EMZ7 / UMZ7N Transistors General purpose transistor (dual transistors) EMZ7 / UMZ7N z External dimensions (Unit : mm) 0.5 2.0 0.65 1.25 0to0.1 0.9 0.7 0.15 2.1 0.1Min. ROHM : EMT6 1.3 (3) (1) (6) (1) Each lead has same dimensions zStructure NPN / PNP epitaxial planar silicon transistor (2) (4) (5) (2) 1.2 1.6 0.2 (5) (6) 0.5 0.5 1.0 1.6 0.22 (3) (4) 0.65 UMZ7N EMZ7 0.13 zFeatures 1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. 5) Low VCE(sat) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z7 Abbreviated symbol : Z7 z Equivalent Circuit EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) z Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Tr1 Tr2 Unit Collector-base voltage VCBO 15 −15 Collector-emitter voltage VCEO 12 −12 V Emitter-base voltage VEBO 6 −6 V Collector current Collector power dissipation V IC 500 −500 mA ICP 1 −1 A PC 150(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 ∗1 120mW per element must not be exceeded. Rev.A 1/4 EMZ7 / UMZ7N Transistors z Electrical characteristics (Ta=25°C) Tr1 (NPN) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 15 − − V IC= 10µA Collector-emitter breakdown voltage BVCEO 12 − − V IC= 1mA Emitter-base breakdown voltage BVEBO 6 − − V IE= 10µA ICBO − − 0.1 µA VCB= 15V Parameter Collector cutoff current Conditions IEBO − − 0.1 µA VEB= 6V VCE(sat) − 90 250 mV IC/IB= 200mA /10mA hFE 270 − 680 − fT − 320 − MHz Cob − 7.5 − pF Emitter cutoff current Collector-emitter saturation voltage Unit DC current transfer ratio Transition frequency Output capacitance VCE/IC= 2V/10mA VCE= 2V, IC= −10mA, f= 100MHz VCB= 10V, IE= 0A, f= 1MHz Tr2 (PNP) Parameter Conditions Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −15 − − V IC= −10µA Collector-emitter breakdown voltage BVCEO −12 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −10µA ICBO − − −0.1 µA VCB= −15V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IEBO − − −0.1 µA VEB= −6V VCE(sat) − −100 −250 mV IC/IB= −200mA/−10mA hFE 270 − 680 − fT − 260 − MHz Cob − 6.5 − pF VCE/IC= −2V/−10mA VCE= −2V, IC= 10mA, f= 100MHz VCB= −10V, IE= 0A, f= 1MHz zPackaging specifications Taping Packaging type Code Part No. Basic ordering unit (pieces) TR T2R 3000 8000 − UMZ7N EMZ7 − Rev.A 2/4 EMZ7 / UMZ7N Transistors VCE=2V 1000 DC CURRENT GAIN : hFE 200 100 10 −40°C 25°C 20 25°C 50 5 −40°C 200 100 50 20 10 5 2 2 1 1 0 0.5 1.0 1.5 1 2 50 100 200 500 1000 500 200 100 50 20 IC/IB=50 10 20 10 5 2 1 2 5 10 20 50 100 200 5001000 IC/IB=20 5000 50 Ta=125°C 20 −40°C 25°C 10 5 2 1 1 500 50 100 200 5001000 500 200 VCE=2V Ta=25˚C Pulsed 200 100 1000 50 20 100 10 50 5 20 2 10 5 10 20 1000 25°C 125°C 2000 2 COLLECTOR CURRENT : IC(mA) Ta=−40°C 1 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.5 Base-emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR CURRENT : IC (mA) 1000 200 fT (MHZ) Ta=25°C BASE SATURATION VOLTAGE : VBE (sat) (mV) 10000 1000 IC/IB=20 500 Fig.2 DC current gain vs. collector current Fig.1 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 5 10 20 1000 COLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) 1 VCE=2V Ta=125°C 25°C 500 500 Ta = 1 COLLECTOR CURRENT : IC(mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) zElectrical characteristic curves Tr1 (NPN) 1 2 5 10 20 50 100 200 5001000 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage IE=0A f=1MHz Ta=25°C 500 200 100 50 Cib 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage Rev.A 3/4 EMZ7 / UMZ7N Transistors DC CURRENT GAIN : hFE Ta=25°C 200 100 Ta=125 ˚C 20 10 Ta= -40˚C 50 5 200 50 20 10 5 2 1 1 1.0 0.5 1.5 Ta= −40°C 100 2 0 1 2 BASE TO EMITTER VOLTAGE : VBE (V) 20 50 100 200 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 2 5 10 20 50 100 200 500 1000 IC/IB=20 5000 2000 Ta=25°C 1000 Ta= −40°C 500 Ta=125°C 200 100 50 20 10 Fig.11 Collector-emitter saturation voltage vs. collector current 1000 IC/IB=20 500 200 100 Ta=125°C 50 20 2 5 10 20 Ta= −40°C 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 1000 50 100 200 500 1000 Fig.12 Base-emitter saturation voltage vs. collector current VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 Ta=25°C Fig.10 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 500 1000 Fig.9 DC current gain vs. collector current BASER SATURATION VOLTAGE : VBE (sat) (mV) Ta=25°C 500 EMITTER INPUT CAPACITANCE : Cib(F) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 10 10000 1000 1 5 COLLECTOR CURRENT : IC (mA) Fig.8 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) VCE=2V Ta=125°C 500 TRANSITION FREQUENCY : fT (MHz) 1000 VCE=2V 500 Ta=25˚C COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Tr2 (PNP) 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.13 Gain bandwidth product vs. emitter current IE=0A 500 f=1MHz Ta=25°C 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.14 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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