TI CD74HC166E High-speed cmos logic 8-bit parallel-in/serial-out shift register Datasheet

[ /Title
(CD74
HC166
,
CD74
HCT16
6)
/Subject
(High
Speed
CMOS
Logic
8-Bit
ParallelIn/Seri
CD54HC166, CD74HC166,
CD54HCT166, CD74HCT166
Data sheet acquired from Harris Semiconductor
SCHS157C
February 1998 - Revised October 2003
High-Speed CMOS Logic
8-Bit Parallel-In/Serial-Out Shift Register
Features
Description
• Buffered Inputs
The ’HC166 and ’HCT166 8-bit shift register is fabricated
with silicon gate CMOS technology. It possesses the low
power consumption of standard CMOS integrated circuits,
and can operate at speeds comparable to the equivalent low
power Schottky device.
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Wide Operating Temperature Range . . . -55oC to 125oC
The ’HCT166 is functionally and pin compatible with the
standard ’LS166.
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL
Logic ICs
The 166 is an 8-bit shift register that has fully synchronous
serial or parallel data entry selected by an active LOW Parallel
Enable (PE) input. When the PE is LOW one setup time before
the LOW-to-HIGH clock transition, parallel data is entered into
the register. When PE is HIGH, data is entered into the internal
bit position Q0 from Serial Data Input (DS), and the remaining
bits are shifted one place to the right (Q0 → Q1 → Q2, etc.)
with each positive-going clock transition. For expansion of the
register in parallel to serial converters, the Q7 output is connected to the DS input of the succeeding stage.
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
The clock input is a gated OR structure which allows one
input to be used as an active LOW Clock Enable (CE) input.
The pin assignment for the CP and CE inputs is arbitrary and
can be reversed for layout convenience. The LOW-to-HIGH
transition of CE input should only take place while the CP is
HIGH for predictable operation.
Pinout
CD54HC166, CD54HCT166
(CERDIP)
CD74HC166, CD74HCT166
(PDIP, SOIC)
TOP VIEW
A LOW on the Master Reset (MR) input overrides all other
inputs and clears the register asynchronously, forcing all bit
positions to a LOW state.
DS 1
16 VCC
D0 2
15 PE
D1 3
14 D7
D2 4
13 Q7
D3 5
12 D6
CD54HC166F3A
-55 to 125
16 Ld CERDIP
CE 6
11 D5
CD54HCT166F3A
-55 to 125
16 Ld CERDIP
CP 7
10 D4
GND 8
9 MR
Ordering Information
PART NUMBER
TEMP. RANGE (oC)
PACKAGE
CD74HC166E
-55 to 125
16 Ld PDIP
CD74HC166M
-55 to 125
16 Ld SOIC
CD74HC166MT
-55 to 125
16 Ld SOIC
CD74HC166M96
-55 to 125
16 Ld SOIC
CD74HCT166E
-55 to 125
16 Ld PDIP
CD74HCT166M
-55 to 125
16 Ld SOIC
CD74HCT166MT
-55 to 125
16 Ld SOIC
CD74HCT166M96
-55 to 125
16 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
1
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
Functional Diagram
D0 D1 D2 D3 D4 D5 D6 D7
PARALLEL ENABLE CIRCUIT
PE
D0
D7
DS
8 - REGISTERS
Q7
CP
CE
MR
TRUTH TABLE
INPUTS
INTERNAL
Q STATES
PARALLEL
MASTER
RESET
PARALLEL
ENABLE
CLOCK
ENABLE
CLOCK
SERIAL
D0 D7
Q0
Q1
OUTPUT
Q7
L
X
X
X
X
X
L
L
L
H
X
L
L
X
X
Q00
Q10
Q0
H
L
L
↑
X
a...h
a
b
h
H
H
L
↑
H
X
H
Q0n
Q6n
H
H
L
↑
L
X
L
Q0n
Q6n
H
X
H
↑
X
X
Q00
Q10
Q70
H= High Voltage Level
L= Low Voltage Level
X= Don’t Care
↑= Transition from Low to High Level
a...h = The level of steady-state input at inputs D0 thru D7, respectively.
