APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-247 SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol 20A 0.430Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8043BLL_SLL UNIT 800 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.23 W/°C PD TJ,TSTG 1 80 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 20 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 5A) TYP MAX Volts 0.43 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2004 Characteristic / Test Conditions 050-7056 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT8043BLL_SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 485 Reverse Transfer Capacitance f = 1 MHz 80 VGS = 10V 85 VDD = 400V 13 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 20A @ 25°C tf 5 VDD = 400V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 INDUCTIVE SWITCHING @ 25°C 6 280 VDD = 533V, VGS = 15V 6 ns 25 ID = 20A @ 25°C Fall Time nC 9 VGS = 15V Turn-off Delay Time pF 55 RESISTIVE SWITCHING Rise Time td(off) UNIT 2500 VGS = 0V 3 MAX ID = 20A, RG = 5Ω 125 INDUCTIVE SWITCHING @ 125°C 460 VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω µJ 160 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 20 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -20A, dl S/dt = 100A/µs) 680 ns Q Reverse Recovery Charge (IS = -20A, dl S/dt = 100A/µs) 10.6 µC rr dv/ dt Peak Diode Recovery dv/ 80 (Body Diode) 1.3 (VGS = 0V, IS = -20A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7056 Rev C 7-2004 0.35 0.30 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 t1 t2 SINGLE PULSE 0.1 10-4 10-3 °C/W 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves RC MODEL 0.0258 Power (watts) 0.107 0.177 0.00295F 0.0114F 0.174F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT8043BLL_SLL 50 VGS =15 &10 V 40 7.5V 30 7V 20 6.5V 10 6V Case temperature. (°C) 5.5V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 50 40 30 TJ = +125°C TJ = -55°C 10 0 TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 18 16 14 12 10 8 6 4 2 0 25 I V D GS 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 = 5A = 10V 1.5 1.0 0.5 0.0 -50 D -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 5A GS 1.30 1.15 20 2.0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 7-2004 20 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 050-7056 Rev C ID, DRAIN CURRENT (AMPERES) 70 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80 8V 80 5,000 OPERATION HERE LIMITED BY RDS (ON) 10 100µS 10mS = 20A 12 VDS=160V VDS=400V 8 VDS=640V 4 0 500 Coss 100 Crss 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 16 D 1,000 10 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I Ciss 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 50 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) APT8043BLL_SLL 10,000 60 200 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 45 50 V 40 td(off) G J G = 5Ω T = 125°C J 30 L = 100µH 20 td(on) 5 1000 10 V DD G SWITCHING ENERGY (µJ) 7-2004 20 15 0 15 tr 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200 = 533V 5 10 V = 5Ω I 1000 T = 125°C 800 050-7056 Rev C 25 5 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT R J L = 100µH EON includes diode reverse recovery. 600 Eon 400 Eoff 200 0 tf 10 10 0 L = 100µH 30 = 533V tr and tf (ns) DD SWITCHING ENERGY (µJ) td(on) and td(off) (ns) V R = 5Ω T = 125°C 35 40 = 533V DD R DD D 15 = 533V = 20A Eoff T = 125°C J L = 100µH E ON includes 800 diode reverse recovery. 600 Eon 400 200 0 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT8043BLL_SLL 90% 10% Gate Voltage Gate Voltage TJ125°C TJ125°C td(off) td(on) tr 90% 90% 10% 0 5% 5% Drain Voltage tf Drain Current Drain Current Drain Voltage 10% Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT15DF100 ID V DD V DS G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7056 Rev C 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123) 7-2004 3.50 (.138) 3.81 (.150)