Fairchild FDS8928A Dual n & p-channel enhancement mode field effect transistor Datasheet

July 1998
FDS8928A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 5.5 A,30 V, RDS(ON)=0.030 Ω @ VGS=4.5 V
RDS(ON)=0.038 Ω @ VGS=2.5 V.
P-Channel -4 A,-20 V, RDS(ON)=0.055 Ω @ VGS=-4.5 V
RDS(ON)=0.072 Ω @ VGS=-2.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SuperSOTTM-8
SuperSOTTM-6
SOT-23
D2
D1
D2
D1
S
FD 8A
2
89
S2
SO-8
pin 1
S1
Absolute Maximum Ratings
SO-8
SOT-223
SOIC-16
5
4
6
3
7
2
8
1
G2
G1
T A = 25°C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
30
-20
V
VGSS
Gate-Source Voltage
8
-8
V
ID
Drain Current - Continuous
5.5
-4
A
20
-20
(Note 1a)
- Pulsed
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ,TSTG
2
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS8928A Rev. B
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
VGS = 0 V, ID = 250 µA
N-Ch
30
VGS = 0 V, ID = -250 µA
P-Ch
-20
ID = 250 µA, Referenced to 25 oC
N-Ch
32
ID = -250 µA, Referenced to 25 oC
P-Ch
-23
VDS = 24 V, VGS = 0 V
N-Ch
VDS = -16 V, VGS = 0 V
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate - Body Leakage, Forward
VGS = 8 V, VDS = 0 V
IGSSR
Gate - Body Leakage, Reverse
VGS = -8 V, VDS = 0 V
V
V
mV/oC
1
µA
P-Ch
-1
µA
All
100
nA
All
-100
nA
ON CHARACTERISTICS (Note 2)
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
VDS = VGS, ID = 250 µA
N-Ch
0.4
0.67
1
V
VDS = VGS, ID = -250 µA
P-Ch
-0.4
-0.6
-1
V
o
-3
ID = -250 µA, Referenced to 25 C
P-Ch
4
VGS = 4.5 V, ID = 5.5 A
N-Ch
0.025
0.03
0.031
0.038
0.043
0.055
0.059
0.072
o
RDS(ON)
Static Drain-Source On-Resistance
VGS = 2.5 V, ID = 4.5 A
VGS = -4.5 V, ID = -4 A
P-Ch
VGS = -2.5 V, ID = -3.4 A
ID(on)
gFS
On-State Drain Current
Forward Transconductance
mV/oC
N-Ch
ID = 250 µA, Referenced to 25 C
Ω
VGS = 4.5 V, VDS= 5 V
N-Ch
20
VGS = -4.5 V, VDS= -5 V
P-Ch
-20
A
VDS = 5 V, I D = 5.5 A
N-Ch
20
S
VDS = -5 V, I D = -4 A
P-Ch
13
S
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
900
pF
P-Ch
1130
N-Ch
410
P-Ch
480
N-Ch
110
P-Ch
120
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
pF
pF
FDS8928A Rev. B
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Type
tD(on)
Turn - On Delay Time
VDS = 6 V, I D = 1 A
VGS = 4.5 V , RGEN = 6 Ω
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Typ
Max
Units
N-Ch
6
12
ns
P-Ch
8
16
N-Ch
19
31
37
ns
P-Ch
23
VDS= -10 V, I D = -1 A
N-Ch
42
67
VGS = -4.5 V , RGEN = 6 Ω
P-Ch
260
360
N-Ch
13
24
ns
ns
P-Ch
90
125
VDS = 10 V, I D = 5.5 A,
N-Ch
19.8
28
VGS = 4.5 V
P-Ch
20
28
Gate-Source Charge
Gate-Drain Charge
Min
N-Ch
2
VDS = -5 V, I D = -4 A,
P-Ch
2.8
VGS = -5 V
N-Ch
6.3
P-Ch
3.2
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
(Note 2)
(Note 2)
N-Ch
1.3
A
P-Ch
-1.3
A
1.2
V
-1.2
V
N-Ch
P-Ch
0.68
-0.7
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2
pad of 2oz copper.
b. 125OC/W on a 0.02 in2
pad of 2oz copper.
