DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. BLU86 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band f (MHz) VCE (V) PL (W) Gp (dB) ηc (%) 900 12.5 1 >7 > 55 Note DESCRIPTION 1. Ts = temperature at soldering point of collector tab. NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications band. PIN CONFIGURATION 4 halfpage PINNING - SOT223 PIN c handbook, halfpage DESCRIPTION 1 emitter 2 base 3 emitter 4 collector b MBB012 1 2 Top view 3 MSB002 - 1 Fig.1 Simplified outline and symbol. September 1991 2 e Philips Semiconductors Product specification UHF power transistor BLU86 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC, IC(AV) collector current DC or average value − 200 mA ICM collector current peak value; f > 1 MHz − 600 mA Ptot total power dissipation f > 1 MHz; Ts = 129 °C (note 1) − 2 W Tstg storage temperature range −65 150 °C Tj operating junction temperature − 175 °C Note 1. Ts = temperature at soldering point of collector tab. MRA241 3 handbook,10 halfpage IC (mA) Ts = 129 oC 102 10 1 10 VCE (V) 102 Fig.2 DC SOAR. THERMAL RESISTANCE SYMBOL Rth j-s(DC) PARAMETER from junction to soldering point September 1991 CONDITIONS Ptot = 2 W; Ts = 129 °C 3 MAX. 23 UNIT K/W Philips Semiconductors Product specification UHF power transistor BLU86 CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 2.5 mA 32 − − V V(BR)CEO collector-emitter breadown voltage open base; IC = 10 mA 16 − − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 3 − − V ICES collector-emitter leakage current VBE = 0; VCE = 16 V − − 1 mA hFE DC current gain VCE = 10 V; IC = 150 mA 25 − − ESBR second breakdown energy L = 25 mH; RBE = 10 Ω; f = 50 Hz 0.3 − − mJ CC collector capacitance VCB = 12.5 V; IE = Ie = 0; f = 1 MHz − 2.2 2.6 pF Cre feedback capacitance VCE = 12.5 V; IC = 0; f = 1 MHz − 1.2 1.8 pF MRA237 MRA234 100 handbook, halfpage hFE 5 handbook, halfpage Cc (pF) VCE = 12.5 V 80 4 10 V 60 3 40 2 20 1 0 0 Fig.3 200 400 IC (mA) 0 600 DC current gain as a function of collector current; typical values. September 1991 Fig.4 4 0 5 10 VCB (V) 15 Collector capacitance as a function of collector-base voltage, typical values. Philips Semiconductors Product specification UHF power transistor BLU86 APPLICATION INFORMATION RF performance at Ts ≤ 60 °C; in a common emitter class-B test circuit (see note 1). f (MHz) MODE OF OPERATION c.w. narrow band VCE (V) 900 PL (W) 12.5 Gp (dB) >7 typ. 7.7 1 ηc (%) > 55 typ. 66 Note 1. Ts = temperature at soldering point of collector tab. MRA235 MRA240 2 handbook, halfpage 100 handbook, 10 halfpage GP (dB) ηc (%) GP 8 PL (W) 80 1.5 6 60 ηc 1 4 40 2 20 0.5 0 0 0.4 0.8 0 1.6 1.2 0 0 100 200 300 PL (W) Class-B operation; VCE = 12.5 V; f = 900 MHz. Class-B operation; VCE = 12.5 V; f = 900 MHz. Fig.5 Fig.6 Gain and efficiency as functions of load power, typical values. 400 500 PIN (mW) Load power as a function of drive power, typical values. Ruggedness in class-B operation The BLU86 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, f = 900 MHz and Ts ≤ 60 °C, where Ts is the temperature at the soldering point of the collector tab. September 1991 5 Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth 50 Ω input BLU86 ,,,, C1 L2 L1 C2 C3 L5 ,,,, C6 L4 L3 TUT C5 C4 L7 50 Ω output L8 R1 L6 +VCC C7 R2 C8 C9 MBC090 Fig.7 Class-B test circuit at f = 900 MHz. List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C6 multilayer ceramic chip capacitor (note 1) 100 pF C2, C3, C4, C5 film dielectric trimmer 1.4 to 5.5 pF C7 multilayer ceramic chip capacitor (note 1) 220 pF C8 multilayer ceramic chip capacitor (note 1) 1 nF C9 63 V electrolytic capacitor 2.2 µF L1 stripline (note 2) 50 Ω 17 mm × 4.7 mm L2 stripline (note 2) 50 Ω 5 mm × 4.7 mm L3 stripline (note 2) 50 Ω 32 mm × 4.7 mm L4 stripline (note 2) 50 Ω 20 mm × 4.7 mm L5, L7 6 turns enamelled 0.8 mm copper wire L6, L8 grade 3B1 Ferroxcube wideband HF choke R1, R2 0.25 W metal film resistor CATALOGUE NO. 2222 809 09001 int. dia. 3 mm 4312 020 36640 10 Ω, 5% Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr = 2.2); thickness 1⁄16 inch. September 1991 6 Philips Semiconductors Product specification UHF power transistor BLU86 140 mm handbook, full pagewidth strap strap 80 mm rivets (14x) strap mounting screws (8x) strap VCC L8 C9 L6 C8 C7 R2 R1 L5 C1 L7 L1 C2 L2 L3 C3 C6 L4 C4 C5 MBC089 The circuit and components are situated on one side of a copper-clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. Fig.8 Component layout for 900 MHz class-B test circuit. September 1991 7 Philips Semiconductors Product specification UHF power transistor BLU86 MRA239 MRA238 14 handbook, 50 halfpage handbook, Z halfpage ZL (Ω) i (Ω) 12 40 RL ri 10 30 XL 8 xi 6 20 4 10 2 0 800 840 880 920 0 800 960 1000 f (MHz) 880 920 960 1000 f (MHz) Class-B operation; VCE = 12.5 V; PL = 1 W. Class-B operation; VCE = 12.5 V; PL = 1 W. Fig.9 840 Fig.10 Load impedance (series components) as a function of frequency, typical values. Input impedance (series components) as a function of frequency, typical values. MRA236 12 GP (dB) 10 handbook, halfpage 8 6 handbook, halfpage 4 Zi ZL 2 MBA451 0 800 840 880 920 960 1000 f MHz Class-B operation; VCE = 12.5 V; PL = 1 W. Fig.12 Power gain as a function of frequency, typical values. Fig.11 Definition of transistor impedance. September 1991 8 Philips Semiconductors Product specification UHF power transistor BLU86 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 September 1991 EUROPEAN PROJECTION 9 Philips Semiconductors Product specification UHF power transistor BLU86 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 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