ON EN7177B N-channel jfet and npn bipolar transistor 15v, 10 to 32ma, 50v, 150ma, composite type, cph5 Datasheet

Ordering number : EN7177B
CPH5905
N-Channel JFET and NPN Bipolar Transistor
15V, 10 to 32mA, 50V, 150mA, Composite type, CPH5
http://onsemi.com
Features
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly
The CPH5905 contains a 2SK3357-equivalent chip and a 2SC4639-equivalent chip in one package
Drain and emitter are shared
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
VDSX
VGDS
Gate-to-Drain Voltage
Gate Current
Drain Current
IG
ID
Allowable Power Dissipation
PD
15
Mounted on a ceramic board (600mm2×0.8mm)
V
--15
V
10
mA
50
mA
350
mW
[TR]
Collector-to-Base Voltage
VCBO
VCEO
VEBO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
V
150
IB
PC
Collector Dissipation
V
V
6
IC
ICP
Base Current
55
50
mA
300
mA
30
mA
Mounted on a ceramic board (600mm2×0.8mm)
350
mW
Mounted on a ceramic board (600mm2×0.8mm)
500
mW
[TR]
Total Power Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7017A-007
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
3
Packing Type : TL
Marking
1E
1.6
2.8
0.05
0.9
0.2
0.6
TL
1
0.95
2
0.4
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
LOT No.
4
RANK
5
CPH5905G-TL-E
CPH5905H-TL-E
0.15
2.9
0.2
0.6
Package Dimensions
Electrical Connection
5
4
3
CPH5
1
Semiconductor Components Industries, LLC, 2013
August, 2013
2
60612 TKIM/62005AC MSIM TB-00001552/22802 TSIM TA-49 No.7177-1/8
CPH5905
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
[FET]
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IGSS
VGS(off)
Gate Cutoff Current
Cutoff Voltage
Drain Current
IG=--10μA, VGS=0V
VGS=--10V, VDS=0V
--15
V
--1.0
VDS=5V, ID=100μA
VDS=5V, VGS=0V
VDS=5V, VGS=0V, f=1kHz
--0.4
--0.7
10.0*
nA
--1.5
V
32.0*
mA
Forward Transfer Admittance
IDSS
| yfs |
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1kHzz
Noise Figure
NF
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
ICBO
IEBO
VCB=35V, IE=0A
0.1
μA
VEB=4V, IC=0A
0.1
μA
VCE=6V, IC=1mA
Gain-Bandwidth Product
hFE
fT
VCE=6V, IC=10mA
200
Output Capacitance
Cob
1.7
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=6V, f=1MHz
IC=50mA, IB=5mA
24
35
mS
10.0
pF
2.9
pF
1.0
dB
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
135
IC=50mA, IB=5mA
400
MHz
pF
0.08
0.4
mV
0.8
1.0
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
55
V
IC=1mA, RBE=∞
50
V
V(BR)EBO
ton
IE=10μA, IC=0A
6
tstg
tf
See specified Test Circuit.
V
0.15
ns
0.75
ns
0.20
ns
* : The CPH5905 is classified by IDSS as follows : (unit : mA)
Rank
IDSS
G
10.0 to 20.0
H
16.0 to 32.0
The specifications shown above are for each individual FET or transistor.
Switching Time Test Circuit
IB1
PC=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
1kΩ
RL
2kΩ
VR
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=20V
10IB1= --10IB2=IC=10mA
Ordering Information
Package
Shipping
CPH5905G-TL-E
Device
CPH5
3,000pcs./reel
CPH5905H-TL-E
CPH5
3,000pcs./reel
memo
Pb Free
No.7177-2/8
CPH5905
ID -- VDS
20
[FET]
ID -- VDS
20
[FET]
VGS=0V
16
V
V GS=0
12
Drain Current, ID -- mA
Drain Current, ID -- mA
16
--0.1V
--0.2V
8
--0.3V
4
--0.2V
8
--0.3V
--0.4V
4
--0.4V
--0.5V
--0.6V
--0.7V
--0.1V
12
--0.5V
--0.6V
--0.7V
0
0
0.4
0
0.8
1.2
1.6
2.0
Drain-to-Source Voltage, VDS -- V
2.4
ID -- VGS
22
0
4
6
8
10
Drain-to-Source Voltage, VDS -- V
12
ITR02750
ID -- VGS
[FET]
16
VDS=5V
20
2
ITR02749
[FET]
VDS=5V
IDSS=15mA
14
6
4
25
6
8
75°
C
8
10
--2
5°C
10
20
m
15 A
mA
10
mA
S =3
0m
12
Ta
=
A
14
12
°C
Drain Current, ID -- mA
16
ID
S
Drain Current, ID -- mA
18
4
2
2
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- mS
A
30m
mA
=15
I DSS
3
2
10
7
5
3
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
[FET]
VDS=5V
f=1kHz
5
--1.0
IT04224
| yfs | -- ID
7
0
--1.2
0.2
| yfs | -- IDSS
100
Forward Transfer Admittance, | yfs | -- mS
0
--1.4
0.2
ITR02752
[FET]
VDS=5V
VGS=0V
f=1kHz
7
5
3
2
10
2
3
5
7
3
1.0
2
3
5
7
2
10
3
5
Drain Current, ID -- mA
IT04225
VGS(off) -- IDSS
[FET]
7
3
5
Drain Current, IDSS -- mA
2
IT04226
Ciss -- VDS
[FET]
10
3
VDS=5V
ID=100μA
VGS=0V
f=1MHz
2
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
0
1.0
7
5
3
2
10
7
5
3
7
10
2
3
5
Drain Current, IDSS -- mA
IT04227
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
IT04228
No.7177-3/8
CPH5905
Crss -- VDS
[FET]
VDS=0V
f=1MHz
7
3
2
1.0
6
4
2
7
2
1.0
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
5 7 0.1
2 3
Frequency, f -- kHz
5 7100
ITR02758
PD -- Ta
[FET]
[FET]
VDS=5V
ID=1mA
f=1kHz
8
6
4
2
400
5 7 1.0
2 3
5 7 10
5 7 1.0
2 3
Signal Source Resistance, Rg -- kΩ
5 71000
ITR02759
IC -- VCE
[TR]
50
5 7 10
A
50μ
0μ
A
4
2 3
5 7 100
A
400μ
350
M
ou
300
nt
ed
on
250
ac
er
am
ic
200
bo
ar
150
d
(6
00
m
m2
✕
100
0.
