NTJD4001N, NVTJD4001N Small Signal MOSFET 30 V, 250 mA, Dual N−Channel, SC−88 Features • • • • • Low Gate Charge for Fast Switching Small Footprint − 30% Smaller than TSOP−6 ESD Protected Gate AEC Q101 Qualified − NVTJD4001N These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) TYP ID Max 1.0 W @ 4.0 V 250 mA 30 V Applications • • • • 1.5 W @ 2.5 V Low Side Load Switch Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC Buck Converters Level Shifts SOT−363 SC−88 (6 LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 250 mA Parameter Continuous Drain Current (Note 1) Steady State TA = 25 °C Power Dissipation (Note 1) Steady State TA = 25 °C PD 272 mW t =10 ms IDM 600 mA TJ, TSTG −55 to 150 °C 250 mA Pulsed Drain Current TA = 85 °C Operating Junction and Storage Temperature 180 Source Current (Body Diode) IS Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 °C 260 1 SOT−363 CASE 419B STYLE 26 THERMAL RESISTANCE RATINGS (Note 1) 1 S1 G1 D2 Symbol Value Unit Junction−to−Ambient − Steady State RqJA 458 °C/W Junction−to−Lead − Steady State RqJL 252 Parameter TE M G G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using min pad size (Cu area = 0.155 in sq [1 oz] including traces). TE = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTJD4001NT1G SOT−363 (Pb−Free) 3000 / Tape & Reel NVTJD4001NT1G SOT−363 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 May, 2015 − Rev. 7 1 Publication Order Number: NTJD4001N/D NTJD4001N, NVTJD4001N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS V mV/ °C 56 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V ±1.0 mA VGS(TH) VGS = VDS, ID = 100 mA 1.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 0.8 1.2 mV/ °C −3.2 VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.5 gFS VDS = 3.0 V, ID = 10 mA 80 Input Capacitance CISS 33 COSS VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 20 Output Capacitance 19 32 Reverse Transfer Capacitance CRSS 7.25 12 0.9 1.3 Forward Transconductance W mS CHARGES AND CAPACITANCES VGS = 5.0 V, VDS = 24 V, ID = 0.1 A Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.2 pF nC 0.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDD = 5.0 V, ID = 10 mA, RG = 50 W ns 17 23 td(OFF) 94 tf 82 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.45 VGS = 0 V, dIS/dt = 8.0 A/ms, IS = 10 mA 12.4 0.7 V ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTJD4001N, NVTJD4001N TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = 10 V to 3 V 0.16 2.5 V 0.14 ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 2.25 V 0.12 0.1 0.08 2V 0.06 0.04 1.75 V 1.5 V 0.02 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.1 TJ = 25°C 0.4 1.2 0.8 1.6 VDS = 5 V 0.08 0.06 TJ = 125°C 0.04 25°C 0.02 TJ = −55°C 0 2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 1.4 1.2 1.6 2 1.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 0.2 0.18 1.25 VGS = 10 V TJ = 125°C 1.0 0.75 TJ = 25°C 0.5 TJ = −55°C 0.25 0.005 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) 0.205 1.25 TJ = 25°C 1.0 VGS = 4.5 V 0.75 VGS = 10 V 0.5 0.25 0.005 0.205 10000 2 ID = 0.01 A VGS = 10 V VGS = 0 V 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0.055 0.105 0.155 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Drain Current and Temperature 1.8 2.2 1.4 1000 1.2 1 0.8 0.6 TJ = 150°C 100 0.4 TJ = 125°C 0.2 0 −50 10 −25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (°C) 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 30 NTJD4001N, NVTJD4001N C, CAPACITANCE (pF) 50 VDS = 0 V 40 Ciss 30 Crss VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 25°C VGS = 0 V 20 Ciss Coss 10 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 5 QG 4 3 QGS QGD 2 1 ID = 0.1 A TJ = 25°C 0 0.4 0.8 0.2 0.6 QG, TOTAL GATE CHARGE (nC) 0 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 Figure 8. Gate−to−Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation IS, SOURCE CURRENT (AMPS) 0.1 VGS = 0 V TJ = 25°C 0.08 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 9. Diode Forward Voltage vs. Current 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME t,(s) Figure 10. Thermal Response www.onsemi.com 4 1 10 100 1000 NTJD4001N, NVTJD4001N PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A3 6 5 4 HE C −E− 1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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