EC7408N60 600V, 8A N-Channel Power MOSFET Features ◆ 600V, 8A, RDS(ON)(MAX) =1.2Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 ％ Avalanche Tested Applications ◆ Adapter ◆ LCD Panel Power ◆ Switching Mode Power Supply ◆ E-Bike Charger Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) ot Symbol Parameter VDS VGS Drain-Source Voltage a Gate-Source Voltage Drain Current-Continuous, TC =25 Drain Current-Continuous, TC =100 Drain Current-Pulsed b Maximum Power Dissipation @ TJ =25 Single Pulsed Avalanche Energy e Operating and Store Temperature Range ID IDM PD EAS TJ, TSTG Limit TO-220 TO-220F TO-263 600 30 8 4.8 32 125 40 31 4.8 Unit V V A A A W mJ V/ns Thermal Characteristics Symbol Rθ JC Parameter Thermal Resistance, Junction-Case Max. E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 1 Value Unit 3.1 /W 5B03N-Rev.F002 EC7408N60 600V, 8A N-Channel Power MOSFET Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics Symbol Parameter Test Condition Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250 µA 600 - - V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 20 µA VDS = 0V, VGS = 30V - - 100 nA VDS = 0V, VGS = -30V - - -100 nA IGSSF IGSSR Forward Gate Body Leakage Current Reverse Gate Body Leakage Current ■ On Characteristics Symbol Parameter VGS(th) Gate Threshold Voltage RDS(on) gFS d Static Drain-Source On-Resistance Forward Transconductance d Test Condition Min. Typ. Max. Unit VGS = VDS, ID = 250µA 2.0 3.0 4.0 V VGS = 10V, ID = 4A - 0.96 1.2 Ω VDS = 15V, ID = 4A - 3.8 10 S Test Condition Min. Typ. Max. Unit - - pF - 1280 146 - pF - 22 - pF Min. Typ. Max. Unit - - ns - ns ■ Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V,VGS = 0V f = 1.0 MHz ■ Switching Characteristics Symbol Parameter td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Test Condition Turn-On Rise Time VDD = 300V,ID = 8A, - 26.6 7.1 Turn-Off Delay Time VGS = 10V, RG=10Ω - 51.7 - ns - 10.9 - ns Turn-Off Fall Time - 23.8 - nC Gate-Source Charge VDD=300V,ID=8A - 6.6 - nC Gate-Drain Charge VGS = 10V - 7.9 - nC Max. Unit Total Gate Charge ■ Drain-Source Diode Characteristics Symbol Parameter Drain-Source Diode Forward Continuous Current Test Condition Min. VGS = 0V - - 8 A ISM Maximum Pulsed Current VGS =0V - - A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =8A - 0.82 32 1.5 IS E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 5 Typ. V 5B03N-Rev.F002 600V, 8A N-Channel Power MOSFET EC7408N60 Notes : a. TJ = +25 ℃ to +150 ℃. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD< 9.0A di/dt < 100 A/µs, VDD < BVDSS, T J < +150 ℃.. d. Pulse width≦ 300 µs; duty cycle≦ 2%. e. L=1.2mH, VDD =50V, ID=6.9A, RG =25 Starting TJ =25℃. VDS, Drain-Source Voltage (V) VDS, Drain-Source Voltage (V) for EC7408N60AT/ EC7408N60A9R for EC7408N60AFT Figure 1-1 Maximum Safe Operating Area Figure 3. Gate Charge Characteristics Figure 2. Capacitance Characteristics E-CMOS Corp. (www.ecmos.com.tw) Figure 1-2 Maximum Safe Operating Area Page 3 of 5 5B03N-Rev.F002 600V, 8A N-Channel Power MOSFET Figure 4. Normalized On-Resistance Variation with Temperature Figure 6. On-State Characteristics EC7408N60 Figure 5. Gate Threshold Variation with Temperature Figure 7. Body Diode Forward Voltage Variation with Source Current Figure 8. Transfer Characteristics E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 5 5B03N-Rev.F002 EC7408N60 600V, 8A N-Channel Power MOSFET Square Pulse Duration (sec) for EC7408N60AFT Figure 9-1 Normalized Effective Transient Thermal Impedance With Pulse Duration Figure 8. Transfer Characteristics Square Pulse Duration (sec) for Aec7408N60at/EC7408N60A9R Figure 9-2 Normalized Effective Transient Thermal Impedance With Pulse Duration ORDERING INFORMATION Part Number Package EC7408N60A9T TO263-3L EC7408N60AT TO-220-3L EC7408N60AFT TO-220F-3L E-CMOS Corp. (www.ecmos.com.tw) Marking 7408N60 LLLLLL YYWW Page 5 of 5 Marking Information 1. LLLLLL：Lot No. 2. YY：Year code 3. WW：Week code 5B03N-Rev.F002