8m
m
)
50
2 3
0
35
200μA
150μA
20
100μA
15
50μA
10
60
80
100
120
50μA
45μA
40μA
35μA
8
30μA
6
25μA
20μA
4
15μA
10μA
2
IB=0μA
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
5μA
IB=0μA
Collector-to-Emitter Voltage, VCE -- V
1.0
0
5
10
15
20
25
30
35
40
45
Collector-to-Emitter Voltage, VCE -- V
ITR10376
IC -- VBE
160
0
0.9
[TR]
hFE -- IC
2
VCE=6V
160
IT09866
[TR]
5
0
140
IC -- VCE
10
30
25
40
12
300μA
250μA
40
20
Ambient Temperature, Ta -- °C
350μA
50
45
0
2 3
0
2 3
Collector Current, IC -- mA
0
0.1
2 3
IT04229
NF -- Rg
10
0
0.01
3
Allowable Power Dissipation, PD -- mW
7
Noise Figure, NF -- dB
[FET]
VDS=5V
ID=1mA
Rg=1kΩ
8
5
5
Collector Current, IC -- mA
NF -- f
10
Noise Figure, NF -- dB
Reverse Transfer Capacitance, Crss -- pF
10
50
ITR10377
[TR]
VCE=6V
140
DC Current Gain, hFE
100
80
60
Ta=75
°C
25°C
--25°C
Collector Current, IC -- mA
1000
120
40
20
0.2
0.4
0.6
0.8
5
3
Ta=75°C
2
25°C
--25°C
100
7
5
0
0
7
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
1.4
ITR10378
3
0.1
2
3
5
1.0
2
3
5
10
2
3
Collector Current, IC -- mA
5
100 2 3
ITR10379
No.7177-4/8
CPH5905
f T -- IC
[TR]
VCE=6V
3
3
2
100
7
5
2
10
7
5
3
2
3
1.0
2
3
5
7
2
10
3
5
7
Collector Current, IC -- mA
5
2
100
ITR10380
Cob -- VCB
5
[TR]
10
7
5
3
2
2
1.0
1.0
2
1.0
3
5
7
2
10
3
5
Collector-to-Base Voltage, VCB -- V
VBE(sat) -- IC
10
7
100
ITR10382
1.0
7
5
3
2
0.1
5°C
Ta=7
°C
--25
7
5
2
3
5
7
2
10
25
3
°C
5
7
Collector Current, IC -- mA
2
100
ITR10383
PC -- Ta
[TR]
400
IC / IB=10
7
[TR]
Collector Dissipation, PC -- mW
350
5
3
2
1.0
Ta= --25°C
7
25°C
75°C
5
3
1.0
7
10
ITR10381
[TR]
2
2
1.0
5
7
5
IC / IB=10
3
7
5
3
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
7
Emitter-to-Base Voltage, VEB -- V
f=1MHz
3
Output Capacitance, Cob -- pF
[TR]
f=1MHz
5
2
1.0
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Cib -- VEB
5
Input Capacitance, Cib -- pF
Gain-Bandwidth Product, fT -- MHz
7
M
ou
300
nt
250
ed
on
ac
er
am
ic
200
bo
ar
150
d
(6
00
m
100
m2
✕
0.
8m
m
)
50
0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7
2
100
ITR10384
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT09867
No.7177-5/8
CPH5905
Embossed Taping Specification
CPH5905G-TL-E, CPH5905H-TL-E
No.7177-6/8
CPH5905
Outline Drawing
CPH5905G-TL-E, CPH5905H-TL-E
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.7177-7/8
CPH5905
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PS No.7177-8/8
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