CMBT2907 PNP Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: mm SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power dissipation up to Tamb = 25 oC Storage Temperature Junction Temperature DC Current Gain -VCE = 10V -IC = 500mA Turn-off switching time -ICon = 150 mA; -IBon = IBoff = 15 mA Transition frequency at f = 100 MHz -IC = 50 mA; -VCE = 20 V Thermal Characteristics Junction to Ambient in free air SYMBOL CMBT2907 CMBT2907A UNITS -VCEO -VCBO -VEBO -IC Ptot Tstg 40 60 5.0 60 60 5.0 V 600 250 -55 to +150 150 Tj hFE www.rectron.com o > 30 C > 50 toff < 100 ns fT > 200 MHz Rth(j-a) 500 K/W Electrical Characteristics (at Ta=25 oC unless otherwise specified) CONDITIONS DESCRIPTION SYMBOL IE = 0, -VCB = 50V -ICBO Collector Cut Off Current -ICBO IE = 0, -VCB = 50V, Tj=125oC -VEB = 0.5V, -VCE = 30V -ICEX -VEB = 3V, -VCE = 30V -IBEX Base Current w/reverse biased emitter junction Saturation Voltages -VCE(Sat) -IC = 150mA, -IB = 15mA -VBE(Sat) -VCE(Sat) -IC = 500mA, -IB = 50mA -VBE(Sat) -V(BR)CBO Open emitter; -IC= 10uA, IE= 0 Collector-base breakdown voltage -V(BR)CEO Open base; -IC= 10mA, IB= 0 Collector-emitter breakdown voltage Emitter-base breakdown voltage mA mW -V(BR)EBO Open collector; -IE= 10uA, IC= 0 CMBT2907 CMBT2907A < 20 < 10 < 20 < 10 < 50 UNITS nA uA nA < 50 < 0.4 < 1.3 < 1.6 V < 2.6 > 60 > 40 > 60 > 5.0 1 of 2 CMBT2907 PNP Silicon Planar Epitaxial Transistors DC Current Gain hFE > 35 > 75 -VCE = 10V, -IC = 0.1mA -VCE = 10V, -IC = 1mA > 50 > 100 -VCE = 10V, -IC = 10mA > 75 > 100 -VCE = 10V, -IC = 150mA -VCE = 10V, -IC = 500mA 100 to 300 > 30 > 50 Transition Frequency at f = 100 MHz fT -VCE=20V, -IC=50mA > 200 MHZ Output Capacitance at f = 1 MHz CO -VCB = 10V, IE = Ie = 0 < 8.0 pF Input Capacitance at f = 1 MHz Switching times (between 10% and 90%) Ci -VEB = 2V, IC = Ic = 0 < 30 pF -IC = 150mA, -IB = 15mA, VCC = 30V Turn-on time when switched to delay time td < 10 rise time tr < 40 ton < 45 turn on time (td + tr) Turn-off time when switched from -IC = 150mA, -IB = 15mA, VCC = 6V to cut-off with + IBM = 15 mA storage time ts fall time tf < 30 toff < 100 turn off time (ts + tf) www.rectron.com ns < 80 ns 2 of 2