Samsung K4F661612B-L 4m x 16bit cmos dynamic ram with fast page mode Datasheet

K4F661612B,K4F641612B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsung′s
advanced CMOS process to realize high band-width, low power consumption and high reliability.
• Fast Page Mode operation
FEATURES
• 2CAS Byte/Word Read/Write operation
• Part Identification
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
- K4F661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4F641612B-TC/L(3.3V, 4K Ref., TSOP)
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Active Power Dissipation
Unit : mW
• Early Write or output enable controlled write
Speed
8K
4K
• JEDEC Standard pinout
-45
360
468
• Available in Plastic TSOP(II) packages
-50
324
432
• +3.3V±0.3V power supply
-60
288
396
• Refresh Cycles
Refresh
cycle
K4F661612B*
8K
K4F641612B
4K
FUNCTIONAL BLOCK DIAGRAM
Refresh time
Normal
L-ver
64ms
128ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
RAS
UCAS
LCAS
W
Refresh Timer
Refresh Counter
tRAC
tCAC
tRC
tPC
-45
45ns
12ns
80ns
31ns
-50
50ns
13ns
90ns
35ns
-60
60ns
15ns
110ns
40ns
A0~A12
(A0~A11)*1
Row Address Buffer
A0~A8
(A0~A9)*1
Col. Address Buffer
Vcc
Vss
VBB Generator
Lower
Data in
Buffer
Row Decoder
Refresh Control
• Performance Range
Speed
Control
Clocks
Memory Array
4,194,304 x 16
Cells
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
Sense Amps & I/O
Part
NO.
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
K4F661612B,K4F641612B
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4F661612B-T
• K4F641612B-T
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
VCC
W
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
VSS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A7
A6
VSS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
Pin function
A0 - A12
Address Inputs(8K Product)
A0 - A11
Address Inputs(4K Product)
DQ0 - 15
Data In/Out
VSS
Ground
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
VCC
Power(+3.3V)
N.C
No Connection
K4F661612B,K4F641612B
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
VIN,VOUT
-0.5 to +6.5
V
Voltage on V CC supply relative to VSS
VCC
-0.5 to +4.6
V
Storage Temperature
Tstg
-55 to +150
°C
PD
1
W
IOS Address
50
mA
Voltage on any pin relative to VSS
Power Dissipation
Short Circuit Output Current
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)
Symbol
Min
Typ
Max
Units
Supply Voltage
Parameter
VCC
3.0
3.3
3.6
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.0
-
+5.5*1
V
Input Low Voltage
VIL
-0.3 *2
-
0.8
V
*1 : 6.5V at pulse width ≤15ns which is measured at VCC
*2 : -1.3 at pulse width ≤15ns which is measured at VSS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0≤VIN≤VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V≤VOUT ≤VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH =-2mA)
VOH
2.4
-
V
Output Low Voltage Level(I OL=2mA)
VOL
-
0.4
V
K4F661612B,K4F641612B
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Continued)
Symbol
Power
Speed
ICC1
Don′t care
ICC2
Max
Units
K4F661612B
K4F641612B
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
Normal
L
Don′t care
2
2
2
2
mA
mA
ICC3
Don′t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
ICC4
Don′t care
-45
-50
-60
70
60
50
80
70
60
mA
mA
mA
ICC5
Normal
L
Don′t care
500
300
500
300
uA
uA
ICC6
Don′t care
-45
-50
-60
100
90
80
130
120
110
mA
mA
mA
ICC7
L
Don′t care
400
400
uA
ICCS
L
Don′t care
400
400
uA
ICC1* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=UCAS=LCAS=W=VIH)
