E-CMOS EC7408N60AFT 600v, 8a n-channel power mosfet Datasheet

EC7408N60
600V, 8A N-Channel Power MOSFET
Features
◆ 600V, 8A, RDS(ON)(MAX) =1.2Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
◆ Adapter
◆ LCD Panel Power
◆ Switching Mode Power Supply
◆ E-Bike Charger
Absolute Maximum Ratings (Tc = 25°C unless otherwise
noted)
ot
Symbol
Parameter
VDS
VGS
Drain-Source Voltage a
Gate-Source Voltage
Drain Current-Continuous, TC =25
Drain Current-Continuous, TC =100
Drain Current-Pulsed b
Maximum Power Dissipation @ TJ =25
Single Pulsed Avalanche Energy e
Operating and Store Temperature Range
ID
IDM
PD
EAS
TJ, TSTG
Limit
TO-220
TO-220F
TO-263
600
30
8
4.8
32
125
40
31
4.8
Unit
V
V
A
A
A
W
mJ
V/ns
Thermal Characteristics
Symbol
Rθ JC
Parameter
Thermal Resistance, Junction-Case
Max.
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
1
Value
Unit
3.1
/W
5B03N-Rev.F002
EC7408N60
600V, 8A N-Channel Power MOSFET
Electrical Characteristics( TJ = 25°C unless otherwise noted)
■ Off Characteristics
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250 µA
600
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
20
µA
VDS = 0V, VGS = 30V
-
-
100
nA
VDS = 0V, VGS = -30V
-
-
-100
nA
IGSSF
IGSSR
Forward Gate Body
Leakage Current
Reverse Gate Body
Leakage Current
■ On Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
RDS(on)
gFS
d
Static Drain-Source On-Resistance
Forward Transconductance
d
Test Condition
Min.
Typ.
Max.
Unit
VGS = VDS, ID = 250µA
2.0
3.0
4.0
V
VGS = 10V, ID = 4A
-
0.96
1.2
Ω
VDS = 15V, ID = 4A
-
3.8
10
S
Test Condition
Min.
Typ.
Max.
Unit
-
-
pF
-
1280
146
-
pF
-
22
-
pF
Min.
Typ.
Max.
Unit
-
-
ns
-
ns
■ Dynamic Characteristics
Symbol
Parameter
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V,VGS = 0V
f = 1.0 MHz
■ Switching Characteristics
Symbol
Parameter
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Test Condition
Turn-On Rise Time
VDD = 300V,ID = 8A,
-
26.6
7.1
Turn-Off Delay Time
VGS = 10V, RG=10Ω
-
51.7
-
ns
-
10.9
-
ns
Turn-Off Fall Time
-
23.8
-
nC
Gate-Source Charge
VDD=300V,ID=8A
-
6.6
-
nC
Gate-Drain Charge
VGS = 10V
-
7.9
-
nC
Max.
Unit
Total Gate Charge
■ Drain-Source Diode Characteristics
Symbol
Parameter
Drain-Source Diode Forward
Continuous Current
Test Condition
Min.
VGS = 0V
-
-
8
A
ISM
Maximum Pulsed Current
VGS =0V
-
-
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS =8A
-
0.82
32
1.5
IS
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 5
Typ.
V
5B03N-Rev.F002
600V, 8A N-Channel Power MOSFET
EC7408N60
Notes :
a. TJ = +25 ℃ to +150 ℃.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD< 9.0A di/dt < 100 A/µs, VDD < BVDSS, T J < +150 ℃..
d. Pulse width≦ 300 µs; duty cycle≦ 2%.
e. L=1.2mH, VDD =50V, ID=6.9A, RG =25
Starting TJ =25℃.
VDS, Drain-Source Voltage (V)
VDS, Drain-Source Voltage (V)
for EC7408N60AT/ EC7408N60A9R
for EC7408N60AFT
Figure 1-1 Maximum Safe Operating Area
Figure 3. Gate Charge Characteristics
Figure 2. Capacitance Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Figure 1-2 Maximum Safe Operating
Area
Page 3 of 5
5B03N-Rev.F002
600V, 8A N-Channel Power MOSFET
Figure 4. Normalized On-Resistance
Variation with Temperature
Figure 6. On-State Characteristics
EC7408N60
Figure 5. Gate Threshold Variation with
Temperature
Figure 7. Body Diode Forward Voltage
Variation with Source Current
Figure 8. Transfer Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 5
5B03N-Rev.F002
EC7408N60
600V, 8A N-Channel Power MOSFET
Square Pulse Duration (sec) for EC7408N60AFT
Figure 9-1 Normalized Effective Transient Thermal Impedance With Pulse Duration
Figure 8. Transfer Characteristics
Square Pulse Duration (sec) for Aec7408N60at/EC7408N60A9R
Figure 9-2 Normalized Effective Transient Thermal Impedance With Pulse Duration
ORDERING INFORMATION
Part Number
Package
EC7408N60A9T
TO263-3L
EC7408N60AT
TO-220-3L
EC7408N60AFT
TO-220F-3L
E-CMOS Corp. (www.ecmos.com.tw)
Marking
7408N60
LLLLLL
YYWW
Page 5 of 5
Marking Information
1. LLLLLL:Lot No.
2. YY:Year code
3. WW:Week code
5B03N-Rev.F002
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