<£Eml-Condu<!toi tPtoducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 BFX38 BFX39 BFX40 BFX41 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR 9.40 (0.371 7.76(0.306) 8,51 0.335) k APPLICATIONS 6.10(0.240) 6 60 (0,260) i • General Purpose Industrial Applications t 0.89 12.70 (O.oasp1 (0.500) 0.41 (0.016) din. I[ / /"' k 2 DESCRIPTION r The BFX38-41 are Silicon Planar Epitaxial PNP transitors in Jedec TO39 metal case, designed for a wide variety of applications. \ \ (0,100) TO39 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) BFX38 BFX39 BFX40 BFX41 VCBO Collector- Base Voltage -55V -75V VCEO Collector - Emitter Voltage -55V -75V VEBO Emitter -Base Voltage -5V Ic Collector Current -1A Ptot Total Power Dissipation Tarnb < 25°C Tease <25°C T3tg,Tj Storage and Junction Temperature 0.8W 4W -55 to 200 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter ICBO V(BR)CBO Collector Cutoff Current Collector-Base Breakdown Voltage Test Conditions Min. BFX38 VCB = - 40V IE = 0 BFX39 T amb =125°C BFX40 VCB = - 50V BFX41 T amb =125°C BFX38 |c = -10uA IE = 0 -55 IC = -10MA IE = 0 -75 . .. A lc = -10mA . n IB^O -55 , ._ . lc = -10mA , n ln-0 -75 !E = -10uA lc = 0 -5 ]E =° BFX39 BFX41 VCEO(SUS)* Collector Emitter Sustaining BFX39 Vo|tage BFX40 BFX41 (BR)EBO Emitter - Base voltage Breakdown ALL Vo|tgge VBECSAD- Voltgge nA -50 uA -0.2 -50 nA -0.25 -50 uA V V -0.12 -0.15 lc = - 500mA IB = - 50mA -0.3 -0.5 lc = -150mA IB = -15mA -0.8 -0.9 lc = - 500mA IB = - 50mA BFX38 BFX40 -0.9 -1.1 Collector- Emitter Saturation VCE(SAT)" -50 -0.25 V BFX4° BFX38 Typ. Max. Unit -0.2 lc = -150mA Base - Emitter Saturation l c --100uA IB = -15mA VCE = -5V 60 90 lc = - 100mA VCE = -5V 85 130 lc = - 500mA VCE = -5V 60 120 V V BFX39 BFX41 hFE« DC Current Gain lc = -100uA VCE = -5V lc = . 100mA VCE = - 5 V 30 45 40 70 lc = - 500mA VCE = -5V 25 65 IC = -1A VCE = -5V BFX38 30 BFX39 15 BFX40 25 BFX41 10 lc = . 100mA V C E ^ - 5 V Tamb = -55°C BFX38 BFX40 30 BFX39 BFX41 15 — BFX38 BFX39 BFX40 BFX41 Parameter fT Transitions Frequency CEBO Emitter - Base Capacitance CCBO Collector - Base Capacitance ton Turn-on time ts Storage Time tf Fall Time Test Conditions lc = -50mA V CE =-10V f=100MHz lc = 0 VEB = -0.5V f=1MHz |E = O vCB = -o.5V f=1MHz lc = - 500mA Vcc = -30V IB1 = -50mA lc = - 500mA Vcc = - 30V IB1 = IB2 = -50mA lc = - 500mA Vcc = - 30V IB1 = - IB2 = -50mA Min. Typ. 100 150 75 Max. Unit MHz 120 PF 15 20 33 100 160 350 27 50 ns Pulsed: pulse duration = 300u.s, duty cycle = 1% THERMAL CHARACTERISTICS Rethfl-case) Thermal Resistance Junction to case 44 °C/W ^ethG-amb) 219 °C/W Thermal Resistance Junction to ambient