c. 135OC/W on a 0.003 in2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel
2
VGS = 4.5V
2.5V
R DS(ON) , NORMALIZED
3.0V
24
2.0V
18
12
6
1.5V
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
30
1.6
VGS = 2.0V
2.5 V
1.2
3.0V
3.5 V
4.5V
0.8
0
0
1
2
3
4
0
5
6
12
30
0.1
I D = 5.5 A
1.6
I D = 3A
VGS = 4.5 V
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.075
0.05
TA = 125°C
0.025
25°C
0
1
150
2
V
TJ , JUNCTION TEMPERATURE (°C)
GS
3
4
5
, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
I S , REVERSE DRAIN CURRENT (A)
20
20
TA = -55°C
V DS =5V
I D , DRAIN CURRENT (A)
24
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
25°C
16
125°C
12
8
4
0
18
I D , DRAIN CURRENT (A)
VDS , DRAIN-SOURCE VOLTAGE (V)
V GS = 0V
1
TA = 125°C
-55°C
0.01
0.001
0.0001
0
0.5
1
V
GS
1.5
2
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
3
25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel (continued)
3000
ID = 5.5A
VDS = 5V
10V
15V
4
CAPACITANCE (pF)
VGS , GATE-SOURCE VOLTAGE (V)
5
3
2
1000
C oss
200
80
1
30
0.1
0
0
5
10
15
20
25
RD
S(O
N
IT
100
1m
10m
100
1
1s
10s
DC
0.3
VGS = 4.5V
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
0.2
us
2
5
10
30
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
25
s
3
0.01
0.1
1
30
IM
)L
0.5
s
POWER (W)
I D , DRAIN CURRENT (A)
50
0.03
0.4
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
0.1
C rss
f = 1 MHz
V GS = 0V
VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
10
C iss
500
ms
20
15
10
5
0
0.01
1
2
5
10
20 30
50
0.1
0.5
10
50 100
300
SINGLE PULSE TIME (SEC)
VDS , DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
FDS8928A Rev. B
2
VGS = -4.5V
-3.5V
-3.0V
24
R DS(ON), NORMALIZED
30
- 2.5V
18
-2.0V
12
-1.5V
6
0
DRAIN-SOURCE ON-RESISTANCE
-ID , DRAIN-SOURCE CURRENT (A)
Typical Electrical Characteristics: P-Channel
1.6
VGS = - 2.0V
-2.5 V
-3.5V
-4.5V
0.8
0
1
2
3
4
-3.0 V
1.2
5
0
6
I D = -4.0A
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
24
30
0.2
1.6
V GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
I D = -2A
0.15
0.1
TA = 125°C
0.05
25°C
0
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0
150
- IS , REVERSE DRAIN CURRENT (A)
TJ = -55°C
25°C
8
125°C
6
4
2
1.2
1.6
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
3
4
5
10
VGS = 0V
3
1
2
TJ =125°C 25°C
-55°C
0.1
0.01
0.001
0.8
2
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
1
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation
with Temperature.
- ID , DRAIN CURRENT (A)
18
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 11. On-Region Characteristics.
0
0.4
12
-I D , DRAIN CURRENT (A)
- VDS , DRAIN-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS8928A Rev. B
Typical Electrical Characteristics: P-Channel (continued)
3000
ID =-4.0A
2000
VDS = -5V
4
CAPACITANCE (pF)
-V GS , GATE-SOURCE VOLTAGE (V)
5
-10V
-15V
3
2
Ciss
1000
Coss
500
200
Crss
100
1
50
0.1
0
0
4
8
12
16
20
f = 1 MHz
V GS = 0 V
0.2
0.5
1
2
5
10
20
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
30
50
10
5
)
ON
S(
RD
100
IT
LIM
1m
1
1s
10s
DC
0.3
0.1
0.03
0.01
0.1
V GS = -4.5V
SINGLE PULSE
RθJA = 135°C/W
TAA = 25°C
0.2
0.5
10m
s
10
0m
s
us
SINGLE PULSE
R θJA =135 °C/W
TA = 25°C
25
s
POWER (W)
- ID , DRAIN CURRENT (A)
20
20
15
10
5
0
0.01
1
2
5
10
20 30
50
0.1
0.5
10
50 100
300
SINGLE PULSE TIME (SEC)
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power
Dissipation.
FDS8928A Rev. B
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Typical Thermal Characteristics: N & P-Channel (continued)
1
0.5
0.2
0.1
0.05
0.02
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA =135°C/W
0.2
0.1
0.05
P(pk)
0.02
0.01
0.01
t1
Single Pulse
0.002
0.001
0.0001
t2
TJ - TA = P * R JA (t)
θ
Duty Cycle, D = t1 /t2
0.005
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1.
Transient thermalresponse will change depending on the circuit board design.
FDS8928A Rev. B
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
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figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
Pin 1
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
2,500
L86Z
F011
D84Z
Rail/Tube
TNR
TNR
95
4,000
500
13" Dia
-
13" Dia
7" Dia
343x64x343
530x130x83
343x64x343
184x187x47
Max qty per Box
5,000
30,000
8,000
1,000
Weight per unit (gm)
0.0774
0.0774
0.0774
0.0774
Weight per Reel (kg)
0.6060
-
0.9696
0.1182
Reel Size
Box Dimension (mm)
SOIC-8 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
F63TNLabel
F63TN Label
LOT: CBVK741B019
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
ESD Label
(F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
W
12.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
10.25
min
5.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.1
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.450
+/0.150
9.2
+/-0.3
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(8lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
7" Dia
7.00
177.8
12mm
13" Dia
13.00
330
 1998 Fairchild Semiconductor Corporation
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. B
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
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