isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW12AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @TC=25℃ 34 W Tj Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.7 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW12AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0, L= 25mH VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICES Collector Cutoff Current VCE=VCES ;VBE= 0 VCE=VCES ;VBE= 0;TC=125℃ 1.0 3.0 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 35 hFE-2 DC Current Gain IC= 1A; VCE= 5V 10 35 450 UNIT V Switching Times; Resistive Load ton Turn-on Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 5A;IB1= -IB2= 1A 2 1.0 μs 4.0 μs 0.8 μs