FS02...N SURFACE MOUNT SCR SOT223 (Plastic) On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 200 V ÷ 800 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld PARAMETER On-state Current* Average On-state Current* Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS Min. Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, Θ = 180 º, Ttab = 95 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25 ºC tp = 10ms, Half Cycle IGR = 10 µA, Tj = 25 ºC 20 µs max. 20 µs max. 20 ms max. Max. Unit 1.2 3 0.2 +125 +150 260 A A A A A2s V A W W ºC ºC ºC 1.25 0.8 25 22.5 2.5 8 -40 -40 10s max. * with 5 cm2 copper (e= 35µm) surface under tab. SYMBOL VDRM VRRM PARAMETER Repetitive Peak Off State Voltage CONDITIONS RGK = 1 KΩ VOLTAGE B 200 D 400 M 600 Unit N 800 V Jun - 02 FS02...N SURFACE MOUNT SCR Electrical Characteristics SYMBOL IGT PARAMETER CONDITIONS Gate Trigger Current Unit SENSITIVITY MIN VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX VD = VDRM , RL = 3.3KΩ, RGK = 1KΩ, MIN Tj = 125 ºC IDRM / IRRM Off-State Leakage Current VTM VT(O) rd VGT VGD On-state Voltage On-state Threshold Voltage Dinamic Resistance Gate Trigger Voltage Gate Non Trigger Voltage IH IL dv / dt Holding Current Latching Current IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC Critical Rate of Voltage Rise VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC di / dt Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, Tj = 125 ºC Rth(j-l) Rth(j-a) MAX MAX MIN 01 1 20 04 15 50 02 200 500 5 1.45 0.9 150 0.8 0.1 03 20 200 µA V V mΩ V V 5 6 15 15 MIN 10 µA 20 mA mA V/µs 50 A/µs Thermal Resistance Junction-Leads for DC 25 ºC/W Thermal Resistance Junction-Ambient 60 ºC/W PART NUMBER INFORMATION F S 02 01 B N 00 RB FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Jun - 02 FS02...N SURFACE MOUNT SCR Fig. 1: Maximum average power dissipation versus average on-state current Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T tab). P (W) T tab (ºC) -85 P (W) 1.4 1.4 360 º 1.2 Rth (j-l) 1.2 α DC -95 1.0 1.0 Rth (j-a) α = 180 º 0.8 0.8 -105 α = 120 º 0.6 0.6 α = 90 º 0.4 0.4 -115 α = 60 º 0.2 0.2 α = 30 º IT(AV)(A) 0.0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 Fig. 3: Average on-state current versus tab temperature 20 40 60 80 -125 Tamb (ºC) 100 120 140 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. I T(AV) (A) Zth(j-a) / Rth(j-a) 1.6 1.00 DC 1.4 1.2 1.0 0.8 0.10 α = 180 º Standard foot print, e (Cu) = 35 µm 0.6 0.4 0.2 T lead (ºC) 0.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Ih (Tj) Igt (Tj = 25 ºC) Ih (Tj = 25 ºC) 0.01 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 10.0 25 Tj initial = 25 ºC 9.0 8.0 20 7.0 6.0 15 Igt 5.0 10 4.0 3.0 2.0 5 Ih 1.0 Tj (ºC) 0.0 -40 -20 0 20 40 60 80 100 120 140 Number of cycles 0 1 10 100 1000 Jun - 02 FS02...N SURFACE MOUNT SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A). I2t (A2s) ITM(A) 100 100 Tj initial = 25 ºC Tj initial 25 ºC ITSM 10 Tj max 10 1 I2 t tp(ms) 1 1 10 Tj max Vto = 1.05 V Rt = 0.150 Ω VTM(V) 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 PACKAGE MECHANICAL DATA SOT223 (Plastic) A B 16º max. (4x) C REF. 10º max. H E I J K D F G A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25 DIMENSIONS Milimeters Typ. 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30 Max. 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35 Weight: 0.11 g FOOT PRINT 3.3 1.5 (3x) 1 2.3 6.4 1.5 4.6 Jun - 02