ICC3* : RAS-only Refresh Current (UCAS=LCAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, UCAS or LCAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=UCAS=LCAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH )=VCC-0.2V, Input low voltage(VIL)=0.2V, UCAS, LCAS=CAS-before-RAS cycling or 0.2V,
W, OE=V IH, Address=Don′t care DQ=Open, TRC=31.25us
ICCS : Self Refresh Current
RAS=UCAS=LCAS=0.2V, W=OE=A0 ~ A12(A11)=VCC-0.2V or 0.2V, DQ0 ~ DQ15=V CC-0.2V, 0.2V or Open
*Note :
ICC1 , ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1, ICC3 and ICC6, address can be changed maximum once while RAS=V IL. In I CC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
K4F661612B,K4F641612B
CMOS DRAM
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A12]
CIN1
-
5
pF
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
-
7
pF
Output capacitance [DQ0 - DQ15]
C DQ
-
7
pF
AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
-45
Symbol
Min
Random read or write cycle time
tRC
Read-modify-write cycle time
tRWC
-50
Max
Min
-60
Max
Min
Units
Note
Max
80
90
110
ns
115
133
153
ns
Access time from RAS
tRAC
45
50
60
ns
3,4,10
Access time from CAS
tCAC
12
13
15
ns
3,4,5
Access time from column address
tAA
23
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
0
ns
3
Output buffer turn-off delay
tOFF
0
13
0
13
0
13
ns
6
Transition time (rise and fall)
tT
1
50
1
50
1
50
ns
2
RAS precharge time
tRP
25
RAS pulse width
tRAS
45
RAS hold time
tRSH
12
13
15
ns
CAS hold time
tCSH
45
50
60
ns
CAS pulse width
0
0
30
10K
50
40
10K
60
ns
10K
ns
tCAS
12
10K
13
10K
15
10K
ns
RAS to CAS delay time
tRCD
18
33
20
37
20
45
ns
4
RAS to column address delay time
tRAD
13
22
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
Row address set-up time
tASR
0
0
0
ns
Row address hold time
tRAH
8
10
10
ns
Column address set-up time
tASC
0
0
0
ns
13
Column address hold time
tCAH
8
10
10
ns
13
Column address to RAS lead time
tRAL
23
25
30
ns
Read command set-up time
tRCS
0
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
0
ns
8
Write command hold time
tWCH
8
10
10
ns
Write command pulse width
tWP
8
10
10
ns
5
5
ns
Write command to RAS lead time
tRWL
13
15
15
ns
Write command to CAS lead time
tCWL
12
13
15
ns
16
Data set-up time
tDS
0
0
0
ns
9,19
Data hold time
tDH
10
10
10
ns
9,19
K4F661612B,K4F641612B
CMOS DRAM
AC CHARACTERISTICS (Continued)
Parameter
-45
Symbol
Min
-50
Max
Min
-60
Max
Min
Units
Note
Max
Refresh period (Normal)
tREF
Refresh period (L-ver)
tREF
Write command set-up time
tWCS
0
0
0
ns
7
64
64
128
128
64
ms
128
ms
CAS to W delay time
tCWD
32
36
38
ns
7,15
RAS to W delay time
tRWD
67
73
83
ns
7
Column address to W delay time
tAWD
43
48
53
ns
7
CAS precharge W delay time
tCPWD
48
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
5
ns
Access time from CAS precharge
tCPA
Fast Page mode cycle time
tPC
31
Fast Page mode read-modify-write cycle time
tPRWC
70
76
85
ns
CAS precharge time (Fast page cycle)
tCP
9
10
10
ns
26
30
35
35
40
ns
3
ns
14
RAS pulse width (Fast page cycle)
tRASP
45
RAS hold time from CAS precharge
tRHCP
28
OE access time
tOEA
OE to data delay
tOED
12
tOEZ
0
OE command hold time
tOEH
12
13
15
ns
Write command set-up time (Test mode in)
tWTS
10
10
10
ns
11
Write command hold time (Test mode in)
tWTH
15
15
15
ns
11
W to RAS precharge time (C-B-R refresh)
tWRP
10
10
10
ns
W to RAS hold time (C-B-R refresh)
tWRH
10
10
10
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
20,21,22
RAS precharge time (C-B-R self refresh)
tRPS
80
90
110
ns
20,21,22
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
20,21,22
Output buffer turn off delay time from OE
200K
50
200K
30
12
13
0
200K
ns
15
ns
35
13
13
60
ns
13
13
0
ns
13
ns
6
K4F661612B,K4F641612B
CMOS DRAM
TEST MODE CYCLE
Parameter
