Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 0, 10/2012 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 16.7 30.5 7.2 --35.7 --19 2140 MHz 17.0 31.0 7.1 --35.4 --20 2170 MHz 17.2 31.8 7.0 --34.8 --15 AFT21S230SR3 AFT21S232SR3 2110--2170 MHz, 50 W AVG., 28 V Features • • • • • Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications NI--780S--6: R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. NI--780S--2: R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 18. N.C. 1 6 VBW RFin/VGS 2 5 RFout/VDS 4 VBW N.C. 3 (Top View) NI--780S--6 AFT21S230S Figure 1. Pin Connections RFin/VGS 2 1 RFout/VDS (Top View) NI--780S--2 AFT21S232S Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2012. All rights reserved. © Freescale Semiconductor, Inc., 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. AFT21S230SR3 AFT21S232SR3 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature Range TC --40 to +150 °C Operating Junction Temperature Range (1,2) TJ --40 to +225 °C CW 163 0.79 W W/°C Symbol Value (2,3) Unit CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 50 W CW, 28 Vdc, IDQ = 1500 mA, 2110 MHz Case Temperature 86°C, 140 W CW(4), 28 Vdc, IDQ = 1500 mA, 2110 MHz RθJC °C/W 0.43 0.38 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) B Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 291 μAdc) VGS(th) 1.5 2.0 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test) VGS(Q) 2.2 2.7 3.2 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.7 Adc) VDS(on) 0.1 0.2 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16.0 16.7 19.0 dB Drain Efficiency ηD 29.0 30.5 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 6.7 7.2 — dB ACPR — --35.7 --34.0 dBc IRL — --19 --10 dB 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 5. Part internally matched both on input and output. (continued) AFT21S230SR3 AFT21S232SR3 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1500 mA, f = 2140 MHz VSWR 10:1 at 32 Vdc, 269 W CW Output Power (3 dB Input Overdrive from 182 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW AM/PM (Maximum value measured at the P3dB compression point across the 2110--2170 MHz bandwidth) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) P1dB — 182 (1) — W Φ — --19.3 — ° VBWres — — MHz AFT21S230S AFT21S232S 95 60 Gain Flatness in 60 MHz Bandwidth @ Pout = 50 W Avg. GF — 0.5 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.016 — dB/°C ∆P1dB — 0.007 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (1) 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 3 C1 C22 C5 C4 C8 C2 C13* C18 R1 C19 C12* C10* CUT OUT AREA C11* C16* R2 C17 C14* C20 C21 C15* C9 C6 C7 C23 C3 AFT21S232S/AFT21S230S Rev. 0 *C10, C11, C12, C13, C14, C15 and C16 are mounted vertically. Figure 3. AFT21S230SR3(232SR3) Test Circuit Component Layout Table 5. AFT21S230SR3(232SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 470 μF, 63 V Electrolytic Capacitor B41694A5477Q7 EPCOS C2, C3, C4, C5, C6, C7, C22, C23 10 μF, 100 V Chip Capacitors C5750X7S2A106M TDK C8, C9, C10, C11, C12, C13, C14, C15 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C16 0.6 pF Chip Capacitor ATC100B0R6BT500XT ATC C17 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C18, C19, C20, C21 1 μF, 50 V Chip Capacitors CDR34BX104AKWS AVX R1, R2 8.2 Ω, 1/4 W Chip Resistors RC1206FR--108R2L Yageo PCB 0.020″, εr = 3.5 RO4350B Rogers AFT21S230SR3 AFT21S232SR3 4 RF Device Data