ON NTJD4152P Trench small signal mosfet Datasheet

NTJD4152P, NVJD4152P
Trench Small Signal
MOSFET
20 V, 0.88 A, Dual P−Channel,
ESD Protected SC−88
Features
•
•
•
•
•
Leading Trench Technology for Low RDS(ON) Performance
Small Footprint Package (SC70−6 Equivalent)
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices
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V(BR)DSS
RDS(on) Typ
ID Max
215 mW @ −4.5 V
−20 V
−0.88 A
345 mW @ −2.5 V
600 mW @ −1.8 V
Applications
•
•
•
•
Load/Power Management
Charging Circuits
Load Switching
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
Parameter
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
ID
−0.88
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
Continuous Drain
Current (Note 2)
tv5s
TA = 25°C
Power Dissipation
(Note 2)
tv5s
TA = 85°C
PD
ID
0.272
G1
2
5
G2
D2
3
4
S2
W
−1.0
MARKING DIAGRAM &
PIN ASSIGNMENT
A
PD
0.35
W
0.181
IDM
±3.0
A
TJ,
TSTG
−55 to
150
°C
Continuous Source Current (Body Diode)
IS
−0.48
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
D1
Top View
−0.72
TA = 85°C
t ≤ 10 ms
6
0.141
TA = 85°C
Pulsed Drain Current
1
−0.63
TA = 85°C
TA = 25°C
S1
D1 G2 S2
1
SC−88/SOT−363
CASE 419B
STYLE 26
6
XXX MG
G
1
S1 G1 D2
XXX
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol
Max
Junction−to−Ambient – Steady State
RqJA
460
Junction−to−Ambient − t v 5 s
RqJA
357
Junction−to−Lead – Steady State
RqJL
226
Unit
ORDERING INFORMATION
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), steady state.
2. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces), t v 5 s.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 6
1
Publication Order Number:
NTJD4152P/D
NTJD4152P, NVJD4152P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V, VDS = −16 V
V
TJ = 25°C
−1.0
TJ = 125°C
mA
−1.0
−5.0
VDS = 0 V, VGS = ±4.5 V
0.03
1.0
mA
VDS = 0 V, VGS = ±12 V
6.0
−1.2
V
mW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −0.88 A
215
260
VGS = −2.5 V, ID = −0.71 A
345
500
VGS = −1.8 V, ID = −0.20 A
600
1000
VDS = −10 V, ID = −0.88 A
3.0
S
155
pF
Forward Transconductance
gFS
−0.45
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −20 V
18
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
25
nC
2.2
VGS = −4.5 V, VDS = −10 V,
ID = −0.88 A
0.5
0.65
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
5.8
VGS = −4.5 V, VDD = −10 V,
ID = −0.5 A, RG = 20 W
tf
6.5
13.5
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −0.48 A
TJ = 25°C
−0.8
TJ = 125°C
−0.66
−1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTJD4152P, NVJD4152P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1
1
TJ = 25°C
−2 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
VGS = −4.5, −3.5 & −2.5 V
−1.75 V
0.75
0.5
−1.5 V
0.25
−1.25 V
−1 V
0
0.4
0
0.8
0.8
0.7
0.6
0.5
0.4
125°C
0.3
0.2
25°C
0.1
TJ = −55°C
0
1.6
1.2
VDS ≥ −20 V
0.9
2
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.3
VGS = −4.5 V
TJ = 125°C
0.25
0.2
TJ = 25°C
0.15
TJ = −55°C
0.1
0
0.25
0.5
1
0.75
−ID, DRAIN CURRENT (AMPS)
2.5
TJ = 25°C
2.0
VGS = −1.8 V
1.5
1.0
0.5
0.5
0.6
0.7
0.8
0.9
1
−ID, DRAIN CURRENT (AMPS)
10000
VGS = 0 V
ID = −0.88 A
VGS = −4.5 V
−IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VGS = −4.5 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.6
1.4
TJ = 150°C
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
VGS = −2.5 V
0
0.4
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.8
0.5
1
1.5
2
2.5
3
3.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 125°C
100
10
−25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
5
15
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
0
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3
20
NTJD4152P, NVJD4152P
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
350
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
300
250
Crss
200
150
100
50
Coss
0
10
5
VGS
0
VDS
5
15
10
20
5
QT
4
3
Q1
1
ID = −0.88 A
TJ = 25°C
0
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.8
1.2
1.6
Qg, TOTAL GATE CHARGE (nC)
2
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
100
0.5
−IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Q2
2
td(off)
tr
10
td(on)
VDD = −10 V
ID = −0.8 A
VGS = −4.5 V
tf
1
VGS = 0 V
TJ = 25°C
0.4
0.3
0.2
0.1
0
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Marking
NTJD4152PT1G
TK
NTJD4152PT2G
TK
NVJD4152PT1G*
VTK
Package
Shipping†
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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4
NTJD4152P, NVJD4152P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
L
L2
E1
E
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
ddd
TOP VIEW
M
A2
C A-B D
DETAIL A
A
6X
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
END VIEW
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTJD4152P/D