200pin Unbuffered DDR SDRAM SO-DIMMs based on 256Mb D ver. (TSOP)
This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 256Mb D ver. DDR
SDRAMs in 400 mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 256Mb D ver. based unbuffered
SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard. It is
suitable for easy interchange and addition.
FEATURES
•
JEDEC Standard 200-pin small outline, dual in-line
memory module (SO-DIMM)
•
Programmable Burst Length 2 / 4 / 8 with both
sequential and interleave mode
•
Two ranks 32M x 64 and One rank 32M x 64, 16M x
64 organization
•
Edge-aligned DQS with data outs and Center-aligned
DQS with data inputs
•
2.6V ± 0.1V VDD and VDDQ Power supply for
DDR400, 2.5V ± 0.2V for DDR333 and below
•
Auto refresh and self refresh supported
•
8192 refresh cycles / 64ms
•
All inputs and outputs are compatible with SSTL_2
interface
•
Serial Presence Detect (SPD) with EEPROM
•
Fully differential clock operations (CK & /CK) with
133/166/200MHz
•
Built with 256Mb DDR SDRAMs in 400 mil TSOP II
packages
•
DLL aligns DQ and DQS transition with CK transition
•
Lead-free product listed for each configuration
(RoHS compliant)
•
Programmable CAS Latency: DDR266(2, 2.5 clock),
DDR333(2.5 clock), DDR400(3 clock)
ADDRESS TABLE
Organization
Ranks
SDRAMs
# of
DRAMs
# of row/bank/column Address
Refresh
Method
256MB
32M x 64
2
16Mb x 16
8
13(A0~A12)/2(BA0,BA1)/9(A0~A8)
8K / 64ms
256MB
32M x 64
1
32Mb x 8
8
13(A0~A12)/2(BA0,BA1)/10(A0~A9)
8K / 64ms
128MB
16M x 64
1
16Mb x 16
4
13(A0~A12)/2(BA0,BA1)/9(A0~A8)
8K / 64ms
PERFORMANCE RANGE
Part-Number Suffix
-D431
-J
-K
-H
Unit
Speed Bin
DDR400B
DDR333
DDR266A
DDR266B
-
3-3-3
2.5-3-3
2-3-3
2.5-3-3
CK
CL=3
200
-
-
-
MHz
CL=2.5
166
166
133
133
MHz
CL=2
133
133
133
133
MHz
CL - tRCD- tRP
Max Clock
Frequency
Note:
1. 2.6V +/- 0.1V VDD and VDDQ Power supply for DDR400 and 2.5V +/- 0.2V for DDR333 and below
Rev. 1.1 / May. 2005
1
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
11
200pin Unbuffered DDR SDRAM SO-DIMMs
ORDERING INFORMATION
Part Number
Density
HYMD216M646D[L]6-D43/J/K/H
128MB
Organization Ranks
16M x 64
1
# of
DRAMs
Material
DIMM Dimension
4
Normal
67.60 x 31.75 x 3.8 [mm3]
↑
HYMD216M646D[L]P6-D43/J/K/H
128MB
16M x 64
1
4
Lead-free1
HYMD232M646D[L]8-D43/J/K/H
256MB
32M x 64
1
8
Normal
↑
HYMD232M646D[L]P8-D43/J/K/H
256MB
32M x 64
1
8
Lead-free1
↑
HYMD232M646D[L]6-D43/J/K/H
256MB
32M x 64
2
8
Normal
↑
HYMD232M646D[L]P6-D43/J/K/H
256MB
32M x 64
2
8
Lead-free1
↑
Note:
1. The “Pb-free” products contain Lead less than 0.1% by weight and satisfy RoHS - please contact Hynix for product availability.
* These products are built with HY5DU564(8,16)22DT[L][P] the Hynix DDR SDRAM component.
