HIGH-SPEED 3.3V 256/128K x 18 IDT70V3319/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.) – Industrial: 4.2ns (133MHz) (max.) Selectable Pipelined or Flow-Through output mode – Due to limited pin count PL/FT option is not supported on the 128-pin TQFP package. Device is pipelined outputs only on each port. Counter enable and repeat features Dual chip enables allow for depth expansion without additional logic Full synchronous operation on both ports – 6ns cycle time, 166MHz operation (6Gbps bandwidth) – Fast 3.6ns clock to data out – 1.7ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 166MHz – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility Dual Cycle Deselect (DCD) for Pipelined Output mode LVTTL- compatible, single 3.3V (±150mV) power supply for core LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port Industrial temperature range (-40°C to +85°C) is available at 133MHz. Available in a 128-pin Thin Quad Flatpack, 208-pin fine pitch Ball Grid Array, and 256-pin Ball Grid Array Supports JTAG features compliant to IEEE 1149.1 – Due to limited pin count, JTAG is not supported on the 128-pin TQFP package. ◆ ◆ ◆ ◆ ◆ ◆ ◆ Functional Block Diagram FT/PIPEL UBL UBR LBL LBR 1/0 0a 1a 0b 1b 1b 0b 1a 0a a b b a FT/PIPER 1/0 R/WL R/WR CE0L CE1L CE0R CE1R 1 1 B B WW 0 1 L L 0 1/0 B B WW 1 0 R R Dout0-8_L Dout9-17_L OEL 0 1/0 Dout0-8_R Dout9-17_R OER , 0a 1a 0b 1b 1b 0b 1a 0a FT/PIPEL FT/PIPE R 0/1 0/1 ab ba 256K x 18 MEMORY ARRAY Din_L I/O0L - I/O17L I/O0R - I/O17R Din_R CLKR CLKL A0L REPEATL ADSL CNTENL Counter/ Address Reg. Counter/ Address Reg. ADDR_R ADDR_L TDI NOTE: 1. A17 is a NC for IDT70V3399. , A17R(1) A17L(1) JTAG TDO TCK TMS TRST A0R REPEATR ADSR CNTENR 5623 tbl 01 MAY 2003 1 ©2003 Integrated Device Technology, Inc. DSC 5623/7 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Description: The IDT70V3319/99 is a high-speed 256/128K x 18 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70V3319/99 has been optimized for applications having unidirectional Industrial and Commercial Temperature Ranges or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319/99 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V. Pin Configuration(1,2,3,4,5) 08/01/02 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 I/O9L NC VSS TDO NC A16L A12L A8L NC VDD CLKL CNTENL A4L A0L OPTL NC VSS A NC VSS NC TDI A17L(1) A13L A9L NC CE0L VSS ADSL A5L A1L VSS VDDQR I/O8L NC B VDDQL I/O9R VDDQR PIPE/FTL NC A14L A10L UBL CE1L VSS R/WL A6L A2L VDD I/O8R NC VSS C NC VSS I/O10L A15L A11L A7L LBL VDD OEL REPEATL A3L VDD NC VDDQL I/O7L I/O7R D I/O11L NC VDDQR I/O10R I/O6L NC VSS NC E VDDQL I/O11R NC VSS VSS I/O6R NC VDDQR F NC VSS I/O12L NC NC VDDQL I/O5L NC G VDD NC VDDQR I/O12R VDD NC VSS I/O5R H VDDQL VDD VSS VSS VSS VDD VSS VDDQR J I/O14R VSS I/O13R VSS I/O3R VDDQL I/O4R VSS K NC I/O14L VDDQR I/O13L NC I/O3L VSS I/O4L L VDDQL NC I/O15R VSS VSS NC I/O2R VDDQR M NC VSS NC I/O15L I/O1R VDDQL NC I/O2L N I/O16R I/O16L VDDQR NC TRST A16R A12R A8R NC VDD CLKR CNTEN R A4R NC I/O1L VSS NC P VSS NC I/O17R TCK A17R(1) A13R A9R NC CE0R VSS ADSR A5R A1R VSS VDDQL I/O0R VDDQR R NC I/O17L VDDQL TMS NC A14R A10R UBR CE1R VSS R/WR A6R A2R VSS NC VSS NC T VSS NC PIPE/FTR NC A15R A11R A7R LBR VDD A3R A0R VDD OPTR NC I/O0L U NC 70V3319/99BF BF-208(6) 208-Pin fpBGA Top View(7) OER REPEATR 5623 drw 02c NOTES: 1. A17 is a NC for IDT70V3399. 2. All VDD pins must be connected to 3.3V power supply. 3. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 4. All VSS pins must be connected to ground supply. 5. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch. 6. This package code is used to reference the package diagram. 7. This text does not indicate orientation of the actual part-marking. 