LRC L9013QLT1G General purpose transistor Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L9013PLT1G
FEATURE
We declare that the material of product compliance with RoHS requirements.
Series
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
S-L9013PLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9013PLT1G
S-L9013PLT1G
L9013PLT3G
S-L9013PLT3G
L9013QLT1G
S-L9013QLT1G
L9013QLT3G
S-L9013QLT3G
L9013RLT1G
S-L9013RLT1G
L9013RLT3G
S-L9013RLT3G
L9013SLT1G
S-L9013SLT1G
L9013SLT3G
S-L9013SLT3G
Marking
13P
Shipping
3000/Tape&Reel
13P
10000/Tape&Reel
13Q
3000/Tape&Reel
13Q
10000/Tape&Reel
13R
3000/Tape&Reel
3
1
2
SOT-23 (TO-236AB)
13R
10000/Tape&Reel
13S
3000/Tape&Reel
13S
10000/Tape&Reel
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
20
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5
V
IC
500
mAdc
Symbol
Max
Unit
225
mW
1.8
mW/oC
556
o
Collector current-continuoun
2
EMITTER
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
PD
o
TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
R
θ JA
C/ W
PD
Total Device Dissipation
o
Alumina Substrate, (2) TA=25 C
o
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
Tj ,Tstg
300
mW
2.4
mW/oC
417
-55 to +150
C/ W
o
o
C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µA)
Collector-Base Breakdown Voltage
(IC=100µA)
Collector Cutoff Current (VCB=35V)
Emitter Cutoff Current (VEB=4V)
V(BR)CEO
20
-
-
V
V(BR)EBO
5
-
-
V
V(BR)CBO
40
-
-
V
150
nA
150
nA
ICBO
IEBO
-
-
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
L9013PLT1G Series
S-L9013PLT1G Series
ON CHARACTERISTICS
DC Current Gain
(IC=50mA, VCE=1V)
Collector-Emitter Saturation Voltage
(IC=500mA,IB=50mA)
NOTE:
Hfe
100
-
600
-
-
0.6
VCE(S)
*
P
Q
HFE
100~200
150~300
R
200~400
V
S
300~600
SOT-23 (TO-236AB)
NOTES:
A
1. CONTROLLING DIMENSION: MILLIMETERS
L
2. LEAD THICKNESS SPECIFIED PER L / F DRAWING WITH
SOLDER PLATING.
3
B S
1
V
DIM
A
B
C
D
G
H
J
K
L
S
V
2
G
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
C
D
H
K
PIN 1. BASE
2. EMITTER
3. COLLECTOR
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 2/2
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