Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 4, 5/2006 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. 40 - 3600 MHz, 20 dB 24 dBm InGaP HBT Features • Frequency: 40 - 3600 MHz • P1dB: 24 dBm @ 900 MHz • Small - Signal Gain: 20 dB @ 900 MHz • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz • Single Voltage Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Symbol Gp 2140 MHz 3500 MHz Unit 20 16.9 12 dB Input Return Loss (S11) IRL Output Return Loss (S22) ORL - 9.3 −14.5 - 10.2 dB Power Output @1dB Compression P1db 24 23.3 20.5 dBm IP3 40.5 40 37 dBm Third Order Output Intercept Point 3 CASE 1514 - 01, STYLE 1 SOT - 89 PLASTIC Table 2. Maximum Ratings 900 MHz - 15 12 - 14.1 - 11.2 dB Rating Symbol Value Unit Supply Voltage (2) VCC 7 V Supply Current (2) ICC 400 mA RF Input Power Pin 15 dBm Storage Temperature Range Tstg - 65 to +150 °C Junction Temperature (3) TJ 150 °C 2. Voltage and current applied to device. 3. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 6.2 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 6.2 Vdc, ICC = 180 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (4) Unit RθJC 31.6 °C/W 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. Freescale Semiconductor RF Product Device Data MMG3003NT1 6-1 Table 4. Electrical Characteristics (VCC = 6.2 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 19.3 20 — dB Input Return Loss (S11) IRL — - 15 — dB Output Return Loss (S22) ORL — - 9.3 — dB Power Output @ 1dB Compression P1dB — 24 — dBm Third Order Output Intercept Point IP3 — 40.5 — dBm Noise Figure NF — 4 — dB Supply Current (1) ICC 160 180 205 mA Supply Voltage (1) VCC — 6.2 — V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3003NT1 6-2 Freescale Semiconductor RF Product Device Data Table 5. Functional Pin Description Pin Number 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22 - A114) 1B (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C MMG3003NT1 Freescale Semiconductor RF Product Device Data 6-3 50 OHM TYPICAL CHARACTERISTICS 25 0 S22 25°C −40°C 20 −10 S11, S22(dB) Gp, SMALL−SIGNAL GAIN (dB) TC = 85°C 15 −20 S11 VCC = 6.2 Vdc ICC = 180 mA VCC = 6.2 Vdc 10 −30 0 1 2 3 4 3 4 f, FREQUENCY (GHz) Figure 3. Input/Output Return Loss versus Frequency 900 MHz, C5 = 2.7 pF 19 1960 MHz, C5, C6 = 1.3 pF 17 2140 MHz, C5, C6 = 1.3 pF 15 2600 MHz, C5 = 1.2 pF 13 3500 MHz, C5 = 0.5 pF 11 VCC = 6.2 Vdc ICC = 180 mA 9 5 10 15 20 P1dB, 1 dB COMPRESSION POINT (dBm) 25 21 24 23 22 21 20 19 VCC =6.2 Vdc ICC = 180 mA 18 17 0.5 25 1 1.5 2 2.5 3 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 200 150 100 50 0 4 4.5 5 5.5 6 VCC, COLLECTOR VOLTAGE (V) Figure 6. Collector Current versus Collector Voltage 6.5 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Gp, SMALL−SIGNAL GAIN (dB) 2 Figure 2. Small - Signal Gain (S21) versus Frequency 23 ICC, COLLECTOR CURRENT (mA) 1 0 f, FREQUENCY (GHz) 3.5 45 42 39 36 VCC = 6.2 Vdc ICC = 180 mA 100 kHz Tone Spacing 33 30 0 1 2 3 4 f, FREQUENCY (GHz) Figure 7. Third Order Output