Infineon BTN7933B High current pn half bridge novalithic Datasheet

Data Sheet, Rev. 1.0, Sept. 2009
BTN7933B
High Current PN Half Bridge
NovalithIC™
Automotive Power
High Current PN Half Bridge
BTN7933B
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
2.2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
4.1
4.2
4.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.2
5.2.1
5.2.2
5.2.3
5.3
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.3.6
5.4
5.4.1
5.4.2
5.4.3
5.4.4
5.4.5
5.4.6
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Overvoltage mode (Smart Clamping) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6
6.1
6.2
6.3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Data Sheet
2
6
6
8
8
22
22
22
23
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
NovalithIC™
1
BTN7933B
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Path resistance of max. 55 mΩ @ 150 °C (typ. 28 mΩ @ 25 °C)
High Side: max. 17 mΩ @ 150 °C (typ. 10 mΩ @ 25 °C)
Low Side: max. 38 mΩ @ 150 °C (typ. 18 mΩ @ 25 °C)
Enhanced switching speed for reduced switching losses
(rise/fall times down to typ. 500ns)
Extended operating voltage range down to 4.5 V (high side switch)
Low quiescent current of typ. 7 μA @ 25 °C
PWM capability of up to 25 kHz combined with active freewheeling
Switched mode current limitation for reduced power dissipation
in overcurrent
Current limitation level of 20 A min. / 32 A typ. (low side)
Status flag diagnosis with current sense capability
Overtemperature shut down with latch behaviour
Smart clamping in overvoltage
Undervoltage shut down
Driver circuit with logic level inputs
Adjustable slew rates for optimized EMI
Operation up to 28V
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-7-1
Description
The BTN7933B is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with current sense, slew rate adjustment, dead time generation, smart clamping in overvoltage, and
protection against overtemperature, undervoltage, overcurrent and short circuit.
The BTN7933B provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Type
Package
Marking
BTN7933B
PG-TO263-7-1
BTN7933B
Data Sheet
3
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Diagram
2
Block Diagram
The BTN7933B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high
current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by
chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance.
Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing
to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with
current sense, slew rate adjustment, dead time generation, smart clamping in overvoltage and protection against
overtemperature, undervoltage, overcurrent and short circuit. The BTN7933B can be combined with other
BTN7933B to form H-bridge and 3-phase drive configurations.
2.1
Block Diagram
VS
Undervolt.
detection
Overvolt.
detection
Current
Sense
Overcurr.
Detection
HS
Overtemp.
detection
Gate Driver
HS
IS
Digital Logic
LS off
IN
OUT
HS off
Gate Driver
LS
INH
Overcurr.
Detection
LS
Slewrate
Adjustment
SR
GND
Figure 1
Block Diagram
2.2
Terms
Following figure shows the terms used in this data sheet.
VS
I VS , -I D( HS)
I IN
IN
V IN
VS
IINH
I OUT , I L
INH
V INH
VDS (HS )
O UT
ISR
VSD (LS )
V OUT
SR
VSR
I IS
IS
V IS
G ND
IGND , I D( LS)
Figure 2
Data Sheet
Terms
4
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
8
1234 5 67
Figure 3
Pin Assignment BTN7933B (top view)
3.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
1
GND
-
Ground
2
IN
I
Input
Defines whether high- or lowside switch is activated
3
INH
I
Inhibit
When set to low device goes in sleep mode
4,8
OUT
O
Power output of the bridge
5
SR
I
Slew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6
IS
O
Current Sense and Diagnostics
7
VS
-
Supply
Bold type: pin needs power wiring
Data Sheet
5
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
-0.3
28
V
–
–
40
V
2)
Voltages
4.1.1
Supply Voltage
4.1.2
Supply Voltage for Load Dump
Protection
(VS(LD)= VA + VS with VA = 13.5V)
VS
VS(LD)
Ri = 2 Ω
RL = 1.0 Ω
td = 400ms
suppressed pulse
4.1.3
Logic Input Voltage
4.1.4
Voltage at SR Pin
4.1.5
Voltage between VS and IS Pin
4.1.6
Voltage at IS Pin
VIN
VINH
VSR
VS -VIS
VIS
-0.3
5.3
V
–
-0.3
1.0
V
–
-0.3
45
V
–
-20
28
V
–
ID(HS)
ID(LS)
-20
20
A
TC < 85°C
switch active
-18
18
A
TC < 125°C
switch active
-50
50
A
TC < 85°C
tpulse = 10ms
Currents
4.1.7
4.1.8
HS/LS Continuous Drain Current3)
HS/LS Pulsed Drain Current3)
ID(HS)
ID(LS)
single pulse
-46
46
A
TC < 125°C
tpulse = 10ms
single pulse
4.1.9
HS/LS PWM Current
3)
ID(HS)
ID(LS)
-26
26
A
TC < 85°C
f = 1kHz, DC = 50%
-23
23
A
TC < 125°C
f = 1kHz, DC = 50%
-28
28
A
TC < 85°C
f = 20kHz, DC = 50%
-25
25
A
TC < 125°C
f = 20kHz, DC = 50%
-40
150
°C
–
-55
150
°C
–
Temperatures
4.1.10
Junction Temperature
4.1.11
Storage Temperature
Data Sheet
Tj
Tstg
6
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
General Product Characteristics
Absolute Maximum Ratings (cont’d)1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Unit
Conditions
kV
HBM4)
Max.
