Diodes DMP3068L 30v p-channel enhancement mode mosfet Datasheet

DMP3068L
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCED INFORMATION
Product Summary
V(BR)DS
Features
S
ID max
TA = +25°C
Package
RDS(ON) max
-3.9A
72mΩ @ VGS = -10V
-30V
SOT-23
-3.6A
85mΩ @ VGS = -4.5V
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
•
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
•
Case: SOT23
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
performance, making it ideal for high-efficiency power management
applications.
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.006 grams (Approximate)
SOT23
D
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP3068L-7
DMP3068L-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT23
68 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
68
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMP3068L
Document number: DS37536 Rev. 2 - 2
Mar
3
2016
D
Apr
4
May
5
2017
E
Jun
6
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
January 2015
© Diodes Incorporated
DMP3068L
Maximum Ratings (@TA = +25°C unless otherwise specified.)
ADVANCED INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6) Vgs= -10V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
-30
±12
-3.3
-2.6
ID
A
-3.9
-3.2
-18
ID
Pulsed Drain Current (Pulse width ≤10µS, Duty Cycle ≤1%)
Units
V
V
IDM
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Symbol
PD
Steady State
t<10s
RθJA
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Value
0.7
182
133
1.2
103
75
-55 to +150
PD
Steady State
t<10s
RθJA
Operating and Storage Temperature Range
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
-30






-1
±100
V
µA
nA
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
-0.5

-1.3
V
RDS (ON)

57
64
80
107
72
85
120
165
mΩ
VSD


-1.2
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VGS = 0V, IS = -1.0A
Ciss
Coss
Crss
RG




708
57
47
14




pF
pF
pF
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
QG

7.3

nC
VDS = -15V, ID = -4A
QG
QGS
QGD
td(on)
tr
td(off)
tf







15.9
1.2
1.7
3.5
15.8
70.3
33.9







nC
VDS = -15V, ID = -4A
ns
VDS = -15V, VGS = -10V,
ID = -4A, RG = 6.0Ω
VDS = -15V, VGS = 0V, f = 1.0MHz
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP3068L
Document number: DS37536 Rev. 2 - 2
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January 2015
© Diodes Incorporated
DMP3068L
20
VGS = -10V
I D, DRAIN CURRENT (A)
T A = 125°C
VGS = -4.0V
14
VGS = -2.5V
12
10
8
VGS = -2.0V
6
TA = 25°C
15
T A = 85°C
T A = -55°C
10
5
4
2
VGS = -1.5V
0
1
2
3
4
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.15
VGS = -2.5V
0.1
VGS = -4.5V
VGS = -10V
0.05
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
0.25
I D = -4.2A
0.2
I D = -2.0A
0.15
0.1
0.05
20
0.15
0
0
2
4
6
8
10
12
V GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
VGS = -10V
1.8
RD S(ON ), DRAIN-SOURCE
ON-RES ISTANCE (NO RMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCED INFORMATION
16
T A = 150°C
VDS = -5.0V
VGS = -3.5V
ID, DRAIN CURRENT (A)
18
20
VGS = -3.0V
VGS = -4.5V
T A = 150°C
0.1
T A = 125°C
T A = 85°C
T A = 25°C
0.05
T A = -55°C
VGS = -4.5V
1.6
I D = -4.0A
1.4
1.2
VGS = -2.5V
ID = -2.0A
1
0.8
0.6
0
0
5
10
15
ID , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP3068L
Document number: DS37536 Rev. 2 - 2
20
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0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Figure 6 On-Resistance Variation with Temperature
January 2015
© Diodes Incorporated
1.5
VG S(TH), GATE THRESHOL D VOLTA GE (V)
R DS(on ), DRAIN-SOURCE ON-RESI STANCE (Ω )
(No rma lize d)
0.2
0.15
VGS = -2.5V
ID = -2.0A
0.1
VGS = -4.5V
I D = -4.0A
0.05
0
-50
1.2
I D = -250µA
0.9
I D = -1mA
0.6
0.3
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
20
-25
C T , JUNCTIO N CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
f = 1MHz
15
TA = 150°C
10
T A= 125°C
T A= 85°C
5
0
0
T A= 25°C
1000
Ciss
C oss
100
Crss
T A= -55°C
10
-30
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
100
-25
-20
-15
-10
-5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
0
RDS(on)
Limited
VDS = -15V
8
I D = -4A
ID , DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCED INFORMATION
DMP3068L
6
4
2
0
0
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
0.1 T J(m ax) = 150°C
PW = 10ms
T A = 25°C
2
4
6
8
10
12
14
Q g, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
DMP3068L
Document number: DS37536 Rev. 2 - 2
16
V GS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
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0.1
PW = 1ms
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
January 2015
© Diodes Incorporated
DMP3068L
1
ADVANCED INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja (t) = r(t) * Rthja
Single Pulse
Rthja = 182°C/W
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest the version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
a
M
A
L
C
L1
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMP3068L
Document number: DS37536 Rev. 2 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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© Diodes Incorporated
DMP3068L
ADVANCED INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
www.diodes.com
DMP3068L
Document number: DS37536 Rev. 2 - 2
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January 2015
© Diodes Incorporated
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