Rev. 1.1 / May. 2005
2
11
200pin Unbuffered DDR SDRAM SO-DIMMs
PIN DESCRIPTION
Pin
Pin Description
CK0~2, /CK0~2
/CS0, /CS1
CKE0, CKE1
/RAS, /CAS, /WE
A0 ~ A13
A10/AP
BA0, BA1
DQ0~DQ63
CB0~CB7
DQS0~DQS8
DM0~8
Pin
Differential Clock Inputs
Chip Select Inputs
Clock Enable Inputs
Commend Sets Inputs
Address Inputs
Address Input/Autoprecharge
Bank Address
Data Inputs/Outputs
Data Check bits
Data Strobes
Data-in Masks
Pin Description
VDD
VSS
VREF
VDDSPD
VDDID
SA0~SA2
SCL
SDA
DU
NC
TEST
Power Supply for Core and I/O
Ground
Input/Output Reference
Power Supply for SPD
VDD, VDDQ Level Detection
SPD Address Inputs
SPD Clock Input
SPD Data Input/Output
Do not Use
No Connection
Reserved for test equipment use
PIN ASSIGNMENT
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
1
VREF
2
VREF
51
VSS
52
VSS
101
A9
102
A8
151
DQ42
152
DQ46
3
VSS
4
VSS
53
DQ19
54
DQ23
103
VSS
104
VSS
153
DQ43
154
DQ47
5
DQ0
6
DQ4
55
DQ24
56
DQ28
105
A7
106
A6
155
VDD
156
VDD
7
DQ1
8
DQ5
57
VDD
58
VDD
107
A5
108
A4
157
VDD
158
/CK1
9
VDD
10
VDD
59
DQ25
60
DQ29
109
A3
110
A2
159
VSS
160
CK1
11
DQS0
12
DM0
61
DQS3
62
DM3
111
A1
112
A0
161
VSS
162
VSS
13
DQ2
14
DQ6
63
VSS
64
VSS
113
VDD
114
VDD
163
DQ48
164
DQ52
15
VSS
16
VSS
65
DQ26
66
DQ30
115
A10,AP
116
BA1
165
DQ49
166
DQ53
17
DQ3
18
DQ7
67
DQ27
68
DQ31
117
BA0
118
/RAS
167
VDD
168
VDD
19
DQ8
20
DQ12
69
VDD
70
VDD
119
/WE
120
/CAS
169
DQS6
170
DM6
21
VDD
22
VDD
71
CB0
72
CB4
121
/CS0
122
/CS1
171
DQ50
172
DQ54
23
DQ9
24
DQ13
73
CB1
74
CB5
123
NC,A13
124
DU
173
VSS
174
VSS
25
DQS1
26
DM1
75
VSS
76
VSS
125
VSS
126
VSS
175
DQ51
176
DQ55
27
VSS
28
VSS
77
DQS8
78
DM8
127
DQ32
128
DQ36
177
DQ56
178
DQ60
29
DQ10
30
DQ14
79
CB2
80
CB6
129
DQ33
130
DQ37
179
VDD
180
VDD
31
DQ11
32
DQ15
81
VDD
82
VDD
131
VDD
132
VDD
181
DQ57
182
DQ61
33
VDD
34
VDD
83
CB3
84
CB7
133
DQS4
134
DM4
183
DQS7
184
DM7
35
CK0
36
VDD
85
DU
86
DU
135
DQ34
136
DQ38
185
VSS
186
VSS
37
/CK0
38
VSS
87
VSS
88
VSS
137
VSS
138
VSS
187
DQ58
188
DQ62
39
VSS
40
VSS
89
CK2
90
VSS
139
DQ35
140
DQ39
189
DQ59
190
DQ63
41
DQ16
42
DQ20
91
/CK2
92
VDD
141
DQ40
142
DQ44
191
VDD
192
VDD
43
DQ17
44
DQ21
93
VDD
94
VDD
143
VDD
144
VDD
193
SDA
194
SA0
45
VDD
46
VDD
95
CKE1
96
CKE0
145
DQ41
146
DQ45
195
SCL
196
SA1
47
DQS2
48
DM2
97
DU
98
DU
147
DQS5
148
DM5
197
VDDSPD
198
SA2
49
DQ18
50
DQ22
99
A12
100
A11
149
VSS
150
VSS
199
VDDID
200
NC,TEST
note:
1. Pins 71, 72, 73, 74,77,78,79, 80, 83, 84 are reserved for x72 variants of this module and are not used on the x64 versions.
2. Pin 86 is reserved for a registered variant of this module and is not used on the unbuffered version.
3. Pin 89, 91 are reserved for x72 modules or registered modules and is not used on the unbuffered version.
4. Pin 95, 122 are not used for single rank module.
5. Pin 123 is “NC” for 256MB, 512MB, and 1GB, or “A13” for 2GB module.
Rev. 1.1 / May. 2005
3
11
200pin Unbuffered DDR SDRAM SO-DIMMs
FUNCTIONAL BLOCK DIAGRAM
128MB, 16M x 64 Unbuffered SO-DIMM: HYMD216M646D[L][P]6
/CS
DQS0
DM0
DQ00
DQ01
DQ02
DQ03
DQ04
DQ05
DQ06
DQ07
DQS1
DM1
DQ08
DQ09
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS /CS
LDM
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
UDQS
UDM
D0
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
LDQS
LDM
/S
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
UDQS
UDM
D1
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
LDQS /CS
LDM
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
UDQS
UDM
D2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
LDQS
LDM
/S
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
UDQS
UDM
D3
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
# Unless otherwise noted, resistor values are 22O +- 5%
BA0-BA1
SDRAMs D0-D3
A0-AN
SDRAMs D0-D3
Serial Presence Detector
(SPD)
/RAS
SDRAMs D0-D3
SCL
/CAS
SDRAMs D0-D3
SA0
/WE
SDRAMs D0-D3
SA1
A1
CKE0
SDRAMs D0-D3
SA2
A2
CKE1
N.C.
