cross_Section_View.vsd
Figure 6
Data Sheet
Cross-Section View of Application Board
31
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Application Circuit and Block Diagram
1
VEN
2
7
RFOUT
5
RREF
4
GND
VGS
3
6
VCC
RFIN
BGA777N7_App_Board_exact.vsd
Figure 7
Detail of Application Board Layout
Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout
as closely as possible. The position of the GND vias is critical for RF performance.
Data Sheet
32
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Physical Characteristics
4
Physical Characteristics
4.1
Package Footprint
NSM D
SMD
Copper
0.25
1.9
0.2
0.3
Copper
0.2
R0.1
0.25
0.3
Stencil apertures
Solder mask
0.25
0.2
0.2
0.3
R0.1
0.25
0.3
0.2
0.25
1.9
1.9
0.2
0.25
0.2
0.3
0.25
0.2
0.2
0.25
0.2
0.2
1.9
0.3
1.4
0.2
1.4
0.2
1.4
0.2
1.4
Stencil apertures
Solder mask
TSNP-7-1-FP V01
Figure 8
Footprint Recommendation 1 for the TSNP-7-1 Package
N SMD
0.5
0.25
0.25
0.18
0.4
0.1
1.95
0.18
1.1
1.95
1.2
0.25
0.25
0.25
0.25
1.25
1.25
Copper
Solder mask
Stencil apertures
TSNP-7-1-N-FP V01
Figure 9
Data Sheet
Footprint Recommendation 2 for the TSNP-7-1 Package
33
Revision 3.1, 2013-01-31
BGA777N7
Single-Band UMTS LNA (2300 - 2700 MHz)
Physical Characteristics
Package Dimensions
Top view
Bottom view
1.3 ±0.05
0.375 +0.025
-0.015
1.15 ±0.05 1)
0.02 MAX.
1 ±0.05
6
1.75 ±0.05
7
3
Pin 1 marking
2
1
6 x 0.2 ±0.05 1)
1) Dimension applies to plated terminals
Figure 10
2 ±0.05
5
1.1 ±0.05 1)
4
6 x 0.25 ±0.05 1)
4.2
TSNP-7-1-PO V02
Package Outline (top, side and bottom view)
4
8
2.3
0.5
1.6
Pin 1 marking
Figure 11
Tape & Reel Dimensions
4.3
Product Marking Pattern
TSNP-7-1-TP V01
123
Type code
Date code (YYWW)
Pin 1 marking
TSNP-7-1-MK V01
Figure 12
Data Sheet
Marking Pattern (top view)
34
Revision 3.1, 2013-01-31
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Published by Infineon Technologies AG