Q00, Q10, Q70 = The level of Q0, Q1, or Q7, respectively, before the indicated steady-state input conditions were established.
Q0n, Q6n = The level of Q0 or Q6, respectively, before the most recent ↑ transition of the clock.
2
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±25mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC or IGND . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
73
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
PARAMETER
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
25oC
IO (mA) VCC (V)
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
-5.2
6
5.48
-
-
5.34
-
5.2
-
V
HC TYPES
High Level Output
Voltage
CMOS Loads
VOH
-
VIH or
VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
II
VCC or
GND
-
-
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
5.2
6
-
-
0.26
-
0.33
-
0.4
V
-
6
-
-
±0.1
-
±1
-
±1
µA
3
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
SYMBOL
VI (V)
ICC
VCC or
GND
0
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
Quiescent Device
Current
25oC
IO (mA) VCC (V)
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
6
-
-
8
-
80
-
160
µA
-
4.5 to
5.5
2
-
-
2
-
2
-
V
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
VIH or
VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
II
VCC to
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
∆ICC
(Note 2)
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
NOTE:
2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
DS, D0-D7
0.2
PE
0.35
CP, CE
0.5
MR
0.2
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
Prerequisite For Switching Specifications
25oC
PARAMETER
-40oC TO 85oC
-55oC TO 125oC
SYMBOL
VCC (V)
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
fMAX
2
6
-
5
-
4
-
MHz
4.5
30
-
25
-
20
-
MHz
6
35
-
29
-
23
-
MHz
HC TYPES
Clock Frequency
(Figure 1)
4
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
Prerequisite For Switching Specifications
(Continued)
25oC
PARAMETER
MR Pulse Width
(Figure 1)
-40oC TO 85oC
-55oC TO 125oC
SYMBOL
VCC (V)
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
tw
2
100
-
125
-
150
-
ns
4.5
20
-
25
-
30
-
ns
6
17
-
21
-
26
-
ns
2
80
-
100
-
120
-
ns
4.5
16
-
20
-
24
-
ns
Clock Pulse Width
(Figure 1)
tW
Set-up Time
Data and CE to Clock
(Figure 5)
tSU
6
14
-
17
-
20
-
ns
2
80
-
100
-
120
-
ns
4.5
16
-
20
-
24
-
ns
6
14
-
17
-
20
-
ns
2
1
-
1
-
1
-
ns
4.5
1
-
1
-
1
-
ns
6
1
-
1
-
1
-
ns
2
0
-
0
-
0
-
ns
4.5
0
-
0
-
0
-
ns
6
0
-
0
-
0
-
ns
2
145
-
180
-
220
-
ns
4.5
29
-
36
-
44
-
ns
6
25
-
31
-
38
-
ns
2
0
-
0
-
0
-
ns
4.5
0
-
0
-
0
-
ns
6
0
-
0
-
0
-
ns
fMAX
4.5
25
-
20
-
16
-
MHz
MR Pulse Width (Figure 2)
tw
4.5
35
-
44
-
53
-
ns
Clock Pulse Width (Figure 2)
tw
4.5
20
-
25
-
30
-
ns
Set-up Time Data and CE to
Clock (Figure 6)
tSU
4.5
16
-
20
-
24
-
ns
Hold Time Data to Clock
(Figure 6)
tH
4.5
0
-
0
-
0
-
ns
tREM
4.5
0
-
0
-
0
-
ns
Set-up Time PE to CP (Figure 6)
tSU
4.5
30
-
38
-
45
-
ns
Hold Time PE to CP or CE
(Figure 6)
tH
4.5
0
-
0
-
0
-
ns
Hold Time
Data to Clock
(Figure 5)
tH
Removal Time
MR to Clock
(Figure 5)
tREM
Set-up Time
PE to CP
(Figure 5)
tSU
Hold Time
PE to CP or CE
(Figure 5)
tH
HCT TYPES
Clock Frequency (Figure 2)
Removal Time MR to Clock
(Figure 6)
Switching Specifications
PARAMETER
HC TYPES
Propagation Delay,
Clock to Output (Figure 3)
Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
25oC
-40oC TO 85oC -55oC TO 125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
160
200
240
ns
4.5
-
32
40
48
ns
CL = 15pF
5