ESD Susceptibility
4.1.12
VESD
ESD Resistivity HBM
IN, INH, SR, IS
OUT, GND, VS
-2
-4
2
4
1) Not subject to production test, specified by design
2) VS(LD) is setup without the DUT connected to the generator per ISO7637-1; Ri is the internal resistance of the load dump
test pulse generator; td is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2.
3) Maximum reachable current may be smaller depending on current limitation level
4) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
60
50
|I max | [A]
40
30
20
10
0
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
t pulse[s]
Figure 4
BTN7933B Maximum Single Pulse Current (TC < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
Data Sheet
7
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
General Product Characteristics
4.2
Pos.
Functional Range
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Conditions
4.2.1
Supply Voltage Range for
Normal Operation
VS(nor)
8
18
V
–
4.2.2
Extended Supply Voltage Range
for Operation
VS(ext)
VUV(OFF)max 28
V
Parameter
Deviations possible
4.2.3
Junction Temperature
Tj
-40
°C
–
150
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
4.3
Pos.
Thermal Resistance
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
4.3.1
Thermal Resistance
Junction-Case, Low Side Switch1)
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
RthJC(LS) –
3.6
4.8
K/W
–
4.3.2
Thermal Resistance
Junction-Case, High Side Switch1)
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) –
1.1
1.6
K/W
–
4.3.3
Thermal Resistance
Junction-Case, both Switches1)
Rthjc = max[ΔTj(HS), ΔTj(LS)] /
(Pv(HS) + Pv(LS))
RthJC
–
1.8
2.4
K/W
–
4.3.4
Thermal Resistance
Junction-Ambient1)
RthJA
–
21
–
K/W
2)
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
Data Sheet
8
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5
Block Description and Characteristics
5.1
Supply Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
–
2
3
Unit
Conditions
mA
VINH = 5 V
VIN = 0 V or 5 V
RSR = 0 Ω
General
5.1.1
IVS(on)
Supply Current
DC-mode
normal operation
(no fault condition)
5.1.2
IVS(off)
Quiescent Current
–
7
12
µA
–
–
65
µA
VINH = 0 V
VIN = 0 V or 5 V
Tj < 85 °C
VINH = 0 V
VIN = 0 V or 5 V
I V S (o f f ) [µA]
25
20
15
10
5
0
-40
0
40
80
120
160
T [°C]
Figure 5
Data Sheet
Typical Quiescent Current vs. Junction Temperature
9
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.2
Power Stages
The power stages of the BTN7933B consist of a p-channel vertical DMOS transistor for the high side switch and
a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in
a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing
power dissipation in the forward operation of the integrated diodes.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 6.
Low Side Switch
High Side Switch
70
RON(LS ) [mΩ]
RON(HS) [mΩ]
40
35
30
60
50
25
40
20
15
10
Tj = 150°C
30
Tj = 25°C
20
Tj = 150°C
Tj = 25°C
Tj = -40°C
Tj = -40°C
5
10
4
Figure 6
Data Sheet
8
12
16
20
24
28
VS [V]
4
8
12
16
20
24
28
VS [V]
Typical ON State Resistance vs. Supply Voltage
10
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
mΩ
IOUT = 8 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
VINH = 0 V; VOUT = 0 V
Tj < 85 °C; 1)
VINH = 0 V; VOUT = 0 V
Tj = 150 °C
IOUT = -8 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
Max.