6.42 2 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Pin Configuration(1,2,3,4,5) (con't.) 70V3319/99BC BC-256(6) 256-Pin BGA Top View(7) 08/01/02 A1 NC B1 NC C1 NC D1 NC E1 A2 TDI B2 NC C2 I/O9L D2 I/O9R E2 I/O10R I/O10L F1 F2 I/O11L G1 NC H1 NC J1 NC G2 NC H2 I/O12R J2 A3 NC B3 TDO C3 VSS D3 NC E3 NC F3 A4 B4 NC C4 A16L D4 E4 VDDQL F4 G4 I/O12L VDDQR H3 NC J3 H4 NC L1 I/O15L M1 K2 NC L2 NC M2 I/O16R I/O16L N1 NC P1 NC R1 NC T1 NC N2 I/O17R P2 K3 J4 NC T2 TCK C5 A13L D5 E5 VDD F5 VDD G5 VSS H5 L4 J5 VSS K5 VSS L5 I/O15R VDDQR VDD M3 NC N3 NC P3 I/O17L TMS R2 K4 I/O14L VDDQL L3 A15L VDDQR VSS I/O13L I/O14R I/O13R VDDQL K1 B5 R3 TRST T3 NC A6 A11L B6 A12L C6 A10L D6 A7 A8L B7 A9L C7 NC CE1L B9 B8 C8 C9 LBL NC D9 D8 A10 A11 OEL CNTENL B10 B11 CE0L R/WL REPEATL UBL A7L D7 A9 A8 C10 C11 CLKL ADSL D10 D11 A12 A5L B12 A4L C12 A6L D12 A13 A2L B13 A1L C13 A3L D13 PIPE/FTL VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O11R VDDQL G3 A5 A17L(1) A14L M4 VDDQR N4 M5 VDD N5 E6 VDD F6 VSS G6 VSS H6 VSS J6 VSS K6 VSS L6 VSS M6 VDD N6 E7 VSS F7 VSS G7 VSS H7 VSS J7 VSS K7 VSS L7 VSS M7 VSS N7 E8 E9 VSS VSS F9 F8 VSS VSS G8 G9 VSS H8 VSS H9 VSS J8 VSS J9 VSS K8 VSS K9 VSS L8 VSS L9 VSS VSS M9 M8 VSS N8 VSS N9 E10 VSS F10 VSS G10 VSS H10 VSS J10 VSS K10 VSS L10 VSS M10 VSS N10 E11 VDD F11 VSS G11 VSS H11 VSS J11 VSS K11 VSS L11 VSS M11 VDD N11 E12 F12 A16R R4 NC T4 P5 A13R R5 A15R T5 A17R(1) A14R P6 A10R R6 A12R T6 A11R P7 A7R R7 A9R T7 A8R P9 P8 LBR NC R8 R9 UBR T8 P10 P11 CLKR ADSR R10 R11 CE0R R/WR REPEATR T9 NC CE1R T10 T11 OER CNTENR F13 A0L B14 VDD C14 OPTL D14 NC E14 NC F14 VDD VDDQR I/O6R G12 VSS H12 VSS J12 VSS K12 VSS L12 VDD M12 VDD N12 PIPE/FT R VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL P4 E13 VDD VDDQR A14 P12 A6R R12 A4R T12 A5R G13 G14 VDDQL I/O5L H13 VDDQL J13 H14 NC J14 A15 A16 NC B15 B16 NC VDDQR L13 K14 NC L14 VDDQL I/O2L M13 M14 VDDQL I/O1R N13 VDD P13 A3R R13 A1R T13 A2R N14 NC P14 NC R14 OPTR T14 A0R NC C16 C15 NC D15 I/O8L D16 NC I/O8R E16 E15 I/O7L I/O7R F16 F15 NC G15 I/O6L G16 NC NC H16 H15 NC I/O5R J16 J15 VDDQR I/O4R I/O3R K13 NC K15 I/O4L K16 NC I/O3L L16 L15 NC I/O2R M16 M15 I/O1L NC N16 N15 I/O0R P15 NC P16 NC I/O0L R16 R15 NC T15 NC , T16 NC NC 5623 drw 02d , NOTES: 1. A17 is a NC for IDT70V3399. 2. All VDD pins must be connected to 3.3V power supply. 3. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 4. All VSS pins must be connected to ground supply. 5. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch. 6. This package code is used to reference the package diagram. 7. This text does not indicate orientation of the actual part-marking. 6.42 3 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges A14L A15L A16L 70V3319/99PRF PK-128(6) 128-Pin TQFP Top View(7) 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 A13R A12R A11R A10R A9R A8R A7R UBR LBR CE1R CE0R VDD VDD VSS VSS CLKR OER R/WR ADSR CNTENR REPEATR A6R A5R A4R A3R A2R A17L(1) IO9L IO9R VDDQL VSS IO10L IO10R VDDQR VSS IO11L IO11R IO12L IO12R VDD VDD VSS VSS IO13R IO13L IO14R IO14L IO15R IO15L VDDQL VSS IO16R IO16L VDDQR VSS IO17R IO17L A17R(1) A16R A15R A14R 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 08/06/02 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 104 103 A13L A12L A11L A10L A9L A8L A7L UBL LBL CE1L CE0L VDD VDD VSS VSS CLKL OEL R/WL ADSL CNTENL REPEATL A6L A5L A4L A3L A2L Pin Configuration(1,2,3,4,5,8,9) (con't.) A1L A0L OPTL VSS IO8L IO8R VSS VSS VDDQL IO7L IO7R VSS VDDQR IO6L IO6R IO5L IO5R VDD VDD VSS VSS IO4R IO4L IO3R IO3L IO2R IO2L VSS VDDQL IO1R IO1L VSS VDDQR IO0R IO0L OPTR A0R A1R 5623 drw 02a . NOTES: 1. A17 is a NC for IDT70V3399. 2. All VDD pins must be connected to 3.3V power supply. 3. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V). 4. All VSS pins must be connected to ground supply. 5. Package body is approximately 14mm x 20mm x 1.4mm. 6. This package code is used to reference the package diagram. 7. This text does not indicate orientation of the actual part-marking. 8. PIPE/FT option in PK-128 is not supported due to limitation in pin count. Device is pipelined outputs only on each port. 9. Due to the limited pin count, JTAG is not supported in the PK-128 package. 6.42 4 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port Right Port Names (6) CE0L, CE 1L CE0R, CE1R Chip Enables R/WL R/WR Read/Write Enable Output Enable OER OEL (1) (1) A 0L - A17L A0R - A17R I/O0L - I/O17L I/O0R - I/O17R Data Input/Output CLK L CLKR Clock (5) (5) Address PIPE/FTL PIPE/FTR Pipeline/Flow-Through ADSL ADSR Address Strobe Enable CNTENL CNTENR Counter Enable REPEATL REPEATR Counter Repeat(4) UBL UBR Upper Byte Enable (I/O9-I/O17)(6) LBL LBR Lower Byte Enable (I/O0-I/O8)(6) VDDQL V DDQR Power (I/O Bus) (3.3V or 2.5V)(2) OPTL OPTR Option for selecting VDDQX(2,3) V DD Power (3.3V)(2) V SS Ground (0V) TDI Test Data Input TDO Test Data Output TCK Test Logic Clock (10MHz) TMS Test Mode Select TRST Reset (Initialize TAP Controller) 5623 tbl 01 NOTES: 1. A17 is a NC for IDT70V3399. 2. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 3. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that port's I/Os and address controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 4. When REPEATX is asserted, the counter will reset to the last valid address loaded via ADS X. 5. PIPE/FT option in PK-128 package is not supported due to limitation in pin count. Device is pipelined output mode only on each port. 6. Chip Enables and Byte Enables are double buffered when PL/FT = VIH, i.e., the signals take two cycles to deselect. 6.42 5 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Truth Table I—Read/Write and Enable Control(1,2,3) OE CLK CE0 CE1 UB LB R/W Upper Byte I/O9-17 Lower Byte I/O0-8 X ↑ H X X X X High-Z High-Z Deselected–Power Down X ↑ X L X X X High-Z High-Z Deselected–Power Down X ↑ L H H H X High-Z High-Z Both Bytes Deselected X ↑ L H H L L High-Z DIN Write to Lower Byte Only X ↑ L H L H L DIN High-Z Write to Upper Byte Only X ↑ L H L L L DIN DIN L ↑ L H H L H High-Z DOUT Read Lower Byte Only L ↑ L H L H H DOUT High-Z Read Upper Byte Only L ↑ L H L L H DOUT DOUT Read Both Bytes H ↑ L H L L X High-Z High-Z Outputs Disabled MODE Write to Both Bytes 5623 tbl 02 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, REPEAT = VIH. 3. OE is an asynchronous input signal. Truth Table II—Address Counter Control(1,2) External Address Previous Internal Address Internal Address Used CLK ADS CNTEN REPEAT(6) X X An ↑ X X L(4) DI/O(0) Counter Reset to last valid ADS load An X An ↑ L(4) X H DI/O (n) External Address Used An Ap Ap ↑ H H H DI/O(p) External Address Blocked—Counter disabled (Ap reused) H DI/O(p+1) X Ap Ap + 1 ↑ H (5) L MODE I/O(3) Counter Enabled—Internal Address generation 5623 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, UB, LB and OE. 3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the date out will be delayed by one cycle. 4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and UB, LB. 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, UB, LB. 6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location. 