( Note 11 )
-45
Symbol
Min
-50
Max
Min
-60
Max
Min
Units
Note
Max
Random read or write cycle time
tRC
85
95
115
ns
Read-modify-write cycle time
tRWC
120
138
160
ns
Access time from RAS
tRAC
50
55
65
ns
3,4,10,12
Access time from CAS
tCAC
17
18
20
ns
3,4,5,12
Access time from column address
tAA
28
30
35
ns
3,10,12
RAS pulse width
tRAS
50
10K
55
10K
65
10K
ns
CAS pulse width
tCAS
17
10K
18
10K
20
10K
ns
RAS hold time
tRSH
17
18
20
ns
CAS hold time
tCSH
50
55
65
ns
Column Address to RAS lead time
tRAL
28
30
35
ns
CAS to W delay time
tCWD
37
41
43
ns
7
RAS to W delay time
tRWD
72
78
88
ns
7
Column Address to W delay time
tAWD
48
53
58
ns
7
Fast Page mode cycle time
tPC
36
40
45
ns
Fast Page mode read-modify-write cycle time
tPRWC
75
RAS pulse width (Fast page cycle)
tRASP
50
81
Access time from CAS precharge
tCPA
31
OE access time
tOEA
17
OE to data delay
tOED
17
18
18
ns
OE command hold time
tOEH
17
18
20
ns
200K
55
90
200K
65
ns
200K
ns
35
40
ns
18
20
ns
3
K4F661612B,K4F641612B
CMOS DRAM
NOTES
1. An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles
before proper device operation is achieved.
2. VIH(min) and V IL(max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and V IL(max) and are assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 1 TTL load and 100pF.
4. Operation within the tRCD(max) limit insures that tRAC (max) can be met, tRCD(max) is specified as a reference point only.
If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5. Assumes that tRCD≥tRCD(max).
6. tOFF(min)and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced V oh
or Vol.
7. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS≥tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the
duration of the cycle. If tCWD≥tCWD(min), tRWD≥tRWD(min) and tAWD ≥tAWD(min), then the cycle is a read-modify-write cycle
and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the
condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles.
Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD (max) is specified as a reference point only.
10. If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA.
These specifications are applied in the test mode.
11. In test mode read cycle, the value of tRAC , tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters
12. should be specified in test mode cycles by adding the above value to the specified value in this data sheet.
K4F64(6)1612B Truth Table
RAS
LCAS
UCAS
W
OE
DQ0 - DQ7
DQ8-DQ15
STATE
H
X
X
X
X
Hi-Z
Hi-Z
Standby
L
H
H
X
X
Hi-Z
Hi-Z
Refresh
L
L
H
H
L
DQ-OUT
Hi-Z
Byte Read
L
H
L
H
L
Hi-Z
DQ-OUT
Byte Read
L
L
L
H
L
DQ-OUT
DQ-OUT
Word Read
L
L
H
L
H
DQ-IN
-
Byte Write
L
H
L
L
H
-
DQ-IN
Byte Write
L
L
L
L
H
DQ-IN
DQ-IN
Word Write
L
L
L
H
H
Hi-Z
Hi-Z
-
K4F661612B,K4F641612B
CMOS DRAM
13. tASC, tCAH are referenced to the earlier CAS falling edge.
14. tCP is specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle.
15. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle.
16. tCWL is specified from W falling edge to the earlier CAS rising edge.
17. tCSR is referenced to the earlier CAS falling edge before RAS transition low.
18. tCHR is referenced to the later CAS rising edge after RAS transition low.
RAS
LCAS
UCAS
tCSR
tCHR
19. tDS is specified for the earlier CAS falling edge and tDH is specified by the later CAS falling edge.
LCAS
UCAS
tDS
DQ0 ~ DQ15
tDH
Din
20. If tRASS≥100us, then RAS precharge time must use tRPS instead of tRP.
21. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K/8K) cycles of burst refresh must be executed within
64ms before and after self refresh, in order to meet refresh specification.
22. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS should be executed with in 15.6us immediately before
and after self refresh in order to meet refresh specification.
K4F661612B,K4F641612B
CMOS DRAM
WORD READ CYCLE
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
VIH -
tRSH
tCAS
tCRP
tRSH
tCRP
VIL -
tCSH
tCRP
LCAS
tRP
VIH -
tRCD
VIH -
tCAS
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tAA
OE
VIH -
tOEA
VIL -
DQ0 ~ DQ7
VOH VOL -
tRAC
tCAC
tCLZ
OPEN
tOFF
tOEZ
DATA-OUT
tOFF
tCAC
DQ8 ~ DQ15
VOH VOL -
tRAC
OPEN
tCLZ
tOEZ
DATA-OUT
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
tRC
tRAS
RAS
tRP
VIH VIL -
tCRP
UCAS
tRPC
VIH VIL -
tCSH
tCRP
LCAS
tRSH
tCAS
VIH VIL -
tRAD
tASR
A
tRCD
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tRAL
tCAH
COLUMN
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tOFF
tAA
OE
VIH -
tOEA
VIL -
DQ0 ~ DQ7
VOH VOL DQ8 ~ DQ15
VOH VOL -
tOEZ
tRAC
tCAC
tCLZ
OPEN
DATA-OUT
OPEN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
UPPER BYTE READ CYCLE
NOTE : DIN = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRP
VIH -
tRCD
tCRP
tRSH
tCAS
VIH VIL -
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tRAL
tASR
A
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tRCH
tRCS
W
tRRH
VIH VIL -
tOFF
tAA
OE
VIH -
tOEA
VIL -
DQ0 ~ DQ7
VOH -
OPEN
VOL DQ8 ~ DQ15
VOH VOL -
tOEZ
tCAC
tRAC
OPEN
tCLZ
DATA-OUT
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tCSH
tCRP
LCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH -
tDS
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
DATA-IN
VIL -
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
tRP
VIH VIL -
tCRP
UCAS
tRPC
VIH VIL -
tCSH
tCRP
LCAS
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
tDS
tDH
DATA-IN
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRAS
RAS
VIL -
tCSH
tRCD
tCRP
tRSH
VIH -
tCAS
VIL -
tCRP
LCAS
tRP
VIH -
tCRP
UCAS
tRC
tRPC
VIH VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
DQ8 ~ DQ15
VIH VIL -
tDS
tDH
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
WORD WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tCSH
tCRP
LCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
tCAH
COLUMN
ADDRESS
ROW
ADDRESS
tCWL
tRWL
W
OE
VIH -
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH -
tOEH
tOED
tDS
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
DATA-IN
VIL -
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : DOUT = OPEN
tRC
tRAS
RAS
VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCSH
tCRP
LCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCRP
tCAS
VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tCWL