VDD SPD
VREF
VDD
VSS
VDDID
Rev. 1.1 / May. 2005
SPD
SDRAMS DO-D7
SDRAMS DO-D7
VDD and VDDQ
SDRAMS DO-D7,SPD
Strap:see Note 4
A0
SDA
WP
CK0
/CK0
2 loads
CK1
/CK1
2 loads
CK2
/CK2
0 loads
Notes :
DQ wiring may differ from that described in this
drawing : however DQ/DM/DQS relationship are
maintained as shown.
VDDID strap connections:
(for memory device VDD, VDDQ)
Strap out (open) : VDD = VDDQ
Strap in (closed) : VDD ≠ VDDQ
4
11
200pin Unbuffered DDR SDRAM SO-DIMMs
FUNCTIONAL BLOCK DIAGRAM
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]8
/CS
DQS0
DM0
DQ00
DQ01
DQ02
DQ03
DQ04
DQ05
DQ06
DQ07
DQS
DM
DQS1
DM1
DQ08
DQ09
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS
DM
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D0
I/O5
I/O6
I/O7
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D1
I/O5
I/O6
I/O7
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D2
I/O5
I/O6
I/O7
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D3
I/O5
I/O6
I/O7
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS
DM
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D4
I/O5
I/O6
I/O7
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D5
I/O5
I/O6
I/O7
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D6
I/O5
I/O6
I/O7
DQS
DM
I/O0
I/O1
I/O2
I/O3
I/O4
/CS
D7
I/O5
I/O6
I/O7
# Unless otherwise noted, resistor values are 22O +- 5%
BA0-BA1
SDRAMs D0-D7
A0-AN
SDRAMs D0-D7
Serial Presence Detector
(SPD)
/RAS
SDRAMs D0-D7
SCL
/CAS
SDRAMs D0-D7
SA0
/WE
SDRAMs D0-D7
SA1
A1
CKE0
SDRAMs D0-D3
SA2
A2
CKE1
N.C.
VDD SPD
SPD
VDD
SDRAMS DO-D7
SDRAMS DO-D7
VDD and VDDQ
VSS
SDRAMS DO-D7,SPD
VREF
VDDID
Rev. 1.1 / May. 2005
Strap:see Note 4
A0
SDA
WP
CK0
/CK0
4 loads
CK1
/CK1
4 loads
CK2
/CK2
0 loads
Notes :
DQ wiring may differ from that described in this
drawing : however DQ/DM/DQS relationship are
maintained as shown.
VDDID strap connections:
(for memory device VDD, VDDQ)
Strap out (open) : VDD = VDDQ
Strap in (closed) : VDD ≠ VDDQ
5
11
200pin Unbuffered DDR SDRAM SO-DIMMs
FUNCTIONAL BLOCK DIAGRAM
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]6
/CS1
/CS0
DQS0
DM0
DQ00
DQ01
DQ02
DQ03
DQ04
DQ05
DQ06
DQ07
DQS1
DM1
DQ08
DQ09
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
LDQS /CS
LDM
LDQS /CS
LDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
UDQS
UDM
D0
I/O7
UDQS
UDM
D4
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
I/O7
LDQS /CS
LDM
LDQS /CS
LDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
UDQS
UDM
D1
I/O7
UDQS
UDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
I/O7
D5
DQS4
DM4
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQS5
DM5
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQS7
DM7
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS /CS
LDM
LDQS /CS
LDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
UDQS
UDM
D2
I/O7
UDQS
UDM
D6
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
I/O7
LDQS /CS
LDM
LDQS /CS
LDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
UDQS
UDM
D3
I/O7
UDQS
UDM
I/O0
I/O1
I/O2
I/O0
I/O1
I/O2
I/O3
I/O4
I/O3
I/O4
I/O5
I/O6
I/O5
I/O6
I/O7
I/O7
D7
# Unless otherwise noted, resistor values are 22O +- 5%
BA0-BA1
SDRAMs D0-D7
A0-AN
SDRAMs D0-D7
Serial Presence Detector
(SPD)
/RAS
SDRAMs D0-D7
SCL
/CAS
SDRAMs D0-D7
SA0
/WE
SDRAMs D0-D7
SA1
A1
CKE0
SDRAMs D0-D3
SA2
A2
CKE1
SDRAMs D4-D7
VDD SPD
VREF
VDD
VSS
VDDID
Rev. 1.1 / May. 2005
SPD
SDRAMS DO-D7
SDRAMS DO-D7
VDD and VDDQ
SDRAMS DO-D7,SPD
Strap:see Note 4
A0
SDA
WP
CK0
/CK0
4 loads
CK1
/CK1
4 loads
CK2
/CK2
0 loads
Notes :
DQ wiring may differ from that described in this
drawing : however DQ/DM/DQS relationship are
maintained as shown.