High Side Switch - Static Characteristics
5.2.1
5.2.2
5.2.3
ON State High Side Resistance
Leakage Current High Side
RON(HS)
IL(LKHS)
Reverse Diode Forward-Voltage VDS(HS)
High Side2)
–
–
10
14
–
17
–
–
1
µA
–
–
50
µA
–
–
–
0.9
0.8
0.6
–
–
0.8
–
–
18
28
–
38
–
–
1
µA
–
–
10
µA
V
Low Side Switch - Static Characteristics
5.2.4
5.2.5
5.2.6
ON State Low Side Resistance
Leakage Current Low Side
RON(LS)
IL(LKLS)
Reverse Diode Forward-Voltage VSD(LS)
Low Side2)
mΩ
V
–
–
–
0.9
0.8
0.7
–
–
0.9
1) Not subject to production test, specified by design
2) Due to active freewheeling, diode is conducting only for a few µs, depending on
Data Sheet
11
IOUT = -8 A; VS = 13.5 V
Tj = 25 °C; 1)
Tj = 150 °C
VINH = 0 V; VOUT = VS
Tj < 85 °C; 1)
VINH = 0 V; VOUT = VS
Tj = 150 °C
IOUT = 8 A
Tj = -40 °C; 1)
Tj = 25 °C; 1)
Tj = 150 °C
RSR
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.2.2
Switching Times
IN
t dr(HS )
t r(HS )
t df (HS )
tf (HS )
t
VOUT
90%
90%
ΔVOUT
ΔVOUT
10%
10%
t
Figure 7
Definition of switching times high side (Rload to GND)
IN
tdf (LS )
t f (LS )
tdr(LS )
tr(LS )
t
VOUT
90%
90%
ΔV OUT
ΔVOUT
10%
10%
t
Figure 8
Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
•
ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
Data Sheet
12
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.2.3
Power Stages - Dynamic Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 4 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
High Side Switch Dynamic Characteristics
5.2.7
5.2.8
5.2.9
5.2.10
5.2.11
Rise-Time of HS
Slew Rate HS on1)
Switch on Delay Time HS
Fall-Time of HS
Slew Rate HS off1)
tr(HS)
ΔVOUT/
tr( HS)
µs
0.15
–
0.8
0.55
1
2.5
0.95
–
6
11.4
–
1.8
19.6
10.8
4.3
72
–
13.5
1.2
–
2
2
2.8
7.8
2.8
–
17
0.15
–
0.8
0.55
1
2.8
0.95
–
7
19.6
10.8
3.9
72
–
13.5
V/µs
tdr(HS)
Switch off Delay Time HS
tf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
-ΔVOUT/
tf(HS)
11.4
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
V/µs
tdf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
1
1.6
2.4
–
2.3
–
1.5
6
14
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(HS) or |-ΔVOUT|/ tf(HS)
Data Sheet
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
–
1.5
5.2.12
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
13
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 4 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
Low Side Switch Dynamic Characteristics
5.2.13
5.2.14
Rise-Time of LS
Slew Rate LS off1)
tr(LS)
5.2.16
5.2.17
Switch off Delay Time LS
Fall-Time of LS
Slew Rate LS on1)
0.15
–
0.8
0.5
1
2.5
0.85
–
6
12.7
–
1.8
21.6
10.8
4.3
72
–
13.5
0.3
–
0.8
0.8
1.2
3.6
1.3
–
7
0.15
–
0.8
0.5
1
2.5
0.85
–
7
21.6
10.8
4.3
72
–
13.5
ΔVOUT/
tr(LS)
5.2.15
µs
V/µs
tdr(LS)
Switch on Delay Time LS
tf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
-ΔVOUT/
tf(LS)
12.7
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
V/µs
tdf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
1.8
2.7
3.6
–
3.8
–
3
11
20
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(LS) or |-ΔVOUT|/ tf(LS)
Data Sheet
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
–
1.5
5.2.18
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
14
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.3
Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 5.3.4). In case of overtemperature the BTN7933B will apply the slew rate determined by the
connected slew rate resistor. In all other fault conditions the highest slew rate possible will be applied independent
of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current
IIS(LIM) at the IS pin as described in the paragraph “Status Flag Diagnosis With Current Sense Capability” on
Page 19 and Figure 12.
