APTGF50DH120T3G Asymmetrical - Bridge NPT IGBT Power Module 13 VCES = 1200V IC = 50A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies 14 Q1 CR1 CR3 18 22 7 23 8 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 19 Q4 CR2 CR4 4 3 29 30 31 15 32 16 R1 28 27 26 25 29 16 30 15 31 14 32 13 2 3 4 7 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 20 19 18 23 22 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 70 50 150 ±20 312 100A @ 1200V Unit V April, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF50DH120T3G – Rev 0 Symbol VCES APTGF50DH120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 250 500 3.7 Unit 6.5 100 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 5 Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Typ 3450 330 220 330 35 200 35 65 pF nC ns 320 30 35 65 ns 360 40 6.9 mJ 3.05 300 A Diode ratings and characteristics (CR2 & CR3) IF VF Maximum Reverse Leakage Current VR=1200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ Max 100 500 Tj = 125°C 60 2.5 3 1.8 Tj = 25°C 265 Tj = 125°C Tj = 25°C Tj = 125°C 350 560 2890 Unit V µA A 3 April, 2009 IRM Test Conditions V ns nC CR1 & CR4 are IGBT protection diodes only www.microsemi.com 2-7 APTGF50DH120T3G – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF50DH120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.4 0.9 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTGF50DH120T3G – Rev 0 28 17 1 April, 2009 SP3 Package outline (dimensions in mm) APTGF50DH120T3G Typical IGBT Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 120 TJ=25°C TJ=125°C 80 40 30 TJ=25°C 20 TJ=125°C 10 2 4 6 VCE, Collector to Emitter Voltage (V) 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge 250µs Pulse Test < 0.5% Duty cycle 200 VGE, Gate to Emitter Voltage (V) Transfer Characteristics 250 TJ=25°C 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) 4 18 VCE=240V IC = 50A TJ = 25°C 16 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 0 16 50 100 150 200 250 300 350 Gate Charge (nC) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 70 Ic, DC Collector Current (A) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 60 50 40 30 20 10 0 50 75 100 125 25 TJ, Junction Temperature (°C) 50 75 100 125 TC, Case Temperature (°C) 150 April, 2009 25 www.microsemi.com 4-7 APTGF50DH120T3G – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 40 Ic, Collector Current (A) Ic, Collector Current (A) 160 APTGF50DH120T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 VGE=15V, TJ=25°C 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 50 75 100 125 Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) 25 ICE, Collector to Emitter Current (A) 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 Eoff, 25A 0 TJ = 125°C 4 TJ = 25°C 2 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 Switching Energy Losses (mJ) 14 VCE = 600V VGE = 15V RG = 5Ω 6 0 Switching Energy Losses vs Gate Resistance 18 16 8 125 VCE = 600V VGE = 15V TJ= 125°C 125 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A 4 Eoff, 50A Eon, 25A 2 April, 2009 VCE = 600V RG = 5Ω 24 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 25 www.microsemi.com 50 75 100 TJ, Junction Temperature (°C) 125 5-7 APTGF50DH120T3G – Rev 0 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50DH120T3G IC, Collector Current (A) Cies 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 80 60 40 20 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.45 0.4 100 Cres 100 0.9 0.35 0.3 0.25 0.7 0.5 0.2 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 ZVS VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C 60 ZCS 40 20 Hard switching 0 10 20 30 40 50 IC, Collector Current (A) 60 April, 2009 0.15 www.microsemi.com 6-7 APTGF50DH120T3G – Rev 0 Thermal Impedance (°C/W) Reverse Bias Safe Operating Area 120 Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 APTGF50DH120T3G Typical diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) 125 100 TJ=125°C 50 TJ=25°C 25 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TJ=125°C VR=800V 300 120 A 200 60 A 30 A 100 0 0 3.5 200 TJ=125°C VR=800V 6 60 A 4 30 A 3 2 1 0 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 800 1000 1200 50 TJ=125°C VR=800V 40 120 A 60 A 30 A 30 20 10 0 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 400 Max. Average Forward Current vs. Case Temp. 100 Duty Cycle = 0.5 TJ=175°C 80 300 IF(AV) (A) C, Capacitance (pF) 120 A 5 600 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 7 400 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 200 100 60 40 April, 2009 75 400 20 0 0 1 10 100 VR, Reverse Voltage (V) 1000 25 50 75 100 125 150 175 Case Temperature (ºC) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTGF50DH120T3G – Rev 0 IF, Forward Current (A) 150