VDDID strap connections:
(for memory device VDD, VDDQ)
Strap out (open) : VDD = VDDQ
Strap in (closed) : VDD ≠ VDDQ
6
11
200pin Unbuffered DDR SDRAM SO-DIMMs
ABSOLUTE MAXIMUM RATINGS1
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on VDD relative to VSS
Symbol
Rating
Unit
TA
0 ~ 70
oC
TSTG
-55 ~ 150
oC
VDD
-1.0 ~ 3.6
V
Voltage on VDDQ relative to VSS
VDDQ
-1.0 ~ 3.6
V
Voltage on inputs relative to Vss
VINPUT
-1.0 ~ 3.6
V
Voltage on I/O pins relative to Vss
VIO
-0.5 ~3.6
V
Output Short Circuit Current
IOS
50
Soldering Temperature ⋅ Time
mA
oC
260 ⋅ 10
TSOLDER
⋅ Sec
Note:
1. Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Parameter
Power Supply Voltage (DDR 200, 266, 333)
Symbol
Min
Typ.
Max
Unit
VDD
2.3
2.5
2.7
V
Note
VDD
2.5
2.6
2.7
V
Power Supply Voltage (DDR 200, 266, 333)
VDDQ
2.3
2.5
2.7
V
1
Power Supply Voltage (DDR 400)
VDDQ
2.5
2.6
2.7
V
1,2
Input High Voltage
VIH
VREF + 0.15
-
VDDQ + 0.3
V
Input Low Voltage
VIL
-0.3
-
VREF - 0.15
V
Termination Voltage
VTT
VREF - 0.04
VREF
VREF + 0.04
V
VREF
0.49*VDDQ
0.5*VDDQ
0.51*VDDQ
V
VIN(DC)
-0.3
-
VDDQ+0.3
V
Power Supply Voltage (DDR 400)
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
2
3
4
VID(DC)
0.36
-
VDDQ+0.6
V
5
VI(RATIO)
0.71
-
1.4
-
6
Input Leakage Current
ILI
-2
-
2
uA
7
Output Leakage Current
ILO
-5
-
5
uA
8
IOH
-16.8
-
-
mA
IOL
16.8
-
-
mA
IOH
-13.6
-
-
mA
IOL
13.6
-
-
mA
V-I Matching: Pullup to Pulldown Current Ratio
Output High Current
Normal Strength
(min VDDQ, min VREF, min VTT)
Output Driver
(VOUT=VTT ± 0.84) Output Low Current
(min VDDQ, max VREF, max VTT)
Half Strength Out- Output High Current
put Driver
(min VDDQ, min VREF, min VTT)
(VOUT=VTT ± 0.68) Output Low Current
(min VDDQ, max VREF, max VTT)
Note:
1. VDDQ must not exceed the level of VDD.
2. For DDR400, VDD=2.6V ± 0.1V, VDDQ=2.6V ± 0.1V
3. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
4. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same. Peak to
peak noise on VREF may not exceed ± 2% of the DC value.
5. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
6. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
7. VIN=0 to VDD, All other pins are not tested under VIN =0V.
8. DQs are disabled, VOUT=0 to VDDQ.
Rev. 1.1 / May. 2005
7
11
200pin Unbuffered DDR SDRAM SO-DIMMs
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
128MB, 32M x 64 Unbuffered SO-DIMM: HYMD216M646D[L][P]6
Symbol
Test Condition
Speed
-D43
-J
-K
-H
Unit
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
360
320
280
280
mA
IDD1
One bank; Active - Read - Precharge; Burst
Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
400
400
360
360
mA
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
40
40
40
40
mA
IDD2F
/CS=High, All banks idle; tCK=tCK(min); CKE=
High; address and control inputs changing once
per clock cycle. VIN=VREF for DQ, DQS and DM
240
200
160
160
mA
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
60
60
60
60
mA
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM
and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once
per clock cycle
160
140
120
120
mA
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
800
760
680
680
mA
IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
800
760
680
680
mA
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh
600
560
520
520
mA
IDD6
CKE=<0.2V; External clock on; tCK Normal
=tCK(min)
Low Power
12
12
12
12
mA
6
6
6
6
mA
IDD7
Four bank interleaving with BL=4 Refer to the following page for detailed test condition
1000
960
880
880
mA
Note
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.1 / May. 2005
8
11
200pin Unbuffered DDR SDRAM SO-DIMMs
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]8
Symbol
Test Condition
Speed
-D43
-J
-K
-H
Unit
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
720
640
560
560
mA
IDD1
One bank; Active - Read - Precharge; Burst
Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
800
800
720
720
mA
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
80
80
80
80
mA
IDD2F
/CS=High, All banks idle; tCK=tCK(min); CKE=
High; address and control inputs changing once
per clock cycle. VIN=VREF for DQ, DQS and DM