6.42 6 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Recommended Operating Temperature and Supply Voltage(1) Grade Commercial Industrial Min. Typ. Max. Unit V DD Core Supply Voltage 3.15 3.3 3.45 V 3.3V + 150mV VDDQ I/O Supply Voltage (3) 2.4 2.5 2.6 V 3.3V + 150mV V SS Ground 0 0 0 GND VDD 0 C to +70 C 0V -40 C to +85 C 0V O O O Recommended DC Operating Conditions with VDDQ at 2.5V Symbol Ambient Temperature O Industrial and Commercial Temperature Ranges 5623 tbl 04 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Parameter V (2) V VIH Input High Voltage (Address & Control Inputs) 1.7 ____ V DDQ + 100mV VIH Input High Voltage - I/O(3) 1.7 ____ V DDQ + 100mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.7 V 5623 tbl 05a NOTES: 1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed. 2. VTERM must not exceed VDDQ + 100mV. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied as indicated above. Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C Symbol Min. Typ. Max. Unit TJN Junction Temperature +150 o C V DD Core Supply Voltage 3.15 3.3 3.45 V IOUT DC Output Current mA VDDQ I/O Supply Voltage (3) 3.15 3.3 3.45 V V SS Ground 0 0 0 50 Recommended DC Operating Conditions with VDDQ at 3.3V 5623 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. 3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected. Parameter V (2) V VIH Input High Voltage (Address & Control Inputs)(3) 2.0 ____ VDDQ + 150mV VIH Input High Voltage - I/O(3) 2.0 ____ VDDQ + 150mV(2) V VIL Input Low Voltage -0.3(1) ____ 0.8 V 5623 tbl 05b NOTES: 1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed. 2. VTERM must not exceed VDDQ + 150mV. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be supplied as indicated above. 6.42 7 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Capacitance(1)(TA = +25°C, F = 1.0MHZ) Symbol CIN Parameter Input Capacitance (3) COUT Output Capacitance Conditions(2) Max. Unit VIN = 3dV 8 pF VOUT = 3dV 10.5 pF 5623 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV) 70V3319/99S Symbol Min. Max. Unit VDDQ = Max., VIN = 0V to V DDQ ___ 10 µA Output Leakage Currentt CE0 = VIH or CE1 = VIL, VOUT = 0V to V DDQ ___ 10 µA VOL (3.3V) Output Low Voltage(2) IOL = +4mA, VDDQ = Min. ___ 0.4 V VOH (3.3V) Output High Voltage (2) IOH = -4mA, VDDQ = Min. 2.4 ___ V VOL (2.5V) (2) IOL = +2mA, VDDQ = Min. ___ 0.4 V (2) IOH = -2mA, VDDQ = Min. 2.0 ___ V |ILI| |ILO | VOH (2.5V) Parameter (1) Input Leakage Current (1) Output Low Voltage Output High Voltage Test Conditions 5623 tbl 08 NOTE: 1. At VDD < 2.0V leakages are undefined. 2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details. 6.42 8 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV) Symbol IDD ISB1 ISB2 ISB3 ISB4 Parameter Test Condition Version 70V3319/99S166 Com'l Only 70V3319/99S133 Com'l & Ind Typ.(4) Max. Typ. (4) Max. Unit mA Dynamic Operating Current (Both Ports Active) CEL and CER= VIL, Outputs Disabled, f = fMAX(1) COM'L S 370 500 320 400 IND S ____ ____ 320 480 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH, Outputs Disabled, f = fMAX(1) COM'L S 125 200 115 160 IND S ____ ____ 115 195 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(1) COM'L S 250 350 220 290 IND S ____ ____ 220 350 Full Standby Current (Both Ports - CMOS Level Inputs) Both Ports Outputs Disabled CEL and CER > VDD - 0.2V, VIN > VDD - 0.2V or VIN < 0.2V, f = 0(2) COM'L S 15 30 15 30 IND S ____ ____ 15 40 Full Standby Current (One Port - CMOS Level Inputs) CE"A" < 0.2V and CE"B" > VDD - 0.2V(5) VIN > VDD - 0.2V or VIN < 0.2V Active Port, Outp uts Disabled , f = f MAX(1) COM'L S 250 350 220 290 IND S ____ ____ 220 350 mA mA mA mA 5623 tbl 09 NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input levels of GND to 3V. 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ). 