tRWL
W
OE
VIH -
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH VIL -
tOEH
tOED
tDS
tDH
DATA-IN
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )
NOTE : D OUT = OPEN
tRC
tRAS
RAS
VIL -
tCSH
tCRP
UCAS
tRP
VIH -
tRCD
VIH -
tCAS
VIL -
tCRP
LCAS
tCRP
tRSH
tRPC
VIH VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tRAL
tASC
ROW
ADDRESS
tCAH
COLUMN
ADDRESS
tCWL
W
OE
tRWL
VIH -
tWP
VIL -
VIH VIL -
tOEH
tOED
DQ0 ~ DQ7
VIH VIL -
DQ8 ~ DQ15
VIH VIL -
tDS
tDH
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
WORD READ - MODIFY - WRITE CYCLE
tRWC
tRAS
RAS
VIL -
tCRP
UCAS
tRCD
tRSH
VIH -
tCAS
VIL -
tCRP
LCAS
tRP
VIH -
tRCD
tRSH
VIH -
tCAS
VIL -
tRAD
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tRWL
tAWD
tCWL
tCWD
W
OE
VIH -
tWP
VIL -
tRWD
tOEA
VIH VIL -
tCLZ
tCAC
tAA
DQ0 ~ DQ7
VI/OH -
tRAC
tOED
tOEZ
VALID
DATA-OUT
VI/OL -
tDS
tDH
VALID
DATA-IN
tCLZ
tCAC
DQ8 ~ DQ15
VI/OH VI/OL -
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
LOWER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRAS
RAS
tRP
VIH VIL -
tRPC
tCRP
UCAS
VIH VIL -
tCRP
LCAS
tRCD
tRSH
VIH -
tCAS
VIL -
tRAD
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tRWL
tAWD
tCWD
W
OE
tCWL
VIH -
tWP
VIL -
tRWD
tOEA
VIH VIL -
tCLZ
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL DQ8 ~ DQ15
VI/OH VI/OL -
tOED
tOEZ
tRAC
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
OPEN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
UPPER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRP
tRAS
RAS
VIH VIL -
tCRP
UCAS
tRCD
tRSH
VIH -
tCAS
VIL -
tCRP
LCAS
VIH VIL -
tRAD
tASR
A
tRPC
VIH VIL -
tRAH
ROW
ADDR
tASC
tCSH
tCAH
COLUMN
ADDRESS
tRWL
tAWD
tCWL
tCWD
W
OE
VIH -
tWP
VIL -
tRWD
tOEA
VIH VIL -
DQ0 ~ DQ7
VI/OH -
OPEN
VI/OL -
tCLZ
tCAC
DQ8 ~ DQ15
VI/OH VI/OL -
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS
tDH
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE WORD READ CYCLE
tRP
tRASP
RAS
VIH VIL -
¡ó
tRHCP
tCSH
tPC
tCRP
tRCD
UCAS
tPC
tCP
tCAS
VIH -
tPC
tCP
tCAS
tCP
tCAS
tRPC
tCAS
VIL -
tRAL
tCRP
tCP
tRCD
LCAS
tASR
A
tCAS
VIH VIL -
VIH VIL -
tRAD
tRAH tASC
ROW
ADDR
tCAH
tCAS
tASC
tRCH
tCP
tCAS
tCAH
tASC
COLUMN
ADDRESS
COLUMN
ADDRESS
tRCS
W
tCP
tCAH
tCAH
COLUMN
ADDRESS
tRCS
tRCH
tRCS
tRRH
tRCH
VIH VIL -
tCAC
tAA
OE
tASC
COLUMN
ADDR
tRCS
tRCH
tRPC
tCAS
tOEA
VIH -
tCAC
tAA
tAA
tCPA
tCPA
tOEA
tCAC
tAA
tCPA
tOEA
tOEA
VIL -
tCAC
DQ0 ~ DQ7
VOH -
tRAC
tOFF
tOFF
tOEZ
tOEZ
tOEZ
VALID
DATA-OUT
VOL -
DQ8 ~ DQ15
VOH -
tOFF
VALID
DATA-OUT
VALID
DATA-OUT
tOFF
tOFF
tOFF
tRAC
tOEZ
tOEZ
tOEZ
VOL -
VALID
DATA-OUT
VALID
DATA-OUT
tOEZ
VALID
DATA-OUT
tCLZ
tCAC
VALID
DATA-OUT
