PHILIPS BLU86 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLU86
UHF power transistor
Product specification
September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES
• SMD encapsulation
• Emitter-ballasting resistors for
optimum temperature profile
• Gold metallization ensures
excellent reliability.
BLU86
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (see
note 1).
MODE OF OPERATION
c.w. narrow band
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηc
(%)
900
12.5
1
>7
> 55
Note
DESCRIPTION
1. Ts = temperature at soldering point of collector tab.
NPN silicon planar epitaxial transistor
encapsulated in a SOT223 surface
mounted envelope and designed
primarily for use in mobile radio
equipment in the 900 MHz
communications band.
PIN CONFIGURATION
4
halfpage
PINNING - SOT223
PIN
c
handbook, halfpage
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
b
MBB012
1
2
Top view
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
September 1991
2
e
Philips Semiconductors
Product specification
UHF power transistor
BLU86
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
32
V
VCEO
collector-emitter voltage
open base
−
16
V
VEBO
emitter-base voltage
open collector
−
3
V
IC, IC(AV)
collector current
DC or average value
−
200
mA
ICM
collector current
peak value;
f > 1 MHz
−
600
mA
Ptot
total power dissipation
f > 1 MHz;
Ts = 129 °C
(note 1)
−
2
W
Tstg
storage temperature range
−65
150
°C
Tj
operating junction temperature
−
175
°C
Note
1. Ts = temperature at soldering point of collector tab.
MRA241
3
handbook,10
halfpage
IC
(mA)
Ts = 129 oC
102
10
1
10
VCE (V)
102
Fig.2 DC SOAR.
THERMAL RESISTANCE
SYMBOL
Rth j-s(DC)
PARAMETER
from junction to soldering point
September 1991
CONDITIONS
Ptot = 2 W;
Ts = 129 °C
3
MAX.
23
UNIT
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLU86
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
IC = 2.5 mA
32
−
−
V
V(BR)CEO
collector-emitter breadown voltage
open base;
IC = 10 mA
16
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 0.5 mA
3
−
−
V
ICES
collector-emitter leakage current
VBE = 0;
VCE = 16 V
−
−
1
mA
hFE
DC current gain
VCE = 10 V;
IC = 150 mA
25
−
−
ESBR
second breakdown energy
L = 25 mH;
RBE = 10 Ω;
f = 50 Hz
0.3
−
−
mJ
CC
collector capacitance
VCB = 12.5 V;
IE = Ie = 0;
f = 1 MHz
−
2.2
2.6
pF
Cre
feedback capacitance
VCE = 12.5 V;
IC = 0;
f = 1 MHz
−
1.2
1.8
pF
MRA237
MRA234
100
handbook,
halfpage
hFE
5
handbook, halfpage
Cc
(pF)
VCE = 12.5 V
80
4
10 V
60
3
40
2
20
1
0
0
Fig.3
200
400
IC (mA)
0
600
DC current gain as a function of collector
current; typical values.
September 1991
Fig.4
4
0
5
10
VCB (V)
15
Collector capacitance as a function of
collector-base voltage, typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLU86
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C; in a common emitter class-B test circuit (see note 1).
f
(MHz)
MODE OF OPERATION
c.w. narrow band
VCE
(V)
900
PL
(W)
12.5
Gp
(dB)
>7
typ. 7.7
1
ηc
(%)
> 55
typ. 66
Note
1. Ts = temperature at soldering point of collector tab.
MRA235
MRA240
2
handbook, halfpage
100
handbook, 10
halfpage
GP
(dB)
ηc
(%)
GP
8
PL
(W)
80
1.5
6
60
ηc
1
4
40
2
20
0.5
0
0
0.4
0.8
0
1.6
1.2
0
0
100
200
300
PL (W)
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Fig.5
Fig.6
Gain and efficiency as functions of load
power, typical values.
400
500
PIN (mW)
Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLU86 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V,
f = 900 MHz and Ts ≤ 60 °C, where Ts is the temperature
at the soldering point of the collector tab.
September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
50 Ω
input
BLU86
,,,,
C1
L2
L1
C2
C3
L5
,,,,
C6
L4
L3
TUT
C5
C4
L7
50 Ω
output
L8
R1
L6
+VCC
C7
R2
C8
C9
MBC090
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
C1, C6
multilayer ceramic chip capacitor
(note 1)
100 pF
C2, C3, C4, C5
film dielectric trimmer
1.4 to 5.5 pF
C7
multilayer ceramic chip capacitor
(note 1)
220 pF
C8
multilayer ceramic chip capacitor
(note 1)
1 nF
C9
63 V electrolytic capacitor
2.2 µF
L1
stripline (note 2)
50 Ω
17 mm × 4.7 mm
L2
stripline (note 2)
50 Ω
5 mm × 4.7 mm
L3
stripline (note 2)
50 Ω
32 mm × 4.7 mm
L4
stripline (note 2)
50 Ω
20 mm × 4.7 mm
L5, L7
6 turns enamelled 0.8 mm copper wire
L6, L8
grade 3B1 Ferroxcube wideband HF choke
R1, R2
0.25 W metal film resistor
CATALOGUE NO.
2222 809 09001
int. dia. 3 mm
4312 020 36640
10 Ω, 5%
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr = 2.2);
thickness 1⁄16 inch.
September 1991
6
Philips Semiconductors
Product specification
UHF power transistor
BLU86
140 mm
handbook, full pagewidth
strap
strap
80 mm
rivets
(14x)
strap
mounting
screws
(8x)
strap
VCC
L8
C9
L6
C8
C7
R2
R1
L5
C1
L7
L1
C2
L2
L3
C3
C6
L4
C4
C5
MBC089
The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is
unetched and serves as a ground plane. Earth connections from the component side to the ground plane are
made by means of fixing screws, hollow rivets and copper foil straps, as shown.
Fig.8 Component layout for 900 MHz class-B test circuit.
September 1991
7
Philips Semiconductors
Product specification
UHF power transistor
BLU86
MRA239
MRA238
14
handbook, 50
halfpage
handbook,
Z halfpage
ZL
(Ω)
i
(Ω)
12
40
RL
ri
10
30
XL
8
xi
6
20
4
10
2
0
800
840
880
920
0
800
960
1000
f (MHz)
880
920
960
1000
f (MHz)
Class-B operation; VCE = 12.5 V; PL = 1 W.
Class-B operation; VCE = 12.5 V; PL = 1 W.
Fig.9
840
Fig.10 Load impedance (series components) as a
function of frequency, typical values.
Input impedance (series components) as a
function of frequency, typical values.
MRA236
12
GP
(dB)
10
handbook, halfpage
8
6
handbook, halfpage
4
Zi
ZL
2
MBA451
0
800
840
880
920
960
1000
f MHz
Class-B operation; VCE = 12.5 V; PL = 1 W.
Fig.12 Power gain as a function of frequency,
typical values.
Fig.11 Definition of transistor impedance.
September 1991
8
Philips Semiconductors
Product specification
UHF power transistor
BLU86
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
September 1991
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLU86
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1991
10
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