480
400
320
320
mA
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
120
120
120
120
mA
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM
and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once
per clock cycle
400
360
320
320
mA
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
1440
1280
1200
1200
mA
IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
1440
1280
1200
1200
mA
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh
1200
1200
1120
1120
mA
IDD6
CKE=<0.2V; External clock on; tCK Normal
=tCK(min)
Low Power
24
24
24
24
mA
12
12
12
12
mA
IDD7
Four bank interleaving with BL=4 Refer to the following page for detailed test condition
1840
1760
1600
1600
mA
Note
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.1 / May. 2005
9
11
200pin Unbuffered DDR SDRAM SO-DIMMs
IDD SPECIFICATION AND CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]6
Symbol
Test Condition
Speed
DDR400B DDR333 DDR266A DDR266B
Unit
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
600
520
440
440
mA
IDD1
One bank; Active - Read - Precharge; Burst
Length=2; tRC=tRC(min); tCK=tCK(min); address
and control inputs changing once per clock cycle
640
600
520
520
mA
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
80
80
80
80
mA
IDD2F
/CS=High, All banks idle; tCK=tCK(min); CKE=
High; address and control inputs changing once
per clock cycle. VIN=VREF for DQ, DQS and DM
480
400
320
320
mA
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
120
120
120
120
mA
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; tRC=tRAS(max); tCK=tCK(min); DQ, DM
and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once
per clock cycle
440
380
320
320
mA
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
1040
960
840
840
mA
IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
1040
960
840
840
mA
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh
840
800
720
720
mA
IDD6
CKE=<0.2V; External clock on; tCK Normal
=tCK(min)
Low Power
24
24
24
24
mA
12
12
12
12
mA
IDD7
Four bank interleaving with BL=4 Refer to the following page for detailed test condition
1240
1160
1040
1040
mA
Note
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev.
10
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Parameter
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Symbol
Min
Max
Unit
VIH(AC)
VREF + 0.31
-
V
Note
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
VIL(AC)
-
VREF - 0.31
V
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ + 0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
Note:
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Value
Unit
Reference Voltage
Parameter
VDDQ x 0.5
V
Termination Voltage
VDDQ x 0.5
V
AC Input High Level Voltage (VIH, min)
VREF + 0.31
V
AC Input Low Level Voltage (VIL, max)
VREF - 0.31
V
Input Timing Measurement Reference Level Voltage
VREF
V
Output Timing Measurement Reference Level Voltage
VTT
V
Input Signal maximum peak swing
1.5
V
1
V/ns
Input minimum Signal Slew Rate
Termination Resistor (RT)
50
Ω
Series Resistor (RS)
25
Ω
Output Load Capacitance for Access Time Measurement (CL)
30
pF
OUTPUT LOAD CIRCUIT
VTT
RT=50Ω
Output
Zo=50Ω
VREF
CL=30pF
Rev.
11
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
CAPACITANCE (TA=25oC, f=100MHz)
128MB: HYMD216M646D[L][P]6
Symbol
Min
Max
Unit
A0 ~ A12, BA0, BA1
Input/Output Pins
CIN1
28
40
pF
/RAS, /CAS, /WE
CIN2
28
40
pF
CKE0, CKE1
CIN3
28
40
pF
/CS0, /CS1
CIN4
28
40
pF
CK0, /CK0, CK1, /CK1, CK2, /CK2
CIN5
16
25
pF
DM0 ~ DM7
CIN6
7
12
pF
DQ0 ~ DQ63, DQS0 ~ DQS7
CI01
7
12
pF
Symbol
Min
Max
Unit
A0 ~ A12, BA0, BA1
CIN1
36
48
pF
/RAS, /CAS, /WE
CIN2
36
48
pF
CKE0
CIN3
36
40
pF
/CS
CIN4
36
40
pF
CK0, /CK0, CK1, /CK1, CK2, /CK2
CIN5
18
27
pF
DM0 ~ DM7
CIN6
7
12
pF
DQ0 ~ DQ63, DQS0 ~ DQS7
CI01
7
12
pF
256MB: HYMD232M646D[L][P]8
Input/Output Pins
256MB: HYMD232M646D[L][P]6
Symbol
Min
Max
Unit
A0 ~ A12, BA0, BA1
Input/Output Pins
CIN1
36
48
pF
/RAS, /CAS, /WE
CIN2
36
48
pF
CKE0, CKE1
CIN3
28
40
pF
/CS0, /CS1
CIN4
28
40
pF
CK0, /CK0, CK1, /CK1, CK2, /CK2
CIN5
18
27
pF
DM0 ~ DM7
CIN6
12
18
pF
DQ0 ~ DQ63, DQS0 ~ DQS7
CI01
12
18
pF
Rev.