In the following the protection functions are listed in order of their priority.
5.3.1
Overvoltage mode (Smart Clamping)
If the supply voltage is exceeding the over voltage level VOVM(ON) the device enters the overvoltage mode. The IC
operates in normal mode again with a hysteresis VOVM(HY) if the supply voltage decreases below the Overvoltage
Mode OFF voltage level VOVM(off). In case of overvoltage the device shuts the lowside MOSFET off and a fault
current IIS(LIM) is provided at the IS pin. The highside MOSFET is still operational and follows the inputs IN and INH.
Current Limitation and Overtemperature Protection are still active for the highside switch, and can independently
switch off the highside MOSFET, if it was on before.
If the highside MOSFET is off, an implemented voltage clamp mechanism keeps the voltage drop -VDS(HS) over
the highside at a certain level -VDS(HS)_CL.
5.3.2
Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the
supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY)
if the supply voltage rises above the switch-on voltage VUV(ON).
Note: With decreasing Vs < VUV(OFF)max, activation of the Current Limitation mode may occur before Undervoltage
Shut Down with ambient temperatures less than 25°C. See Table “Switch-OFF Voltage” on Page 18.
5.3.3
Overtemperature Protection
The BTN7933B is protected against overtemperature by an integrated temperature sensor. Overtemperature
leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a
minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis
ΔT in the meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.4
Current Limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch
(high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS.
During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both
MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.
Data Sheet
15
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
IL
tCLS
ICLx
ICLx 0
t
Figure 9
Timing Diagram Current Limitation (Inductive Load)
Low Side Switch
High Side Switch
55
55
Tj = 25°C
45
Tj = -40°C
50
I C L L [A]
I C L H [A]
50
Tj = 150°C
40
45
40
ICLH0
ICLL0
35
35
30
30
25
25
20
Tj = 25°C
Tj = -40°C
Tj = 150°C
20
0
500
1000
1500
2000
0
500
dIL/dt [A/ms]
Figure 10
Data Sheet
1000
1500
2000
dIL/dt [A/ms]
Typical Current Limitation Level vs. Current Slew Rate dI/dt
16
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
Low Side Switch
High Side Switch
50
I C L L [ A]
I C L H [ A]
50
Tj = -40°C
45
Tj = 25°C
40
Tj = 150°C
40
45
Tj = -40°C
35
35
Tj = 25°C
30
30
25
25
Tj = 150°C
20
20
4
6
8
10
12
14
16
18
4
20
6
8
12
14
16
18
20
VS [V]
VS [V]
Figure 11
10
Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7933B
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
5.3.5
Short Circuit Protection
The device is short circuit protected against
•
•
•
output short circuit to ground
output short circuit to supply voltage
short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down of the device.
Data Sheet
17
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.3.6
Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
VS increasing
VS decreasing,
Min.
Typ.
Max.
–
–
5.5
V
3.0
–
4.5
V
Under Voltage Shut Down
5.3.1
5.3.2
Switch-ON Voltage
Switch-OFF Voltage
1)
VUV(ON)
VUV(OFF)
IN = 1, INH = 1
5.3.3
ON/OFF hysteresis
VUV(HY)
3.0
–
5.5
V
VS decreasing,
IN = 0, INH = 1
–
0.2
–
V
2)
27.8
–
–
V
–
30
V
VS decreasing
VS increasing
0.2
–
V
2)
–
–
V
ID(HS) = -1 mA, HSS off,
Over Voltage Mode
5.3.4
Over voltage Mode OFF Voltage VOVM(OFF)
5.3.5
Over voltage Mode ON Voltage
5.3.6
ON/OFF hysteresis
5.3.7
Drain Source Clamp Voltage
High Side Switch
VOVM(ON) 28
VOVM(HY) –
-VDS(HS)_CL 30
2)
Current Limitation
5.3.8
Current Limitation Detection level ICLH0
High Side
30
42
54
A
VS = 13.5 V
5.3.9
Current Limitation Detection level ICLL0
Low Side
20
32
44
A
VS = 13.5 V
tCLS
70
115
210
µs
VS = 13.5 V; 2)
Current Limitation Timing
5.3.10
Shut OFF Time for HS and LS
Thermal Shut Down
5.3.11
Thermal Shut Down Junction
Temperature
TjSD
155
175
200
°C
–
5.3.12
Thermal Switch ON Junction
Temperature
TjSO
150
–
190
°C
–
5.3.13
Thermal Hysteresis
ΔT
–
7
–
K
2)
5.3.14
Reset Pulse at INH Pin (INH low) treset
4
–
–
µs
2)
1) With decreasing Vs < VUV(OFF)max, activation of the Current Limitation mode may occur before Undervoltage Shut Down
with ambient temperatures less than 25°C.