5. CEX = V IL means CE0X = VIL and CE1X = VIH CEX = VIH means CE0X = VIH or CE1X = VIL CEX < 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V CEX > VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V "X" represents "L" for left port or "R" for right port. 6.42 9 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions (VDDQ - 3.3V/2.5V) Input Pulse Levels (Address & Controls) GND to 3.0V/GND to 2.4V Input Pulse Levels (I/Os) GND to 3.0V/GND to 2.4V Input Rise/Fall Times 2.5V 833Ω 2ns Input Timing Reference Levels 1.5V/1.25V Output Reference Levels 1.5V/1.25V Output Load DATAOUT 5pF* 770Ω Figures 1 and 2 5623 tbl 10 , 3.3V 590Ω 50Ω 50Ω DATAOUT 1.5V/1.25 10pF (Tester) , DATAOUT 435Ω 5pF* 5623 drw 03 Figure 1. AC Output Test load. 5623 drw 04 Figure 2. Output Test Load (For tCKLZ , tCKHZ, tOLZ, and tOHZ). *Including scope and jig. 10.5pF is the I/O capacitance of this device, and 10pF is the AC Test Load Capacitance. 7 6 5 4 ∆tCD (Typical, ns) 3 2 • 1 • 20.5 • 30 • 50 80 100 200 -1 Capacitance (pF) 5623 drw 05 Figure 3. Typical Output Derating (Lumped Capacitive Load). 6.42 10 , , IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing)(2,3) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C) 70V3319/99S166 Com'l Only Symbol tCYC1 tCYC2 tCH1 tCL1 Parameter Clock Cycle Time (Flow-Through)(1) (1) Clock Cycle Time (Pipelined) 70V3319/99S133 Com'l & Ind Min. Max. Min. Max. Unit 20 ____ 25 ____ ns ns 6 ____ 7.5 ____ (1) 6 ____ 7 ____ ns (1) ns Clock High Time (Flow-Through) 6 ____ 7 ____ tCH2 Clock High Time (Pipelined) (2) 2.1 ____ 2.6 ____ ns tCL2 Clock Low Time (Pipelined)(1) 2.1 ____ 2.6 ____ ns tSA Address Setup Time 1.7 ____ 1.8 ____ ns tHA Address Hold Time 0.5 ____ 0.5 ____ ns tSC Chip Enable Setup Time 1.7 ____ 1.8 ____ ns tHC Chip Enable Hold Time 0.5 ____ 0.5 ____ ns tSB Byte Enable Setup Time 1.7 ____ 1.8 ____ ns tHB Byte Enable Hold Time 0.5 ____ 0.5 ____ ns tSW R/W Setup Time 1.7 ____ 1.8 ____ ns tHW R/W Hold Time 0.5 ____ 0.5 ____ ns tSD Input Data Setup Time 1.7 ____ 1.8 ____ ns tHD Input Data Hold Time 0.5 ____ 0.5 ____ ns tSAD ADS Setup Time 1.7 ____ 1.8 ____ ns ADS Hold Time 0.5 ____ 0.5 ____ ns CNTEN Setup Time 1.7 ____ 1.8 ____ ns tHCN CNTEN Hold Time 0.5 ____ 0.5 ____ ns tSRPT REPEAT Setup Time 1.7 ____ 1.8 ____ ns tHRPT REPEAT Hold Time 0.5 ____ 0.5 ____ ns tOE Output Enable to Data Valid ____ 4.0 ____ 4.2 ns tOLZ Output Enable to Output Low-Z 1 ____ 1 ____ ns tOHZ Output Enable to Output High-Z tHAD tSCN tCD1 Clock Low Time (Flow-Through) Clock to Data Valid (Flow-Through) (1) (1) 1 3.6 1 4.2 ns ____ 12 ____ 15 ns ____ 3.6 ____ 4.2 ns ns tCD2 Clock to Data Valid (Pipelined) tDC Data Output Hold After Clock High 1 ____ 1 ____ tCKHZ Clock High to Output High-Z 1 3 1 3 ns tCKLZ Clock High to Output Low-Z 1 ____ 1 ____ ns 5 ____ 6 ____ Port-to-Port Delay tCO Clock-to-Clock Offset ns 5623 tbl 11 NOTES: 1. The Pipelined output parameters (t CYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = VIL for that port. 2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a DC signal, i.e. steady state during operation. 3. These values are valid for either level of V DDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port. 6.42 11 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE'X' = VIH)(2) tCYC2 tCH2 tCL2 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tSB tHB UB, LB R/W ADDRESS (4) tSW tHW tSA tHA An An + 1 (1 Latency) An + 2 An + 3 tDC tCD2 DATAOUT Qn tCKLZ OE tHB (5) Qn + 1 Qn + 2 (5) (1) tOHZ tOLZ (1) tOE 5623 drw 06 Timing Waveform of Read Cycle for Flow-through Output (FT/PIPE"X" = VIL)(2,6) tCYC1 tCH1 tCL1 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tHB UB, LB tSB R/W tHB tSW tHW tSA (4) ADDRESS tHA An An + 1 tCD1 DATAOUT An + 2 tCKHZ Qn Qn + 2 (5) Qn + 1 tCKLZ OE An + 3 tDC tOHZ tOLZ tDC (1) tOE NOTES: 1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and REPEAT = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, UB, LB = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If UB, LB was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 6. "x" denotes Left or Right port. The diagram is with respect to that port. 6.42 12 5623 drw 07 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of a Multi-Device Pipelined Read(1,2) tCH2 tCYC2 tCL2 CLK tSA tHA A0 ADDRESS(B1) tSC tHC CE0(B1) tSC tHC tCD2 tCD2 tCKHZ Q0 DATAOUT(B1) tSA A0 tSC Q3 tCKLZ tDC tCKHZ tHA A6 A5 A4 A3 A2 A1 tSC CE0(B2) tCD2 Q1 tDC ADDRESS(B2) A6 A5 A4 A3 A2 A1 tHC tHC tCD2 DATAOUT(B2) tCKHZ tCD2 Q4 Q2 tCKLZ tCKLZ 5623 drw 08 Timing Waveform of a Multi-Device Flow-Through Read(1,2) tCH1 tCYC1 tCL1 CLK tSA A0 ADDRESS(B1) CE0(B1) tHA tSC A6 A5 A4 A3 A2 A1 tHC tSC tHC tCD1 tCD1 D0 DATAOUT(B1) tCKHZ tCD1 D3 tCKLZ tDC (1) D5 tCKHZ (1) tCKLZ (1) tHA A0 ADDRESS(B2) tCD1 D1 tDC tSA (1) A1 A6 A5 A4 A3 A2 tSC tHC CE0(B2) tSC tHC tCD1 DATAOUT(B2) tCKLZ (1) tCKHZ (1) tCD1 D2 tCKLZ (1) tCKHZ (1) D4 5623 drw 09 NOTES: 1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V3319/99 for this waveform, and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation. 2. UB, LB, OE, and ADS = VIL; CE1(B1), CE 1(B2), R/W, CNTEN, and REPEAT = VIH. 6.42 13 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2,4) CLK"A" tSW tHW tSA tHA R/W"A" ADDRESS"A" tSD DATAIN"A" NO MATCH MATCH tHD VALID tCO(3) CLK"B" tCD2 R/W"B" ADDRESS"B" tSW tHW tSA tHA NO MATCH MATCH DATAOUT"B" VALID tDC 5623 drw 10 NOTES: 1. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = V IH. 2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2 ). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + t CYC2 + t CD2). 4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A" Timing Waveform with Port-to-Port Flow-Through Read(1,2,4) CLK "A" tSW tHW tSA tHA R/W "A" ADDRESS "A" tSD DATAIN "A" NO MATCH MATCH tHD VALID tCO (3) CLK "B" tCD1 R/W "B" ADDRESS "B" tSW tHW tSA tHA NO MATCH MATCH tCD1 DATAOUT "B" VALID VALID tDC tDC 5623 drw 11 NOTES: 1. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = V IH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + t CYC + tCD1 ). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + t CD1). 4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A". 6.42 14 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read tCYC2 (OE = VIL)(2) tCH2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W (3) ADDRESS tSW tHW An tSA tHA An +1 An + 2 An + 3 An + 2 An + 4 tSD tHD DATAIN Dn + 2 tCD2 (1) tCKHZ tCKLZ tCD2 Qn + 3 Qn DATAOUT READ NOP (4) WRITE READ 5623 drw 12 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = V IL; CE1, CNTEN, and REPEAT = V IH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2) tCH2 tCYC2 tCL2 CLK CE0 tSC tHC tSB tHB CE1 UB, LB tSW tHW R/W tSW tHW (3) ADDRESS An tSA tHA An +1 An + 2 tSD DATAIN Dn + 2 tCD2 (1) Qn DATAOUT An + 3 An + 4 An + 5 tHD Dn + 3 tCKLZ tCD2 Qn + 4 (4) tOHZ OE READ WRITE READ 5623 drw 13 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE 0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH . 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. 6.42 15 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2) tCH1 tCYC1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW R/W tSW tHW (3) ADDRESS tSA An tHA An +1 An + 2 An + 4 An + 3 An + 2 tSD tHD DATAIN Dn + 2 tCD1 (1) tCD1 Qn DATAOUT tCD1 tCD1 Qn + 1 tDC tCKHZ (5) NOP READ tCKLZ WRITE Qn + 3 tDC READ 6523 drw 14 Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB UB, LB tSW tHW tSW tHW R/W (3) An tSA tHA ADDRESS An +1 DATAIN (1) DATAOUT An + 2 tSD tHD An + 3 Dn + 2 Dn + 3 tDC tCD1 An + 4 tOE tCD1 Qn tCKLZ tOHZ An + 5 tCD1 Qn + 4 tDC OE READ WRITE READ 5623 drw 15 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = V IH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity. 