13
-
-
-
ns
CL = 50pF
6
-
27
34
41
ns
5
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
Switching Specifications
PARAMETER
Output Transition Time
(Figure 3)
Input tr, tf = 6ns (Continued)
SYMBOL
TEST
CONDITIONS
tTLH, tTHL
CL = 50pF
25oC
-40oC TO 85oC -55oC TO 125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
75
95
110
ns
4.5
-
15
19
22
ns
6
-
13
16
19
ns
2
-
160
200
240
ns
4.5
-
32
40
48
ns
Propagation Delay
MR to Output
(Figure 3)
tPHL
6
-
27
34
41
ns
Input Capacitance
CI
-
-
-
10
10
10
pF
Power Dissipation
Capacitance
(Notes 3, 4)
CPD
-
5
41
-
-
-
pF
HCT TYPES
Propagation Delay,
Clock to Output
(Figure 4)
CL = 50pF
tPLH, tPHL
CL = 50pF
4.5
-
40
50
60
ns
Output Transition Time
(Figure 4)
tTLH, tTHL
CL = 50pF
4.5
-
15
19
22
ns
Propagation Delay
MR to Output (Figure 4)
tPHL
CL = 50pF
4.5
-
40
50
60
ns
-
-
10
10
10
pF
Input Capacitance
CI
-
NOTES:
3. CPD is used to determine the dynamic power consumption, per gate.
4. PD = CPD VCC2fi + ∑ (CL VCC2 + fO) where fi = Input Frequency, fO = Output Frequency, CL = Output Load Capacitance, VCC = Supply
Voltage.
Test Circuits and Waveforms
tfCL
trCL
CLOCK
90%
10%
tWL + tWH =
I
tWL
50%
tfCL = 6ns
fCL
I
fCL
3V
VCC
50%
10%
tWL + tWH =
trCL = 6ns
CLOCK
50%
2.7V
0.3V
GND
1.3V
0.3V
tWL
tWH
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
1.3V
1.3V
GND
tWH
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 1. HC CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
FIGURE 2. HCT CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
6
CD54HC166, CD74HC166, CD54HCT166, CD74HCT166
Test Circuits and Waveforms
tr = 6ns
(Continued)
tf = 6ns
90%
50%
10%
INPUT
GND
tTLH
90%
INVERTING
OUTPUT
tPHL
FIGURE 3. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC
trCL
VCC
90%
GND
tH(H)
3V
2.7V
1.3V
0.3V
GND
tH(H)
tH(L)
VCC
DATA
INPUT
DATA
INPUT
50%
tH(L)
3V
1.3V
1.3V
1.3V
GND
tSU(H)
tSU(H)
tSU(L)
tTLH
90%
OUTPUT
tTHL
90%
50%
10%
tTLH
90%
1.3V
OUTPUT
tREM
3V
SET, RESET
OR PRESET
GND
tTHL
1.3V
10%
FIGURE 5. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
tPHL
1.3V
GND
IC
CL
50pF
GND
90%
tPLH
50%
IC
tSU(L)
tPHL
tPLH
tREM
VCC
SET, RESET
OR PRESET
tfCL
CLOCK
INPUT
50%
10%
tPLH
FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
tfCL
trCL
tTLH
1.3V
10%
tPLH
tPHL
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
3V
2.7V
1.3V
0.3V
INPUT
tTHL
CLOCK
INPUT
tf = 6ns
tr = 6ns
VCC
CL
50pF
FIGURE 6. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
7
PACKAGE OPTION ADDENDUM
www.ti.com
6-Dec-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
Lead/Ball Finish
MSL Peak Temp (3)
CD54HC166F3A
ACTIVE
CDIP
J
16
1
TBD
A42 SNPB
N / A for Pkg Type
CD54HCT166F3A
ACTIVE
CDIP
J
16
1
TBD
A42 SNPB
N / A for Pkg Type
CD74HC166E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC166EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC166M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC166M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC166M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC166ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC166MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC166MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT166EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT166M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT166MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
6-Dec-2006
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 2
IMPORTANT NOTICE
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