Freescale Semiconductor, Inc. 17.5 ηD 32 31 30 Gps 17 16.5 ACPR PARC --32 --4 --33 --8 16 --34 15.5 --35 15 --36 14.5 2060 IRL 2080 2100 2120 2140 2160 2180 --12 --16 --20 --37 2220 2200 --24 --2 --2.4 --2.8 --3.2 --3.6 PARC (dB) 33 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1500 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 18.5 Input Signal PAR = 9.9 dB @ 0.01% 18 Probability on CCDF IRL, INPUT RETURN LOSS (dB) 34 19 ηD, DRAIN EFFICIENCY (%) 19.5 ACPR (dBc) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS --4 f, FREQUENCY (MHz) --10 IM3--U --30 IM3--L IM5--L --40 IM7--L IM5--U IM7--U 1 100 10 200 --10 VDD = 28 Vdc, Pout = 172 W (PEP), IDQ = 1500 mA Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 2140 MHz IM3--U --30 IM3--L IM5--L --40 IM5--U IM7--L --50 --60 IM7--U 1 100 10 200 TWO--TONE SPACING (MHz) TWO--TONE SPACING (MHz) Figure 5a. Intermodulation Distortion Products versus Two--Tone Spacing — AFT21S230S Figure 5b. Intermodulation Distortion Products versus Two--Tone Spacing — AFT21S232S 17.5 0 17 16.5 16 15.5 15 VDD = 28 Vdc, IDQ = 1500 mA, f = 2140 MHz Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth ηD ACPR --1 --2 dB = 38 W --3 dB = 49 W Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 25 40 55 --25 20 PARC --5 35 25 Gps --3 --4 --20 30 --1 dB = 28 W --2 40 70 --30 --35 ACPR (dBc) 1 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18 ηD, DRAIN EFFICIENCY (%) --50 --60 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 172 W (PEP), IDQ = 1500 mA Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 2140 MHz Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. --40 15 --45 10 --50 85 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 19 18 ACPR 30 17 2110 MHz 16 2140 MHz 20 2170 MHz 15 10 2140 MHz 2110 MHz 14 10 1 100 0 --10 0 200 --20 --30 --40 ACPR (dBc) 60 VDD = 28 Vdc, IDQ = 1500 mA, Single--Carrier 2110 MHz W--CDMA, 3.84 MHz Channel Bandwidth 50 2140 MHz Input Signal PAR = 9.9 dB @ 0.01% ηD Probability on CCDF 2170 MHz 40 Gps 2170 MHz ηD, DRAIN EFFICIENCY (%) 20 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 21 VDD = 28 Vdc Pin = 0 dBm IDQ = 1500 mA 20 Gain GAIN (dB) 17 10 15 0 IRL 13 --10 11 --20 9 1800 1900 2000 2100 2200 2300 2400 2500 IRL (dB) 19 30 --30 2600 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response AFT21S230SR3 AFT21S232SR3 6 RF Device Data Freescale Semiconductor, Inc. VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power f (MHz) Zsource (Ω) Zin (Ω) Zload (Ω) (1) P1dB P3dB Max Linear Gain (dB) (dBm) (W) ηD (%) AM/PM (°) (dBm) (W) ηD (%) AM/PM (°) 2110 1.20 - j6.00 1.20 + j5.90 1.50 - j3.90 17.7 54.3 269 55.4 11 55.2 331 57.0 16 2140 1.70 - j6.40 1.50 + j6.30 1.60 - j4.00 17.7 54.3 269 55.1 10 55.2 331 56.0 15 2170 1.70 - j6.80 1.75 + j6.70 1.50 - j4.00 17.8 54.3 269 54.7 11 55.2 331 56.0 16 (1) Load impedance for optimum P1dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 9. Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQ = 1500 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency P1dB f (MHz) Zsource (Ω) Zin (Ω) Zload (1) (Ω) Max Linear Gain (dB) (dBm) 2110 1.20 - j6.00 1.20 + j5.93 2.10 - j2.41 20.0 2140 1.70 - j6.40 1.40 + j6.30 1.80 - j2.60 2170 1.70 - j6.80 1.80 + j6.80 1.70 - j2.60 P3dB (W) ηD (%) AM/PM (°) (dBm) (W) ηD (%) AM/PM (°) 52.7 186 64.9 16 54.3 269 66.2 20 19.8 52.8 191 64.2 16 53.4 219 65.4 24 20.0 52.8 191 64.2 17 54.2 263 65.5 22 (1) Load impedance for optimum P1dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Input Load Pull Tuner and Test Circuit Output Load Pull Tuner and Test Circuit Device Under Test Zsource Zin Zload Figure 10. Load Pull Performance — Maximum Drain Efficiency Tuning AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 7 P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz --1.5 --1.5 62 51.5 50 --2.5 50.5 51 52.5 E 53 --3 53.5 --3.5 60 --2 52 IMAGINARY (Ω) IMAGINARY (Ω) --2 64 --2.5 E --3 --3.5 60 54 --4 --4 P --4.5 0.5 1 1.5 2 2.5 --4.5 3 48 50 52 0.5 58 54 56 1.5 2 2.5 3 REAL (Ω) REAL (Ω) Figure 11. P1dB Load Pull Output Power Contours (dBm) Figure 12. P1dB Load Pull Efficiency Contours (%) --1.5 --1.5 19.5 --2 --2 --26 --24 --22 --20 --18 --16 --2.5 E 18.5 --3 17 16.5 16 --3.5 18 --4 --4.5 IMAGINARY (Ω) 19 IMAGINARY (Ω) 1 P 17.5 P 0.5 1 1.5 2 --2.5 --3 3 --12 --3.5 --10 --4 2.5 --14 E --4.5 0.5 P 1 1.5 2 2.5 REAL (Ω) REAL (Ω) Figure 13. P1dB Load Pull Gain Contours (dB) Figure 14. P1dB Load Pull AM/PM Contours (°) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency 3 Power Gain Drain Efficiency Linearity Output Power AFT21S230SR3 AFT21S232SR3 8 RF Device Data Freescale Semiconductor, Inc. P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz --1.5 --1.5 IMAGINARY (Ω) 51.5 52 58 --2 53 --2.5 E IMAGINARY (Ω) 51 --2 52.5 53.5 --3 54 --3.5 55 --4 --4.5 1 1.5 2 2.5 3 --3.5 64 62 52 50 48 1 56 P 58 1.5 2 2.5 3 3.5 REAL (Ω) REAL (Ω) Figure 15. P3dB Load Pull Output Power Contours (dBm) Figure 16. P3dB Load Pull Efficiency Contours (%) --1.5 --1.5 17.5 --2 --2 17 --2.5 E IMAGINARY (Ω) IMAGINARY (Ω) --3 --4.5 3.5 60 E 54 --4 54.5 P --2.5 16.5 --3 16 --3.5 15 14.5 14 --4 15.5 --30 --28 --26 --24 --22 --20 --2.5 --3 1 1.5 --18 --3.5 --16 --4 P --4.5 E P 2 2.5 3 3.5 --4.5 1 1.5 --14 2 2.5 3 3.5 REAL (Ω) REAL (Ω) Figure 17. P3dB Load Pull Gain Contours (dB) Figure 18. P3dB Load Pull AM/PM Contours (°) NOTE: P = Maximum Output Power E = Maximum Drain Efficiency Power Gain Drain Efficiency Linearity Output Power AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS AFT21S230SR3 AFT21S232SR3 10 RF Device Data Freescale Semiconductor, Inc. AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 11 AFT21S230SR3 AFT21S232SR3 12 RF Device Data Freescale Semiconductor, Inc. AFT21S230SR3 AFT21S232SR3 RF Device Data Freescale Semiconductor, Inc. 13 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, software and tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File Development Tools • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION NI--780S--6: R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel. NI--780S--2: R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for AFT21S230S and AFT21S232S parts will be available for 2 years after release of AFT21S230S and AFT21S232S. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased this device in the R5 tape and reel option will be offered AFT21S230S and AFT21S232S in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2012 Description • Initial Release of Data Sheet AFT21S230SR3 AFT21S232SR3 14 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire, C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack, ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2012 Freescale Semiconductor, Inc. AFT21S230SR3 AFT21S232SR3 Document Number: RF Device Data AFT21S230S_232S Rev. 0, 10/2012 Freescale Semiconductor, Inc. 15