12
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
AC CHARACTERISTICS (note: 1 - 9 / AC operating conditions unless otherwise noted)
Parameter
DDR400B
Symbol
DDR333
DDR266A
DDR266B
DDR200
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
UNIT
Row Cycle Time
tRC
55
-
60
-
65
-
65
-
70
-
ns
Auto Refresh Row
Cycle Time
tRFC
70
-
72
-
75
-
75
-
80
-
ns
Row Active Time
tRAS
40
70K
42
70K
45
120K
45
120K
50
120K
ns
tRAP
tRCD or
tRASmin
-
tRCD or
tRASmin
-
tRCD or
tRASmin
-
tRCD or
tRASmin
-
tRCD or
tRASmin
-
ns
Row Address to
Column Address Delay
tRCD
15
-
18
-
20
-
20
-
20
-
ns
Row Active to Row
Active Delay
tRRD
10
-
12
-
15
-
15
-
15
-
ns
Column Address to
Column Address Delay
tCCD
1
-
1
-
1
-
1
-
1
-
tCK
Row Precharge Time
tRP
15
-
18
-
20
-
20
-
20
-
ns
Write Recovery Time
tWR
15
-
15
-
15
-
15
-
15
-
ns
Internal Write to Read
Command Delay
tWTR
2
-
1
-
1
-
1
-
1
-
tCK
tDAL
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
tCK
5
10
-
-
-
-
-
-
-
-
-
-
6
12
7.5
12
7.5
12
8.0
12
ns
-
-
7.5
12
7.5
12
10
12
10
12
ns
Active to Read with
Auto Precharge Delay
Auto Precharge Write
Recovery + Precharge
Time22
CL = 3
System
Clock Cycle CL = 2.5
Time24
CL = 2
tCK
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Data-Out edge to Clock
edge Skew
tAC
-0.7
0.7
-0.7
0.7
-0.75
0.75
-0.75
0.75
-0.75
0.75
ns
-0.55
0.55
-0.6
0.6
-0.75
0.75
-0.75
0.75
-0.75
0.75
ns
tDQSQ
-
0.4
-
0.45
-
0.5
-
0.5
-
0.6
ns
tQH
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
ns
tHP
min
(tCL,tCH)
-
min
(tCL,tCH)
-
min
(tCL,tCH)
-
min
(tCL,tCH)
-
min
(tCL,tCH)
-
ns
tQHS
-
0.5
-
0.55
-
0.75
-
0.75
-
0.75
ns
DQS-Out edge to Clock
tDQSCK
edge Skew
DQS-Out edge to DataOut edge Skew21
Data-Out hold time
from DQS20
Clock Half Period19,20
Data Hold Skew
Factor20
Valid Data Output
Window
Rev.
13
tDV
tQH-tDQSQ
1.1
tQH-tDQSQ
/
tQH-tDQSQ
tQH-tDQSQ
May.
tQH-tDQSQ
ns
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
- Continue
Parameter
Symbol
DDR400B
DDR333
DDR266A
DDR266B
DDR200
UNIT
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tHZ
-0.7
0.7
-0.7
0.7
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
tLZ
-0.7
0.7
-0.7
0.7
-0.75
0.75
-0.75
0.75
-0.8
0.8
ns
tIS
0.6
-
0.75
-
0.9
-
0.9
-
1.1
-
ns
tIH
0.6
-
0.75
-
0.9
-
0.9
-
1.1
-
ns
tIS
0.7
-
0.8
-
1.0
-
1.0
-
1.1
-
ns
tIH
0.7
-
0.8
-
1.0
-
1.0
-
1.1
-
ns
tIPW
2.2
-
2.2
-
2.2
-
2.2
-
2.5
-
ns
Write DQS High Level Width
tDQSH
0.35
-
0.35
-
0.35
-
0.35
-
0.35
-
tCK
Write DQS Low Level Width
tDQSL
0.35
-
0.35
-
0.35
-
0.35
-
0.35
-
tCK
Clock to First Rising edge of DQSIn
tDQSS
0.72
1.25
0.75
1.25
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
tCK
DQS falling edge hold time from
CK
tDSH
0.2
-
0.2
-
0.2
-
0.2
-
0.2
-
tCK
DQ & DM input setup time25
tDS
0.4
-
0.45
-
0.5
-
0.5
-
0.6
-
ns
DQ & DM input hold time25
tDH
0.4
-
0.45
-
0.5
-
0.5
-
0.6
-
ns
DQ & DM Input Pulse Width17
tDIPW
1.75
-
1.75
-
1.75
-
1.75
-
2
-
ns
Read DQS Preamble Time
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read DQS Postamble Time
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
0
-
0
-
0
-
0
-
0
-
ns
-
0.25
-
0.25
-
0.25
-
0.25
-
tCK
Data-out high-impedance window
from CK,/CK10
Data-out low-impedance window
from CK, /CK10
Input Setup Time (fast slew
rate)14,16-18
Input Hold Time (fast slew
rate)14,16-18
Input Setup Time (slow slew
rate)15-18
Input Hold Time (slow slew
rate)15-18
Input Pulse Width17
Write DQS Preamble Setup Time12 tWPRES
tWPREH 0.25
Write DQS Preamble Hold Time
11
Write DQS Postamble Time
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
Mode Register Set Delay
tMRD
2
-
2
-
2
-
2
-
2
-
tCK
tXSNR
75
-
75
-
75
-
75
-
80
-
ns
tXSRD
200
-
200
-
200
-
200
-
200
-
tCK
tREFI
-
7.8
-
7.8
-
7.8
-
7.8
-
7.8
us
Exit Self Refresh to non-Read
command23
Exit Self Refresh to Read
command
Average Periodic Refresh
Interval13,25
Rev.