tOFF
tOFF
tOEZ
VALID
DATA-OUT
tCLZ
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE LOWER BYTE READ CYCLE
tRASP
RAS
tRP
VIH VIL -
¡ó
tRHCP
tCRP
UCAS
tRPC
VIH VIL -
tPC
tCRP
LCAS
tPC
tCP
tCAS
tCP
tCAS
tCAS
VIH VIL -
tRAD
tRAH tASC tCAH
ROW
ADDR
tASC tCAH
tASC
COLUMN
ADDRESS
COLUMN
ADDRESS
tCAH
tRCS
tRCH
tASC
COLUMN
ADDR
tCAH
COLUMN
ADDRESS
tRCS
tRCH
tRCH
tRCS
tRRH
tRCH
VIH VIL -
tCAC
tCAC
tAA
OE
tRPC
tCAS
VIL -
tRCS
W
tPC
tCP
tRCD
VIH -
tASR
A
tRAL
tCSH
tAA
tOEA
VIH -
tCAC
tAA
tAA
tCPA
tOEA
tCPA
tOEA
tCPA
tOEA
tOFF
tOEZ
tOFF
tOEZ
VIL -
DQ0 ~ DQ7
VOH -
tCAC
tRAC
VALID
DATA-OUT
VOL -
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tCLZ
DQ8 ~ DQ15
VOH VOL -
OPEN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE UPPER BYTE READ CYCLE
tRP
tRASP
RAS
VIH VIL -
¡ó
tCSH
tCRP
UCAS
tRHCP
tPC
tRCD
tCP
tCAS
VIH -
tPC
tPC
tCP
tCAS
tCP
tCAS
tRPC
tCAS
VIL -
tCRP
LCAS
tRPC
VIH -
tRAL
VIL -
tRAD
tASR
A
VIH VIL -
tRAH tASC
ROW
ADDR
tCAH
COLUMN
ADDRESS
tCAH
tASC
COLUMN
ADDRESS
tCAH
tRCH
tCAH
COLUMN
ADDRESS
tRCS
tRCH
tRCH
tRCS
tRRH
tRCH
VIH VIL -
tCAC
OE
tASC
COLUMN
ADDR
tRCS
tRCS
W
tASC
tAA
tCPA
tOEA
tAA
tOEA
VIH -
tCAC
tAA
tCPA
tOEA
tCAC
tAA
tCPA
tOEA
VIL -
DQ0 ~ DQ7
VOH -
OPEN
VOL -
DQ8 ~ DQ15
VOH -
tCAC
tRAC
tOFF
tOEZ
VALID
DATA-OUT
VOL -
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tCLZ
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : D OUT = OPEN
tRASP
RAS
tRHCP
VIL -
¡ó
tPC
tCRP
UCAS
tRCD
tPC
tCP
VIH -
tRSH
tCP
tCAS
tCRP
tCAS
VIL -
tCAS
¡ó
tPC
tCRP
LCAS
tRP
VIH -
tCP
tRCD
VIH -
tRSH
tPC
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tASC
tWCH
tCAH
COLUMN
ADDRESS
tWCS
tWP
tASC
¡ó
¡ó
tWCH
tWP
tCAH
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
VIH -
¡ó
VIL -
¡ó
DQ0 ~ DQ7
VIH -
tDS
VIL -
tDS
tDH
tDS
tDH
¡ó
VALID
DATA-IN
VIL -
DQ8 ~ DQ15
VIH -
tDH
tDS
tDH
VALID
DATA-IN
tDS
¡ó
tDH
VALID
DATA-IN
tDS
tDH
¡ó
VALID
DATA-IN
VALID
DATA-IN
¡ó
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
RAS
tRP
VIH -
tRHCP
VIL -
¡ó
tRPC
tCRP
UCAS
¡ó
VIH VIL -
tPC
tCRP
LCAS
tRCD
tPC
tCP
VIH -
tRSH
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tWCS
W
OE
VIH -
tASC
tWCH
tCAH
COLUMN
ADDRESS
tWCS
tWP
tASC
¡ó
¡ó
tWCH
tWP
tCAH
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
VIH -
¡ó
VIL -
¡ó
DQ0 ~ DQ7
VIH VIL -
tDS
tDH
VALID
DATA-IN
tDS
tDH
VALID
DATA-IN
tDS
¡ó
tDH
VALID
DATA-IN
¡ó
DQ8 ~ DQ15
VIH VIL -
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
RAS
tRHCP
VIL -
¡ó
tPC
tCRP
UCAS
tRP
VIH -
tRCD
tPC
tCP
VIH -
tRSH
tCP
tCAS
tCAS
VIL -
tCAS
¡ó
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tRAL
tCSH
tASR
A
VIH VIL -
tRAH
ROW
ADDR.