Intercept Point versus Frequency MMG3003NT1 6-4 Freescale Semiconductor RF Product Device Data IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS 45 42 39 36 33 f = 900 MHz 100 kHz Tone Spacing 30 6 5.8 6.2 6.4 6.6 VCC, COLLECTOR VOLTAGE (V) 42 41 40 39 −40 0 20 40 60 80 100 T, TEMPERATURE (_C) 105 −30 −40 MTTF (YEARS) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Collector Voltage −50 −60 −70 103 12 15 18 21 24 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Third Order Intermodulation versus Output Power Figure 11. MTTF versus Junction Temperature 6 4 2 VCC = 6.2 Vdc ICC = 180 mA 0 0.5 1 1.5 2 2.5 3 3.5 NOTE: The MTTF is calculated with VCC = 6.2 Vdc, ICC = 180 mA ACPR, ADJACENT CHANNEL POWER RATIO (dB) 8 0 104 VCC = 6.2 Vdc ICC = 180 mA f = 900 MHz 100 kHz Tone Spacing −80 9 NF, NOISE FIGURE (dB) VCC = 6.2 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 10 W Dropping Resistor 4 −20 VCC = 6.2 Vdc ICC = 180 mA f = 2140 MHz C5 = 1.3 pF Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 −50 −60 −70 9 11 13 15 17 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 19 MMG3003NT1 Freescale Semiconductor RF Product Device Data 6-5 50 OHM APPLICATION CIRCUIT: 40- 800 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1 Z2 Z3 Z4 0.347″ 0.575″ 0.172″ 0.403″ Z3 Z4 C2 VCC x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip Z5 Z5 Z6 PCB RF OUTPUT Z6 C5 0.286″ x 0.058″ Microstrip 0.061″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 S21, S11, S22 (dB) 20 R1 C4 C3 10 L1 0 C2 C1 S22 −10 C5 −20 VCC = 6.2 Vdc ICC = 180 mA S11 −30 200 0 400 600 MMG30XX Rev 2 800 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C4 0.01 μF Chip Capacitors 0603A103JAT2A AVX C3 68 pF Chip Capacitor 0805K680JBT AVX C5 (1) 2.7 pF Chip Capacitor for 40 - 800 MHz 12105J2R7BBT AVX L1 470 nH Chip Inductor BK2125HM471 Taiyo Uden R1 7.5 W Chip Resistor RK73B2AT7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. Table 9. Supply Voltage versus R1 Values Supply Voltage 7 8 9 10 11 12 V R1 Value 4.4 10 15.6 21 27 32 Ω Note: To provide VCC = 6.2 Vdc and ICC = 180 mA at the device. MMG3003NT1 6-6 Freescale Semiconductor RF Product Device Data 50 OHM APPLICATION CIRCUIT: 800 - 1100 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z6 Z2 Z3 Z3 Z4 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip Z4 Z5 PCB Z6 Z5 C5 VCC RF OUTPUT C2 0.333″ x 0.058″ Microstrip 0.07″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 S21 20 R1 S21, S11, S22 (dB) 10 C4 C3 0 L1 S22 −10 C2 C1 C5 −20 S11 −30 VCC = 6.2 Vdc ICC = 180 mA −40 600 700 800 900 1000 1100 MMG30XX Rev 2 1200 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors 0805K470JBT AVX C3 68 pF Chip Capacitor 0805K680JBT AVX C4 0.01 μF Chip Capacitor 0603A103JAT2A AVX C5 (1) 2.7 pF Chip Capacitor for 800 - 1100 MHz 06035J2R7BBT AVX L1 22 nH Chip Inductor HK160822NJ - T Taiyo Uden R1 7.5 W Chip Resistor RK73B2AT7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 Freescale Semiconductor RF Product Device Data 6-7 50 OHM