Diodes MMDT2222V Dual npn small signal surface mount transistor Datasheet

MMDT2222V
Lead-free Green
NEW PRODUCT
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
Epitaxial Planar Die Construction
·
·
·
·
Ultra-Small Surface Mount Package
A
Complementary PNP Type Available
(MMDT2907V)
SOT-563
B C
Dim
Min
Max
Typ
"Green" Device (Note 2)
A
0.15
0.30
0.25
Qualified to AEC-Q101 Standards for High Reliability
B
1.10
1.25
1.20
C
1.55
1.70
1.60
Lead Free By Design/RoHS Compliant (Note 1)
D
Mechanical Data
G
D
·
·
Case: SOT-563, Molded Plastic
·
·
·
Moisture sensitivity: Level 1 per J-STD-020C
·
·
·
·
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
M
K
H
Terminal Connections: See Diagram
Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Polarity: See Diagrams Below
L
C1
B2
E2
E1
B1
C2
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
K
0.56
0.60
0.60
L
0.10
0.30
0.20
M
0.10
0.18
¾
All Dimensions in mm
Marking & Type Code Information: See Last Page
Ordering Information: See Last Page
Weight: 0.003 grams (approx.)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
IC
600
mA
Tj, TSTG
-55 to +150
°C
Symbol
Value
Unit
Pd
150
mW
RqJA
833
°C/W
Collector Current - Continuous
Operating and Storage and Temperature Range
Thermal Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30563 Rev. 4 - 2
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MMDT2222V
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
75
¾
V
IC = 10mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
OFF CHARACTERISTICS (Note 4)
Collector Cutoff Current
ICBO
¾
10
nA
mA
Collector Cutoff Current
ICEX
¾
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
¾
10
nA
VEB = 3.0V, IC = 0
IBL
¾
20
nA
VCE = 60V, VEB(OFF) = 3.0V
hFE
35
50
75
100
40
50
35
¾
¾
¾
300
¾
¾
¾
¾
IC = 100mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
¾
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Output Capacitance
Cobo
¾
8
pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—
25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
¾
4.0
dB
VCE = 10V, IC = 100mA,
RS = 1.0kW, f = 1.0kHz
Delay Time
td
¾
10
ns
Rise Time
tr
¾
25
ns
Storage Time
ts
¾
225
ns
Fall Time
tf
¾
60
ns
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Notes:
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
4. Short duration test pulse used to minimize self-heating effect.
DS30563 Rev. 4 - 2
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MMDT2222V
1000
hFE, DC CURRENT GAIN
Pd, POWER DISSIPATION (mW)
150
100
TA = 125°C
100
TA = -25°C
TA = +25°C
10
50
VCE = 1.0V
0
1
-50
0
50
100
150
0.1
TA, AMBIENT TEMPERATURE (° C)
Fig. 1, Derating Curve - Total
VCE, COLLECTOR-EMITTER VOLTAGE (V)
CT, CAPACITANCE (pF)
10
1000
100
2.0
30
25
20
15
Cibo
10
Cobo
5
0
1
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
35
0
2
4
6
8
10
12
14
16
18
IC = 30mA
IC = 1mA
IC = 10mA
1.8
1.6
IC = 100mA
1.4
IC = 300mA
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
20
VR, REVERSE VOLTS (V)
Fig. 3 Typical Capacitance Characteristics
0.1
0.01
10
1
100
IB, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
IC
IB = 10
0.4
TA = 25°C
0.3
TA = 150°C
0.2
0.1
TA = -50°C
VBE(ON), BASE EMITTER VOLTAGE (V)
1.0
0.5
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
NEW PRODUCT
200
0
10
1
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
DS30563 Rev. 4 - 2
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
TA = 150°C
0.4
0.3
0.2
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
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MMDT2222V
fT, GAIN BANDWIDTH PRODUCT (MHz)
NEW PRODUCT
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
Ordering Information (Note 5)
Notes:
Device
Packaging
Shipping
MMDT2222V-7
SOT-563
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KAT = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: R = 2004
M = Month ex: 9 = September
KAT YM
Date Code Key
Year
2004
2005
2006
2007
2008
2009
Code
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30563 Rev. 4 - 2
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MMDT2222V
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