Din-Tek Preliminary Datasheet '76 DINDS0290EJ0400 (Previous: DIN03G1317-0300) Rev.4.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features Low on-resistance RDS(on) = m typ (VGS = –4.5 V, ID = –1.8 A) Low drive current High speed switching 2.5 V gate drive Outline Package code: PLSP0003ZB-A (Package name: SOT-23) 3 3 2 1 D G 1. Source 2. Gate 3. Drain 2 1 Note: S Marking is “018K”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS Ratings –20 +8 / –12 Unit V V ID ID(pulse) Note1 IDR Pch(pulse) Note2 Tch Tstg –3.8 –11 –3.8 0.8 150 –55 to +150 A A A W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 Page 1 of 6 '76 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) Min –20 +8 –12 — — — –0.5 Typ — — — — — — — Max — — — +10 –10 –1 –1.5 Unit V V V A A A V Test conditions ID = –10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = –100 A, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA RDS(on) — 68 98 m ID = –1.8 A, VGS = –4.5 V Note3 RDS(on) — 95 115 m ID = –1.8 A, VGS = –2.5 V Note3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time |yfs| Ciss Coss Crss td(on) tr td(off) 4.5 — — — — — — 6.5 597 149 93 18 43 37 — — — — — — — S pF pF pF ns ns ns ID = –1.8 A, VDS = –10 VNote3 Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage tf Qg Qgs Qgd VDF — — — — — 12 6.3 1.1 2.5 –0.85 — — — — –1.1 ns nC nC nC V Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance VDS = –10 V VGS = 0 f = 1 MHz ID = –1.8 A VGS = –4.5 V RL = 5.5 Rg = 4.7 VDD = –10 V VGS = –4.5 V ID = –3.8 A IF = –3.8 A, VGS = 0 Note3 Notes: 3. Pulse test DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 Page 2 of 6 DTS2301 Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area Channel Dissipation Pch (W) 1 –100 Drain Current ID (A) 0.8 0.6 0.4 0.2 0 Operation in this area is limited by RDS(on) –10 1 m s PW 10 m s = 10 DC 0 O m pe s ra tio n –1 –0.1 Ta = 25°C 1 Shot Pulse 0 50 100 –0.01 –0.01 150 –100 Typical Transfer Characteristics (1) –10 –2.6 V –2.4 V Pulse Test Tc = 25°C –6 –2.2 V –2.0 V –4 –1.8 V –2 –1.6 V Drain Current ID (A) Drain Current ID (A) –10 Typical Output Characteristics –3 V –6 V –10 V VGS = 0 V 0 –1 Drain to Source Voltage VDS (V) –10 –8 –0.1 Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) 0 100 μs –2 –4 –6 –8 –8 –6 –4 –2 0 –10 VDS = –10 V Pulse Test Tc = 75°C 0 Drain to Source Voltage VDS (V) –1 –25°C 25°C –2 –3 –4 Gate to Source Voltage VGS (V) Drain Current ID (A) –1 VDS = –10 V Pulse Test –0.1 –0.01 Tc = 75°C 25°C –0.001 –25°C –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 Gate to Source Voltage VGS (V) DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature –1.5 VDS = –10 V Pulse Test ID = –10 mA –1 –1 mA –0.5 0 –25 –0.1 mA 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary –400 Pulse Test Tc = 25°C –300 –200 ID = –3.4 A –1.8 A –100 –1 A –0.5 A 0 0 –2 –4 –6 –8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage –10 1000 Pulse Test Tc = 25°C VGS = –2.5 V 100 –4.5 V –10 V 10 –0.1 –1 –10 –100 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 130 130 ID = –3.4 A 110 –1.8 A 90 –1 A 70 –0.5 A 50 Pulse Test VGS = –2.5 V 30 –25 25 50 75 100 125 150 Pulse Test VGS = –4.5 V 110 90 –1.8 A ID = –3.4 A 70 –1 A 50 –0.5 A 30 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature –10000 Pulse Test VDS = –10 V 10 –25°C 1 25°C 0.1 0.01 –0.01 IDSS (nA) 100 0 Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) Tc = 75°C –0.1 –1 Drain Current ID (A) DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 –10 Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) '76 Pulse Test VGS = 0 V –1000 VDS = –20 V –100 –10 –1 –0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 '76 Preliminary Switching Characteristics 0 VDS VDD = –20 V –10 V –5 V –5 V –10 V –20 –4 –8 VDD = –20 V VGS –12 ID = –3.4 A Tc = 25°C –40 0 2 4 6 8 10 –16 16 12 1000 Switching Time t (ns) 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 VDD = –10 V VGS = –4.5 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C tr td(on) td(off) tf 10 1 –0.1 –1 –10 Gate Charge Qg (nc) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 1100 1000 1050 Coss 100 Crss Ciss (pF) Ciss, Coss, Crss (pF) Ciss –5 –10 –15 800 –10 –8 –6 –4 –2 –20 0 2 4 6 8 10 Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature Pulse Test Tc = 25°C –8 –5V –6 –4 –2 5, 10 V VGS = 0 V –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) VDS = 0 V f = 1 MHz Gate to Source Voltage VGS (V) –10V 0 900 Drain to Source Voltage VDS (V) –10 0 950 850 VGS = 0 V f = 1 MHz 10 –0 1000 –0.6 VGS = 0 –0.5 ID = –10 mA –0.4 –0.3 –1 mA –0.2 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 '76 Preliminary Package Dimensions JEITA Package Code SC-59A Package Name SOT-23 DIN-TEK Code PLSP0003ZB-A D Previous Code SOT-23 A e E Q A x M S A c HE L A MASS[Typ.] 0.011g LP L1 A3 b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.95 0.3 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 Ordering Information Orderable Part Number DIN-TEKRQJDTS2301H DINDS0290EJ0400 Rev.4.00 Mar 28, 2011 Quantity 3000 pcs. 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