tASC
tCAH
COLUMN
ADDRESS
tWCS
W
VIH -
tASC
tWCH
tCAH
COLUMN
ADDRESS
tWCS
tWP
tASC
¡ó
¡ó
tWCH
tWP
COLUMN
ADDRESS
tWCS
¡ó
tWCH
tWP
VIL -
VIH -
¡ó
VIL -
¡ó
DQ0 ~ DQ7
VIH -
¡ó
OE
tCAH
VIL -
DQ8 ~ DQ15
VIH VIL -
¡ó
tDS
tDH
tDS
tDH
tDS
tDH
¡ó
VALID
DATA-IN
VALID
DATA-IN
¡ó
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE
tRP
tRASP
RAS
VIH -
tCSH
VIL -
tCRP
UCAS
tRSH
tCRP
tCP
VIH -
tCAS
tCAS
VIL -
tCRP
LCAS
tPRWC
tRCD
tRCD
tCRP
tCP
VIH -
tCAS
tCAS
VIL -
tRAD
tRAH
tASR
A
VIH VIL -
tRAL
tCAH
tCAH
tASC
tASC
ROW
ADDR
COL.
ADDR
COL.
ADDR
tRWL
tCWL
tRCS
tCWL
W
OE
tRCS
VIH -
tWP
VIL -
tWP
tCWD
tAWD
tRWD
VIH -
tCWD
tAWD
tCPWD
tOEA
tOEA
VIL -
tOED
tCAC
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL -
tDS
tRAC
tCLZ
VALID
DATA-IN
tOED
tAA
tRAC
tOEZ
VALID
DATA-OUT
tCAC
tCAC
VI/OL -
tDS
tOEZ
tCLZ
VALID
DATA-OUT
DQ8 ~ DQ15
VI/OH -
tDH
tAA
tDH
tOEZ
tOED
tDH
tCLZ
tOED
tDH
tAA
tDS
VALID
DATA-IN
tDS
tOEZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE
tRP
tRASP
RAS
tCSH
VIH VIL -
tCRP
UCAS
VIH VIL -
tCRP
LCAS
tRPC
tPRWC
tRCD
VIH -
tRSH
tCP
tCAS
VIL -
tRAD
tRAH
tASR
A
VIH VIL -
tRAL
tCAH
OE
tCAH
tASC
tASC
COL.
ADDR
ROW
ADDR
COL.
ADDR
tRCS
W
tCRP
tCAS
tCWL
VIH -
tWP
VIL -
tWP
tCWD
tAWD
tRWD
VIH -
tCWD
tAWD
tCPWD
tOEA
tOEA
VIL -
tOED
tCAC
tCAC
tAA
DQ0 ~ DQ7
VI/OH VI/OL -
tRAC
tOEZ
tDH
VI/OL -
tOED
tDH
tAA
tDS
tDS
tOEZ
tCLZ
tCLZ
VALID
DATA-OUT
DQ8 ~ DQ15
VI/OH -
tRWL
tCWL
tRCS
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
OPEN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
tRP
tRASP
RAS
tCSH
VIH VIL -
tCRP
UCAS
tPRWC
tRCD
VIH -
tRSH
tCP
tCAS
tCRP
tCAS
VIL -
tRPC
tCRP
LCAS
VIH VIL -
tRAD
tRAH
tASR
A
VIH VIL -
tRAL
tCAH
tASC
tASC
COL.
ADDR
ROW
ADDR
COL.