14
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
Note:
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to
be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics).
VDDQ
50 Ω
Output
(VOUT)
30 pF
Figure: Timing Reference Load
4. AC timing and IDD tests may use a VIL to VIHswing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the
dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0.2VDDQ is
recognized as LOW.
7. The CK, /CK input reference level (for timing referenced to CK, /CK) is the point at which CK and /CK cross; the input reference
level for signals other than CK, /CK is VREF.
8. The output timing reference voltage level is VTT.
9. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
10. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
14. For command/address input slew rate ≥ 1.0 V/ns.
15. For command/address input slew rate ≥ 0.5 V/ns and ＜ 1.0 V/ns
16. For CK & /CK slew rate ≥ 1.0 V/ns (single-ended)
17. These parameters guarantee device timing, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
18. Slew Rate is measured between VOH(ac) and VOL(ac).
19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half
period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
Rev.
15
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
20.tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the
worst case pull--in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects,
and p-channel to n-channel variation of the output drivers.
21. tDQSQ:
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given
cycle.
22. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For DDR266B at CL=2.5 and tCK=7.5 ns
tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks
= ((2) + (3)) clocks
= 5 clocks
23. In all circumstances, tXSNR can be satisfied using
tXSNR = tRFCmin + 1*tCK
24. The only time that the clock frequency is allowed to change is during self-refresh mode.
25. If refresh timing or tDS/tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid
READ can be executed.
Rev.
16
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS
The following tables are described specification parameters that required in systems using DDR devices to ensure
proper performannce. These characteristics are for system simulation purposes and are guaranteed by design.
Input Slew Rate for DQ/DM/DQS
AC CHARACTERISTICS
(Table a.)
DDR400
DDR333
DDR266
DDR200
PARAMETER
Symbol
min
max
min
max
min
max
min
max
DQ/DM/DQS input slew rate
measured between VIH(DC),
VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
0.5
4.0
0.5
4.0
0.5
4.0
UNIT
Note
V/ns
1,12
Address & Control Input Setup & Hold Time Derating (Table b.)
Input Slew Rate
Delta tIS
Delta tIH
UNIT
Note
0.5 V/ns
0
0
ps
9
0.4 V/ns
+50
0
ps
9
0.3 V/ns
+100
0
ps
9
DQ & DM Input Setup & Hold Time Derating
(Table c.)
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
0.5 V/ns
0
0
ps
11
0.4 V/ns
+75
0
ps
11
0.3 V/ns
+150
0
ps
11
DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate
Input Slew Rate
Delta tDS
Delta tDH
UNIT
Note
± 0.0 ns/V
0
0
ps
10
± 0.25 ns/V
+50
+50
ps
10
± 0.5 ns/V
+100
+100
ps
10
Output Slew Rate Characteristics (for x4, x8 Devices)
Slew Rate
Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
(Table d.)
(Table e.)
Note
Pullup Slew Rate
1.2 - 2.5
1.0
4.5
1,3,4,6,7,8
Pulldown Slew Rate
1.2 - 2.5
1.0
4.5
2,3,4,6,7,8
Output Slew Rate Characteristics (for x16 Device) (Table f.)
Slew Rate
Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Note
Pullup Slew Rate
1.2 - 2.5
1.0
4.5
1,3,4,6,7,8
Pulldown Slew Rate
1.2 - 2.5
1.0
4.5
2,3,4,6,7,8
Output Slew Rate Matching Ratio Characteristics
Slew Rate Characteristic
DDR266A
(Table g.)
DDR266B
DDR200
Parameter
min
max
min
max
min
max
Output Slew Rate Matching Ratio
(Pullup to Pulldown)
-
-
-
-
0.71
1.4
Rev.
17
1.1
/
May.
