SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW (PNP) 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 75 Emitter-base voltage VEBO 6 Collector current IC 600 mA Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value Unit V TS ≤ 77 °C -65 ... 150 Value ≤ 220 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 75 - - V(BR)EBO 6 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 60 V, IE = 0 - - 0.01 VCB = 60 V, IE = 0 , TA = 150 °C - - 10 - - 10 Emitter-base cutoff current I EBO nA VEB = 3 V, IC = 0 DC current gain1) - h FE IC = 100 µA, VCE = 10 V 35 - - IC = 1 mA, VCE = 10 V 50 - - IC = 10 mA, VCE = 10 V 75 - - IC = 150 mA, V CE = 1 V 50 - - IC = 150 mA, V CE = 10 V 100 - 300 IC = 500 mA, V CE = 10 V 40 - - Collector-emitter saturation voltage1) V VCEsat IC = 150 mA, IB = 15 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 1 IC = 150 mA, IB = 15 mA 0.6 - 1.2 IC = 500 mA, IB = 50 mA - - 2 Base emitter saturation voltage 1) 1Pulse VBEsat test: t < 300µs; D < 2% 2 2007-04-19 SMBT2222A/MMBT2222A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 300 - - MHz pF AC Characteristics Transition frequency fT IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb - 2.5 5 Ceb - - 35 VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 1 mA, VCE = 10 V, f = 1 kHz 2 - 8 IC = 10 mA, VCE = 10 V, f = 1 kHz 0.25 - 1.25 Open-circuit reverse voltage transf. ratio 10-4 h12e IC = 1 mA, VCE = 10 V, f = 1 kHz - - 8 IC = 10 mA, VCE = 10 V, f = 1 kHz - - 4 Short-circuit forward current transf. ratio h21e - IC = 1 mA, VCE = 10 V, f = 1 kHz 50 - 300 IC = 10 mA, VCE = 10 V, f = 1 kHz 75 - 375 Open-circuit output admittance µS h22e IC = 1 mA, VCE = 10 V, f = 1 kHz 5 - 35 IC = 10 mA, VCE = 10 V, f = 1 kHz Delay time 25 - 200 td - - 10 tr - - 25 Storage time tstg - - 225 VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA Fall time tf - - 60 VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA Noise figure F - - 4 ns VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, I B1 = 15 mA, VBE(off) = 0.5 V dB IC = 100 µA, VCE = 10 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ 3 2007-04-19 SMBT2222A/MMBT2222A Test circuit Delay and rise time 30 V 200 Ω Osc. 619 Ω 9.9 V 0 0.5 V EHN00055 Storage and fall time 30 V ~100 µ s 200 Ω < 5 ns 16.2 V Osc. 1 kΩ 0 -13.8 V ~ 500 µ s -3.0 V EHN00056 Oscillograph: R > 100Ω, C < 12pF, t r < 5ns 4 2007-04-19 SMBT2222A/MMBT2222A DC current gain hFE = ƒ(IC) Saturation voltage IC = ƒ(VBEsat; V CEsat) VCE = 10 V h FE = 10 10 3 SMBT 2222/A EHP00743 SMBT 2222/A 10 3 EHP00742 mA h FE ΙC 5 VCE 10 2 150 ˚C VBE 5 25 ˚C 10 2 10 1 5 -50 ˚C 5 10 0 5 10 1 -1 10 10 0 10 1 2 10 ΙC mA 10 0.2 0.4 0.6 1.0 V 1.2 0.8 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00741 35 MHz pF CCB(CEB ) fT SMBT 2222/A 0 VBE sat , VCE sat Transition frequency fT = ƒ(IC) VCE = 20 V 10 3 10 -1 3 2 25 20 10 2 CEB 15 5 10 2 5 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 5 10 15 V 25 VCB(VEB) ΙC 5 2007-04-19 SMBT2222A/MMBT2222A Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 360 mW SMBT 2222/A EHP00740 Ptot max 5 Ptot DC 300 tp tp D= T T P tot 270 240 10 2 210 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 180 150 120 10 1 90 5 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -6 °C 150 TS 10 -5 10 -4 10 -3 Storage time t stg = ƒ(IC) Rise time tr = ƒ(IC) Fall time t f = ƒ(IC) td,tr SMBT 2222/A s 10 0 tp Delay time t d = ƒ(IC ) 10 3 ns 10 -2 EHP00744 10 3 SMBT 2222/A EHP00745 ns 5 t s, t f 5 VCC = 30 V h FE = 10 tr ts tr V = 5 V BE 10 2 5 h FE = 10 10 2 td VBE = 2 V 5 h FE = 20 tf td h FE = 10 VBE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 ΙC 10 1 1 10 10 3 5 10 2 mA 5 10 3 ΙC 6 2007-04-19 Package SOT23 SMBT2222A/MMBT2222A 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 7 2007-04-19 SMBT2222A/MMBT2222A Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-19