ADDR
tRCS
W
OE
tCAH
tCWL
tRWL
tCWL
tRCS
tWP
VIH VIL -
tWP
tCWD
tAWD
tRWD
VIH -
tCWD
tAWD
tCPWD
tOEA
tOEA
VIL -
DQ0 ~ DQ7
VI/OH -
OPEN
VI/OL -
tOED
tOED
tCAC
tAA
DQ8 ~ DQ15
VI/OH VI/OL -
tRAC
tCAC
tDH
tOEZ
tAA
tDS
tDH
tOEZ
tDS
tCLZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
RAS - ONLY REFRESH CYCLE
NOTE : W, OE , DIN = Don′t care
D OUT = OPEN
tRC
VIH -
RAS
tRP
tRAS
VIL -
tRPC
tCRP
VIH -
UCAS
VIL -
tCRP
VIH -
LCAS
VIL -
tASR
VIH -
A
VIL -
tRAH
ROW
ADDR
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE , A = Don′t care
tRC
tRP
VIH -
RAS
VIL -
tRP
tRAS
tCRP
tRPC
tCP
UCAS
tCSR
VIH -
tCHR
VIL -
tCP
LCAS
tCSR
VIH -
tCHR
VIL -
DQ0 ~ DQ7
VOH -
tOFF
OPEN
VOL DQ8 ~ DQ15
VOH VOL -
W
OPEN
tWRP
tWRH
VIH VIL Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
HIDDEN REFRESH CYCLE ( READ )
tRC
RAS
tRAS
VIH -
tRSH
tCHR
tRCD
tRSH
tCHR
VIL -
VIH VIL -
tRAD
tASR
A
tRCD
VIH -
tCRP
LCAS
VIH VIL -
tRAH
tRAL
tASC
tCAH
ROW
ADDRESS
COLUMN
ADDRESS
tWRH
tRCS
W
tRP
tRAS
VIL -
tCRP
UCAS
tRC
tRP
VIH VIL -
tAA
OE
VIH -
tOEA
VIL -
tOFF
tCAC
tCLZ
DQ0 ~ DQ7
VOH VOL -
DQ8 ~ DQ15
VOH VOL -
tRAC
tOEZ
OPEN
DATA-OUT
OPEN
DATA-IN
DATA-OUT
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
tRC
RAS
VIL -
tRCD
tRSH
tCHR
tRCD
tRSH
tCHR
VIH VIL -
tCRP
LCAS
tRP
tRAS
tRAS
VIH -
tCRP
UCAS
tRC
tRP
VIH VIL -
tRAD
tASR
A
VIH VIL -
tRAH
tASC
ROW
ADDRESS
tRAL
tCAH
COLUMN
ADDRESS
tWRH
W
OE
VIH -
tWRP
tWCS
tWCH
tWP
VIL -
VIH VIL -
DQ0 ~ DQ7
VIH -
tDS
DATA-IN
VIL DQ8 ~ DQ15
VIH VIL -
tDH
tDS
tDH
DATA-IN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE , A = Don′t care
tRP
tRASS
tRPS
VIH -
RAS
VIL -
tRPC
tRPC
tCP
UCAS
VIH -
tCSR
tCHS
tCSR
tCHS
VIL -
tCP
VIH -
LCAS
VIL -
DQ0 ~ DQ7
VOH -
tOFF
OPEN
VOL DQ8 ~ DQ15
VOH -
OPEN
VOL -
tWRP
tWRH
VIH -
W
VIL -
TEST MODE IN CYCLE
NOTE : OE , A = Don′t care
tRC
tRP
RAS
tRP
tRAS
VIH VIL -
tCRP
tRPC
tCP
UCAS
tCSR
VIH -
tCP
LCAS
W
tCHR
VIL VIH -
tCSR
tCHR
VIL -
tWTS
VIH -
tWTH
VIL -
DQ0 ~ DQ15
VOH VOL -
tOFF
OPEN
Don′t care
Undefined
K4F661612B,K4F641612B
CMOS DRAM
PACKAGE DIMENSION
50 TSOP(II) 400mil
0.400 (10.16)
0.455 (11.56)
0.471 (11.96)
Units : Inches (millimeters)
0.004 (0.10)
0.010 (0.25)
0.841 (21.35)
MAX
0.821 (20.85)
0.829 (21.05)
0.034 (0.875)
0.0315 (0.80)
0.047 (1.20)
MAX
0.002 (0.05)
MIN
0.010 (0.25)
0.018 (0.45)
0.010 (0.25)
TYP
0.018 (0.45)
0.030 (0.75)
0~8
O
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