AVAGO AT-42035G Up to 6 ghz medium power silicon bipolar transistor Datasheet

AT-42035
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Data Sheet
Description
Avago Technologies' AT-42035 is a general purpose NPN bipolar transistor that offers excellent high ­frequency performance.
The AT‑42035 is housed in a cost effective surface mount 100
mil micro-X package. The 4 micron emitter-to-emitter pitch
enables this transistor to be used in many different functions.
The 20 emitter finger interdigitated geometry yields a medium
sized transistor with impedances that are easy to match for low
noise and medium power applications. This device is designed
for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies.
An optimum noise match near 50 Ω up to 1 GHz, makes this
device easy to use as a low noise amplifier.
The AT-42035 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Cost Effective Ceramic Microstrip Package
35 micro-X Package
AT-42035 Absolute Maximum Ratings [1]
Units
Absolute
Maximum
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
Symbol
Parameter
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
600
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature[4]
°C
-65 to 150
Thermal Resistance [2,5]:
θjc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. Tcase = 25°C.
3. Derate at 5.7 mW/°C for Tc > 95°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to
solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate
determination of θjc than do alternate methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Min.
Typ.
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
10.0
f = 4.0 GHz
11.0
5.0
P1 dB
f = 2.0 GHz
dBm
f= 4.0 GHz
21.0
20.5
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
dB
f = 4.0 GHz
14.0
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
f = 4.0 GHz
2.0
3.0
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
dB
f = 4.0 GHz
13.5
10.0
|S 21E| 2
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
GHz
—
30
Max.
8.0
150
270
ICBO
Collector Cutoff Current; VCB = 8 V
µA
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
µA
2.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
Notes:
1. For this test, the emitter is grounded.
Units
0.28
AT-42035 Typical Performance, TA = 25°C
24
12
2.0 GHz
20
4.0 GHz
P1dB
16
2.0 GHz
12
0
10
20
30
40
4
50
G1dB
8
4.0 GHz
0
10
20
IC (mA)
4V
P1dB
12
24
35
21
30
18
GAIN (dB)
MSG
20
MAG
|S21E|2
10
5
0
15
12
4
9
3
NFO
3
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
0
0.5
1.0
2.0
10 V
6V
4V
G1dB
12
0
10
20
30
40
50
IC (mA)
GA
6
14
10
50
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector Current
and Frequency. VCE = 8 V.
40
15
40
IC (mA)
Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
25
30
2
1
0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10�mA.
NFO (dB)
0
GAIN (dB)
6V
16
16
G1 dB (dB)
4.0 GHz
4
10 V
20
2.0 GHz
8
G1 dB (dB)
|S21E|2 GAIN (dB)
16
24
P1 dB (dBm)
1.0 GHz
P1 dB (dBm)
20
Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector Current
and Voltage. f = 2.0 GHz.
AT-42035 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.72
.59
.56
.56
.58
.59
.61
.63
.63
.63
.64
.67
.72
-46
-137
-171
169
155
147
137
128
117
106
93
79
70
28.3
20.9
15.4
12.1
9.7
8.0
6.5
5.2
4.0
3.1
2.3
1.5
0.6
26.09
11.13
5.91
4.03
3.06
2.50
2.10
1.82
1.60
1.43
1.30
1.19
1.07
152
102
80
67
55
48
38
27
17
7
-3
-13
-23
dB
S12
Mag.
Ang.
-37.0
-31.0
-28.2
-26.6
-24.2
-22.6
-20.8
-19.6
-18.0
-16.5
-15.4
-14.3
-13.4
.014
.028
.039
.047
.062
.074
.092
.105
.126
.149
.169
.193
.215
73
44
47
52
55
61
65
62
57
53
48
41
35
dB
S12
Mag.
Ang.
-42.0
-32.8
-28.2
-25.6
-23.2
-21.6
-20.0
-18.4
-17.0
-16.0
-14.9
-14.1
-13.2
.008
.023
.039
.053
.069
.084
.101
.120
.141
.158
.179
.198
.219
68
57
63
66
65
67
64
61
57
50
45
37
30
S22
Mag.
Ang.
.92
.58
.51
.50
.48
.47
.46
.47
.49
.51
.52
.51
.46
-14
-27
-29
-33
-38
-42
-51
-63
-72
-80
-87
-94
-105
AT-42035 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
Freq. S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.50
.52
.53
.53
.55
.57
.59
.60
.60
.60
.61
.64
.69
-88
-164
174
160
148
142
134
125
116
104
92
79
70
33.2
22.4
16.6
13.1
10.8
9.0
7.5
6.3
5.2
4.2
3.4
2.6
1.7
45.64
13.24
6.75
4.55
3.45
2.81
2.37
2.06
1.81
1.62
1.47
1.35
1.21
135
92
76
64
53
47
37
27
17
7
-2
-13
-23
A model for this device is available in the DEVICE MODELS section.
AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
0.1
0.5
1.0
2.0
4.0
1.0
1.1
1.3
2.0
3.0
.04
.04
.07
.20
.51
10
66
150
-178
-110
0.13
0.12
0.12
0.12
0.36
S22
Mag.
Ang.
.77
.45
.42
.41
.41
.39
.38
.39
.41
.43
.44
.43
.38
-22
-25
-26
-30
-36
-40
-49
-61
-71
-78
-84
-91
-102
Ordering Information
Part Numbers
No. of Devices
AT-42035G
100
35 micro-X Package Dimensions
.085
2.15
4
EMITTER
.083 DIA.
2.11
420
BASE
016
1
COLLECTOR
3
.020
.508
2
.057 � .010
1.45 � .25
.022
.56
EMITTER
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = � 0.005
mm .xx = � 0.13
.455 � .030
11.54 � .75
.006 � .002
.15 � .05
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2652EN
AV02-0299EN - April 29, 2008
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