Note
5,12
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
Note:
1. Pullup slew rate is characterized under the test conditions as shown in below Figure.
Test Point
Output
(VOUT)
50
Ω
VSSQ
Figure: Pullup Slew rate
2. Pulldown slew rate is measured under the test conditions shown in below Figure.
VDDQ
50Ω
Output
(VOUT)
Test Point
Figure: Pulldown Slew rate
3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ± 250mV)
Pulldown slew rate is measured between (VDDQ/2 + 320mV ± 250mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example: For typical slew, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
4. Evaluation conditions
Typical: 25 oC (Ambient), VDDQ = nominal, typical process
Minimum: 70 oC (Ambient), VDDQ = minimum, slow-slow process
Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process
5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process
variation.
6. Verified under typical conditions for qualification purposes.
7. TSOP-II package devices only.
8. Only intended for operation up to 256 Mbps per pin.
9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.
The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c
& d. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, fall rate. Input slew rate is based on
the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The
delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(slew Rate2)}
For example:
If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would
result in the need for an increase in tDS and tDH of 100ps.
11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the
lesser of the AC-AC slew rate and the DC-DC slew rate. The input slew rate is based on the lesser of the slew rates determined by
either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for rising transitions.
12. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic.
Rev.
18
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
SIMPLIFIED COMMAND TRUTH TABLE
Command
CKEn-1
CKEn
/CS
/RAS
/CAS
/WE
Extended Mode Register Set
H
X
L
L
L
L
OP code
1,2
Mode Register Set
H
X
L
L
L
L
OP code
1,2
H
X
X
1
H
X
Device Deselect
No Operation
Bank Active
Read
H
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Read Burst Stop
Auto Refresh
Entry
Self Refresh
Precharge Power
Down Mode
Active Power Down
Mode
X
H
X
X
X
L
H
H
H
L
L
H
H
L
H
L
H
ADDR
A10/AP
RA
CA
BA
V
L
H
L
V
1
1
1,3
1
H
X
L
H
L
L
CA
H
X
L
L
H
L
X
H
X
L
H
H
L
X
1
H
H
L
L
L
H
X
1
H
L
L
L
L
H
H
X
X
X
L
H
H
H
Exit
L
H
Entry
H
L
Exit
L
H
Entry
H
L
Exit
L
H
H
V
Note
H
X
L
V
1,4
1,5
1
1
X
1
H
X
X
X
1
L
H
H
H
1
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
1
1
1
X
1
X
1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Note:
1. DM states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A12 and BA0~BA1 used for Mode Registering during Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Precharge command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tWR+tRP). Write Recovery Time(tWR) is needed to guarantee that the last data has been
completely written.
5. If A10/AP is High when Row Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
WRITE MASK TRUTH TABLE
Function
CKEn-1
CKEn
/CS, /RAS, /CAS, /WE
DM
ADDR
A10/AP
BA
Note
Data Write
H
X
X
L
X
1
Data-In Mask
H
X
X
H
X
1
Note:
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.
Rev.
19
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
PACKAGE DIMENSIONS
128MB, 16M x 64 Unbuffered SO-DIMM : HYMD216M646D[L][P]6
Front
Millimeters
Inches
Unit:
67.60 mm
2.00 mm
Component
Keepout
Area
2.00 mm
31.75 mm
20.00 mm
Side
3.8mm
MAX.
1
39
41
199
Back
2.0 mm
2
40
2.0 mm
42
200
(Front)
1.1mm
MAX.
# The location and number of additional
device can be different from real product
Rev.
21
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
PACKAGE DIMENSIONS
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]8
Front
Millimeters
Inches
Unit:
67.60 mm
2.00 mm
Component
Keepout
Area
2.00 mm
31.75 mm
20.00 mm
1
39
41
199
Back
2.0 mm
2
40
Side
2.0 mm
42
200
3.8mm
MAX.
(Front)
1.1mm
MAX.
Rev.
22
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
PACKAGE DIMENSIONS
256MB, 32M x 64 Unbuffered SO-DIMM: HYMD232M646D[L][P]6
Front
Millimeters
Inches
Unit:
67.60 mm
2.00 mm
Component
Keepout
Area
2.00 mm
31.75 mm
20.00 mm
1
39
41
199
Back
2.0 mm
2
40
Side
2.0 mm
42
200
3.8mm
MAX.
(Front)
1.1mm
MAX.
Rev.
23
1.1
/
May.
2005
11
200pin Unbuffered DDR SDRAM SO-DIMMs
REVISION HISTORY
Revision
History
Date
1.0
First Version Release - Datasheet coverage is changed from an individual module part to a
component based module family
Feb. 2005
1.1
Corrected PIN DESCRIPTION and PIN ASSIGNMENT Tables
May. 2005
Rev.
24
1.1
/
May.
Remark
2005