Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary NPN type available MMBT3906T Pb Lead-free (MMBT3904T). z Low Current (Max:-200mA). z Low Voltage(Max:-40V). APPLICATIONS z Ideal for medium power amplification and switching. SOT-523 ORDERING INFORMATION Type No. MMBT3906T Marking Package Code 3N SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER MMBT3906T UNIT VCBO collector-base voltage -40 V VCEO collector-emitter voltage -40 V VEBO emitter-base voltage -5 V IC collector current (DC) -200 mA Pd Power dissipation 150 mW RθJA Thermal resistance, junction to Ambient 833 °C/W Tstg storage temperature range -55 to +150 °C Tj junction temperature 150 °C H015 Rev.A www.gmicroelec.com 1 Production specification PNP General Purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ MMBT3906T unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. V(BR)CBO Collector-base breakown voltage IC=-10μA,IE=0 -40 V(BR)CEO Collector- emitter breakown voltage IC=-1.0mA,IB=0 -40 V(BR)BEO Emitter-base breakown voltage IE=-10μA,IC=0 -5 ICBO Collector cut-off current IE=0,VCB=-30V -50 nA IEBO Emitter cut-off current IC=0,VEB=-5V -50 nA ICEX collector cut-off current VCE=-30V,VEB(OFF)=-3.0V -50 nA IBL Base cut-off current VCE=-30V, VEB(OFF)=-3.0V -50 nA hFE DC current gain VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA VCE（sat） collector-emitter saturation voltage VBE（sat） base-emitter saturation voltage Cobo Output capacitance Cibo 60 80 100 60 30 MAX. UNIT 300 IC=-10mA,IB=-1mA -250 mV IC=-50mA,IB=-5mA -400 mV -850 mV -950 mV IE=0,VCB=-5V,f=1MHz 4.5 pF Input capacitance IC=0,VBE=-0.5V,f =1MHz 10 pF fT transition frequency IC=-10mA,VCE =-20V,f=100MHz td delay time - 35 ns tr rise time IC=-10mA,IB1=-1mA,VBE(off)=-0.5V VCC=-3.0V - 35 ns ts storage time - 225 ns tf fall time VCC=-3.0V, IC=-10mA IB1=IB2=-1mA - 75 ns H015 Rev.A IC=-10mA; IB=-1mA -650 IC=-50mA; IB=-5mA 250 MHz www.gmicroelec.com 2 Production specification PNP General Purpose Transistor MMBT3906T TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified H015 Rev.A www.gmicroelec.com 3 Production specification PNP General Purpose Transistor MMBT3906T PACKAGE OUTLINE Plastic surface mounted package SOT-523 A SOT-523 C K B J D G H Dim Min Max A 1.5 1.7 B 0.75 0.85 C 0.6 0.8 D 0.15 0.3 G 0.9 1.1 H 0.02 0.1 J K 0.1Typical 1.45 1.75 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBT3906T SOT-523 3000/Tape&Reel H015 Rev.A www.gmicroelec.com 4