APPLICATION CIRCUIT: 1800- 2400 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z3 Z4 Z1, Z7 Z2 Z3 Z4 0.347″ 0.575″ 0.172″ 0.047″ Z6 Z5 C6 C5 VCC x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip x 0.058″ Microstrip Z5 Z6 PCB RF OUTPUT Z7 C2 0.062″ x 0.058″ Microstrip 0.466″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 30 20 S21 R1 C4 C3 S21, S11, S22 (dB) 10 0 L1 S11 −10 C2 C1 C5 C6 −20 S22 VCC = 6.2 Vdc ICC = 180 mA −30 MMG30XX Rev 2 −40 1600 1800 2000 2200 2400 2600 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 11. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors 0805K470JBT AVX C3 68 pF Chip Capacitor 0805K680JBT AVX C4 0.01 μF Chip Capacitor 0603A103JAT2A AVX C5 (1) 1.2 pF Chip Capacitor for 1800 - 2400 MHz 06035J1R2BBT AVX (1) C6 0.1 pF Chip Capacitor for 1800 - 2400 MHz 06035J0R1BBT AVX L1 22 nH Chip Inductor HK160822NJ - T Taiyo Uden R1 7.5 W Chip Resistor RK73B2AT7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 6-8 Freescale Semiconductor RF Product Device Data 50 OHM APPLICATION CIRCUIT: 2500 - 2700 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 DUT C1 Z1, Z6 Z2 Z3 Z3 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip Z4 Z5 C5 RF OUTPUT Z6 C2 Z4 Z5 PCB 0.085″ x 0.058″ Microstrip 0.404″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 23. 50 Ohm Test Circuit Schematic 30 S21 S21, S11, S22 (dB) 20 R1 10 C4 C3 0 L1 S22 −10 C2 C1 C5 −20 S11 VCC = 6.2 Vdc ICC = 180 mA −30 −40 2200 2300 2400 2500 2600 2700 MMG30XX Rev 2 2800 f, FREQUENCY (MHz) Figure 24. S21, S11 and S22 versus Frequency Figure 25. 50 Ohm Test Circuit Component Layout Table 12. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 2.2 pF Chip Capacitors 0603A5J2R2BBT AVX C3 68 pF Chip Capacitor 0805K680JBT AVX C4 0.01 μF Chip Capacitor 0603A103JAT2A AVX C5 (1) 1.2 pF Chip Capacitor for 2500 - 2700 MHz 06035J1R2BBT AVX L1 39 nH Chip Inductor HK160839NJ - T Taiyo Uden R1 7.5 W Chip Resistor RK73B2AT7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 Freescale Semiconductor RF Product Device Data 6-9 50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z6 Z2 Z3 Z3 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip Z4 RF OUTPUT Z6 Z5 C5 C2 Z4 Z5 PCB 0.085″ x 0.058″ Microstrip 0.404″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 26. 50 OhmTest Circuit Schematic 20 15 S21 R1 S21, S11, S22 (dB) 10 C4 C3 5 L1 0 C2 C1 −5 C5 S22 −10 S11 VCC = 6.2 Vdc ICC = 180 mA −15 −20 3200 3300 3400 3500 3600 3700 MMG30XX Rev 2 3800 f, FREQUENCY (MHz) Figure 27. S21, S11 and S22 versus Frequency Figure 28. 50 Ohm Test Circuit Component Layout Table 13. 