Order this document by MCR8DCM/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics A SCRs 8.0 AMPERES RMS 600 thru 800 VOLTS • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 A G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR8DCN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MCR8DCNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MCR8DCN–1 K K A G CASE 369A–13 STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off–State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 125°C) Value VDRM VRRM MCR8DCM MCR8DCN On–State RMS Current (All Conduction Angles; TC = 105°C) IT(RMS) Peak Non–Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) ITSM Average Gate Power (t = 8.3 msec, TC = 105°C) Amps 8.0 IT(AV) Peak Gate Power (Pulse Width ≤ 10 sec, TC = 105°C) Volts 600 800 Average On–State Current (All Conduction Angles; TC = 105°C) Circuit Fusing Consideration (t = 8.3 msec) Unit 5.1 80 I2t 26 PGM A2sec Watts 5.0 PG(AV) 0.5 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 105°C) Operating Junction Temperature Range Storage Temperature Range IGM 2.0 Amps TJ –40 to 125 °C Tstg –40 to 150 Symbol Max Unit RJC RJA RJA 2.2 88 80 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. Maximum Lead Temperature for Soldering Purposes (3) (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristics Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Min Typ Max IDRM IRRM TJ = 25°C TJ = 125°C Peak On–State Voltage (1) (ITM = 16 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) (VD = 12 V, RL = 100 W, TJ = 125°C) VGT Holding Current (VD = 12 V, IT = 200 mA, TJ = 25°C) (VD = 12 V, IT = 200 mA, TJ = –40°C) IH Latching Current (VD = 12 V, IG = 15 mA, TJ = 25°C) (VD = 12 V, IG = 30 mA, TJ = –40°C) IL Unit mA — — — — 0.01 5.0 — 1.4 1.8 2.0 — 7.0 — 15 30 0.5 — 0.2 0.65 — — 1.0 2.0 — 4.0 — 22 — 30 60 4.0 — 22 — 30 60 Min Typ Max 50 200 — Volts mA Volts mA mA DYNAMIC CHARACTERISTICS Characteristics Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Symbol dv/dt Unit V/ms (1) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 2 Motorola Thyristor Device Data 120 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 a a = Conduction 115 Angle 110 dc 105 a = 30° 60° 90° 120° 180° 100 0 1.0 2.0 4.0 3.0 5.0 180° 8.0 120° a 90° a = Conduction 6.0 dc Angle 4.0 60° a = 30° 2.0 0 0 1.0 3.0 2.0 4.0 6.0 5.0 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On–State Power Dissipation 100 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C 10 MAXIMUM @ TJ = 25°C 1.0 0.1 0.1 ZqJC(t) = RqJC(t)Sr(t) 0.01 0 2.0 1.0 4.0 3.0 0.1 5.0 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On–State Characteristics Figure 4. Transient Thermal Response 0.9 VGT, GATE TRIGGER VOLTAGE (VOLTS) 100 I GT, GATE TRIGGER CURRENT (mA) 10 6.0 r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 10 1.0 –40 –25 –10 0.8 0.7 0.6 0.5 0.4 0.3 0.2 5.0 20 35 50 65 80 95 110 125 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 3 100 IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 100 10 1.0 –40 –25 –10 5.0 20 35 50 65 80 95 110 125 10 1.0 –40 –25 –10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 125 1000 STATIC dv/dt (V/ ms) VD = 800 V TJ = 125°C 100 10 100 1000 10 K RGK, GATE–CATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate–Cathode Resistance 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– C B V E R 4 Z A S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE 3 U K F J L H D 2 PL G 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– T STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE CASE 369A–13 ISSUE Y Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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