ASI ASI10700 Vhf power mosfet channel enhancement mode Datasheet

VFT150-28
VHF POWER MOSFET
N-Channel Enhancement Mode
DESCRIPTION:
The VFT150-28 is Designed for General
Purpose Class B Power Amplifier
Applications up to 175 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
S
FULL R
FEATURES:
D
Ø.125 NOM.
C
• PG = 10 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
B
E
S
G
D
G
H
F
I J
MAXIMUM RATINGS
MINIMUM
DIM
K
MAXIMUM
inches / mm
inches / mm
.220 / 5.59
.230 / 5.84
ID
16 A
VDSS
65 V
B
C
.245 / 6.22
.255 / 6.48
VGS
±40 V
D
.720 / 18.28
.7.30 / 18.54
PDISS
A
300 W @ TC = 25 C
T STG
-65 OC to +150 OC
θ JC
0.6 OC/W
CHARACTERISTICS
.125 / 3.18
E
O
-65 OC to +200 OC
TJ
.125 / 3.18
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
L
ORDER CODE: ASI 10700
NONE
TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BV DSS
ID = 100 mA
IDSS
VDS = 28 V
VGS = 0 V
5.0
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
µA
ID = 100 mA
VDS = 10 V
1.0
5.0
V
ID = 5 A
VDS = 10 V
3500
VGS(th)
gfs
Ciss
Coss
Crss
VDS = 28 V
60
VGS = 0 V
PG
ηD
VDD = 28 V
ψ
VSWR = 10:1 AT ALL PHASE ANGLES
IDQ = 250 mA
V
mS
f = 1.0 MHz
Pout = 150 W
f = 175 MHz
8.5
50
375
190
25
pF
10
60
dB
%
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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