ON NDF05N50ZH N-channel power mosfet 500 v, 1.5 ohm Datasheet

NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5 W
Features
•
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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VDSS
RDS(on) (MAX) @ 2.2 A
500 V
1.5 W
N−Channel
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Symbol
NDF
VDSS
NDD
500
V
Continuous Drain Current RqJC
ID
5.5
(Note 1)
4.7
A
Continuous Drain Current
RqJC, TA = 100°C
ID
3.5
(Note 1)
3
A
Pulsed Drain Current, VGS @ 10 V
IDM
20
19
A
Power Dissipation RqJC
PD
30
83
W
Gate−to−Source Voltage
VGS
±30
V
Single Pulse Avalanche Energy, ID =
5.0 A
EAS
130
mJ
ESD (HBM) (JESD22−A114)
Vesd
3000
V
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, TA = 25°C) (Figure 17)
VISO
Peak Diode Recovery (Note 2)
dv/dt
4.5
V/ns
IS
5
A
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
D (2)
Unit
4500
G (1)
S (3)
V
TL
260
°C
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. IS = 4.4 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
1
1
2
3
NDF05N50ZG
TO−220FP
CASE 221D
2
3
NDF05N50ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD05N50Z−1G
IPAK
CASE 369D
1 2
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 6
1
Publication Order Number:
NDF05N50Z/D
NDF05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Symbol
Value
Unit
NDF05N50Z
NDD05N50Z
RqJC
4.2
1.5
°C/W
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
(Note 3) NDD05N50Z−1
RqJA
50
38
80
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
BVDSS
VGS = 0 V, ID = 1 mA
500
DBVDSS/
DTJ
Reference to 25°C,
ID = 1 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
IDSS
VDS = 500 V, VGS = 0 V
IGSS
VGS = ±20 V
Static Drain−to−Source
On−Resistance
RDS(on)
VGS = 10 V, ID = 2.2 A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 50 mA
gFS
VDS = 15 V, ID = 2.5 A
V
0.6
V/°C
25°C
1
150°C
50
mA
±10
mA
1.25
1.5
W
3.9
4.5
V
ON CHARACTERISTICS (Note 5)
Forward Transconductance
3.0
3.5
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Ciss
Output Capacitance (Note 6)
Coss
Reverse Transfer Capacitance
(Note 6)
Crss
Total Gate Charge (Note 6)
Qg
Gate−to−Source Charge (Note 6)
Qgs
Gate−to−Drain (“Miller”) Charge
(Note 6)
Qgd
Plateau Voltage
VGP
Gate Resistance
Rg
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 250 V, ID = 5 A,
VGS = 10 V
421
530
632
50
68
80
8
15
25
9
18.5
28
2
4
6
5
10
15
6.5
1.5
4.5
pF
nC
V
8
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
11
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 5 W
tf
15
24
14
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
IS = 5 A, VGS = 0 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VGS = 0 V, VDD = 30 V
IS = 5 A, di/dt = 100 A/ms
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
6. Guaranteed by design.
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2
1.6
V
255
ns
1.25
mC
NDF05N50Z, NDD05N50Z
10.0
10.0
9.0
9.0
VGS = 8 V to 10 V
8.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
7.0 V
7.0
6.5 V
6.0
5.0
4.0
6.0 V
3.0
2.0
5.5 V
1.0
0.0
8.0
7.0
6.0
5.0
TJ = 25°C
4.0
TJ = 150°C
3.0
TJ = −55°C
2.0
1.0
5.0 V
0
VDS = 25 V
5
10
15
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25
0.0
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
2.50
ID = 2.2 A
TJ = 25°C
2.25
2.00
1.75
1.50
1.25
1.00
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.500
VGS = 10 V
TJ = 25°C
2.250
2.000
1.750
1.500
1.250
1.000
0.0
0.5
2.25
ID = 2.2 A
VGS = 10 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50
−25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2.75
1.0
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.50
10
150
1.15
ID = 1 mA
1.10
1.05
1.00
0.95
0.90
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 6. BVDSS Variation with Temperature
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3
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
1200
10.0
TJ = 150°C
1100
TJ = 25°C
VGS = 0 V
f = 1 MHz
C, CAPACITANCE (pF)
1.0
900
800
700
600
Ciss
500
400
300
200
100
0.1
0
50
0
100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
Figure 7. Drain−to−Source Leakage Current
versus Voltage
5
10 15 20 25 30 35 40 45
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
Figure 8. Capacitance Variation
300
VGS, GATE−TO−SOURCE VOLTAGE (V)
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Coss
Crss
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (mA)
1000
250
VDS
200
VGS
QGS
QGD
150
100
VDS = 250 V
ID = 5 A
TJ = 25°C
0
2
4
6
8
10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
18
50
0
20
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
100
VDD = 250 V
ID = 5 A
VGS = 10 V
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
1000
td(off)
tr
tf
td(on)
10
1.0
1
10
RG, GATE RESISTANCE (W)
10
TJ = 150°C
1.0
125°C
0.1
100
25°C
−55°C
0.3
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
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4
1.2
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
10
100
VGS ≤ 30 V
SINGLE PULSE
TC = 25°C
100 ms
1 ms
10 ms
dc
10 ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
10
VGS v 30 V
SINGLE PULSE
TC = 25°C
10 ms
dc
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1000
100 ms
1 ms
10 ms
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area NDF05N50Z
Figure 13. Maximum Rated Forward Biased
Safe Operating Area NDD05N50Z
10
50% (DUTY CYCLE)
R(t) (C/W)
1
20%
10%
5.0%
0.1
2.0%
1.0%
0.01
1E−06
RqJA = 4.2°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case) for NDF05N50Z
10
R(t) (C/W)
1 50% (DUTY CYCLE)
20%
10%
0.1
5.0%
2.0%
1.0%
0.01
1E−06
RqJC = 1.5°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 15. Thermal Impedance (Junction−to−Case) for NDD05N50Z
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5
1E+02
1E+03
NDF05N50Z, NDD05N50Z
TYPICAL CHARACTERISTICS
R(t) (C/W)
100
10 50% (DUTY CYCLE)
20%
10%
1 5.0%
2.0%
1.0%
0.1
0.01
1E−06
RqJA = 38°C/W
Steady State
SINGLE PULSE
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
PULSE TIME (s)
Figure 16. Thermal Impedance (Junction−to−Ambient) for NDD05N50Z
LEADS
HEATSINK
0.110″ MIN
Figure 17. Isolation Test Diagram
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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6
1E+02
1E+03
NDF05N50Z, NDD05N50Z
ORDERING INFORMATION
Package
Shipping†
NDF05N50ZG
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDF05N50ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDD05N50Z−1G
IPAK
(Pb−Free, Halogen−Free)
75 Units / Rail
NDD05N50ZT4G
DPAK
(Pb−Free, Halogen−Free)
2500 / Tape and Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
4
Drain
Source
1 2 3
Gate Drain Source
Drain
TO−220FP
IPAK
A
Y
WW
G, H
4
Drain
YWW
5N
50ZG
Gate
YWW
5N
50ZG
NDF05N50ZG
or
NDF05N50ZH
AYWW
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
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7
2
1 Drain 3
Gate Source
DPAK
NDF05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
Y
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
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8
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
NDF05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE D
A
E
B
P
E/2
0.14
Q
D
M
B A
M
A
H1
A1
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
SEATING
PLANE
c
b
0.25
M
B A
M
C
A2
e
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9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.10
3.00
3.40
2.80
3.20
NDF05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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10
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
NDF05N50Z, NDD05N50Z
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369AA
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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http://onsemi.com
11
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
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