SavantIC Semiconductor Product Specification BUL56B Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 18 A ICM Collector current-Peak 25 A IB Base current 5 A 85 W Ptot Total power dissipation Tstg Operating and storage temperature TC=25 -55~150 SavantIC Semiconductor Product Specification BUL56B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdwon voltage IE=1mA ;IC=0 10 V VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.1A 0.2 V VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.7A 0.6 V VCEsat-3 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.2 V VBEsat-1 Base-emitter saturation voltage IC=7A; IB=0.7A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 1.8 V ICBO Collector cut-off current VCB=250V; IE=0 TC=125 10 100 µA ICEO Collector cut-off current VCE=90V ;IB=0 100 µA IEBO Emitter cut-off current VEB=9V; IC=0 TC=125 10 100 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 30 90 hFE-2 DC current gain IC=5A ; VCE=5V 25 60 hFE-3 DC current gain IC=12A ; VCE=1V 5 fT Transition frequency IC=0.2A ; VCE=4V 20 MHz Cob Output capacitance VCB=100V ;f=1MHz 100 pF 2 MIN TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUL56B