6.42 16 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qn + 2(2) Qn + 1 Qn Qx Qn + 3 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5623 drw 16 Timing Waveform of Flow-Through Read with Address Counter Advance(1) tCH1 tCYC1 tCL1 CLK tSA ADDRESS tHA An tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tCD1 DATAOUT Qx(2) Qn Qn + 1 Qn + 2 Qn + 3(2) Qn + 4 tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5623 drw 17 NOTES: 1. CE 0, OE, UB, LB = VIL; CE1, R/W, and REPEAT = VIH. 2. If there is no address change via ADS = V IL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data output remains constant for subsequent clocks. 6.42 17 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs)(1) tCH2 tCYC2 tCL2 CLK tSA tHA An ADDRESS INTERNAL(3) ADDRESS An(7) An + 2 An + 1 An + 4 An + 3 tSAD tHAD ADS tSCN tHCN CNTEN tSD tHD Dn + 1 Dn DATAIN WRITE EXTERNAL ADDRESS Dn + 1 Dn + 4 Dn + 3 Dn + 2 WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 5623 drw 18 Timing Waveform of Counter Repeat(2) tCH2 tCYC2 tCL2 CLK tSA tHA (4) An ADDRESS INTERNAL(3) ADDRESS LAST ADS LOAD Ax An + 2 An + 1 LAST ADS +1 An An + 1 tSW tHW R/W ADS t SAD tHAD CNTEN tSCN tHCN tSRPT tHRPT REPEAT tSD tHD D0 DATAIN (5) QLAST DATAOUT (6) EXECUTE REPEAT WRITE LAST ADS ADDRESS READ LAST ADS ADDRESS READ LAST ADS ADDRESS + 1 QLAST+1 READ ADDRESS n Qn READ ADDRESS n+1 5623 drw 19 NOTES: 1. CE0, UB, LB, and R/W = VIL; CE1 and REPEAT = VIH. 2. CE0, UB, LB = V IL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 6. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid ADS load will be accessed. Extra cycles are shown here simply for clarification. For more information on REPEAT function refer to Truth Table II. 7. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6.42 18 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Functional Description Depth and Width Expansion The IDT70V3319/99 provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse is independent of the LOW to HIGH transition of the clock signal. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70V3319/99s for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to re-activate the outputs. The IDT70V3319/99 features dual chip enables (refer to Truth Table I) in order to facilitate rapid and simple depth expansion with no requirements for external logic. Figure 4 illustrates how to control the various chip enables in order to expand two devices in depth. The IDT70V3319/99 can also be used in applications requiring expanded width, as indicated in Figure 4. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 36-bits or wider. A18/A17(1) IDT70V3319/99 CE0 CE1 IDT70V3319/99 CE1 VDD VDD Control Inputs Control Inputs IDT70V3319/99 CE0 IDT70V3319/99 CE1 CE1 CE0 CE0 Control Inputs Control Inputs 5623 drw 20 Figure 4. Depth and Width Expansion with IDT70V3319/99 NOTE: 1. A17 is for IDT70V3319, A16 is for IDT70V3399. 6.42 19 UB, LB, R/W, OE, CLK, ADS, REPEAT, CNTEN IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges JTAG Timing Specifications tJF tJCL tJCYC tJR tJCH TCK Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO tJDC tJH tJRSR tJCD TRST , 5623 drw 21 tJRST Figure 5. Standard JTAG Timing NOTES: 1. Device inputs = All device inputs except TDI, TMS, and TRST. 2. Device outputs = All device outputs except TDO. JTAG AC Electrical Characteristics(1,2,3,4) 70V3319/99 Symbol Parameter Min. Max. Units tJCYC JTAG Clock Input Period 100 ____ ns tJCH JTAG Clock HIGH 40 ____ ns tJCL JTAG Clock Low 40 ____ ns (1) tJR JTAG Clock Rise Time ____ 3 ns tJF JTAG Clock Fall Time ____ 3(1) ns tJRST JTAG Reset 50 ____ ns tJRSR JTAG Reset Recovery 50 ____ ns tJCD JTAG Data Output ____ 25 ns tJDC JTAG