50 OhmTest Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 2.2 pF Chip Capacitors 0603A5J2R2BBT AVX C3 68 pF Chip Capacitor 0805K680JBT AVX C4 0.01 μF Chip Capacitor 0603A103JAT2A AVX C5 (1) 0.5 pF Chip Capacitor for 3400 - 3600 MHz 06035J0R5BBT AVX L1 39 nH Chip Inductor HK160839NJ - T Taiyo Uden R1 7.5 W Chip Resistor RK73B2AT7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. MMG3003NT1 6 - 10 Freescale Semiconductor RF Product Device Data 50 OHM TYPICAL CHARACTERISTICS Table 14. Class A Common Emitter S - Parameters at VCC = 6.2 Vdc, ICC = 180 mA, TC = 255C S11 S21 S12 S22 f GHz 0.1 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.141 178.297 12.985 173.850 0 0.057 0.785 0 0.087 - 167.704 0.15 0.153 175.556 12.654 168.9 0.057 - 0.913 0.136 - 137.479 0.2 0.155 160.177 13.067 164.046 0.059 - 2.423 0.125 - 131.397 0.25 0.152 159.068 12.851 160.334 0.058 - 2.897 0.159 - 130.233 0.3 0.147 156.309 12.685 156.518 0.058 - 3.227 0.187 - 128.649 0.35 0.139 153.853 12.519 152.664 0.058 - 3.971 0.212 - 128.651 0.4 0.135 150.838 12.327 149.087 0.057 - 4.471 0.239 - 129.263 0.45 0.129 148.378 12.124 145.521 0.057 - 4.799 0.263 - 130.237 0.5 0.123 145.160 11.915 142.009 0.057 - 5.285 0.285 - 131.637 0.55 0.117 142.332 11.694 138.634 0.057 - 5.623 0.306 - 133.294 0.6 0.112 139.364 11.470 135.366 0.057 - 6.012 0.326 - 135.284 0.65 0.106 136.769 11.238 132.093 0.057 - 6.295 0.345 - 137.146 0.7 0.101 133.592 11.004 128.948 0.057 - 6.705 0.362 - 139.07 0.75 0.096 131.187 10.770 125.882 0.057 - 7.044 0.378 - 141.171 0.8 0.090 128.979 10.532 122.88 0.056 - 7.277 0.394 - 143.273 0.85 0.086 126.711 10.298 119.942 0.056 - 7.495 0.408 - 145.372 0.9 0.081 124.541 10.066 117.117 0.056 - 7.847 0.422 - 147.618 0.95 0.076 122.189 9.841 114.276 0.056 - 8.05 0.435 - 149.849 1 0.073 121.191 9.611 111.625 0.056 - 8.311 0.447 - 151.947 1.05 0.069 119.451 9.393 108.992 0.056 - 8.582 0.458 - 154.142 1.1 0.065 118.827 9.170 106.412 0.056 - 8.89 0.470 - 156.289 1.15 0.062 118.851 8.957 103.879 0.056 - 9.079 0.480 - 158.481 1.2 0.059 118.882 8.742 101.417 0.056 - 9.405 0.490 - 160.544 1.25 0.056 119.703 8.541 99.039 0.056 - 9.615 0.498 - 162.608 1.3 0.054 120.919 8.340 96.664 0.056 - 9.805 0.507 - 164.561 1.35 0.051 123.223 8.143 94.364 0.056 - 10.198 0.515 - 166.501 1.4 0.048 125.019 7.957 92.107 0.056 - 10.536 0.522 - 168.351 1.45 0.046 128.063 7.774 89.892 0.056 - 10.724 0.530 - 170.229 1.5 0.033 135.869 7.640 87.599 0.057 - 11.197 0.529 - 172.918 1.55 0.030 139.127 7.475 85.482 0.057 - 11.434 0.536 - 174.487 1.6 0.027 142.585 7.322 83.442 0.057 - 11.649 0.541 - 175.93 1.65 0.024 146.640 7.170 81.444 0.057 - 11.993 0.546 - 177.394 1.7 0.023 152.580 7.040 79.397 0.058 - 12.335 0.552 - 179.018 1.75 0.021 158.266 6.890 77.439 0.058 - 12.616 0.555 179.899 1.8 0.021 166.196 6.756 75.477 0.058 - 12.879 0.560 178.582 1.85 0.022 171.633 6.621 73.576 0.058 - 13.16 0.563 177.318 1.9 0.023 177.431 6.495 71.695 0.058 - 13.445 0.566 176.139 1.95 0.025 - 176.142 6.371 69.952 0.059 - 13.806 0.570 175.08 2 0.027 - 173.137 6.251 67.988 0.059 - 14.176 0.573 173.812 2.05 0.029 - 170.367 6.135 66.175 0.059 - 14.413 0.577 172.704 2.1 0.031 - 168.467 6.025 64.385 0.060 - 14.882 0.580 171.566 2.15 0.033 - 168.388 5.921 62.595 0.060 - 15.338 0.583 170.426 2.2 0.036 - 169.515 5.815 60.823 0.060 - 15.659 0.586 169.283 2.25 0.039 - 170.197 5.716 59.079 0.061 - 16.136 0.589 168.164 2.3 0.042 - 171.944 5.618 57.331 0.061 - 16.513 