HSMC HBC848 Npn epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 1/3
HBC848
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC848 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
VBE(on)1
VBE(on)2
*hFE
fT
Cob
Min.
30
30
5
580
110
-
Typ.
90
200
700
900
300
3.5
Max.
15
250
600
700
770
800
6
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
hFE
HBC848
A
110-220
B
200-450
C
420-800
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
100000
Saturation Voltage (mV)
Current Gain-hFE
10000
hFE @ V CE=5V
100
10
VBE(sat) @ IC=20IB
1000
VCE(sat) @ IC=20IB
100
10
1
0.1
1
10
100
0.1
1000
1
10
Collector Current-IC (mA)
On Voltage & Collector Current
1000
Capacitance & Reverse-Biased Voltage
10000
10
Capacitance (pF)
On Voltage (mV)
100
Collector Current-IC (mA)
1000
VBE(on) @ VCE=5V
100
0.1
1
10
Collector
100
Cob
1
0.1
0.1
1000
Current-IC (mA)
1
10
100
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
Safe Operating Area
1000
10000
Collector Current-IC (mA)
Cutoff Frequence (MHz)
PT=1ms
V CE=5V
100
10
PT=100ms
PT=1s
100
10
1
1
10
Collector Current-IC (mA)
HBC848
1000
100
1
10
100
Forward Voltage-VCE (V)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 3/3
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
8 C
3
B S
1
V
Rank Code
Control Code
2
G
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
C
D
H
K
J
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min.
Max.
0.1102
0.1204
0.0472
0.0630
0.0335
0.0512
0.0118
0.0197
0.0669
0.0910
0.0005
0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034
0.0070
0.0128
0.0266
0.0335
0.0453
0.0830
0.1083
0.0098
0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBC848
HSMC Product Specification
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