FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET –12V, –6A, 18mΩ Features General Description This P-Channel –1.8V specified MOSFET uses Fairchild Max rDS(on) = 18mΩ at VGS = –4.5V, ID = –6A Semiconductor’s advanced low voltage PowerTrench®. It has Max rDS(on) = 22mΩ at VGS = –2.5V, ID = –5A been optimized for battery power management applications. Max rDS(on) = 30mΩ at VGS = –1.8V, ID = –4A Low gate charge Application High performance trench technology for extremely low rDS(on) Low profile TSSOP-8 package Power management RoHS compliant Load switch Battery protection TSSOP8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed ±8 V –6 A 2 Power Dissipation-Single Operation TJ, TSTG Units V –30 Power Dissipation-Dual Operation PD Ratings –12 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 1.6 W 1 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 125 °C/W Package Marking and Ordering Information Device Marking 2508PB Device FDW2508PB ©2006 Fairchild Semiconductor Corporation FDW2508PB Rev.B Package TSSOP-8 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET October 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient –12 ID = –250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V VDS = –10V VGS = 0V mV/°C –12 –1 TJ = 125°C –100 VGS = ±8V, VDS = 0V µA ±100 nA –1.5 V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250µA, referenced to 25°C 3 VGS = –4.5V, ID = –6A 15 18 VGS = –2.5V, ID = –5A 18 22 VGS = –1.8V, ID = –4A 22 30 VGS = –4.5V, ID = –6A,TJ = 125°C 23 30 VDS = –5V, ID = –6A 35 rDS(on) Static Drain to Source On-Resistance gFS Forward Transconductance –0.4 –0.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –6V, VGS = 0V, f = 1MHz 2835 3775 pF 440 590 pF 370 555 pF Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –6V, ID = –6A VGS = –4.5V, RGEN = 6Ω VGS = –4.5V ,VDD = –6V ID = –6A 8 16 ns 16 29 ns 254 407 ns 106 170 ns 32 45 nC 4.3 nC 7.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = –1.1A (Note 2) IF = –6A, di/dt = 100A/µs –0.6 –1.2 V 106 159 ns 110 165 nC Notes: 1: RθJA is the sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as solder mounting surface of the drian pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.RθJA is 125°C/W(steady state) when mounted on a minimum pad. a. RθJA is 80°C/W(steady state) when mounted on a 1 in2 pad of 2 oz copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDW2508PB Rev.B 2 www.fairchildsemi.com FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 30 VGS = -4.5V 24 VGS = -2.5V VGS = -1.8V 18 VGS = -1.5V 12 6 0 0.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.0 1.5 1.0 0.5 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 150 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 10 TJ = 150oC TJ = 25oC 5 TJ = -55oC 0 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) 2.0 Figure 5. Transfer Characteristics FDW2508PB Rev.B 5 10 15 20 -ID, DRAIN CURRENT(A) 25 30 ID = -6A 35 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 150oC 25 20 TJ = 25oC 15 10 1.5 3.0 4.5 6.0 -VGS, GATE TO SOURCE VOLTAGE (V) 7.5 Figure 4. On-Resistance vs Gate to Source Voltage 30 15 0 40 1.0 25 VGS = -2.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = -6A VGS = -4.5V -25 VGS = -1.8V 2.0 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 0.6 -50 VGS = -4.5V 2.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 VGS = -1.5V 3.5 Figure 1. On Region Characteristics 1.6 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 4.0 40 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC TJ = -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4.0 Ciss 3.5 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 4 10 4.5 3.0 VDD = -4V 2.5 VDD = -6V 2.0 VDD = -8V 1.5 1.0 Crss f = 1MHz VGS = 0V 0.5 0.0 2 0 5 10 15 20 25 Qg, GATE CHARGE(nC) 30 10 0.1 35 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms 1 100ms 1s 0.1 DC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.01 1E-3 0.1 SINGLE PULSE TJ = MAX RATED TA = 25OC 1 30 10 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 200 TA = 25oC 100 FOR TEMPERATURES VGS = -8V Figure 9. Forward Bias Safe Operating Area NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A -----------------------125 I = I25 10 SINGLE PULSE 1 -3 10 -2 -1 10 0 1 2 10 10 10 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) 2 1 20 Figure 8. Capacitance vs Drain to Source Voltage 100 -ID, DRAIN CURRENT (A) Coss 3 10 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 SINGLE PULSE 1E-3 -3 10 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDW2508PB Rev.B 4 www.fairchildsemi.com FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDW2508PB Dual P-Channel –1.8V Specified PowerTrench® MOSFET www.fairchildsemi.com 5 FDW2508PB Rev.B FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22