Data Output Hold 0 ____ ns tJS JTAG Setup 15 ____ ns tJH JTAG Hold 15 ____ ns 5623 tbl 12 NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet. 6.42 20 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Identification Register Definitions Instruction Field Value Revision Number (31:28) IDT Device ID (27:12) Description 0x0 Reserved for version number (1) 0x0314 IDT JEDEC ID (11:1) 0x33 ID Register Indicator Bit (Bit 0) Defines IDT part number Allows unique identification of device vendor as IDT 1 Indicates the presenc e of an ID register 5623 tbl 13 NOTE: 1. Device ID for IDT70V3399 is 0x0315. Scan Register Sizes Register Name Bit Size Instruction (IR) 4 Bypass (BYR) 1 Identification (IDR) Boundary Scan (BSR) 32 Note (3) 5623 tbl 14 System Interface Parameters Instruction Code Description EXTEST 0000 Forces contents of the boundary scan cells onto the device outputs(1). Places the boundary scan registe r (BSR) between TDI and TDO. BYPASS 1111 Places the by pass register (BYR) between TDI and TDO. IDCODE 0010 Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. 0011 Places the bypass register (BYR) be tween TDI and TDO. Forces all device output drivers to a High-Z state. 0001 Places the boundary scan registe r (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the b oundary scan cells via the TDI. All other codes Several combinations are reserved. Do not use codes other than those identified above. HIGHZ SAMPLE/PRELOAD RESERVED NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST. 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. 6.42 21 5623 tbl 15 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Ordering Information IDT XXXXX A 999 A A Device Type Power Speed Package Process/ Temperature Range Blank I Commercial (0°C to +70°C) Industrial (-40°C to +85°C) BF PRF BC 208-pin fpBGA (BF-208) 128-pin TQFP (PK-128) 256-pin BGA (BC-256) 166 133 Commercial Only Commercial & Industrial S Standard Power Speed in Megahertz 70V3319 4Mbit (256K x 18-Bit) Synchronous Dual-Port RAM 70V3399 2Mbit (128K x 18-Bit) Synchronous Dual-Port RAM 5623 drw 22 IDT Clock Solution for IDT70V3319/99 Dual-Port Dual-Port I/O Specitications IDT Dual-Port Part Number Voltage 70V3319/99 3.3/2.5 Clock Specifications I/O Input Capacitance Input Duty Cycle Requirement Maximum Frequency Jitter Tolerance IDT PLL Clock Device LVTTL 8pF 40% 166 75ps IDT5V2528 5623 tbl 16a 6.42 22 IDT70V3319/99S High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Datasheet Document History: 06/02/00: 07/12/00: 06/20/01: 07/30/01: 11/20/01: 08/06/02: 05/19/03: Initial Public Offering Page 1 Added mux to functional block diagram Page 1 Added JTAG information for TQFP package Page 4 Corrected TQFP package size Page 1 Added PL/FToption Page 20 Changed maximum value for JTAG AC Electrical Characteristics for tJCD from 20ns to 25ns Page 9 Added Industrial Temperature DC Parameters Page 2, 3 & 4 Added date revision for pin configurations Page 11 Changed tOE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05 Page 1 & 22 Replaced TM logo with ® logo Page 10 Changed AC Test Conditions Input Rise/Fall Times Consolidated multiple devices into one datasheet Page 1 & 5 Added DCD capability for Pipelined Outputs Page 7 Clarified TBIAS and added TJN Page 9 Changed DC Electrical Parameters Page 11 Removed Clock Rise & Fall Time from AC Electrical Characteristics Table Removed Preliminary status Page 11 Added Byte Enable SetupTime & Byte Enable Hold Time to AC Elecctrical Characteristics Table Page 22 Added IDT Clock Solution Table CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-5166 fax: 408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 23 for Tech Support: 831-754-4613 [email protected]