2) Not subject to production test, specified by design
Data Sheet
18
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.4
Control and Diagnostics
5.4.1
Input Circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of
the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH
pin has to be set to low. No external driver is needed. The BTN7933B can be interfaced directly to a
microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2
Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so
called dead time between switching off one MOSFET and switching on the other. The dead time generated in the
driver IC is automatically adjusted to the selected slew rate.
5.4.3
Adjustable Slew Rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external
resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation
within his own application by connecting an external resistor RSR to GND.
5.4.4
Status Flag Diagnosis With Current Sense Capability
The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense
mode), a current source is connected to the status pin, which delivers a current proportional to the forward load
current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the
reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS
determines the voltage per output current. E.g. with the nominal value of 6k for the current sense ratio
kILIS = IL / IIS, a resistor value of RIS = 1 kΩ leads to VIS = (IL / 6 A)V. In case of a fault condition the status output
is connected to a current source which is independent of the load current and provides IIS(lim). The maximum
voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current
limitation the IIS(lim) is activated for 2 * tCLS.
Normal operation:
current sense mode
Fault condition:
error flag mode
VS
VS
ESD-ZD
IIS~ ILoad
IIS(lim)
Figure 12
Data Sheet
ESD-ZD
IS
Sense
output
logic
IIS~ ILoad
RIS VIS
IIS(lim)
Sense
output
logic
IS
R IS V IS
Sense Current and Fault Current
19
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
IIS
[mA]
IIS(lim)
er
low
i
kil
hi
e
alu
v
s
u
val
lis
r ki
ghe
e
Current Sense Mode
(High Side)
Error Flag Mode
ICLx
Figure 13
Sense Current vs. Load Current
5.4.5
Truth Table
Device State
Inputs
Outputs
[A]
Mode
INH
IN
HSS
0
X
OFF
OFF
0
Stand-by mode
1
0
OFF
ON
0
LSS active
1
1
ON
OFF
CS
HSS active
0
X
OFF
(CL)
OFF
1
HSS possible Smart Clamping;
error detected
1
0
OFF
(CL)
OFF
1
Shut-down of LSS,
HSS possible Smart Clamping,
error detected
1
1
ON
OFF
1
HSS active (OC and OT still valid),
LSS off, error detected
Under-Voltage (UV)
X
X
OFF
OFF
0
UV lockout
Overtemperature (OT)
or Short Circuit of HSS or LSS
0
X
OFF
OFF
0
Stand-by mode, reset of latch
1
X
OFF
OFF
1
Shut-down with latch, error detected
Current Limitation Mode/
Overcurrent (OC)
1
1
OFF
ON
1
Switched mode, error detected1)
1
0
ON
OFF
1
Switched mode, error detected1)
Normal Operation
Over-Voltage Mode (OVM)
1) Will return to normal operation after
LSS
IL
IS
tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4)
Inputs
Switches
0 = Logic LOW
OFF = switched off
CS = Current sense mode
1 = Logic HIGH
ON = switched on
1 = Logic HIGH (error)
X = 0 or 1
CL = Smart Clamping
Data Sheet
Status Flag IS
20
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Block Description and Characteristics
5.4.6
Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Control Inputs (IN and INH)
5.4.1
High level Voltage
INH, IN
VINH(H)
VIN(H)
–
–
1.75
1.6
2.15
2
V
–
5.4.2
Low level Voltage
INH, IN
VINH(L)
VIN(L)
1.1
1.4
–
V
–
5.4.3
Input Voltage hysteresis
VINHHY
VINHY
–
–
350
200
–
–
mV
1)
5.4.4
Input Current high level
–
30
150
µA
VIN = VINH = 5.3 V
5.4.5
Input Current low level
IINH(H)