0.591 167.003 2.35 0.045 - 173.747 5.525 55.573 0.061 - 16.98 0.593 165.803 MMG3003NT1 Freescale Semiconductor RF Product Device Data 6 - 11 Table 14. Class A Common Emitter S - Parameters at VCC = 6.2 Vdc, ICC = 180 mA, TC = 255C (continued) S11 S21 S12 S22 f GHz 2.4 |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.048 - 175.268 5.431 53.848 0.062 - 17.435 0.595 164.669 2.45 0.052 - 177.409 5.345 52.136 0.062 - 17.955 0.597 163.447 2.5 0.056 - 178.703 5.258 50.405 0.062 - 18.404 0.598 162.182 2.55 0.060 179.650 5.173 48.736 0.063 - 19.004 0.600 160.854 2.6 0.063 177.705 5.096 47.012 0.063 - 19.505 0.602 159.516 2.65 0.067 175.894 5.015 45.266 0.063 - 20.1 0.603 158.1 2.7 0.071 174.932 4.938 43.452 0.064 - 20.75 0.605 156.649 2.75 0.074 172.453 4.861 41.831 0.064 - 21.297 0.607 155.174 2.8 0.079 170.595 4.788 40.113 0.065 - 21.999 0.609 153.675 2.85 0.083 168.962 4.715 38.402 0.065 - 22.577 0.610 152.104 2.9 0.087 167.373 4.643 36.711 0.065 - 23.239 0.612 150.539 2.95 0.091 165.543 4.573 35.036 0.066 - 23.942 0.614 148.941 3 0.095 164.513 4.506 33.356 0.066 - 24.652 0.616 147.251 3.05 0.099 163.309 4.438 31.684 0.066 - 25.269 0.618 145.747 3.1 0.103 162.077 4.373 29.98 0.067 - 26.085 0.620 144.105 3.15 0.107 161.249 4.308 28.307 0.067 - 26.717 0.622 142.483 3.2 0.110 160.222 4.244 26.653 0.067 - 27.483 0.624 140.894 3.25 0.114 159.057 4.182 25.007 0.068 - 28.223 0.626 139.31 3.3 0.117 158.018 4.121 23.381 0.068 - 29.013 0.629 137.737 3.35 0.119 156.94 4.061 21.791 0.068 - 29.779 0.631 136.267 3.4 0.122 155.757 4.004 20.196 0.069 - 30.535 0.633 134.76 3.45 0.126 154.754 3.949 18.618 0.069 - 31.29 0.635 6 3.5 0.12826 153.898 3.895 17.049 0.06938 - 31.957 0.6367 131.951 3.55 0.13168 152.875 3.84045 15.491 0.06971 - 32.814 0.6392 130.655 3.6 0.13497 152.157 3.78882 13.97 0.07016 - 33.474 0.64031 129.412 MMG3003NT1 6 - 12 Freescale Semiconductor RF Product Device Data 1.7 7.62 0.305 diameter 2.49 3.48 5.33 1.27 1.27 2.54 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 29. Recommended Mounting Configuration MMG3003NT1 Freescale Semiconductor RF Product Device Data 6 - 13 NOTES MMG3003NT1 6 - 14 Freescale Semiconductor RF Product Device Data PACKAGE DIMENSIONS 3 4 4.70 4.40 A 1.87 1.79 0.15 M C A B 0.60 0.40 B 2X R0.15 TYP 1.70 1.40 3 4 2.70 2.40 2X 4° TYP 4.50 3.70 1.30 0.70 5 1 2 2X 3 0.20 M C B 0.48 0.38 0.48 0.38 0.15 M C A B 0.58 0.48 0.46 0.40 0.15 M C A B 2X 4 ° TYP NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.5MM PER END. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.5MM PER SIDE. 4. DIMENSIONS ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. E.P. 2X R0.20 4X 0.10 C SEATING PLANE 0.65 0.55 1.35 1.25 C 1.50 1.50 1.65 1.55 STYLE 1: PIN 1. RF INPUT 2. GROUND 3. RF OUTPUT CASE 1514 - 01 ISSUE C SOT - 89 PLASTIC BOTTOM VIEW MMG3003NT1 Freescale Semiconductor RF Product Device Data 6 - 15 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MMG3003NT1 Document Number: MMG3003NT1 6Rev. - 164, 5/2006 Freescale Semiconductor RF Product Device Data