Comset BD201 Silcon epitaxial-base power transitor Datasheet

PNP BD202 – BD204
NPN BD201 – BD203
SILCON EPITAXIAL-BASE POWER TRANSITORS
The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package.
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or
8Ω load.
NPN complements are BD201 and BD203
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCEO
Collector-Emitter Voltage
-VCBO
Collector-Base Voltage
-VEBO
Emitter-Base Voltage
-IC
Collector Current
-IC
-ICM
-ICSM
Collector Current (non-repetitive peak value,tp
max.2 ms)
-IB
Base Current
PD
Total Device Dissipation
TJ
Junction Temperature
TStg
Storage Temperature range
@ TC = 25°
Value
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
Unit
45
60
60
60
V
V
5.0
V
8
A
12
A
25
A
3
A
60
Watts
150
°C
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-mb
Ratings
Thermal Resistance, Junction to mounting
base
Thermal Resistance, Junction to ambient in
free air
COMSET SEMICONDUCTORS
BD202
BD204
BD202
BD204
Value
Unit
70
K/W
2.08
K/W
1/3
PNP BD202 – BD204
NPN BD201 – BD203
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-ICEO
-ICBO
-IEBO
Ratings
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
-VCE=30 V, IB=0V
-VCB=40 V, IE=0V, Tj=150°C
-VBE=5.0 V, IC=0
-VCEO
Collector Emitter Breakdown
IC=0.2 A, IB=0V
Voltage
-VBE
Base Emitter Voltage (1)
-VCEK
Knee Voltage (1)
hFE
DC Current Gain (1)
-VCE(SAT)
Collector-Emitter saturation
Voltage (1)
-VBE(SAT)
Symbol
-IC=3 A, -VCE=2.0 V
-IC=3 A, -IB= value for which
-IC=3.3 A at -VCE=2.0 V
-IC=3 A, -VCE=2.0 V
-IC=2 A, -VCE=20 V
Base-Emitter saturation
Voltage (1)
Ratings
-IC=3 A, -IB=0.3 A
-IC=6 A, -IB=0.6 A
-IC=6 A, -IB=0.6 A
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
BD202
BD204
Cut-off frequency
-IC=0.3 A, -VCE=3.0 V
fT
Transition frequency
-IC=0.3 A, -VCE=3.0 V
f= 1MHz
hFE1/hFE2
Forward bias second
VCE=40 V,tp= 0.1 s
Tamb= 25 °C
breakdown collector current
DC current gain ration of
-IC=1 A, -VCE=2.0 V
matched complementary pairs
ton
Turn-on time
toff
Turn-off time
−ICon=2 A
−IBon =IBoff =0.2 A
-
-
0.2
mA
-
-
1
mA
-
-
0.5
mA
45
60
-
-
V
-
-
1.5
V
-
1
-
V
30
30
-
-
-
-
-
1
-
-
1.5
-
-
2
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
BD201
BD203
25
-
-
KHz
7
-
-
MHz
1.5
-
-
A
2.5
-
-
-
-
-
1
-
-
2
µs
(1) Pulse conditions : tp < 300 µs, δ =2%
COMSET SEMICONDUCTORS
V
Min Typ Mx Unit
Test Condition(s)
fhfe
Is/b
Min Typ Mx Unit
Test Condition(s)
3/3
PNP BD202 – BD204
NPN BD201 – BD203
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,52
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
base
Collector
emitter
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
3/3
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