IIN(H)
IINH(L)
IIN(L)
–
25
125
µA
VIN = VINH = 0.4 V
103
RIS = 1 kΩ
IL = 15 A
IL = 8 A
IL = 3 A
VS = 13.5 V
RIS = 1kΩ
VIN = 0 V or
VINH = 0 V
VIN = VINH = 5 V
IL = 0 A
Current Sense
5.4.6
Current Sense ratio in static oncondition
kILIS = IL / IIS
kILIS
4.7
4.1
3.5
6
6
6
8
8.5
9.5
4
5
6.5
mA
5.4.7
Maximum analog Sense Current, IIS(lim)
Sense Current in fault Condition
5.4.8
Isense Leakage current
IISL
–
–
1
µA
5.4.9
Isense Leakage current,
active high side switch
IISH
–
1
80
µA
1) Not subject to production test, specified by design
Data Sheet
21
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Application Information
6
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1
Application Example
Microcontroller
XC866
Voltage Regulator
I/O
WO
Reset
Vdd
RO
Q
D
CQ
22µF
I/O
I/O
I/O
RIN1 RINH1
10kΩ 10kΩ
I/O
TLE
4278G
I
DZ 1
10V
CS
470µF
GND
CD
47nF
Vss
BTN7933B
INH
VS
OUT
CSc1
470nF
CSc2
470nF
M
VS
RSR1
0..51kΩ
e.g.
IPD80P03P4L
-07
R1
10kΩ
RINH2
10kΩ
RIN2
10kΩ
INH
IN
OUT
IS
SR
SR
RIS12
470Ω
VS
BTN7933B
IN
IS
Reverse Polarity
Protection
GND
GND
RSR2
0..51kΩ
High Current H-Bridge
Figure 14
Application Example: H-Bridge with two BTN7933B
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7933B has no separate pin for power ground and logic ground. Therefore it is recommended to assure that
the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of
the device (GND / pin 1) is minimized. If the BTN7933B is used in a H-bridge or B6 bridge design, the voltage
offset between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
Data Sheet
22
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Application Information
6.3
Half-bridge Configuration Considerations
If the BTN7933B is used in a half-bridge configuration with the load connected between OUT and VS and the
supply voltage is exceeding the Overvoltage Mode ON level VOVM(ON), the implemented “Overvoltage mode
(Smart Clamping)” feature leads to automatically turning off the low side switch.
If the load is connected between OUT and GND and the supply voltage is exceeding the Overvoltage Mode ON
level VOVM(ON) while the high side switch is turned off and low side MOSFET is on, the low side MOSFET will be
turned off. If the voltage drop over the high side switch exceeds the high side clamp voltage -VDS(HS)_CL a current
can flow through the high side switch and the load to GND.
It shall be insured that the power dissipated in the NovalithIC™ does not exceed the maximum ratings.
Microcontroller
XC866
Voltage Regulator
I/O
WO
Reset
Vdd
RO
Q
D
CQ
22µF
I/O
I/O
RIN
10kΩ
I/O
RINH
10kΩ
Vss
TLE
4278G
Reverse Polarity
Protection
I
DZ 1
10V
CS
470µF
GND
CD
47nF
R1
10kΩ
VS
e.g.
IPD80P03P4L
-07
BTN7933B
INH
VS
IN
IS
OUT
CSc
470nF
M
SR
RIS
1kΩ
RSR
0..51kΩ
GND
High Current Half-Bridge
Figure 15
Application Example: Half-Bridge with a BTN7933B (Load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
Data Sheet
23
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Package Outlines
7
Package Outlines
4.4
10 ±0.2
1.27 ±0.1
0...0.3
B
0.05
2.4
0.1
4.7 ±0.5
2.7 ±0.3
7.551)
1±0.3
9.25 ±0.2
(15)
A
8.5 1)
0...0.15
7 x 0.6 ±0.1
6 x 1.27
0.5 ±0.1
0.25
M
A B
8˚ MAX.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
0.1 B
GPT09114
Footprint
4.6
16.15
9.4
10.8
0.47
0.8
8.42
Figure 16
PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
24
Dimensions in mm
Rev. 1.0, 2009-09-09
High Current PN Half Bridge
BTN7933B
Revision History
8
Revision History
Revision
Date
Changes
1.0
2009-09-09
Initial version Data Sheet
Data Sheet
25
Rev. 1.0, 2009-09-09
Edition 2009-09-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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