Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit (typ. 25 ns) • DIL-Plastikbauform mit hoher Packungsdichte • Especially suitable for applications from 350 nm to 1100 nm • Short switching time (typ. 25 ns) • DIL plastic package with high packing density Anwendungen Applications • Lichtschranken für Gleich- und Wechsellichtbetrieb im sichtbaren Lichtbereich • Industrieelektronik • „Messen/Steuern/Regeln“ • Photointerrupters • Industrial electronics • For control and drive circuits Typ Type Bestellnummer Ordering Code BPW 34 B Q62702-P945 BPW 34 BS Q62702-P1601 2002-01-24 1 BPW 34 B, BPW 34 BS Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 85 °C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 75 nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 350 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.45 mm2 2.73 × 2.73 mm × mm Abmessung der bestrahlungsempfindlichen Fläche L × B L×W Dimensions of radiant sensitive area Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit, λ = 400 nm Spectral sensitivity Sλ 0.2 A/W Quantenausbeute, λ = 400 nm Quantum yield η 0.62 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 390 mV 2002-01-24 2 BPW 34 B, BPW 34 BS Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kurzschlußstrom Short-circuit current Ee = 0.5 mW/cm2, λ = 400 nm ISC 7.4 (≥ 5.4) µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 25 ns Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 400 nm NEP 1.3 × 10– 13 Nachweisgrenze, VR = 10 V, λ = 400 nm Detection limit D* 2.1 × 1012 2002-01-24 3 W -----------Hz cm × Hz -------------------------W BPW 34 B, BPW 34 B Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f (λ) OHF01001 100 ΙP S rel % 80 OHF01066 10 3 µA 10 4 mV VO 10 2 10 3 VO OHF00958 160 mW Ptot 140 120 100 60 10 1 Total Power Dissipation Ptot = f (TA) 10 2 ΙP 40 80 60 10 0 10 1 -1 0 40 20 20 10 0 400 600 Dark Current IR = f (VR), E = 0 10 10 3 lx 10 4 EV 10 2 Capacitance OHF00080 OHF00081 100 C pA 0 0 20 40 60 80 ˚C 100 TA Dark Current IR = f (TA), VR = 5 V, E = 0 C = f (VR), f = 1 MHz, E = 0 4000 ΙR 10 1 10 0 1000 nm 1200 λ 800 OHF00082 10 3 Ι R nA pF 80 10 2 3000 70 60 2000 10 1 50 40 30 10 0 1000 20 10 0 0 5 10 15 V VR 0 -2 10 20 10 -1 10 0 10 1 V 10 2 VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2002-01-24 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 -1 0 20 40 60 80 ˚C 100 TA BPW 34 B, BPW 34 BS Maßzeichnung Package Outlines BPW 34 B 5.4 (0.213) 4.3 (0.169) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 3.7 (0.146) 3.5 (0.138) 3.0 (0.118) 1.2 (0.047) 0.7 (0.028) 0.8 (0.031) 0.6 (0.024) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 BS 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...5 ˚ 1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) Chip position 0.9 (0.035) 0.7 (0.028) 1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-01-24 5 BPW 34 B, BPW 34 BS Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-01-24 6