AP50G60W-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free VCES 600V IC 40A G C C TO-3P E G E Absolute Maximum Ratings Rating Units VCES Symbol Collector-Emitter Voltage Parameter 600 V VGE Gate-Emitter Voltage +30 V IC@TC=25oC Collector Current 75 A IC@TC=100oC Collector Current 40 A ICM Pulsed Collector Current 150 A PD@TC=25oC Maximum Power Dissipation 277 W TSTG Storage Temperature Range -55 to 150 o TJ Operating Junction Temperature Range 150 o TL Maximum Lead Temp. for Soldering Purposes 300 o C C C , 1/8" from case for 5 seconds . Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Parameter Symbol Rthj-c Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value Units 0.45 o 40 o C/W C/W Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol IGES Parameter Gate-to-Emitter Leakage Current ICES Collector-Emitter Leakage Current Test Conditions VGE=+30V, VCE=0V Min. - Typ. - Max. Units +100 nA VCE=600V, VGE=0V - - 500 uA VGE=15V, IC=40A - 2.5 2.9 V VGE=15V, IC=75A - 3.3 - V VCE=VGE, IC=1mA 3 - 7 V VCE(sat) Collector-Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Qg Total Gate Charge IC=33A - 66 105 nC Qge Gate-Emitter Charge VCE=400V - 12 - nC Qgc Gate-Collector Charge - 36 - nC td(on) Turn-on Delay Time - 15 - ns tr Rise Time - 80 - ns td(off) Turn-off Delay Time ns tf Fall Time VGE=15V VCE=390V, Ic=33A, VGE=15V, RG=5Ω, Inductive Load Eon Turn-On Switching Loss - 43 - - 160 320 ns - 1.5 - mJ Eoff Turn-Off Switching Loss - 0.75 - mJ Cies Input Capacitance VGE=0V - 1400 2240 pF Coes Output Capacitance VCE=30V - 160 - pF Cres Reverse Transfer Capacitance f=1.0MHz - 20 - pF Data and specifications subject to change without notice 1 201211301 AP50G60W-HF 200 20 IC , Collector Current (A) 160 VGE , Gate -Emitter Voltage (V) 20V 18V 15V T C =25 o C 120 12V 80 V GE =10V 40 I C =33A V CC =300V V CC =400V V CC =500V 16 12 8 4 0 0 0 10 20 0 30 20 Fig 1. Typical Output Characteristics 60 80 Fig 2. Gate Charge Characterisitics 160 5 V GE = 15 V VCE(sat) ,Saturation Voltage(V) V GE =15V IC , Collector Current(A) 40 Q G , Gate Charge (nC) V CE , Collector-Emitter Voltage (V) 120 T C =25 o C T C =150 o C 80 40 4 I C = 50 A 3 I C =40A 2 1 0 0 2 4 6 0 8 40 80 120 160 Junction Temperature ( o C) V CE , Collector-Emitter Voltage (V) Fig 3. Typical Saturation Voltage Characteristics Fig 4. Typical Collector- Emitter Voltage v.s. Junction Temperature 2 f=1.0MHz 3000 I C = 1mA Capacitance (pF) Normalized VGE(th) 1.6 1.2 0.8 2000 C ies 1000 - 0.4 - 0 0 -50 0 50 100 150 Junction Temperature ( o C ) Fig 5. Gate Threshold Voltage 1 5 9 13 17 21 25 29 C oes C res33 V CE , Collector-Emitter Voltage (V) Fig 6. Typical Capacitance Characterisitics v.s. Junction Temperature 2 AP50G60W-HF 1 Normalized Thermal Response (Rthjc) Power Dissipation (W) 400 300 200 100 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0 0 50 100 150 0.00001 200 0.0001 0.001 o 0.1 1 10 Junction Temperature ( C ) t , Pulse Width (s) Fig 7. Power Dissipation vs. Junction Temperature Fig 8. Effective Transient Thermal Impedance, Junction-to-Case (IGBT) 20 20 o T C =25 C o T C = 150 C VCE , Collector-Emitter Voltage(V) VCE , Collector-Emitter Voltage(V) 0.01 15 10 5 I C = 50 A 33 A 15 A 0 15 10 5 I C = 50 A 33 A 15 A 0 0 4 8 12 16 20 0 4 8 12 16 20 V GE , Gate-Emitter Voltage(V) V GE , Gate-Emitter Voltage(V) Fig 10. Saturation Voltage vs. VGE Fig 9. Saturation Voltage vs. VGE 160 1000 IC ,Collctor Current(A) IC , Collector Current (A) 100 120 80 T j =150 o C T j =25 o C 10us 100us 10 1ms 1 10ms 40 DC 0.1 T c =25 o C Single Pulse 0 0.01 0 4 8 12 V GE , Gate - Emitter Voltage (V) Fig 11. Transfer Characteristics 16 1 10 100 1000 V CE ,Collector - Emitter Voltage(V) Fig 12. SOA Characteristics 3